Films minces à base de Si nanostructuré pour des cellules ...

3.21 Inuence of sublayer thicknesses on Si-np formation. Upper part of
the gure shows the plan view of Si-np in SiO x sublayers in as-grown
and CA cases with regard to sublayer thickness. The bottom part of
the gure shows a 3D illustration and a 3D volumic reconstruction of
two specic cases of ML. (The plan view and volumic reconstructed
images are given by M. Roussel from GPM). . . . . . . . . . . . . . . 87
3.22 PL spectra to see the inuence of SiO 2 barrier thickness by investigating
(a) as recorded spectra and, (b) spectra normalized to pattern
number. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
3.23 PL spectra of 50 patterned ML with t SRSO = 3nm and t SiO2 varying
between 1.5 nm to 10 nm to investigate the inuence of SiO 2 barrier
thickness. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
tel-00916300, version 1 - 10 Dec 2013
4.1 Eect of r N on refractive index (left axis) and deposition rate (right
axis). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
4.2 Typical FTIR spectra of our SRSN samples recorded in Brewster and
normal incidence obtained from a SRSN sample with t=490 nm and
n 1.95eV =2.44. The TO mode of Si-N is normalized to unity in the
spectra. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
4.3 Evolution of FTIR spectra with refractive index as observed in Brewster
and normal incidences; (Inset) TO Si−N peak positions versus
refractive index. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
4.4 FTIR spectra of reactively sputtered SRSN as a function of annealing,
recorded in Brewster incidence and (Inset) normal incidence. . . . . . 95
4.5 XRD spectra of as-grown and annealed SRSN samples grown by reactive
sputtering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
4.6 Raman spectra of STA and CA SRSN sample (n 1.95ev =2.44) grown on
fused silica substrate. (Inset) PL spectra obtained in Raman set-up
with λ exc =2.33eV (532 nm) and power density 1.4 MW/cm 2 . . . . . . 97
4.7 The absorption coecient and photoluminescence spectra obtained
from SRSN samples, with regard to refractive index and annealing. . 98
4.8 Optical investigations on SiN x monolayers with n 1.95eV between 2.01
and 2.13. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
4.9 Eect of P Si on refractive indices and deposition rates of co-sputtered
SiN x materials. (r N =5.1% and 7.1% were used for Si 3 N 4 and NRSN
layers respectively). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
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