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The PL spectra is composed of two peaks.<br />

ˆ The absence of emission in ML with 8 nm thick SRSO sublayer is related to<br />

the loss of quantum connement eect.<br />

ˆ All the emission properties investigated above are expected to be inuenced<br />

by optical/geometrical phenomena which will be analyzed in chapter 5.<br />

3.10 Conclusions<br />

tel-00916300, version 1 - 10 Dec 2013<br />

A vast analysis of SRSO monolayer and SRSO/<strong>Si</strong>O 2 multilayer congurations have<br />

been discussed in this chapter. High refractive in<strong>de</strong>x in SRSO layer were obtained<br />

by <strong>de</strong>veloping a new <strong>de</strong>position approach: Reactive co-sputtering. A <strong>de</strong>ep insight<br />

on the <strong>de</strong>position process, and the structural changes associated with each growth<br />

method is analyzed in the rst part of this chapter. One of the major goals of this<br />

thesis is achieved by attaining a higher <strong>de</strong>nsity of <strong>Si</strong>-np (2.6 ± 0.5 x 10 19 np/cm 3 )<br />

in SRSO/<strong>Si</strong>O 2 MLs than the earlier reported value of 9 x 10 18 np/cm 3 using the<br />

reactive co-sputtering approach. It is <strong>de</strong>monstrated that the <strong>Si</strong>O 2 barrier thickness<br />

plays an important role in the formation of size controlled <strong>Si</strong>-np. For t <strong>Si</strong>O2 lower<br />

than or equal to 3 nm, there is no eective prevention of <strong>Si</strong> diusion. Consi<strong>de</strong>ring<br />

a balance between diusion barrier and carrier transport, it is estimated that the<br />

optimal barrier thickness is around 3-3.5 nm.<br />

90

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