Films minces à base de Si nanostructuré pour des cellules ...

tel-00916300, version 1 - 10 Dec 2013
3.1 Eect of deposition temperature on (a) Deposition rate (r d ) nm/s and
(b) Refractive index (n 1.95eV ). . . . . . . . . . . . . . . . . . . . . . . 61
3.2 FTIR spectra - Eect of deposition temperature (T d ) on the SRSO
lm structure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
3.3 Proposed mechanism of temperature dependent reactive sputtering. . 65
3.4 Illustration of SRSO layer at low and high T d . . . . . . . . . . . . . . 66
3.5 Eect of r H % on the deposition rate (r d ) nm/s (left axis)and refractive
index, n 1.95eV (right axis). . . . . . . . . . . . . . . . . . . . . . . . . . 67
3.6 FTIR spectra - Eect of hydrogen rate on the SRSO lm structure. . 68
3.7 Eect of P Si on (a) Deposition rate (r d nm/s); (inset) the thicknesses,
and (b) Refractive index (n 1.95eV ). . . . . . . . . . . . . . . . . . . . . 70
3.8 FTIR spectra of co-sputtered SRSO in (a) Brewster incidence and (b)
normal incidence. The straight line in the normal incidence spectra
helps to witness the shift of v T O3 and the arrows indicate the 1107
cm −1 peak. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
3.9 Eect of P Si on deposition rate (left axis), refractive index (right
axis), and thickness (Inset). . . . . . . . . . . . . . . . . . . . . . . . 73
3.10 FTIR Spectra- Eect of P Si on the SRSO lm structure. . . . . . . . 74
3.11 Eect of annealing on the FTIR spectra in Brewster incidence. . . . 76
3.12 Raman spectra of SRSO-P15 grown on fused Si substrate. λ excitation =
532 nm and laser power density =0.14 MW/cm 2 . . . . . . . . . . . . 77
3.13 XRD spectra of SRSO-P15 grown on Si substrate. . . . . . . . . . . . 77
3.14 PL spectra of (a) SRSO-P15 sample at various annealing and (b)
Other SRSO samples grown by method 3 but with lower refractive
index.(*) indicates second order laser emission. . . . . . . . . . . . . . 78
3.15 Absorption coecient curves of SRSO monolayer with regard to annealing.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
3.16 Summary of r d (nm/s) and n 1.95eV obtained with the three SRSO sputtering
growth methods. . . . . . . . . . . . . . . . . . . . . . . . . . . 80
3.17 Structural changes in 50(3/3) ML with annealing as investigated by
(a) Brewster incidence FTIR spectra and (b) XRD spectra. . . . . . . 82
3.18 Formation of Si-np in SRSO sublayer of CA 50(3/3) ML and their
size distribution. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
3.19 PL spectrum of CA 50(3/3) ML. . . . . . . . . . . . . . . . . . . . . 84
3.20 (a) Typical FTIR spectra from 70(4/3) ML showing the eect of annealing
and (b) LO 3 and TO 3 peak position variations with annealing. 86
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