Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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Summary<br />
The main focus and concerns <strong>of</strong> this PhD thesis is the <strong>growth</strong> <strong>of</strong> <strong>III</strong>-<br />
V <strong>semiconductor</strong> nanostructures (Quantum dots (QDs) and quantum<br />
dashes) on silicon substrates using molecular <strong>beam</strong> epitaxy (MBE)<br />
technique. The investigation <strong>of</strong> inuence <strong>of</strong> the major <strong>growth</strong> parameters<br />
on their basic properties (density, geometry, composition, size<br />
etc.) and the systematic characterization <strong>of</strong> their structural and optical<br />
properties are the core <strong>of</strong> the research work. The monolithic integration<br />
<strong>of</strong> <strong>III</strong>-V optoelectronic devices with silicon electronic circuits<br />
could bring enormous prospect for the existing <strong>semiconductor</strong> technology.<br />
Our challenging approach is to combine the superior passive<br />
optical properties <strong>of</strong> silicon with the superior optical emission properties<br />
<strong>of</strong> <strong>III</strong>-V material by reducing the amount <strong>of</strong> <strong>III</strong>-V materials to<br />
the very limit <strong>of</strong> the active region.<br />
Dierent hetero<strong>epitaxial</strong> integration approaches have been investigated<br />
to overcome the materials issues between <strong>III</strong>-V and Si. However,<br />
this include the self-assembled <strong>growth</strong> <strong>of</strong> InAs and InGaAs QDs<br />
in silicon and GaAx matrices directly on at silicon substrate, sitecontrolled<br />
<strong>growth</strong> <strong>of</strong> (GaAs/In 0.15 Ga 0.85 As/GaAs) QDs on pre-patterned<br />
Si substrate and the direct <strong>growth</strong> <strong>of</strong> GaP on Si using migration enhanced<br />
epitaxy (MEE) and MBE <strong>growth</strong> modes. An ecient ex-situ<br />
buered HF (BHF) and in-situ surface cleaning sequence based on<br />
atomic hydrogen (AH) cleaning at 500 ◦ C combined with thermal oxide<br />
desorption within a temperature range <strong>of</strong> 700-900 ◦ C has been<br />
established. The removal <strong>of</strong> oxide desorption was conrmed by semicircular<br />
streaky reection high energy electron diraction (RHEED)