Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
Molecular beam epitaxial growth of III-V semiconductor ... - KOBRA
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2.2 Nanotechnology Approach to QDs Fabrication Methods<br />
electronic circuits could bring huge prospect for the existing advanced <strong>semiconductor</strong><br />
technology [3, 16, 17].<br />
2.2 Nanotechnology Approach to QDs Fabrication<br />
Methods<br />
The increasing demands on modern technology and energy conservation in the<br />
last decade as well as the future plans <strong>of</strong> <strong>semiconductor</strong> industry made the <strong>semiconductor</strong><br />
companies to think more about reducing the costs and the dimensions<br />
<strong>of</strong> their devices and products. However, at the same time keeping or increasing<br />
the eciency <strong>of</strong> their products is another critical concern, by taking into account<br />
the new material selection and design which have the lower energy consumption<br />
due to the fact that the energy resources are limited. Nanotechnology is one <strong>of</strong><br />
the keys to the development <strong>of</strong> novel materials, devices and systems.<br />
Precise<br />
control <strong>of</strong> nanomaterials, nanostructures, nanodevices and their performances is<br />
essential for future innovations in technology and energy consumption.<br />
Nanotechnology is an advanced technology that has received a lot <strong>of</strong> attention<br />
for its ability to make use <strong>of</strong> the unique properties <strong>of</strong> nanosized materials.<br />
Nanotechnology is capable <strong>of</strong> manipulating and controlling material structures at<br />
the nano level and oering unprecedented functions and excellent electrical, optical<br />
and magnetic material properties. Nanotechnology consists <strong>of</strong> the "top-down<br />
approach" and the "bottom-up approach".<br />
The top-down approach is based<br />
on fabrication <strong>of</strong> nanostructures by nano-lithography (e.g., electron, ion <strong>beam</strong><br />
or nanoimprint patterning) and etching techniques (e.g., wet- or dry-chemical<br />
etching), such as in <strong>semiconductor</strong> manufacturing can lead to the processing <strong>of</strong><br />
nanosized ne structures. In the bottom-up approach, self-organization properties<br />
inherent in materials can be utilized to assemble ne nanostructures from the<br />
atomic or molecular levels (e.g., self-assembled quantum dots <strong>growth</strong> by MBE,<br />
formation <strong>of</strong> nano-crystallites with special plasma deposition processes). Moreover,<br />
there is another mixed approach <strong>of</strong> nan<strong>of</strong>abrication which consist <strong>of</strong> the<br />
combination <strong>of</strong> the last two approaches top-down and bottom-up (e.g., quantum<br />
dot <strong>growth</strong> on pre-patterned substrates). Controlling materials at the nano<br />
11