VTTF VLSI Test Technology Future - Laboratory for Reliable ...
VTTF VLSI Test Technology Future - Laboratory for Reliable ... VTTF VLSI Test Technology Future - Laboratory for Reliable ...
Electronic Design Automation and Test 2002 VTTF VLSI Test Technology Future Chauchin Su Department of Electrical and Control Engineering National Chiao Tung University Hsinchu, Taiwan 300 http://ccsu.cn.nctu.edu.tw/ NTHU DTC 2002 P.1
- Page 2 and 3: ITRS 2001 Summary T Nodes 2001 2003
- Page 4 and 5: System Drivers Microprocessor (MPU)
- Page 6 and 7: SoC - System on Chip ASIC IP System
- Page 8 and 9: SoC - The Emerging Issues • Int
- Page 10 and 11: SoC - Computers Monitor KeyBoard Mo
- Page 12 and 13: SoC - Communications ADC Encode Dig
- Page 14 and 15: SoC - Multiple Technologies Logic S
- Page 16 and 17: Grand Challenges 90nm 65nm 45nm Max
- Page 18 and 19: Test Difficult Challenges - Revisit
- Page 20 and 21: Test Difficult Challenges •Reliab
- Page 22 and 23: Test Challenges - Yield Losses 90nm
- Page 24 and 25: Test Trend - ATE Equipment Cost Tes
- Page 26 and 27: Test Trend - IDDq Testing Year 2001
- Page 28 and 29: Test Trend - Mixed Signal Test ADC
- Page 30 and 31: The Answer is YES NO MAY BE SO
- Page 32 and 33: No, From Practical Point of View
- Page 34 and 35: May Be. It will never happen. • A
- Page 36 and 37: Test Trend - Potential Solutions DF
- Page 38: So, Come and Join VTTF Taiwan. VTTF
Electronic Design Automation and <strong>Test</strong> 2002<br />
<strong>VTTF</strong><br />
<strong>VLSI</strong> <strong>Test</strong> <strong>Technology</strong> <strong>Future</strong><br />
Chauchin Su<br />
Department of Electrical and Control Engineering<br />
National Chiao Tung University<br />
Hsinchu, Taiwan 300<br />
http://ccsu.cn.nctu.edu.tw/<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.1
ITRS 2001 Summary<br />
T Nodes<br />
2001<br />
2003<br />
2005<br />
2007<br />
2010<br />
2013<br />
2016<br />
Gate L (nm)*<br />
90<br />
65<br />
45<br />
32<br />
22<br />
16<br />
11<br />
DRAM HPitch<br />
130<br />
100<br />
80<br />
65<br />
45<br />
32<br />
22<br />
Memory (Gbits)<br />
0.54<br />
10.7<br />
2.15<br />
4.29<br />
8.59<br />
32<br />
64<br />
Logic Size (MTx)<br />
69<br />
110<br />
174<br />
276<br />
552<br />
1104<br />
2209<br />
On-Chip Clk(GHz)<br />
1.7<br />
3.1<br />
5.2<br />
6.7<br />
12<br />
19<br />
28<br />
Off-Chip Clk(GHz)<br />
1.7<br />
3.1<br />
5.2<br />
6.7<br />
12<br />
19<br />
28<br />
Signal IO Pins<br />
1500<br />
1700<br />
2000<br />
2200<br />
2400<br />
2700<br />
3000<br />
Min Vdd (V)<br />
1.1<br />
1..0<br />
0.9<br />
0.7<br />
0.6<br />
0.5<br />
0.4<br />
* Off-Chip Clk is <strong>for</strong> high speed peripheral buses<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.2
Market Drivers<br />
Portable and Wireless<br />
Function: 2x / 2 years<br />
Broad Band<br />
Bandwidth: 2x / 9 months<br />
Function: 20% increase / year<br />
Internet Switching<br />
Bandwidth: 4x / 3-4 years<br />
Consumer<br />
Time-to-Market: < 12 months<br />
Function: novelty<br />
Computer<br />
Speed: 2x / 2 years<br />
Form Factor: Shrinking size<br />
Automotive<br />
Ruggedness<br />
Reliability and Safety<br />
Mass Storage<br />
Density: 60% increase / year<br />
Speed: 2x by 2005<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.3
System Drivers<br />
Microprocessor (MPU)<br />
Microprocessors<br />
Memories<br />
Reprogrammable (FPGA)<br />
Analog / Mixed-Signal (AMS)<br />
RF Circuits<br />
Analog Circuits<br />
Analog / Digital Converters<br />
System on Chip (SoC)<br />
A yet-Evolving Product<br />
Integrates MPU and AMS IPs<br />
Hardware / Software Codesign<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.4
System on Chip Overview<br />
High<br />
Transistor<br />
Count<br />
High<br />
Pin<br />
Count<br />
SoC<br />
High<br />
Speed<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.5
SoC - System on Chip<br />
ASIC<br />
IP<br />
System on Board<br />
System on Chip<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.6
SoC - The Benifits<br />
• Reduction in<br />
• Size<br />
• Weight<br />
• Cost<br />
• Time<br />
• Power<br />
• Increase in<br />
• Profit<br />
• Powerfulness<br />
• Portability<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.7
SoC - The Emerging Issues<br />
<br />
<br />
• Integration<br />
− Soft Core<br />
− Firm Core<br />
− Hard Core<br />
• Description<br />
− Documentation<br />
− Simulation<br />
− Verification<br />
− Security<br />
• <strong>Test</strong>ing<br />
− High Speed<br />
− Mixed Signal<br />
− RF <strong>Test</strong>ing<br />
− Varieties<br />
<br />
<br />
NTHU DTC 2002 P.8
SoC - Applications<br />
Computer<br />
SoC<br />
Communication<br />
Consumer<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.9
SoC - Computers<br />
Monitor<br />
KeyBoard<br />
Mouse<br />
P Ports<br />
S Ports<br />
USB<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
BIOS<br />
PU<br />
CPU<br />
MMU<br />
Cache<br />
RAM<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Audio<br />
FireWire<br />
Ethernet<br />
USB<br />
Floppy<br />
HardDisk<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.10
SoC - Computers<br />
Monitor<br />
KeyBoard<br />
Mouse<br />
P Ports<br />
S Ports<br />
USB<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
BIOS<br />
PU<br />
SoC<br />
CPU MMU<br />
Cache<br />
RAM<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Processor<br />
Audio<br />
FireWire<br />
Ethernet<br />
USB<br />
Floppy<br />
HardDisk<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.11
SoC - Communications<br />
ADC<br />
Encode<br />
Digital<br />
Modulation<br />
DAC<br />
DAC<br />
Decode<br />
Digital<br />
Demod<br />
ADC<br />
STR<br />
VCXO<br />
PLL<br />
Freq<br />
Synth<br />
Difficulties<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.12
SoC - Consumer Electronics<br />
Audio<br />
Video<br />
Servo<br />
VoCoder MD DCC CD<br />
Digital Camera Digital Camcorder<br />
CD CDROM DVD Robot<br />
Image<br />
Sensor<br />
LCD<br />
Display<br />
ADC<br />
DAC<br />
Video<br />
Encode<br />
Video<br />
Encode<br />
MPU<br />
Memory<br />
Mass Storage<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.13
SoC – Multiple Technologies<br />
Logic<br />
SRAM<br />
Flash<br />
E-DRAM<br />
CMOS RF<br />
FPGA<br />
FRAM<br />
MEMS<br />
Chemical Sensors<br />
Electro-Optical<br />
Electro-Biological<br />
98 00 02 04 06 08 10 12<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.14
SoC Trends –PDA SoC-LP Driver<br />
Year<br />
2001<br />
2004<br />
2007<br />
2010<br />
2013<br />
2016<br />
<strong>Technology</strong> (nm)<br />
130<br />
90<br />
65<br />
45<br />
32<br />
22<br />
Supply (V)<br />
1.2<br />
1<br />
0.8<br />
0.6<br />
0.5<br />
0.4<br />
Frequency (MHz)<br />
150<br />
300<br />
450<br />
600<br />
900<br />
1200<br />
Per<strong>for</strong>m (GOPs)<br />
0.3<br />
2<br />
15<br />
103<br />
720<br />
5042<br />
Avg Power (W)<br />
0.1<br />
0.1<br />
0.1<br />
0.1<br />
0.1<br />
0.1<br />
Stdby Pwr (mW)<br />
2.1<br />
2.1<br />
2.1<br />
2.1<br />
2.1<br />
2.1<br />
Battery (Wh/Kg)<br />
120<br />
200<br />
200<br />
400<br />
400<br />
-<br />
Applications<br />
Still<br />
Image<br />
Web<br />
Mailer<br />
Schdl<br />
Real Time Video<br />
TV Telephone<br />
Voice Recogn.<br />
Authentication<br />
RT Interpretation<br />
TV Telephone<br />
Voice Recogn<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.15
Grand Challenges<br />
90nm<br />
65nm<br />
45nm<br />
Maximum Quality Design Productivity (Design)<br />
Power Management (Design)<br />
High Speed Device Interface (<strong>Test</strong>)<br />
Highly Integrated Design and SoCs (<strong>Test</strong>)<br />
New Reliability Screens (<strong>Test</strong>)<br />
22nm<br />
11nm<br />
2001 2003 2005 2007 2010 2013 2015<br />
<br />
<br />
Global Wiring Issues (Interconnect)<br />
Noise Management (Design)<br />
Error-Tolerant Design<br />
<br />
<br />
NTHU DTC 2002 P.16
<strong>Test</strong> Difficult Challenges<br />
90nm<br />
65nm<br />
45nm<br />
22nm<br />
11nm<br />
High Speed Device Interface<br />
Highly Integrated Design<br />
Reliability Screens<br />
Manufacturing <strong>Test</strong> Cost<br />
Modeling and Simulation<br />
2001 2003 2005 2007 2010 2013 2015<br />
<br />
<br />
DUT to ATE Interface<br />
<strong>Test</strong> Methodology<br />
Defect Analysis<br />
Failure Analysis<br />
Disruptive Device Technologies<br />
<br />
<br />
NTHU DTC 2002 P.17
<strong>Test</strong> Difficult Challenges - Revisit<br />
90nm<br />
65nm<br />
45nm<br />
22nm<br />
11nm<br />
High Speed Device Interface<br />
Highly Integrated Design<br />
Reliability Screens<br />
Manufacturing <strong>Test</strong> Cost<br />
Modeling and Simulation<br />
2001 2003 2005 2007 2010 2013 2015<br />
<br />
<br />
DUT to ATE Interface<br />
<strong>Test</strong> Methodology<br />
Defect Analysis<br />
Failure Analysis<br />
Disruptive Device Technologies<br />
<br />
<br />
NTHU DTC 2002 P.18
<strong>Test</strong> Difficult Challenges<br />
• High Speed Device Interface<br />
– High frequency and high pin count test socket<br />
– High speed serial interface requires high speed source/capture and<br />
jitter analysis. FDT/DFM techniques must be developed.<br />
– Device interface must not degrade BW, especially <strong>for</strong> LVDS.<br />
• Highly Integrated Design<br />
– Structure and specific DFT <strong>for</strong> embedded specialized cores.<br />
– Analog DFT and BIST techniques to simplify test interface.<br />
– RF and audio circuit embedded in large noisy digital blocks.<br />
– <strong>Test</strong> reuse <strong>for</strong> reusable cores in complex designs.<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.19
<strong>Test</strong> Difficult Challenges<br />
•Reliability Screens<br />
– Limited existing methodologies: burn-in v.s. thermal runaway, IDDq v.s<br />
large background current.<br />
– Identify novel infant mortality defect stress conditions.<br />
•Manufacturing <strong>Test</strong> Cost<br />
– Cost reduction: massively parallel, wafer level test, wafer level burn in.<br />
– Through DFT to reduce test pin count and time and equipment reuse.<br />
– <strong>Test</strong> standards to enable test content reuse and manufacturing agility.<br />
•Modeling and Simulation<br />
– Logic and timing accurate simulation of the ATE, DIB, and DUT.<br />
– Accurate simulation model <strong>for</strong> pin electronics, power supply, and DIB.<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.20
<strong>Test</strong> Trend – <strong>Test</strong> <strong>Technology</strong> Requirements<br />
• Potential Yield Losses<br />
• Automated <strong>Test</strong> Equipment Cost<br />
• <strong>Test</strong> and Yield Learning<br />
• IDDQ <strong>Test</strong>ing<br />
• High Frequency Serial Communications<br />
• High Per<strong>for</strong>mance ASIC <strong>Test</strong> Requirement<br />
• High Per<strong>for</strong>mance Microprocessor <strong>Test</strong> Requirement<br />
• Low End Microcontroller <strong>Test</strong> Requirements<br />
• Mixed Signal <strong>Test</strong>ing<br />
• Equipment <strong>for</strong> <strong>Test</strong>ing Devices Designed with DFT<br />
• Semiconductor Memories <strong>Test</strong> Requirements<br />
• Reliability <strong>Technology</strong> Requirements<br />
• Material Handling <strong>Technology</strong> Requirement<br />
• Device Interface <strong>Technology</strong> Requirement<br />
• Potential Solutions<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.21
<strong>Test</strong> Challenges – Yield Losses<br />
90nm<br />
600ps<br />
40 ps<br />
75nm<br />
Device Period<br />
450ps<br />
30ps<br />
60nm<br />
Resolution (5%)<br />
300ps<br />
20ps<br />
45nm<br />
Overall Timing Accuracy<br />
150ps<br />
10ps<br />
30nm<br />
2001 2002 2003 2004 2005 2006 2007<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.22
<strong>Test</strong> Challenges – Yield Losses<br />
1.8ns<br />
2ns<br />
0.3ns<br />
Device Period: 2ns<br />
Timing Accuracy: 0.2ns<br />
Timing <strong>Test</strong> at: 1.8ns<br />
Guard Band: 0.2ns<br />
Yield Loss: ~5%<br />
Device Period: 0.3ns<br />
Timing Accuracy: 0. 1ns<br />
Timing <strong>Test</strong> at: 0.2ns<br />
Guard Band 0.1ns<br />
Yield Loss: 30~40%<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.23
<strong>Test</strong> Trend – ATE Equipment Cost<br />
<strong>Test</strong>Cost = b + ∑ ( m×<br />
x)<br />
n<br />
<strong>Test</strong>er Segment<br />
b<br />
Base Cost<br />
m<br />
Cost Per Pin<br />
x<br />
Pin Count<br />
High Per<strong>for</strong>mance ASIC/MPU<br />
Mixed Signal<br />
250 ~ 400K<br />
250 ~ 350K<br />
2.7 ~ 6K<br />
3 ~ 18K<br />
512<br />
128 ~ 192<br />
DFT <strong>Test</strong>er<br />
100 ~ 350K 0.15 ~ 0.65K 512 ~ 2500<br />
Low End Microcontroller/ASIC<br />
Commodity Memory<br />
RF<br />
200 ~ 350K<br />
200+<br />
200+<br />
1.2 ~ 2.5K<br />
0.8 ~ 1K<br />
~ 50K<br />
256 ~ 1024<br />
1024<br />
32<br />
* DFT and BIST are main stream in high end digital but penetration<br />
into analog and SoC.<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.24
<strong>Test</strong> Trend – <strong>Test</strong> and Yield Learning<br />
• Software-based fault localization tools.<br />
– Based on pass/fail test, voltage test, and IDDq test results.<br />
– Integrating layout-based likelihood and/or in-line test results.<br />
• Hardware-based fault localization methodologies.<br />
– Multiple physical measurement points<br />
– Fault distinguishing and diagnosis oriented test generation<br />
– Design <strong>for</strong> debug or on-line repair.<br />
• Non-destructive inspection<br />
– Monitoring timing-varying signal<br />
– Laser Voltage Probe (LVP)<br />
– Picosecond Imageing Circuit Analysis (PICA)<br />
– X-ray tomography<br />
• Signature analysis techniques <strong>for</strong> failure analysis<br />
– Tighter coupling between design, timing, and diagnosis tools.<br />
– Integration of process monitoring structure into diagnostics.<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.25
<strong>Test</strong> Trend – IDDq <strong>Test</strong>ing<br />
Year<br />
2001<br />
2003<br />
2005<br />
2008<br />
2002<br />
2002<br />
IDDQmax (mA)<br />
30–70<br />
70-150<br />
150-400<br />
400-1.6A<br />
1.6-8A<br />
8-20A<br />
• Use Delta IDDQ or IDDQ ratio<br />
• Transient and charged-base Idd techniques.<br />
• Subtrate biasing to control Vt.<br />
• Power supply partitioning<br />
• IDDQ measurement <strong>for</strong> multiple Vdd voltage<br />
• IDDQ limits based on comparison with neighboring dies.<br />
• IDDQ limits as a function of other parameters (speed)<br />
• Built-in IDDQ sensor or on-chip measurement aids.<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.26
<strong>Test</strong> Trend – High Frequency Serial Communication<br />
2001<br />
2.5Gbps<br />
2002<br />
3.125G<br />
2004<br />
10Gbps<br />
2006<br />
40Gbps<br />
2016<br />
80Gbps<br />
• Giga bit serial I/Os<br />
– SerDes, SONET/SDH, Gigabit Ethernet, Fiber Channel, Serial ATA,<br />
Infiniband, Flat Panel Link,RAMBus, LVDS, TMDS, etc.<br />
• Frequency<br />
– CMOS: 3.125Gbps (‘01), SiGel: 10Gbps, GaAs and InP: 40Gbps<br />
• Port Count:<br />
– 20-80 pairs in 2001, 100+ pairs in 2002.<br />
• Jitter Measurement:<br />
– 2.5Gbps SerDes: PP Jitter=40ps,
<strong>Test</strong> Trend – Mixed Signal <strong>Test</strong><br />
ADC<br />
Encode<br />
Digital<br />
Modulation<br />
DAC<br />
DAC<br />
Decode<br />
Digital<br />
Demod<br />
ADC<br />
STR<br />
VCXO<br />
PLL<br />
Freq<br />
Synth<br />
Difficulties<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.28
ATS 2000 Panel Discussion<br />
Mixed Signal <strong>Test</strong>ing:<br />
Is Mixed-Signal Design-<strong>for</strong>-<strong>Test</strong> on Its Ways?<br />
<br />
<br />
Chauchin Su<br />
Department of Electrical Engineering, National Central University<br />
Chung-Li, Taiwan 32054, R.O.C.<br />
http://www.ee.ncu.edu.tw/~ccsu<br />
ccsu@ee.ncu.edu.tw<br />
<br />
<br />
NTHU DTC 2002 P.29
The Answer is<br />
YES<br />
NO<br />
MAY<br />
BE<br />
SO<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.30
250nm<br />
200nm<br />
150nm<br />
100nm<br />
Yes. From Digital Point of View<br />
• Look at the DFT/BIST roadmap of digital circuits.<br />
• Look at the SIA roadmap (ITRS 1999).<br />
Mixed Signal Instrument<br />
BIST/DFT<br />
Probe & <strong>Test</strong> Socket<br />
IDDQ <strong>Test</strong>ing<br />
<strong>Test</strong> Development Time<br />
50nm<br />
1997 1999 2001 2003 2006 2009 2012<br />
<br />
<br />
Fault Model<br />
Rules to <strong>Test</strong><br />
Standard <strong>Test</strong><br />
Software<br />
DFT<br />
Failure Analysis<br />
<br />
<br />
NTHU DTC 2002 P.31
No, From Practical Point of View<br />
• Analog circuit designers design perfect circuits.<br />
• No one dare to change it.<br />
v s<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.32
May Be. It will never happen.<br />
• Analog are giving up ground to digital.<br />
• The per<strong>for</strong>mance becomes very critical.<br />
RF, IF, BB, AD/DA, Digital<br />
RF, IF, AD/DA, Digital<br />
RF, AD/DA, Digital<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.33
May Be. It will never happen.<br />
• Analog design is an endless game.<br />
• Ft is always 10 times the operating frequency.<br />
T Nodes<br />
1997<br />
1999<br />
2001<br />
2003<br />
2006<br />
2009<br />
2012<br />
Feature Size (nm)<br />
250<br />
180<br />
150<br />
130<br />
100<br />
70<br />
50<br />
Supply Voltage<br />
2.5~1.8<br />
1.8~1.5<br />
1.6~1.3<br />
1.5~1.2<br />
1.2~0.9<br />
0.9~0.6<br />
0.8~0.5<br />
Frequency (GHz)<br />
1.8~2.5<br />
2.5~3.5<br />
3.0~4.0<br />
3.5~5.0<br />
5.0~6.5<br />
6.5~9.5<br />
9.5~13<br />
Current (uA)<br />
100<br />
75<br />
60<br />
50<br />
40<br />
30<br />
20<br />
Fmax<br />
25<br />
35<br />
40<br />
50<br />
65<br />
90<br />
120<br />
Ft<br />
20<br />
30<br />
35<br />
40<br />
55<br />
75<br />
100<br />
Noise Figure<br />
2<br />
1.5<br />
1.3<br />
1.2<br />
30<br />
>35<br />
>40<br />
>40<br />
>40<br />
<br />
<br />
<br />
<br />
NTHU DTC 2002 P.34
So. <strong>Test</strong> Resource Partitioning<br />
Analog<br />
Analog<br />
ADC<br />
DAC<br />
MPU<br />
RAM<br />
External<br />
Instrument<br />
Loop<br />
Back<br />
Digital<br />
DSP<br />
ROM<br />
• Specialized DFT and BIST <strong>for</strong> digital modules.<br />
• ATE assisted DFT/BIST <strong>for</strong> analog modules<br />
• External instruments are responsible <strong>for</strong> reference<br />
signal generation.<br />
• DSP and MPU are the resources <strong>for</strong> analog signal<br />
metrology and response analysis.<br />
<br />
<br />
<br />
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NTHU DTC 2002 P.35
<strong>Test</strong> Trend – Potential Solutions<br />
DFT/BIST Methodology<br />
Current DFT/BIST/IDDQ<br />
New DFT/BIST/IDDQ<br />
Aanlog DFT/BIST<br />
Design Owns <strong>Test</strong><br />
Cost of <strong>Test</strong><br />
100% DFT/BIST<br />
Standard <strong>Test</strong> Lib<br />
Design to <strong>Test</strong><br />
<strong>Test</strong> Reuse<br />
High Per<strong>for</strong>mance Interface<br />
> GHz Interface<br />
+/-1% Temp Control<br />
Reliability Screen<br />
New Acceleration Mechanism<br />
01 03 05 07 09 11 13 15<br />
Research Development Production<br />
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01 03 05 07 09 11 13 15<br />
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NTHU DTC 2002 P.36
System on Chip<br />
Design and <strong>Test</strong>?<br />
Analog<br />
Analog<br />
ADC<br />
DAC<br />
MPU<br />
RAM<br />
Digital<br />
DSP<br />
ROM<br />
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NTHU DTC 2002 P.37
So, Come and Join <strong>VTTF</strong> Taiwan.<br />
<strong>VTTF</strong>: <strong>VLSI</strong> <strong>Test</strong> <strong>Technology</strong> Forum<br />
http://eda.ee.nthu.edu.tw/<strong>VTTF</strong>/<br />
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NTHU DTC 2002 P.38