Brief introduction to SiC research and development in Korea

A seminar by IEEE Sweden Electron Devices Chapter
Tuesday June 16 th , 2009, 13.30 – 14.30
KTH Electrum seminar room, Isafjordsgatan 22, Kista
Brief introduction to SiC research and development in Korea
Sung-Jae Joo
Korea Electrotechnology Research Institute
Abstract : Korea electrotechnology research institute (KERI) is a government-funded
national institution of Korea and specializes in the R & D of materials and equipments
for heavy electric industry. KERI has started research on SiC since 1999, and research
topics have evolved from the basic process technologies to power devices, including
diodes and FETs. Recently, the global trend of eco-friendly economic development
facilitates the R & D of more energy-efficient power devices, and SiC is regarded as the
ideal candidate. In this presentation, the general status of KERI and SiC R & D
community in Korea is briefly reviewed for KTH researchers.

Sung-Jae Joo, Ph. D.
Korea Electrotechnology Research Institute
Energy Efficient Semiconductors Research Center,
Advanced Materials Research Division
70 Boolmosangil, ChangWon, GyeongNam, 641-120, Korea
Phone : +82-55-280-1627, Fax : +82-55-280-1590
E-mail : sj_joo@keri.re.kr
Education
Ph. D. in Materials Science & Engineering Feb., 2000
Seoul National University, Seoul, Korea
Thesis : Amorphous Si deposition by ECR-PECVD and Analysis
Advisor : Prof. Euijoon Yoon (Dept. of Mater. Sci. & Eng., Seoul Nat’l Univ.)
Master of Engineering in Materials Science & Engineering Feb., 1995
Seoul National University, Seoul, Korea
Thesis : Low-temp. Si 1-x Ge x heteroepitaxy by ECR-PECVD
Advisor : Prof. Euijoon Yoon (Dept. of Mater. Sci. & Eng., Seoul Nat’l Univ.)
Bachelor of Engineering in Materials Science & Engineering Feb., 1993
Dep’t of Mater. Sci. & Eng., Seoul Nat’l Univ., Seoul, Korea
Professional Experience
Senior Researcher
Apr., 2006 - Present
Korea Electrotechnology Research Institute, ChangWon, GyeongNam, 641-120, Korea
- SiC unit process, process integration, device fabrication, and characterization
Process Engineer Apr., 2003 - Mar., 2006
System LSI division, Samsung Electronics Co., Ltd., YongIn, 446-711, Korea
- Process development of 1.3M- & 2M-pixel CMOS image sensor devices
Process Engineer Feb., 2000 - Mar., 2003
Memory R&D division, Hynix Semiconductor Inc., Ichon, 136-1, Korea

- Unit process development (Si selective epitaxy & In situ doping) for DRAM devices employing
sub-100nm process technology
Recent Publications
• S.-J. Joo, I.-H. Kang, W. Bahng, S.C. Kim, and N.-K. Kim, “Fabrication of 1.2 kV Ni/4H-SiC
junction barrier controlled Schottky diodes with single p+ ion implantation process”,
Journal of the Korean Physical Society, Vol. 54, p. 1802, 2009.
• I.-H. Kang, J.Y. Song, S.-J. Joo, W. Bahng, S.C. Kim, and N.-K. Kim, “Effect of the doping
concentration and space of both p-grid and field limiting ring on 4H-SiC junction barrier
Schottky diode with single ion implantation process”, Materials Science Forum Vols.
600-603, p. 959, 2009.
• S.-J. Joo, J.Y. Song, I.-H. Kang, W. Bahng, S.C. Kim, and N.-K. Kim, “Electrical
characteristics of Ni/Ti/Al ohmic contacts to Al-implanted p-type 4H-SiC”, Journal of
the Korean Institute of Electrical and Electronic Materials Engineers (in
Korean), Vol. 21, p. 968, 2008.
• W. Bahng, H.J. Cheong, I.-H. Kang, S.J. Kim, S.C. Kim, S.-J. Joo, and N.-K. Kim,
“Modification of surface layer during high temperature annealing and its effects on the
SiC diode characteristics”, Materials Science Forum Vols. 556-557, p. 595, 2007.