19.01.2014 Views

Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

JUNE 27 TUESDAY AFTERNOON<br />

WS-18-TuA-INV.8 ADVANCED PROCESS AND EQUIPMENT CONTROL (APC/AEC)<br />

THROUGH FINE GAS ANALYSIS IN VACUUM SYSTEMS FOR SEMICONDUCTOR<br />

MANUFACTURING. Giuseppe FAZIO, ST Microelectronics - Italy<br />

In the Advanced Process and Equipment Control (APC/AEC) the studies and the evaluations related<br />

to new methodologies and new devices are considered key activities.<br />

In vacuum chamber the Optical Emission Spectroscopy (OES) and Residual Gas Analyzer (RGA)<br />

are two instruments consolidated and widely utilized due to their high performance and flexibility.<br />

OES<br />

RGA<br />

OES and RGA applications<br />

Main application<br />

Other application<br />

Process Control<br />

Equipment Control<br />

(i.e., End Point Detection) (i.e., finger print equipment)<br />

Equipment Control<br />

Process Control<br />

(i.e., leak detection)<br />

(i.e., degas step optimization)<br />

Also from APC/AEC point of view these two instruments (OES and RGA) and their various applicable<br />

methodologies (process and equipment control) have to be continuously developed.<br />

Some of our direct experiences concerning these aspects will be showed.<br />

OES example<br />

Optical emission spectroscopy (OES) is widely used to perform in situ characterization and plasma<br />

processing control, as for instance in dry etching end point detection.<br />

In current practice only UV-VIS range is used, which corresponds to electronic transitions of molecular<br />

or atomic levels.<br />

However, when areas to be patterned within the wafer are small, and etching selectivity is not well<br />

known, the OES could not be enough.<br />

To detect the optical end point a new portion of the spectra has been studied (corresponding to molecular<br />

vibrational modes) and its emission enhancement.<br />

RGA example<br />

When the pressure is lower than 10mTorr a miniature array of quadrupole mass spectrometers has<br />

been considered (Micropole sensor).<br />

This sensor has a small size and it is feasible to install it in a small volume, without loosing high performances,<br />

and turns out to be very flexible on applications.<br />

Recently an instrument for advanced diagnostic using the RGA Micropole has been developed.<br />

This instrument allows technicians to control the vacuum chambers in order to have higher accuracy<br />

and faster analysis, requirements more and more important for hi-tech industries like the semiconductor<br />

one.<br />

When the pressure is higher than 10mTorr the traditional RGA (quadrupole) requires pump system.<br />

For this reason the system is not suitable for industrial field: cumbersome and complicated from a<br />

maintenance point of view.<br />

Therefore, we have evaluated alternative instruments: ICP plasma source, analysis by OES of atomic<br />

and molecular emission due to plasma excitation of residual gases.<br />

Hardware malfunctions were simulated on etch equipment and the consequent behaviour of the<br />

plasma emission spectrum was analyzed in order to evaluate and quantify detectable differences.<br />

The installation of this type of sensor on Transfer Module of the metal etch tool has been planned for<br />

the detection in line for leakage and humidity. In particular the focus concerns the wet cleaning recovery<br />

after PM and the reduction of the possible particle contamination produced by humidity.<br />

83

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!