Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...

JUNE 28 WEDNESDAY AFTERNOON
RIVA-TF-WeA-P.1 SEM AND XPS ANALYSIS OF POLYCRYSTALLINE GAN FILMS
GROWN BY CYCLIC PULSED LASER DEPOSITION. P. Sanguino 1 , R. Schwarz 1 . 1 Departamento
de Física, Instituto Superior Técnico, Lisboa, Portugal M. Wilhelm 2 , M. Kunst 2 2 Hahn-
Meitner-Institut, Solare Energetik, Berlin, Germany O. Teodoro 3 Departamento de Física, Universidade
Nova de Lisboa, Monte de Caparica, Portugal
We describe a detailed study of Scanning Electron Microscopy (SEM) combined with Energy Dispersive
Spectroscopy (EDS) analysis to study composition and structure of 500 nm thick polycrystalline
GaN samples. The films have been deposited by Cyclic-Pulsed Laser Deposition (Cyclic-PLD)
with a Nd:YAG nanosecond pulsed laser at 1064 nm. SEM pictures of the GaN layers revealed a
structure composed of grains with typical dimensions of 200 nm. Coalescence of the grains was
more evident for a 1 m thick sample. EDS mapping of the GaN layer was performed for Ga, N, O,
and Al and could be related with the corresponding SEM scan. Both EDS and XPS composition
analysis pointed to a Ga rich (or N deficient) GaN layer.
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