Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
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JUNE 26 MONDAY MORNING<br />
ETCHC-MoM-OR.5 OES TIME-RESOLVED CHARACTERIZATION OF THE<br />
DEPOSITION OF MULTILAYERED COATINGS. J. Romero, A. Lousa. Departamento de<br />
Física Aplicada y Optica, Universidad de Barcelona, Avda. Diagonal 647, E-08028 Barcelona, Catalunya,<br />
Spain.<br />
Multilayered structures with nanometric period and manocomposites materials are probably the most<br />
promising alternatives to improve the properties of conventional coatings used for mechanical applications.<br />
Multilayered structures are generally formed by alternatively piling two materials in a periodic<br />
sequence ABABAB….., with a period Λ. Most of the multilayered structures referred in the literature<br />
present mechanical properties that surpass those of their individual materials: increase of<br />
hardness, elastic limit and toughness, and reduction of internal stresses.<br />
We have developed a process for the deposition of multilayered structures by r.f. magnetron sputtering<br />
in a continuous process. A single cathode with a metallic target (Cr) is used, and the alternate<br />
deposition of two materials is achieved by periodically alternating the working gas composition. In<br />
this way, the deposition of metal/nitride, metal/carbide and nitride/carbide multilayers can be<br />
achieved just switching the gas composition between pure Ar and an Ar+N 2 , pure Ar and an<br />
Ar+CH 4 , and Ar+N 2 mixture and Ar+CH 4 respectively.<br />
Cr/CrN multilayered coatings with bilayer periods (Λ) between 120 and 2 nm were deposited by r.f.<br />
magnetron sputtering (13.56 MHz) on Si wafers. The coatings were deposited by reactive sputtering<br />
from a 3-in. diameter pure Cr target (99.99% purity) with a r.f. input power of 100 W and a targetsubstrate<br />
distance of 5 cm. Two independent mass-flow meters controlled each gas flux (Ar and N 2 )<br />
during deposition. Chromium thin films were deposited at 1.0 Pa pure Ar pressure, while chromium<br />
nitride films were produced in Ar–N2 reactive mixtures where the total working pressure was 1.2 Pa<br />
and the nitrogen partial pressure was 0.2 Pa. The Cr/CrN multilayers were deposited alternating both<br />
experimental conditions. Cr and CrN growth rates were 0.8 and 0.6 μm/h, respectively; slow enough<br />
to be able to produce multilayers in the nanometric range<br />
Two nitrogen-related optical signals from plasma de excitation (N 0 2 = 337.1 nm and N + 2 = 391.4 nm,<br />
were found to be the most easily monitored to appreciate changes in N 2 chamber presence. These<br />
two well-defined nitrogen optical emission lines were measured in a time-resolved way during multilayer<br />
deposition in order to monitor nitrogen in chamber residence time responses to the cyclic<br />
switches in its flow.<br />
Exponential time responses were found for cyclic switches, with relaxation times of 1.1 s for the N 2<br />
switch off and 0.9 s for the switch on. These times are less than 4% of the deposition time corresponding<br />
to a bilayer for bilayer periods down to 6-9 nm. Hence, for the multilayers with bilayer<br />
thicknesses higher than 9 nm a well defined multilayer structure is expected, while for values lower<br />
than 6 nm an increasing influence of interlayers and materials mixing is more probable to occur.<br />
The multilayer structure was confirmed by TEM and LA-XRD measurements for bilayer periods<br />
higher than 6 nm, what confirms the in-situ predictions of our OES measurements. The highest hardness<br />
of the coatings set, 28 GPa, was obtained for the coating with the theoretic thinnest bilayer period<br />
(Λ=2.1 nm). This maximum hardness was more than 100% higher than the expected value from<br />
the rule-of-mixtures applied to CrN and Cr coatings<br />
In summary, time-resolved OES plasma measurements are a useful tool to monitoring in-situ the<br />
formation of well defined multilayer structures in a continuous process, with multilayer periods<br />
down to a few nanometres.<br />
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