Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
Wüest M. 51 Wykes M. 82 Yamaguchi M. 17 Ybarra G. 129 Yubero F ...
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JUNE 26 MONDAY MORNING<br />
RIVA-TF-MoM-INV.1THIN FILM STACKS FOR SPINTRONIC DEVICES: PREPARATION<br />
AND CHARACTERIZATION, P.P.Freitas, S.Freitas and R.Ferreira. INESC MN, Lisbon, Portugal<br />
and Physics Department, Instituto Superior Tecnico, Lisbon, Portugal<br />
Physical Vapour Deposition (PVD) and Ion Beam Deposition (IBD) tools are described as used for the<br />
preparation of spintronic device stacks ( hard disk read heads-spin valve and tunnel junction,<br />
MRAMS, sensor stacks). These tools allow the uniform deposition of multilayered stacks over 8” wafers,<br />
where each individual layer has thickneses down to 1nm. The formation of nm thick AlOx and<br />
MgO barriers, critical to the formation of state of the art tunnel barriers is revised. For device patterning,<br />
both ion-milling and reactive ion etching techniques are used, the latter becoming necessary for<br />
device features below 100nm. The complexity of the magnetic stacks poses several challenges for reactive<br />
etching techniques. Finally, spintronic device examples will be given, starting with magnetic<br />
tunel junction read heads for magnetic data storage at densities beyond 100Gbit/in2, followed by<br />
MRAMS, and different types of field sensors for position, current, and biomedical imaging applications.<br />
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