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JUNE 26 MONDAY AFTERNOON
RIVA-TF-MoA-OR.12 STRUCTURAL, ELECTICAL AND OPTICal PROPERTIES OF
INDIUM-TIN-OXIDE THIN FILMS preparED by pULSED LASER DEPOSITION. A.
Khodorov, M. Piechowiak* and M.J.M.. Gomes. Physics Center, University of Minho, 4710-057
Braga, Portugal. *Department of Material Science, University of Silesia, 41-200 Cosnowiec, Poland
Indium-tin-oxide (ito) films show an interesting and technologically important combination of properties:
excellent substrate adherence, hardness, chemical inertness, good electrical conductivity and
high transparency in the visible range of electromagnetic spectrum. for using ito films as transparent
electrodes to grow multilayer structures the crystalline quality and preferred orientation of domains
in the films are very important.
In this work we prepared ito thin films by pulsed laser deposition at different temperatures (from 24
up to 600 o c) with several oxygen pressures on glass substrate. the texture selection and cell parameters
were studied with help of x-ray diffraction. the sheet resistance was determined by a four-pointprobe
method at room temperature. the optical properties were examined in the wave-length range
200 - 3200 nm. the dielectric function of ito film was obtained by fitting the measured transmission
and reflection spectra to a dispersion relation, which combines the drude model and lorentz oscillator.
the well crystallized, highly textured and highly transparent films were grown at high temperatures.
variation of substrate temperature as well as oxygen pressure during deposition results in different
structural, electrical and optical properties. the correlation between deposition conditions and
physical properties of ito films was observed and analysed.
This work was supported by fct (grant sfrh/bpd/11675/2002)
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