17.01.2014 Views

Untitled - IAP/TU Wien - Technische Universität Wien

Untitled - IAP/TU Wien - Technische Universität Wien

Untitled - IAP/TU Wien - Technische Universität Wien

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Nanostructure Characterisation by Electron Beam Techniques<br />

A R XPS - simulation and data analysis<br />

!"#$%&'() * +#,"#-./0(+#1"#234056 !<br />

"#$!%&'()'*+!,-(./012!345667+!%856646!%&'()'*+!9'&:0*;!<br />

!<br />

*corresponding author: s.oswald@ifw-dresden.de<br />

Thin film technology developments require both reliable thin-layer and interface characterization. A<br />

non-destructive method often used for depth-profile characterization in the nm thickness range is the<br />

angle-resolved X-ray photoelectron spectroscopy (ARXPS). However, to extract the in-depth information<br />

from such measurements in practice, dedicated mathematical models have to be applied. A further limitation<br />

is that commonly the use of ARXPS is restricted away from the near-surface measuring angles due to effects<br />

of elastic scattering on the measured intensities in this region. A further major point is the well-accepted<br />

restriction that the information content of the ARXPS measurements should not be overvalued [1].<br />

In this context the paper discusses the following topics:<br />

(I) A procedure for computer simulation of reliable ARXPS data for complex near-surface structures<br />

considering elastic scattering and analyzer acceptance [2,3]. This measurement simulation routine is based<br />

on a Monte-Carlo simulation of electron paths in a small surface volume, which can be filled in principle<br />

with any element distribution. (II) Demonstration of a modified common straight-line approximation based<br />

EXCEL-routine for ARXPS data evaluation, which applies a simple empiric angle correction in the<br />

high-angle region [4]. The two correction parameters, i.e. angle and strength, have to be determined from a<br />

known thin film standard and can later on be implemented for similar unknown structures. (III) Examples for<br />

multiple well-approximated solutions found for simulated ARXPS measurements at exactly-defined but more<br />

complex surface structures. Here the necessity of the use of problem-specific boundary conditions is<br />

underlined.<br />

As a summary it is concluded that measurement simulation is a very useful tool for the estimation of<br />

the limits of ARXPS interpretation and that the careful use of high-angle information can be helpful in the<br />

case of special surface structures. Nevertheless the lack of information content cannot be overcome.<br />

Partial funding of the work by DFG (Grant No. $!#7789:;7< is acknowledged.<br />

References<br />

[1] P.J. Cumpson, J. Electron Spectrosc. Rel. Phenom. 73 (1995) 25<br />

[2] S. Oswald, F. Oswald, J. Appl. Phys. 100 (2006) 104504<br />

[3] S. Oswald, F, Oswald, J. Appl. Phys. 109 (2011) 034305<br />

[4] S. Oswald, F. Oswald, Surf. Interface Anal. 44 (2012) 1124#<br />

40

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!