Implementing Modulation Functions in Microwave Frequency ...
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ALSO PUBLISHED ONLINE:<br />
www.highfrequencyelectronics.com<br />
OCTOBER2011<br />
4G PA DESIGN GETS HELP<br />
FROM ACCURATE CIRCUIT<br />
ENVELOPE SIMULATION<br />
Onl<strong>in</strong>e Edition<br />
JUMP DIRECTLY TO THE<br />
TABLE OF CONTENTS<br />
JUMP DIRECTLY TO THE<br />
ADVERTISER INDEX<br />
Copyright © 2011 Summit Technical Media, LLC<br />
INSIDE THIS ISSUE:<br />
Wafer Level Test<strong>in</strong>g of Chip Scale Packag<strong>in</strong>g<br />
Modulat<strong>in</strong>g <strong>Microwave</strong> <strong>Frequency</strong> Synthesizers<br />
Technology Report—Cable & Connector News Update<br />
Featured Products—Power Amplifiers, Materials, Services<br />
Tutorial—Performance of PCB Mounted Connectors<br />
Ideas for today’s eng<strong>in</strong>eers: Analog · Digital · RF · <strong>Microwave</strong> · mm-wave · Lightwave
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ALSO PUBLISHED ONLINE AT:<br />
OCTOBER2011<br />
www.highfrequencyelectronics.com Vol. 10 No. 10<br />
You can view this issue page-by-page, or click on any of<br />
the articles or columns <strong>in</strong> the Table of Contents below<br />
20<br />
frequency synthesizers<br />
<strong>Implement<strong>in</strong>g</strong><br />
<strong>Modulation</strong> <strong>Functions</strong><br />
<strong>in</strong> <strong>Microwave</strong><br />
<strong>Frequency</strong> Synthesizers<br />
Alexander Chenak<strong>in</strong><br />
36<br />
cover story<br />
Circuit Envelope<br />
Simulation: a Powerful<br />
Resource for 4G Power<br />
Amplifier Design<br />
Josh Moore<br />
52<br />
wafer probe test<strong>in</strong>g<br />
Probe Test<strong>in</strong>g of Wafer<br />
Level Chip Scale<br />
Packag<strong>in</strong>g<br />
John Whittaker<br />
16<br />
hf applications<br />
Research News<br />
60<br />
tutorial<br />
RF/<strong>Microwave</strong><br />
Connectors on Pr<strong>in</strong>ted<br />
Circuit Boards<br />
Gary Breed<br />
28<br />
product coverage<br />
Featured Products<br />
44<br />
technology report<br />
News Update on Cable<br />
and Connector Bus<strong>in</strong>ess<br />
and Technology<br />
64<br />
product coverage<br />
New Literature<br />
80<br />
design notes<br />
Reader “Feedback”<br />
6 Editorial<br />
8 Meet<strong>in</strong>gs & Events<br />
Regular Columns<br />
12 In the News<br />
68 New Products<br />
78 Product Highlights<br />
79 Advertiser Index<br />
On the cover—This issue’s cover features AWR’s Circuit Envelope simulation capability,<br />
described <strong>in</strong> the article that beg<strong>in</strong>s on page 36. (Cover artwork courtesy AWR Corp.)<br />
October 2011 5
EDITORIAL<br />
Vol. 10 No. 10, October 2011<br />
Editorial Director<br />
Gary Breed<br />
gary@highfrequencyelectronics.com<br />
Tel: 608-437-9800<br />
Fax: 608-437-9801<br />
Publisher<br />
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scott@highfrequencyelectronics.com<br />
Tel: 603-472-8261<br />
Fax: 603-471-0716<br />
Associate Publisher<br />
Tim Burkhard<br />
tim@highfrequencyelectronics.com<br />
Tel: 707-544-9977<br />
Fax: 707-544-9375<br />
Associate Editor<br />
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katie@highfrequencyelectronics.com<br />
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Copyright © 2011, Summit Technical Media, LLC<br />
Re-Th<strong>in</strong>k<strong>in</strong>g How<br />
Products are<br />
Designed and Built<br />
Gary Breed<br />
Editorial Director<br />
In this column, and on our Design Notes<br />
page, I’ve written about energy-efficient<br />
products a few times. It’s one of my non-<br />
RF areas of <strong>in</strong>terest, but it <strong>in</strong>cludes electronic<br />
technology. As “wireless everywhere”<br />
cont<strong>in</strong>ues to grow, almost any electronic or<br />
electromechanical technology, <strong>in</strong>clud<strong>in</strong>g<br />
those used for energy efficiency, fit <strong>in</strong>to the<br />
niche covered <strong>in</strong> these pages.<br />
For example, <strong>in</strong> my home, I have been gradually replac<strong>in</strong>g <strong>in</strong>candscent<br />
bulbs with LED light<strong>in</strong>g. It’s still relatively expensive, but the performance<br />
level—ma<strong>in</strong>ly brightness and a pleas<strong>in</strong>g color of the light—have<br />
rapidly improved over the past couple years. As I’ve kept abreast of LED<br />
advances, one of the comments I recently read stuck with me: LEDs won’t<br />
reach their optimum price/performance level until houses and offices have<br />
electrical systems designed to support them, <strong>in</strong>clud<strong>in</strong>g several entirely<br />
new concepts for the construction trade:<br />
· Complete LED light<strong>in</strong>g fixtures, not just replacements for screw-<strong>in</strong><br />
<strong>in</strong>candescent bulbs or tubular fluorescent lights.<br />
· Voltage and current rat<strong>in</strong>gs of light<strong>in</strong>g system wir<strong>in</strong>g optimized for<br />
these low-voltage devices.<br />
· On/off and dimm<strong>in</strong>g controls located <strong>in</strong> each fixture, controlled wirelessly<br />
with ZigBee or one of the other IEEE 802.15 technologies.<br />
The last item on the above list makes LED fixtures part of an <strong>in</strong>tegrated<br />
household control system, expand<strong>in</strong>g the traditional HVAC (heat<strong>in</strong>g,<br />
ventilation and air condition<strong>in</strong>g) to <strong>in</strong>clude light<strong>in</strong>g—along with<br />
power management and security, all communicat<strong>in</strong>g wirelessly on a network<br />
that can be accessed remotely for the residents’ convenience, utilities’<br />
efficiency optimization, public safety communications and other functions<br />
that may not yet be conceived or developed.<br />
You can see how one item, the LED light<strong>in</strong>g fixture, is capable of be<strong>in</strong>g<br />
l<strong>in</strong>ked to many other pieces of a larger system. Of course, an <strong>in</strong>dividual<br />
homeowner may opt for a less complex system, or may prefer to allow less<br />
control by outside entities. A stand-alone system can use an <strong>in</strong>-home con-<br />
6 High <strong>Frequency</strong> Electronics
troller connected to a few key<br />
devices and appliances and still<br />
make a big difference <strong>in</strong> energy<br />
efficiency, comfort and convenience.<br />
Any <strong>in</strong>tegrated approach must<br />
work from the ground up. When my<br />
own home was built six years ago,<br />
only a few of the construction<br />
tradesmen understood the core concepts<br />
of an energy efficient home—<br />
orientation on the site, control of air<br />
leakage, proper <strong>in</strong>sulation, humidity<br />
control, air circulation, etc.<br />
Fortunately, most of the workers’<br />
bosses understood that these th<strong>in</strong>gs<br />
would eventually become standard<br />
build<strong>in</strong>g practices, even if they were<br />
considered “advanced” at the time.<br />
Expand<strong>in</strong>g on the Lesson<br />
Re-th<strong>in</strong>k<strong>in</strong>g build<strong>in</strong>g construction<br />
is one of the most visible examples<br />
of an evolv<strong>in</strong>g trend. The<br />
“plug-and-play” concept used <strong>in</strong> PC<br />
perpherals and accessories is<br />
another, where the device drivers<br />
are <strong>in</strong>cluded on-board, not <strong>in</strong>stalled<br />
separately. I’d <strong>in</strong>clude many of the<br />
automotive <strong>in</strong>dustry’s features as<br />
well, like tire pressure monitor<strong>in</strong>g,<br />
GM’s OnStar, or us<strong>in</strong>g GPS not just<br />
for navigation, but for monitor<strong>in</strong>g<br />
speed, distance traveled, terra<strong>in</strong><br />
type, elevation, etc.<br />
In the electronics world, we are<br />
now gett<strong>in</strong>g Internet-ready TV sets<br />
and smartphones with far more<br />
capabilities than we imag<strong>in</strong>ed.<br />
Wireless audio and video distribution<br />
is becom<strong>in</strong>g more easily available,<br />
and will eventually be <strong>in</strong>tegrated<br />
with other enterta<strong>in</strong>ment<br />
and communications when they all<br />
are able to support the necessary<br />
bandwidth.<br />
The essence of this recent trend<br />
is the ability for us to employ<br />
devices, appliances—and even <strong>in</strong>dividual<br />
light fixtures—as part of a<br />
larger, <strong>in</strong>tegrated system with<br />
many new capabilities. Some of<br />
those new capabilities are powerful,<br />
such as energy management.<br />
Some are oriented to personal convenience<br />
like navigation systems,<br />
while others are entirely for our<br />
enjoyment and enterta<strong>in</strong>ment,<br />
such as multi-player gam<strong>in</strong>g and<br />
flexible distribution of audio/video<br />
programm<strong>in</strong>g.<br />
As designers, all of you need to<br />
remember that there is no such<br />
CUSTOM<br />
INTEGRATED<br />
ASSEMBLIES<br />
Teledyne Cougar’s RF and<br />
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your design block diagram.<br />
A<br />
th<strong>in</strong>g as “the way it’s always been<br />
done.” The way th<strong>in</strong>gs have been<br />
done recently may seem established,<br />
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the status quo is a mov<strong>in</strong>g target.<br />
Your job is to take the best<br />
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VHF Band 1.0 Watt Amplifier with RF Bypass (A)<br />
Output of 1 watt from 35 to 350 MHz, 29 dB ga<strong>in</strong> and 3 dB noise figure, this<br />
amplifier assembly <strong>in</strong>corporates an RF bypass switch. You can route the RF<br />
through the amplification stages, or remove the DC bias from the switch and bypass<br />
the amplifier.<br />
2 to 18 GHz 6 Channel Downconverter (B)<br />
Teledyne Cougar's Six Channel 2 - 18 GHz (RF and LO) downconverter operates with<br />
an IF of ~960 MHz, provid<strong>in</strong>g 25 dB of RF-IF ga<strong>in</strong>, and bandwidth of ~500 MHz. This<br />
downconverter operates on a s<strong>in</strong>gle LO at -6 dBm which is amplified, split, then<br />
aga<strong>in</strong> amplified to each of the 6 channels. Integrated <strong>in</strong>to each channel is a range<br />
extension switch, controlled by a TTL <strong>in</strong>put and add<strong>in</strong>g 20 dB attenuation. Noise<br />
figure is ~13.5 dB and output IP3 is ~25 dBm. The downconverter is 2-sided,<br />
hermetically sealed and designed for rugged applications.<br />
17 to 19 GHz QPSK Modulator (C)<br />
Differential Drive Digital QPSK (Quadrature Phase Shift Key<strong>in</strong>g) modulator operates<br />
across the 17.0 to 19.0 GHz frequency range. Modulator utilizes differential drive<br />
digital <strong>in</strong>puts (180° apart) to drive both of the bi-phase modulators (mixers)<br />
<strong>in</strong>tegrated <strong>in</strong>to the assembly. The QPSK modulator provides constant amplitude,<br />
90° vector: 0 (ref.), 90°, 180°, 270° and operates across the -55° to 85° C<br />
temperature range.<br />
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MEETINGS & EVENTS<br />
CONFERENCES<br />
November 6-9, 2011<br />
60th International Wire & Cable and Connectivity Conf.<br />
Charlotte, NC<br />
Information: Conference Web site<br />
http://www.iwcs.org/meet<strong>in</strong>g11.html<br />
November 10-11, 2011<br />
2011 Korea-Japan <strong>Microwave</strong> Conference<br />
Fukuoka, Japan<br />
Information: Conference Web site<br />
http://www.ieee-jp.org/japancouncil/chapter/MTT-<br />
17/kjmw2011/<br />
November 29- December 1, 2011<br />
Global MilSatCom 2011<br />
London, England<br />
Information: Conference Web site<br />
http://www.smi-onl<strong>in</strong>e.co.uk/2011globalmilsatcom51.asp<br />
November 29- December 2, 2011<br />
ARFTG 78th <strong>Microwave</strong> Measurement Symposium<br />
Tempe, AZ<br />
Information: Conference Web site<br />
http://www.arftg.org<br />
December 5-7, 2011<br />
IEDM—IEEE International Electron Devices Meet<strong>in</strong>g<br />
Wash<strong>in</strong>gton, D.C.<br />
Information: Conference Web site<br />
www.ieee-iedm.org<br />
December 5-8, 2011<br />
2011 Asia-Pacific <strong>Microwave</strong> Conference<br />
Melbourne, Australia<br />
Information: Conference Web site<br />
http://www.apmc2011.com<br />
December 18-20, 2011<br />
IEEE Applied Electromagnetics Conference (AEmC)<br />
and Indian Antenna Week<br />
Calcutta, India<br />
Information: Conference Web site<br />
http://www.ieee-aemc.org<br />
January 15-19, 2012<br />
IEEE Radio and Wireless Symposium, <strong>in</strong>clud<strong>in</strong>g:<br />
• 12th Topical Meet<strong>in</strong>g on Silicon Monolithic<br />
Integrated Circuits <strong>in</strong> RF Systems,<br />
• 2012 IEEE Topical Conference on Biomedical Wireless<br />
Technologies, Networks, and Sens<strong>in</strong>g Systems,<br />
• 2012 IEEE Topical Conference on Wireless Sensors<br />
and Sensor Networks, and<br />
• 2012 Topical Conference on Power Amplifiers for<br />
Wireless and Radio Applications<br />
Santa Clara, CA<br />
Information: Conference Web site<br />
http://www.www.radiowirelessweek.org<br />
March 4-8, 2012<br />
OFC/NFOEC 2012—Optical Fiber Communication and<br />
the National Fiber Optic Eng<strong>in</strong>eers Conference<br />
Los Angeles, CA<br />
Information: Conference Web site<br />
http://www.ofcnfoec.org/Home.aspx<br />
March 5-7, 2012<br />
IEEE International Workshop on Antenna<br />
Technology: Small Antennas and Unconventional<br />
Applications<br />
Tucson, AZ<br />
Information: Conference Web site<br />
http://www.cccmeet<strong>in</strong>gs.com/iwat2012.pdf<br />
April 1-4, 2012<br />
WCNC 2012—IEEE Wireless Communications and<br />
Network<strong>in</strong>g Conference<br />
Paris, France<br />
Information: Conference Web site<br />
http://www.ieee-wcnc.org/2012<br />
April 10-14, 2012<br />
The 28th International Review of Progress <strong>in</strong> Applied<br />
Computational Electromagnetics<br />
Columbus, OH<br />
Information: Conference Web site<br />
http://aces.ee.olemiss.edu<br />
June 10-15, 2012<br />
ICC 2012—IEEE International Conference on<br />
Communications<br />
Ottawa, Canada<br />
Information: Conference Web site<br />
http://www.ieee-icc.org/2012<br />
SHORT COURSES<br />
Besser Associates<br />
201 San Antonio Circle, Suite 115<br />
Mounta<strong>in</strong> View, CA 94040<br />
Tel: 650-949-3300<br />
Fax: 650-949-4400<br />
E-mail: <strong>in</strong>fo@besserassociates.com<br />
http://www.besserassociates.com<br />
Applied RF Techniques I<br />
November 14-18, 2011, Irv<strong>in</strong>g, TX<br />
Understand<strong>in</strong>g Digital Signal Process<strong>in</strong>g (DSP)<br />
November 14-16, 2011, Irv<strong>in</strong>g, TX<br />
Transceiver and Systems Design for Digital<br />
Communications<br />
November 14-16, 2011, Irv<strong>in</strong>g, TX<br />
Applied Analog/Mixed-Signal Measurements<br />
November 14-18, 2011, Irv<strong>in</strong>g, TX<br />
Fundamentals of WCDMA, HSPA & LTE<br />
November 14-16, 2011, Irv<strong>in</strong>g, TX<br />
Power Conversion & Regulation Circuits for VLSI<br />
Systems<br />
November 16-18, 2011, Irv<strong>in</strong>g, TX<br />
8 High <strong>Frequency</strong> Electronics
Components and Integrated Assemblies<br />
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Receiver Multi-Coupler<br />
Renaissance Electronics’ Receiver Multi-Coupler Model #14A4NH is designed for next generation commercial<br />
wireless applications. With a very low noise figure, the signal-to-noise ratio of the system improves significantly.<br />
Redundant power supplies require less system ma<strong>in</strong>tenance and lower ma<strong>in</strong>tenance cost. This unit has been field tested<br />
for facilitat<strong>in</strong>g site expansion <strong>in</strong> a cost effective and timely manner.<br />
Multi-Band Comb<strong>in</strong>er<br />
Renaissance Electronics has designed a multi-band comb<strong>in</strong>er Model #18A3BAA for GSM 800/900/1800/1900 &<br />
UMTS frequency bands. This is ideal for <strong>in</strong>-build<strong>in</strong>g distributed antenna systems (DAS) where different operators<br />
require simultaneous coverage without <strong>in</strong>terference.<br />
Surface Mount Circulator<br />
Renaissance Electronics has designed an <strong>in</strong>novative <strong>in</strong>dustry first coplanar Surface Mount Circulator <strong>in</strong> the frequency<br />
bands of 4.2 - 4.4 GHz (3SMH6NA) and 5.3 - 5.9 GHz (3SMH6NB) for radio and radar altimeter applications. This<br />
design is re-flow compatible and suited for pick and place manufactur<strong>in</strong>g practices. This is a new addition to our<br />
surface mount designs.<br />
ADC/DAC Switch Matrix<br />
Renaissance Electronics Corporation has released a new DC to 500 MHz Switch Matrix with two <strong>in</strong>puts and six<br />
outputs. The 18A1NA will support the high level of <strong>in</strong>tegration required dur<strong>in</strong>g qualification test<strong>in</strong>g for digital and<br />
analog assemblies operat<strong>in</strong>g at microwave frequencies.<br />
35 GHz Integrated Transceiver<br />
HXI produces two highly <strong>in</strong>tegrated transceivers to support the ground-based and flight units for a UAV land<strong>in</strong>g<br />
system application. The program has been <strong>in</strong> production for 5+ years us<strong>in</strong>g our parts. The ground-based unit<br />
<strong>in</strong>tegrates 17 <strong>in</strong>dividual Millimeter Wave and IF circuit functions, <strong>in</strong>clud<strong>in</strong>g a 3.5W Ka-band power amplifier<br />
and a SP4T non-reflective switch matrix.<br />
60 GHz & E-Band Radio L<strong>in</strong>ks<br />
We have more high-capacity 60 GHz millimeter wave radios commercially deployed than any other manufacturer. Our<br />
standard off-the-shelf GigaL<strong>in</strong>k radio l<strong>in</strong>ks at 60 GHz and <strong>in</strong> E-Band are now be<strong>in</strong>g marketed worldwide. In addition,<br />
we have produced a number of variants of these radios for military and government usage, <strong>in</strong>clud<strong>in</strong>g analog l<strong>in</strong>ks,<br />
custom antenna configurations, HDTV usage, etc. Standard l<strong>in</strong>ks are full duplex, operate at a data rate of 1.25 Gbps<br />
and have near-zero latency. Each l<strong>in</strong>k is bench and range tested for dynamic range and bit errors.<br />
HDTV L<strong>in</strong>k System for 3D HD Sports Production<br />
Our GigaL<strong>in</strong>k HD wireless system is the ideal solution for the most challeng<strong>in</strong>g temporary deployment applications<br />
where studio quality feeds are essential. Dual channel operation supports 3D-HDTV, multiple camera<br />
feeds or as a redundant hot standby configuration for absolutely critical real-time acquisition.<br />
Millimeter Wave Components<br />
HXI offers a broad range of standard catalog components for use <strong>in</strong> prototyp<strong>in</strong>g new systems and for production<br />
requirements. These components consist of s<strong>in</strong>gle function modules that can easily be configured <strong>in</strong>to subsystems<br />
us<strong>in</strong>g waveguide or coax connections. The modules use mature technology such as GaAs MMICs and beam<br />
lead semiconductor devices, result<strong>in</strong>g <strong>in</strong> well established performance characteristics. The use of many common<br />
stocked parts results <strong>in</strong> low cost and fast delivery. Custom components <strong>in</strong>clude variations of many of our catalog<br />
products, such as LNAs, power amplifiers, frequency multipliers, mixers, switches and isolators/circulators.<br />
We are here to be part of your<br />
current and future <strong>in</strong>novation.<br />
Please contact us at<br />
978-772-7774 or<br />
www.rec-usa.com/Ad/8.html<br />
AS9100 Certified<br />
The New Th<strong>in</strong>k<strong>in</strong>g <strong>in</strong> Wireless Technology
MEETINGS & EVENTS<br />
CMOS RF Design<br />
November 16-18, 2011, Irv<strong>in</strong>g, TX<br />
RF Power Amplifier Techniques<br />
November 16-18, 2011, Irv<strong>in</strong>g, TX<br />
RF Transceiver Architecture, Design and Evaluation<br />
December 5-9, 2011, San Jose, CA<br />
RF and High Speed PC Board Design Fundamentals<br />
December 5-7, 2011, San Jose, CA<br />
Applied RF II: Advanced Wireless and <strong>Microwave</strong><br />
Techniques<br />
December 5-9, 2011, San Jose, CA<br />
Kimmel Gerke Associates, Ltd.<br />
628 LeVander Way<br />
S. St. Paul, MN 55075<br />
Tel: 888-EMI-GURU<br />
http://www.emiguru.com<br />
EMC / SI Sem<strong>in</strong>ars<br />
September 28-29, 2011, Portland, OR<br />
October 10-11, 2011, M<strong>in</strong>neapolis, MN<br />
October 13-14, 2011, Chicago, IL<br />
October 27-28, 2011, San Jose, CA<br />
November 7-8, 2011, Phoenix, AZ<br />
D.L.S. Electronic Systems, Inc.<br />
1250 Peterson Drive<br />
Wheel<strong>in</strong>g, IL 60090<br />
Tel: 847-537-6400<br />
http://www.dlsemc.com<br />
EMC by Your Design—An EMC Practical Applications<br />
Sem<strong>in</strong>ar and Workshop<br />
October 18-20, 2011, Northbrook, IL<br />
Georgia Institute of Technology, Professional Education<br />
PO Box 93686<br />
Atlanta, GA 30377-0686<br />
Tel: 404-385-3500<br />
http://www.pe.gatech.edu<br />
Radar Cross Section Reduction<br />
October 17-19, 2011, Atlanta, GA<br />
Pr<strong>in</strong>ciples of Modern Radar<br />
October 31-November 4, 2011, Atlanta, GA<br />
CALLS FOR PAPERS<br />
IEEE International <strong>Microwave</strong> Symposium<br />
Montreal, Canada<br />
Conference Dates: June 17-22, 2012<br />
Paper Submission Deadl<strong>in</strong>e: December 5, 2011<br />
Topics:<br />
Technical areas <strong>in</strong>clude the follow<strong>in</strong>g: <strong>Microwave</strong> Field<br />
and Circuit Techniques, <strong>in</strong>clud<strong>in</strong>g field analysis and<br />
guided waves, frequency-doma<strong>in</strong> EM analysis techniques,<br />
CAD algorithms and techniques, nonl<strong>in</strong>ear<br />
device model<strong>in</strong>g, and more; Active Components, <strong>in</strong>clud<strong>in</strong>g<br />
semiconductor devices and monolithic ICS, signal<br />
generation, frequency conversion and control, highpower<br />
amplifiers, and more; Passive Components,<br />
<strong>in</strong>clud<strong>in</strong>g transmission l<strong>in</strong>e elements, passive circuit<br />
elements, planar passive filters and multiplexers,<br />
MEMS components and technologies, and more;<br />
Systems and Applications, <strong>in</strong>clud<strong>in</strong>g microwave photonics,<br />
mixed mode and digital signal process<strong>in</strong>g circuits,<br />
<strong>in</strong>strumentation and measurement techniques,<br />
wireless and cellular communication systems, and<br />
more; and Emerg<strong>in</strong>g Technical Areas, <strong>in</strong>clud<strong>in</strong>g RF<br />
nanotechnology, wireless power transmission, <strong>in</strong>novative<br />
systems, and more.<br />
Information:<br />
Authors are <strong>in</strong>vited to submit technical papers describ<strong>in</strong>g<br />
orig<strong>in</strong>al work on radio-frequency, microwave, millimeter-wave,<br />
and terahertz (THz) theory and techniques.<br />
The deadl<strong>in</strong>e for submission is December 5,<br />
2011. Papers should be three pages <strong>in</strong> length (PDF format),<br />
and should not exceed two megabytes <strong>in</strong> file size.<br />
Hardcopy and email submissions will not be accepted.<br />
Please refer to the IMS2012 website (http://<br />
ims2012.mtt.org) for detailed <strong>in</strong>structions concern<strong>in</strong>g<br />
paper submission, as well as an expanded description of<br />
the technical areas. Authors must adhere to the format<br />
provided <strong>in</strong> the conference paper template available on<br />
the symposium’s website.<br />
WAMICON 2012—IEEE Wireless and <strong>Microwave</strong><br />
Technology Conference<br />
Cocoa Beach, FL<br />
Conference Dates: April 16-17, 2012<br />
Paper Submission Deadl<strong>in</strong>e: January 9, 2012<br />
Topics:<br />
Topics of <strong>in</strong>terest <strong>in</strong>clude, but are not limited to, the<br />
follow<strong>in</strong>g: Power Amplifiers, <strong>in</strong>clud<strong>in</strong>g high-efficiency<br />
PAs, novel PA architectures, high-power devices, PA<br />
applications, and more; Active Components and<br />
Systems, <strong>in</strong>clud<strong>in</strong>g transceiver design, system-onchip,<br />
low-power IC, RF/MMIC electronics, and more;<br />
Passive Components and Antennas, <strong>in</strong>clud<strong>in</strong>g filters,<br />
transmission l<strong>in</strong>e components, MEMS, advanced<br />
packag<strong>in</strong>g, antennas and arrays, and more; Wireless<br />
Communications, <strong>in</strong>clud<strong>in</strong>g cognitive radios, wireless<br />
network<strong>in</strong>g, 3G/4G, MIMO, and more; and Emerg<strong>in</strong>g<br />
RF and <strong>Microwave</strong> Technologies, <strong>in</strong>clud<strong>in</strong>g biomedical<br />
applications, wireless sens<strong>in</strong>g, energy harvest<strong>in</strong>g,<br />
wireless power transfer, and more.<br />
Information:<br />
Authors are asked to submit papers electronically, <strong>in</strong><br />
PDF format. In order to be considered for publication<br />
by the Technical Program Committee, a draft with a<br />
m<strong>in</strong>imum of 4 pages (maximum of 8 pages), clearly<br />
describ<strong>in</strong>g the concept and results must be submitted.<br />
The f<strong>in</strong>al manuscript will be requested only after the<br />
paper is accepted. The conference webpage<br />
(www.wamicon.org) has complete details of submission.<br />
Submissions will be evaluated for orig<strong>in</strong>ality, significance<br />
of the work, technical soundness, and <strong>in</strong>terest<br />
to a wide audience.<br />
10 High <strong>Frequency</strong> Electronics
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IN THE NEWS<br />
Bus<strong>in</strong>ess News<br />
Aeroflex Limited, a wholly owned subsidiary of<br />
Aeroflex Hold<strong>in</strong>g Corp., and Lancaster University<br />
announced the <strong>in</strong>auguration of the Aeroflex Wireless<br />
Broadband Laboratory <strong>in</strong> the University’s School of<br />
Comput<strong>in</strong>g and Communications at InfoLab21,<br />
Lancaster’s center for research <strong>in</strong> <strong>in</strong>formation and communication<br />
technologies. The new laboratory is equipped<br />
with $1.4 million worth of test equipment donated by<br />
Aeroflex.<br />
RFMW Europe announces the addition of a new office <strong>in</strong><br />
France. The new office allows RFMW France to <strong>in</strong>troduce<br />
the latest supplier technology to Europe’s rapidly grow<strong>in</strong>g<br />
market. In the past few months, RFMW Europe has<br />
opened offices <strong>in</strong> the UK, Germany, Italy and France to<br />
jo<strong>in</strong> with RFMW Israel <strong>in</strong> cover<strong>in</strong>g Europe, the Middle<br />
East and Africa (EMEA).<br />
SV <strong>Microwave</strong> is announces the sign<strong>in</strong>g of Mouser<br />
Electronics as its newest authorized distributor. Mouser<br />
Electronics is a fast-grow<strong>in</strong>g global catalog and onl<strong>in</strong>e<br />
semiconductor and electronic component distributor.<br />
Mouser is a welcomed addition to the SV <strong>Microwave</strong> sales<br />
team.<br />
L-com, Inc. has partnered with Bertek Import e Com.<br />
Ltda. from Vitoria, Brazil, a division of Stile Comercial, a<br />
trad<strong>in</strong>g company. The partnership allows L-com greater<br />
distribution of both wireless and wired products <strong>in</strong> Brazil.<br />
Agilent Technologies Inc. announced that it has<br />
<strong>in</strong>creased the company’s capability to provide on-site<br />
Z540.3 calibration services at locations from Canada to<br />
Brazil. In March 2010, the Roseville, Calif., service center<br />
became the first commercial calibration lab to be accredited<br />
by A2LA to ANSI/NSCL Z540.3-2006. S<strong>in</strong>ce then, 14<br />
Agilent service centers, many with mobile calibration<br />
teams, have all been accredited to Z540.3 by A2LA. These<br />
centers now offer Z540.3 calibration service for over 500<br />
models, up from 230 dur<strong>in</strong>g the same time period.<br />
ElectriPlast Corporation, a wholly owned subsidiary<br />
of Integral Technologies, Inc. and makers of the<br />
ElectriPlast l<strong>in</strong>e of electrically conductive res<strong>in</strong>s,<br />
announced that Th<strong>in</strong>k Wireless, Inc. has purchased<br />
next generation antenna components eng<strong>in</strong>eered from<br />
ElectriPlast conductive res<strong>in</strong>s for use <strong>in</strong> a new series of<br />
SiriusXM Satellite Radio receivers. The two companies<br />
will also work together to jo<strong>in</strong>tly develop future technologies<br />
<strong>in</strong>corporat<strong>in</strong>g ElectriPlast composites <strong>in</strong>to nextgeneration<br />
Th<strong>in</strong>k Wireless products and devices.<br />
National Instruments announced that it is donat<strong>in</strong>g<br />
design tools to the Massachusetts Institute of<br />
Technology (MIT) to help expand the use of NI software<br />
and hardware <strong>in</strong> the MIT Department of Mechanical<br />
Eng<strong>in</strong>eer<strong>in</strong>g via 10 mechatronics, robotics, manufactur<strong>in</strong>g,<br />
control and design courses over the next five years.<br />
The donation will <strong>in</strong>clude products such as the NI<br />
LabVIEW Control Design and Simulation Module, the NI<br />
LabVIEW MathScript RT Module, NI PXI <strong>in</strong>strumentation,<br />
NI CompactRIO and NI S<strong>in</strong>gle-Board RIO.<br />
OML, Inc. celebrates their 20th Anniversary s<strong>in</strong>ce startup<br />
<strong>in</strong> 1991 by offer<strong>in</strong>g an extended 3-year warranty on all<br />
millimeter wave products purchased between January 1,<br />
2011 and December 31, 2012. This promotion only applies<br />
to products purchased directly from OML, Inc. that satisfy<br />
our standard terms and conditions. This warranty<br />
reduces overall cost-of-ownership and demonstrates our<br />
commitment for manufactur<strong>in</strong>g both <strong>in</strong>novative and reliable<br />
millimeter wave measurement solutions.<br />
SGS Consumer Test<strong>in</strong>g Services is expand<strong>in</strong>g <strong>in</strong> the<br />
U.S. with the open<strong>in</strong>g of a new electrical and electronics<br />
lab <strong>in</strong> Atlanta dedicated exclusively to test<strong>in</strong>g and certify<strong>in</strong>g<br />
electrical and electronic (E&E) products. The new<br />
lab will evaluate the electromagnetic capability, battery<br />
and energy efficiency, and safety compliance of products<br />
<strong>in</strong> dozens of categories rang<strong>in</strong>g from medical devices and<br />
home electronics to office equipment, light<strong>in</strong>g products<br />
and laboratory equipment.<br />
Wireless Telecom Group has been awarded a 5-year<br />
supply agreement by Rob<strong>in</strong> Warner Air Force Base for<br />
Boonton 4542 high performance RF power analyzers.<br />
These RF power analyzers are used to service and ma<strong>in</strong>ta<strong>in</strong><br />
Radar and control systems for the Global Hawk<br />
unmanned aerial vehicle (UAV). Global Hawk UAVs are<br />
equipped with Synthetic-Aperture Radars (SAR) that can<br />
provide details of target areas with resolutions of less<br />
than 10 cm (4 <strong>in</strong>ch). SAR use relative motion between the<br />
Radar antenna and the target. This radar system repeatedly<br />
transmits high power pulses of various frequencies<br />
(“chirps”) to a target and receives multiple echo waveforms<br />
that are stored. Post-process<strong>in</strong>g of the received<br />
<strong>in</strong>formation creates images reveal<strong>in</strong>g the most subtle<br />
details.<br />
Ethertronics announced that its active antenna technology<br />
has been selected by MEPS Real-Time for its<br />
Intelliguard RFID Solutions for Critical Inventory. This<br />
selection is the latest example of Ethertronics’ ability to<br />
provide advanced RF and antenna system solutions<br />
where high performance and reliability are critical.<br />
mimoOn announced its collaboration with Texas<br />
Instruments Incorporated (TI) for 3GPP compliant<br />
LTE PHY software. TI will offer complete PHY software<br />
for LTE Release 8 and 9 for its KeyStone multicore architecture,<br />
with a specific focus on its newest TMS320TCI-<br />
6612 and TMS320TCI6614 System-on-Chips (SoCs).<br />
These SoCs are especially designed for small cell base<br />
stations <strong>in</strong> the enterprise, pico and metro markets.<br />
Mouser Electronics, Inc. is partner<strong>in</strong>g with Anaren,<br />
Inc. to stock its new family of FCC-, IC- and ETSI- compliant<br />
Integrated Radio (AIR) modules. Anaren’s AIR<br />
product family <strong>in</strong>corporates Texas Instruments low-<br />
12 High <strong>Frequency</strong> Electronics
4G 4 U<br />
Dual RF Mixer Needs Only 600mW<br />
Actual Size<br />
LTC5569 Total Solution Size:
IN THE NEWS<br />
power RF technology to offer a “plug and play” RF solution<br />
for electronic eng<strong>in</strong>eers challenged with add<strong>in</strong>g<br />
wireless capability to new or exist<strong>in</strong>g devices.<br />
Applications for AIR modules range from <strong>in</strong>dustrial control,<br />
build<strong>in</strong>g automation, and low-power sensor networks<br />
to light<strong>in</strong>g and equipment and appliances <strong>in</strong>tended<br />
for <strong>in</strong>clusion <strong>in</strong> smart-grid scenarios (e.g., automated<br />
smart meter<strong>in</strong>g).<br />
Ultra low power RF specialist Nordic Semiconductor<br />
ASA announces that the Compex Wireless, a wireless<br />
muscle electro-stimulator—as used by HTC-Highroad,<br />
the cycl<strong>in</strong>g team of top 2011 Tour de France spr<strong>in</strong>ter<br />
Mark Cavendish—employs Nordic nRF24LE1 proprietary<br />
2.4 GHz Systems-on-Chip (SoCs) and targets professional<br />
athletes and serious consumer sports and fitness<br />
enthusiasts such as marathon runners and keen<br />
cyclists. The Compex Wireless employs mechanical<br />
biofeedback (“mi-SCAN”) technology to automatically and<br />
safely adjust the stimulation sett<strong>in</strong>gs to the specificities<br />
of each muscle. Electro muscle stimulation has long been<br />
used by elite professional athletes both dur<strong>in</strong>g tra<strong>in</strong><strong>in</strong>g<br />
(to stress key target muscles) and between tra<strong>in</strong><strong>in</strong>g sessions<br />
and competitive events (to accelerate recovery<br />
cycles and treat common <strong>in</strong>tensive tra<strong>in</strong><strong>in</strong>g ailments such<br />
as lower back pa<strong>in</strong>). The Compex Wireless is the first electro-stimulator<br />
to the offer the convenience of wireless to<br />
maximize application freedom and comfort without the<br />
risk of users gett<strong>in</strong>g tangled up <strong>in</strong> trail<strong>in</strong>g cables.<br />
People <strong>in</strong> the News<br />
Modelithics, Inc. announces the addition of John Fisher<br />
as member of the Modelithics management<br />
team. Fisher has over 29 years of<br />
eng<strong>in</strong>eer<strong>in</strong>g and management experience,<br />
<strong>in</strong>clud<strong>in</strong>g extensive background<br />
<strong>in</strong> <strong>in</strong>ternational product development<br />
as well as <strong>in</strong> executive management<br />
roles. His experience <strong>in</strong> process and<br />
product management along with previous<br />
roles as Director of Eng<strong>in</strong>eer<strong>in</strong>g<br />
and VP of Sales and Market<strong>in</strong>g will be<br />
a valuable asset <strong>in</strong> Modelithics’ goals. Fisher earned a BS <strong>in</strong><br />
Electrical Eng<strong>in</strong>eer<strong>in</strong>g from the University of Central<br />
Florida along with a MS <strong>in</strong> Electrical Eng<strong>in</strong>eer<strong>in</strong>g and a<br />
MBA from the University of South Florida.<br />
Nujira announced the appo<strong>in</strong>tment of Patrick McNamee<br />
to the newly created post of VP of<br />
Silicon Operations with overall responsibility<br />
for tak<strong>in</strong>g its Envelope<br />
Track<strong>in</strong>g ICs from design completion to<br />
volume production. Patrick McNamee<br />
has over 25 years experience <strong>in</strong> the<br />
semiconductor <strong>in</strong>dustry <strong>in</strong>clud<strong>in</strong>g 15<br />
years senior management experience<br />
with successful fabless semiconductor<br />
companies such as Powervation,<br />
Cambridge Silicon Radio (CSR) and Dialog Semiconductor.<br />
Patrick McNamee jo<strong>in</strong>s Nujira from EoSemi, a UK based<br />
start-up with novel <strong>in</strong>tellectual property <strong>in</strong> the field of silicon<br />
timers. Prior to EoSemi, Patrick was VP of Operations<br />
at Powervation, a fabless digital power IC technology company.<br />
Prior to this, he spent seven years as VP of Product<br />
Eng<strong>in</strong>eer<strong>in</strong>g at Cambridge Silicon Radio and eight years as<br />
Product Eng<strong>in</strong>eer<strong>in</strong>g Manager at Dialog Semiconductor.<br />
Earlier <strong>in</strong> his career, Patrick held test and product development<br />
positions at senior eng<strong>in</strong>eer level with National<br />
Semiconductor and GEC Plessey. He is a Director and<br />
Board Member of the National Microelectronics Institute<br />
(NMI).<br />
Anatech Electronics appo<strong>in</strong>ted Dean Handr<strong>in</strong>os as director<br />
of U.S. sales, with the responsibility of develop<strong>in</strong>g new<br />
bus<strong>in</strong>ess and manag<strong>in</strong>g of the company’s<br />
sales activities throughout the<br />
country, <strong>in</strong>clud<strong>in</strong>g work<strong>in</strong>g with regional<br />
sales representatives. Mr. Handr<strong>in</strong>os<br />
comes to Anatech from Stealth<br />
<strong>Microwave</strong> (a division of Micronetics),<br />
where he was vice president and<br />
responsible for bus<strong>in</strong>ess development<br />
and technical sales of the company’s<br />
power amplifier products. He was previously<br />
sales and market<strong>in</strong>g manager for Stealth. Mr.<br />
Handr<strong>in</strong>os received his Bachelor of Eng<strong>in</strong>eer<strong>in</strong>g degree<br />
from Stevens Institute of Technology and is currently work<strong>in</strong>g<br />
toward his MBA degree from Lehigh University.<br />
AR RF/<strong>Microwave</strong> Instrumentation has announced<br />
that Jay Osselburn has jo<strong>in</strong>ed the<br />
company as a Senior Product-Eng<strong>in</strong>eer<br />
for the “A” Series of RF power amplifiers.<br />
These amplifiers offer coverage<br />
up to 400 MHz and power up to 16,000<br />
watts and beyond. Mr. Osselburn<br />
br<strong>in</strong>gs over 20 years of experience <strong>in</strong><br />
the RF <strong>in</strong>dustry to his new position at<br />
AR. His background <strong>in</strong>cludes design<strong>in</strong>g<br />
and develop<strong>in</strong>g RF amplifier and transmitter<br />
systems, as well as lead<strong>in</strong>g the teams of eng<strong>in</strong>eers<br />
work<strong>in</strong>g on these products. His most recent work was as a<br />
Senior Project Eng<strong>in</strong>eer at Innovation Eng<strong>in</strong>eer<strong>in</strong>g, Inc.,<br />
and throughout his career, he has worked at a variety of<br />
eng<strong>in</strong>eer<strong>in</strong>g companies creat<strong>in</strong>g products that have helped<br />
to move the RF <strong>in</strong>dustry forward.<br />
Giga-tronics Incorporated announces that Mr. Mark<br />
Elo jo<strong>in</strong>ed the Company as Vice President of Market<strong>in</strong>g<br />
effective August 29, 2011. Mr. Elo comes to Giga-tronics<br />
with more than 20 years of test and measurement experience<br />
<strong>in</strong> RF and microwave <strong>in</strong>strumentation. He has held<br />
various positions at Hewlett-Packard/Agilent Technologies<br />
and Keithley Instruments—<strong>in</strong>clud<strong>in</strong>g Product Market<strong>in</strong>g<br />
Manager, Market<strong>in</strong>g Director and Bus<strong>in</strong>ess Development<br />
Director—as well as number of R&D management roles.<br />
Mr. Elo will be responsible for the market<strong>in</strong>g of all Gigatronics<br />
products and for keep<strong>in</strong>g new <strong>in</strong>vestment programs<br />
aligned with their target markets.<br />
14 High <strong>Frequency</strong> Electronics
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HIGH FREQUENCY APPLICATIONS<br />
Research News<br />
The Massachusetts Institute of Technology has announced the creation of the MIT/MTL Center for Graphene<br />
Devices and Systems (MIT-CG—www-mtl.mit.edu/wpmu/graphene/). This <strong>in</strong>terdepartmental center, part of the<br />
Microsystems Technology Laboratories (MTL), br<strong>in</strong>gs together MIT researchers and <strong>in</strong>dustrial partners to advance the<br />
science and eng<strong>in</strong>eer<strong>in</strong>g of graphene-based technologies.<br />
Graphene, a form of pure carbon arranged <strong>in</strong> an hexagonal lattice just one atom thick, has generated great excitement<br />
among researchers worldwide for its unique properties that stand to revolutionize materials science and electronics.<br />
Until recently, most studies have focused on the basic physical properties of graphene. Work at the new Center<br />
will go beyond this research, explor<strong>in</strong>g advanced technologies and strategies that will lead to graphene-based materials,<br />
devices and systems for a variety of applications, <strong>in</strong>clud<strong>in</strong>g graphene-enabled systems for energy generation,<br />
smart fabrics and materials, radio-frequency communications, and sens<strong>in</strong>g, to name a few.<br />
Researchers at the International Center for Materials Nanoarchitectonics (MANA—www.nims.go.jp/<br />
mana/<strong>in</strong>dex.html) demonstrate for the first time the key features <strong>in</strong> the neuroscience and psychology of memory by a<br />
AgS 2<br />
synapse. Artificial neural networks have attracted attention as a means to a better understand<strong>in</strong>g of biological<br />
neural networks, as well as aid<strong>in</strong>g developments <strong>in</strong> artificial <strong>in</strong>telligence. The complex and <strong>in</strong>terconnected nature of<br />
thought processes make neural behavior difficult to reproduce <strong>in</strong> artificial structures without software programm<strong>in</strong>g.<br />
Now Takeo Ohno and researchers at the International Center for Materials Nanoarchitectonics (MANA), Tsukuba,<br />
Japan, and the University of California have mimicked synaptic activity with the electroionic behavior of a nanoscale<br />
AgS2 electrode.<br />
The researchers observed a temporary higher-conductance state <strong>in</strong> the AgS 2<br />
system follow<strong>in</strong>g an <strong>in</strong>cident electric<br />
pulse. Repetition of the <strong>in</strong>put pulse over two second <strong>in</strong>tervals led to permanently higher conductance. These two<br />
responses mimic the short-term plasticity and long-term potentiality <strong>in</strong> biological synapses. In the most widely accepted<br />
‘multistore’ model of memory <strong>in</strong> human psychology, new <strong>in</strong>formation is stored briefly as a sensory memory.<br />
Rehearsal converts short-term memory to long-term. When demonstrat<strong>in</strong>g memorization of the numerals ‘1’ and ‘2’ <strong>in</strong><br />
a 7 × 7 <strong>in</strong>organic synapse array, the behaviour of the artificial synapse <strong>in</strong>dicated ‘multistore’ memory rather than a<br />
conventional switch. The researchers add, “The data <strong>in</strong>dicate that we may apply a psychlogical memory model simultaneously<br />
with the emulation of biological synaptic-like behaviour.”<br />
Mitsuteru Inoue and colleagues at Toyohashi University of Technology (Toyohashi Tech—www.tut.ac.jp/english/)<br />
have developed high sensitivity magnetic sensors us<strong>in</strong>g magnonic crystals—artificial magnetic crystal structures<br />
capable of controll<strong>in</strong>g the propagation of magnetostatic waves. Magnonic crystals support the propagation of magnetostatic<br />
waves through the crystal sp<strong>in</strong> system or suppress the propagation of waves due to the periodicity of the crystal<br />
structure.<br />
In this research the Toyohashi Tech researchers fabricated magnonic crystals by the direct formation of one-dimensional<br />
arrays of metal strips on yttrium iron garnet (YIG)—a ferromagnetic material widely used <strong>in</strong> the magneto-electronics<br />
<strong>in</strong>dustry—which serves as the propagation medium. The metal stripes <strong>in</strong>duce an attenuation band <strong>in</strong> the frequency<br />
spectra of the magnonic crystal and restrict the propagation of waves of specific frequencies. Even at room temperature,<br />
the output signal of the devices—frequency of the attenuation band—is very sensitive to external magnetic<br />
fields applied to the YIG crystal, where a one Oersted change <strong>in</strong> the field causes a 2.6 MHz shift <strong>in</strong> the attenuation<br />
band gap. Importantly, the maximum detection sensitivity of the magnonic crystals is more than 10 times greater that<br />
of giant magneto-impedance devices. Next the researchers are plann<strong>in</strong>g to demonstrate the measurement of magnetic<br />
fields <strong>in</strong> three dimensions.<br />
A Theory Unify<strong>in</strong>g Gravity and Electromagnetism, the two long range forces of nature, has been presented by Dr.<br />
John Brandenburg, a plasma physicist at a Symposium on Str<strong>in</strong>g Theory Phenomenology at the University of<br />
Wiscons<strong>in</strong> (www.wisc.edu) <strong>in</strong> Madison Wiscons<strong>in</strong>. This new unified field theory yields a highly accurate formula of<br />
one of the most important physical constants <strong>in</strong> the Cosmos: The Newton Gravitation constant G. The unification theory,<br />
called simply the GEM theory, from the words Gravity Electro-Magnetism, completes the quest of E<strong>in</strong>ste<strong>in</strong>, who<br />
labored until his death to unify gravity and electro-magnetism. The theory l<strong>in</strong>ks gravity to an effect widely known <strong>in</strong><br />
plasma physics called the “E × B drift” which effects all particles the same, and is similar to the radiation pressure<br />
exerted by light. Among the predictions of the GEM theory is that gravity can be modified directly by strong electromagnetic<br />
fields, lead<strong>in</strong>g to anti-gravity technologies, and that even wormholes for warp drive may someday be created<br />
electro-magnetically. A description of the theory has also been published <strong>in</strong> the Journal of Cosmology. The theory is<br />
expected to undergo extensive analysis and review <strong>in</strong> the scientific community.<br />
16 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
FREQUENCY SYNTHESIZERS<br />
<strong>Implement<strong>in</strong>g</strong> <strong>Modulation</strong><br />
<strong>Functions</strong> <strong>in</strong> <strong>Microwave</strong><br />
<strong>Frequency</strong> Synthesizers<br />
By Alexander Chenak<strong>in</strong><br />
Phase Matrix, Inc.<br />
The ma<strong>in</strong> function<br />
This article reviews the of a frequency synthesizer<br />
is to deliv-<br />
typical methods for implement<strong>in</strong>g<br />
modulation with<strong>in</strong> er a stable and clean signal.<br />
However, many<br />
a frequency synthesizer<br />
<strong>in</strong>strument or system applications require not<br />
only a fixed frequency<br />
signal but also various modulation functions<br />
rang<strong>in</strong>g from simple pulse, amplitude, frequency<br />
and phase modulation to complex digital<br />
modulation formats. Although modulators<br />
are usually realized as external devices,<br />
they can also be <strong>in</strong>corporated <strong>in</strong>to a frequency<br />
synthesizer core. Inside any synthesizer<br />
there are many circuits that can carry multiple<br />
functions and be reused to <strong>in</strong>crease the<br />
functionality without a significant <strong>in</strong>crease <strong>in</strong><br />
cost. This results <strong>in</strong> a more cost efficient and<br />
versatile design. The most commonly used<br />
modulation schemes are briefly reviewed <strong>in</strong><br />
this article. Further details on modulation<br />
theory and implementation techniques can be<br />
found <strong>in</strong> [1-7].<br />
Figure 1 · Pulse modulation is implemented<br />
by <strong>in</strong>sert<strong>in</strong>g a switch <strong>in</strong>to the synthesizer output<br />
path.<br />
Pulse <strong>Modulation</strong><br />
Pulse modulation is probably the simplest<br />
modulation form. It is achieved by switch<strong>in</strong>g<br />
the output signal on and off <strong>in</strong> accordance with<br />
the applied modulat<strong>in</strong>g pulses. The result is a<br />
sequence of RF pulses that replicate (or tend to<br />
replicate) the <strong>in</strong>put modulat<strong>in</strong>g signal. The<br />
m<strong>in</strong>imum RF pulse width, rise time, fall time<br />
and overshoot are important characteristics<br />
that def<strong>in</strong>e how well the modulat<strong>in</strong>g signal is<br />
replicated. Typical rise time and fall time numbers<br />
required are <strong>in</strong> the order of 10 nanoseconds.<br />
Pulse modulation on/off ratio is another<br />
critical parameter. A typical specification is<br />
80 dB or higher. The modulat<strong>in</strong>g signal frequency<br />
(also called rate) can be between DC<br />
and several megahertz. Pulse modulation is<br />
practically implemented by <strong>in</strong>sert<strong>in</strong>g a switch<br />
(or a cha<strong>in</strong> of switches for a higher on/off ratio)<br />
<strong>in</strong>to the synthesizer output path as depicted <strong>in</strong><br />
Figure 1. The switch can be built us<strong>in</strong>g PIN-<br />
Figure 2 · A pulse modulator is <strong>in</strong>tegrated<br />
<strong>in</strong>to a switched filter bank.<br />
20 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
FREQUENCY SYNTHESIZERS<br />
diodes or FET devices that support<br />
nanosecond switch<strong>in</strong>g. A high-pass<br />
filter follows the switch to suppress<br />
the leakage of the modulat<strong>in</strong>g<br />
signal (called video feedthrough)<br />
to the synthesizer output.<br />
Alternatively, the pulse modulator<br />
can be conveniently comb<strong>in</strong>ed<br />
with a switched filter bank<br />
used for harmonic (or subharmonic)<br />
rejection. The idea is to reduce<br />
the design complexity and cost by<br />
utiliz<strong>in</strong>g the same devices for<br />
both functions. Furthermore, no<br />
additional loss is <strong>in</strong>troduced that<br />
eases requirements for the output<br />
power amplifier. In this case, the<br />
pulse modulator <strong>in</strong>corporates a<br />
digital decoder (as shown <strong>in</strong> Fig.<br />
2) to control the switches <strong>in</strong> such<br />
a manner that they will provide<br />
the highest possible isolation<br />
(on/off ratio) for any given frequency<br />
subband.<br />
Amplitude <strong>Modulation</strong><br />
Amplitude modulation (AM)<br />
historically has been one of the<br />
most popular methods for carry<strong>in</strong>g<br />
<strong>in</strong>formation via RF frequencies. It<br />
is realized by vary<strong>in</strong>g the output<br />
signal amplitude <strong>in</strong> accordance<br />
with an applied modulat<strong>in</strong>g signal.<br />
The simplest way to implement<br />
AM is to control the <strong>in</strong>sertion loss<br />
of an attenuator <strong>in</strong>serted <strong>in</strong>to the<br />
synthesizer output circuit as<br />
depicted <strong>in</strong> Figure 3. This can be<br />
naturally comb<strong>in</strong>ed with an openloop<br />
amplitude control as depicted<br />
<strong>in</strong> Figure 4. The synthesizer is first<br />
commanded to set a desired output<br />
power level by programm<strong>in</strong>g DAC<br />
(digital-to-analog converter) voltage.<br />
Then a modulat<strong>in</strong>g voltage is<br />
applied over the DAC voltage to<br />
vary the output signal around its<br />
nom<strong>in</strong>al value. Naturally, the output<br />
power cannot be set at its<br />
highest (or lowest) level because<br />
certa<strong>in</strong> headroom is needed to<br />
allow further power changes. The<br />
maximum power variation (which<br />
can also be expressed <strong>in</strong> terms of<br />
modulation <strong>in</strong>dex or depth) is<br />
achieved by sett<strong>in</strong>g the output<br />
power level <strong>in</strong> the middle of its<br />
control range. Another important<br />
requirement is l<strong>in</strong>earity because<br />
the modulator must translate the<br />
modulat<strong>in</strong>g signal with m<strong>in</strong>imal<br />
distortion. This may further limit a<br />
realizable modulation depth.<br />
Various l<strong>in</strong>earization techniques<br />
can be applied to m<strong>in</strong>imize AM signal<br />
distortion. In some cases, it is<br />
desirable to implement not a l<strong>in</strong>ear<br />
but a logarithmic modulat<strong>in</strong>g<br />
scale, mean<strong>in</strong>g that the output<br />
power changes <strong>in</strong> dB per volt. This<br />
mode is utilized for large power<br />
variations (e.g., for simulation of<br />
rotat<strong>in</strong>g antenna patterns) and is<br />
called deep AM.<br />
Alternatively, amplitude modulation<br />
can be implemented by<br />
summ<strong>in</strong>g the modulat<strong>in</strong>g signal<br />
<strong>in</strong>to the ALC (automatic level control)<br />
loop as shown <strong>in</strong> Figure 5. In<br />
general, the ALC-based amplitude<br />
modulation offers better l<strong>in</strong>earity<br />
and repeatability characteristics.<br />
However, the modulation<br />
depth may be limited by the available<br />
ALC dynamic range, which,<br />
<strong>in</strong> turn, depends on the utilized<br />
detector. The maximum modulat<strong>in</strong>g<br />
signal rate is also lower compared<br />
to the open-loop alternative<br />
because of the settl<strong>in</strong>g time of the<br />
closed-loop ALC system.<br />
<strong>Frequency</strong> and Phase<br />
<strong>Modulation</strong><br />
<strong>Frequency</strong> modulation (FM) is<br />
another popular form of analog<br />
modulation that offers better signal<br />
immunity compared to AM.<br />
The process of produc<strong>in</strong>g a frequency-modulated<br />
signal <strong>in</strong>volves<br />
the variation of the synthesizer<br />
output frequency <strong>in</strong> accordance<br />
with the modulat<strong>in</strong>g signal. The<br />
frequency bandwidth where the<br />
synthesized signal fluctuates is<br />
proportional to the peak amplitude<br />
of the modulat<strong>in</strong>g signal and<br />
is called frequency deviation. FM<br />
Figure 3 · Amplitude modulation is realized<br />
us<strong>in</strong>g a voltage-controlled attenuator.<br />
Figure 4 · Amplitude modulation is comb<strong>in</strong>ed<br />
with an open-loop amplitude control.<br />
Figure 5 · Amplitude modulation can be<br />
realized by summ<strong>in</strong>g the modulat<strong>in</strong>g signal<br />
<strong>in</strong>to the ALC loop.<br />
22 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
FREQUENCY SYNTHESIZERS<br />
Figure 6 · <strong>Frequency</strong> and phase<br />
modulation.<br />
Figure 7 · <strong>Frequency</strong> modulation is<br />
realized by modulat<strong>in</strong>g the VCO tun<strong>in</strong>g<br />
voltage.<br />
Figure 8 · A modulat<strong>in</strong>g signal is<br />
applied to the reference oscillator.<br />
can also be described by modulation<br />
<strong>in</strong>dex, which is the ratio of the maximum<br />
frequency deviation to the frequency<br />
of the modulat<strong>in</strong>g signal.<br />
Note that we can vary not only the<br />
frequency but also the phase of the<br />
synthesized signal, thus produc<strong>in</strong>g<br />
phase modulation (PM). Both processes<br />
are quite similar because <strong>in</strong> both<br />
cases we vary the argument (the<br />
angle) of the same s<strong>in</strong>e function as<br />
illustrated <strong>in</strong> Figure 6. Hence, the<br />
angular modulation is a more general<br />
case that represents both FM and PM.<br />
The difference is not <strong>in</strong> the output signal<br />
waveform but rather <strong>in</strong> the modulator<br />
circuit configuration; that is,<br />
what parameter (frequency or phase)<br />
is directly proportional to the amplitude<br />
of the modulat<strong>in</strong>g signal. Because<br />
the <strong>in</strong>stantaneous angular frequency<br />
is mathematically the time derivative<br />
Figure 9 · A phase shifter provides a<br />
phase modulation function.<br />
Figure 10 · <strong>Frequency</strong> modulation is<br />
realized by controll<strong>in</strong>g the DDS output<br />
frequency.<br />
of the phase, it is possible to convert<br />
FM to PM (and vise versa) by add<strong>in</strong>g<br />
an <strong>in</strong>tegrator (or differentiator) circuit<br />
<strong>in</strong>to the modulat<strong>in</strong>g signal path.<br />
How can we modulate the synthesizer<br />
output frequency? From first<br />
glance, it is quite straightforward—we<br />
can simply modulate (i.e., change) the<br />
VCO (voltage-controlled oscillator)<br />
tun<strong>in</strong>g voltage around the value where<br />
it is settled. The problem, however, is<br />
that the synthesizer’s PLL (phaselock-loop)<br />
core will tend to correct any<br />
voltage change we <strong>in</strong>troduce. Most<br />
likely, we will lose this battle unless we<br />
change the tun<strong>in</strong>g voltage so fast that<br />
the PLL will not be able to react to the<br />
change. This is exactly the idea that<br />
stands beh<strong>in</strong>d a so-called wideband<br />
FM modulation mode. The FM modulator<br />
is built by add<strong>in</strong>g a circuit (e.g.,<br />
an operational amplifier) that sums an<br />
external modulat<strong>in</strong>g signal with the<br />
control voltage delivered by PLL as<br />
depicted <strong>in</strong> Figure 7. The PLL rema<strong>in</strong>s<br />
locked all the time, thus ensur<strong>in</strong>g that<br />
the overage output frequency<br />
rema<strong>in</strong>s correct. For proper operation,<br />
the modulat<strong>in</strong>g signal rate<br />
has to be well above the loop filter<br />
bandwidth. Thus, the PLL filter<br />
bandwidth is adjusted (narrowed<br />
down) to allow lower modulat<strong>in</strong>g<br />
rates. As a result, the phase noise<br />
usually <strong>in</strong>creases when FM is<br />
enabled. Typical achievable modulat<strong>in</strong>g<br />
rates range from a few<br />
kilohertz to tens of megahertz.<br />
What if we need to apply a<br />
lower-frequency modulat<strong>in</strong>g signal?<br />
Obviously, we have to further<br />
decrease the loop filter<br />
bandwidth, which may not<br />
always be possible because of<br />
prohibitory high VCO free-runn<strong>in</strong>g<br />
phase noise at low frequency<br />
offsets. An alternative solution<br />
is to modulate not the VCO but<br />
the reference oscillator as shown<br />
<strong>in</strong> Figure 8. If the modulat<strong>in</strong>g<br />
signal rate is sufficiently low, the<br />
PLL will track the reference frequency<br />
change and, hence, translate<br />
the modulation to the VCO<br />
output. This mode is often called narrowband<br />
FM because the modulat<strong>in</strong>g<br />
frequency must be with<strong>in</strong> PLL filter<br />
bandwidth. The loop filter bandwidth<br />
should be set as wide as possible to<br />
allow higher modulat<strong>in</strong>g rates.<br />
Typical rates start from nearly DC to<br />
a few tens of kilohertz. Thus, the narrowband<br />
mode complements its wideband<br />
counterpart to extend the overall<br />
modulat<strong>in</strong>g frequency range.<br />
A disadvantage of this technique<br />
is low achievable deviation caused by<br />
very low tun<strong>in</strong>g sensitivity of the reference<br />
oscillator. Although the reference<br />
frequency deviation is multiplied<br />
up by the PLL at the 20logN rate, the<br />
synthesizer output deviation may be<br />
<strong>in</strong>sufficient. A higher deviation can be<br />
achieved by chang<strong>in</strong>g not the reference<br />
frequency but rather its phase as<br />
depicted <strong>in</strong> Figure 9. This represents<br />
a classical phase modulation; however,<br />
both forms are <strong>in</strong>terchangeable.<br />
Practical implementation requires a<br />
phase shifter that can be purchased<br />
24 High <strong>Frequency</strong> Electronics
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IF/RF MICROWAVE COMPONENTS<br />
359 rev S
High <strong>Frequency</strong> Design<br />
FREQUENCY SYNTHESIZERS<br />
Figure 11 · A signal is presented as<br />
a vector on a polar diagram.<br />
or can be built us<strong>in</strong>g discrete devices<br />
such as varactor diodes.<br />
An <strong>in</strong>terest<strong>in</strong>g solution is to control<br />
the division ratio of a frequency<br />
divider <strong>in</strong>serted <strong>in</strong>to either the PLL<br />
reference or feedback path as illustrated<br />
<strong>in</strong> Figure 10. The divider has<br />
to be a high-resolution device such as<br />
a fractional-N divider or DDS (direct<br />
digital synthesizer). The modulat<strong>in</strong>g<br />
signal is first digitized by an ADC<br />
(analog-to-digital converter) and then<br />
is summed with the DDS tun<strong>in</strong>g<br />
word to vary the DDS’s output frequency.<br />
Because the DDS offers<br />
exceptionally small frequency <strong>in</strong>crements<br />
and a fast update rate, a simple<br />
yet high-performance FM (or PM)<br />
modulator can be constructed.<br />
Complex <strong>Modulation</strong><br />
More effective modulation formats<br />
are possible by simultaneously vary<strong>in</strong>g<br />
both amplitude and phase. The<br />
simplest way to visualize such a complex<br />
signal is to draw it as a vector on<br />
a polar diagram. The amplitude and<br />
phase are represented as the length<br />
and the angle of the vector as shown<br />
<strong>in</strong> Figure 11. In digital communication<br />
systems, such a signal is expressed <strong>in</strong><br />
I (<strong>in</strong>-phase) and Q (quadrature) terms,<br />
which are projections of the signal vector<br />
on a correspond<strong>in</strong>g orthogonal<br />
axis. Therefore, the amplitude and<br />
phase modulation assumes the change<br />
of the signal vector, which can be conveniently<br />
accomplished by vary<strong>in</strong>g<br />
two <strong>in</strong>dependent IQ-components.<br />
Figure 12 · IQ-modulator block<br />
diagram.<br />
Hence, such a complex modulation is<br />
called vector or IQ-modulation.<br />
Vector modulation can be applied<br />
directly at RF frequencies by utiliz<strong>in</strong>g<br />
an IQ-modulator. It consists of two<br />
identical mixers driven with a 90-<br />
degree phase shift at their LO (local<br />
oscillator) ports as shown <strong>in</strong> Figure 12.<br />
The base-band data signals are<br />
applied directly to the mixer IF (<strong>in</strong>termediate<br />
frequency) ports, upconverted,<br />
and summed together with no phase<br />
shift between them. The result<strong>in</strong>g output<br />
is an IQ-modulated signal at the<br />
same carrier frequency as the LO. The<br />
quality of the synthesized signal can<br />
be tested by apply<strong>in</strong>g two base-band<br />
signals of the same frequency and<br />
amplitude with a 90-degree phase<br />
shift with respect to each other. For a<br />
perfect modulator, only one sideband<br />
should be present. However, <strong>in</strong> reality,<br />
the output signal conta<strong>in</strong>s another<br />
sideband because of imperfect amplitude<br />
and phase balance. For example,<br />
equaliz<strong>in</strong>g the signal paths with<strong>in</strong> 1<br />
dB (amplitude) and 10 degrees (phase)<br />
results <strong>in</strong> approximately a 20-dB sideband<br />
rejection. Naturally, better rejection<br />
is required. Moreover, an LO leakage<br />
also takes place. The undesired<br />
sideband can be further suppressed by<br />
adjust<strong>in</strong>g the amplitude and phase of<br />
the applied IQ signals. The LO leakage<br />
can be controlled by adjust<strong>in</strong>g DC offset<br />
voltages for the diodes used <strong>in</strong> the<br />
balanced mixers. Therefore, it is generally<br />
possible to calibrate the modulator<br />
characteristics to a degree where it can<br />
be practically utilized. The difficulty is<br />
that this calibration has to be implemented<br />
at many frequencies across the<br />
entire operat<strong>in</strong>g range. Moreover, the<br />
calibration has to survive over time<br />
and temperature changes. Thus,<br />
achiev<strong>in</strong>g a good image and LO leakage<br />
suppression for a broadband, highfrequency,<br />
direct IQ-modulator is a<br />
very challeng<strong>in</strong>g task.<br />
An alternative solution is to create<br />
a desired IQ-modulated signal at a<br />
lower, fixed frequency and then<br />
upconvert it to microwave frequencies<br />
as illustrated <strong>in</strong> Figure 13. Obviously,<br />
it is much easier to achieve better<br />
cancellation of undesired products at<br />
a s<strong>in</strong>gle (and lower frequency) po<strong>in</strong>t.<br />
However, the difficulty now moves to<br />
the upconversion side. We still need to<br />
remove the undesired sideband and<br />
LO leakage posted by the second (regular)<br />
mixer. However, because the<br />
product separation is much larger<br />
(compared to the direct IQ-modulation),<br />
a hardware filter can be used.<br />
For a broadband operation, a YIGtuned<br />
filter is a simple and effective<br />
solution. The disadvantage of the YIG<br />
filter is slow tun<strong>in</strong>g speed and relatively<br />
narrow pass-band that can be<br />
<strong>in</strong>sufficient <strong>in</strong> certa<strong>in</strong> applications. A<br />
switched filter bank (Fig. 14) offers<br />
better characteristics. However, it<br />
requires a larger number of channels<br />
(compared to devices used for harmonic<br />
and sub-harmonic filter<strong>in</strong>g)<br />
and, hence, is hardware extensive.<br />
This results <strong>in</strong> a more complex system<br />
design and posts other challenges<br />
(e.g., achiev<strong>in</strong>g high isolation between<br />
filter channels, etc.).<br />
In the past, complex microwave<br />
assemblies were often built us<strong>in</strong>g<br />
<strong>in</strong>dividual connectorized modules<br />
connected with coaxial cables. The<br />
designer could easily isolate and<br />
ref<strong>in</strong>e <strong>in</strong>dividual blocks to make them<br />
perfect. These days, such assemblies<br />
have to be made on a common PCB<br />
us<strong>in</strong>g t<strong>in</strong>y surface-mount parts. A<br />
great effort is required to m<strong>in</strong>imize<br />
<strong>in</strong>teractions between <strong>in</strong>dividual components<br />
sitt<strong>in</strong>g on the same board.<br />
Furthermore, many parts are reused<br />
26 High <strong>Frequency</strong> Electronics
Figure 13 · Upconversion us<strong>in</strong>g a tunable filter.<br />
“If what you want is<br />
RF Power, high performance,<br />
reliability, and customization,<br />
then we are a No Bra<strong>in</strong>er”<br />
Figure 14 · A broadband upconverter based on a<br />
switched filter bank.<br />
to accomplish different functions, which are distributed<br />
through the whole assembly. The net result is a significant<br />
<strong>in</strong>crease <strong>in</strong> “design density,” mean<strong>in</strong>g both component<br />
count and functionality per square <strong>in</strong>ch. All these factors<br />
drastically complicate the design process. Nevertheless,<br />
this seems to be a “must” approach these days.<br />
References<br />
1. Manassewitsch, V., <strong>Frequency</strong> Synthesizers: Theory<br />
and Design, 3rd ed., NJ: Wiley, 2005.<br />
2. Gardner, F. M., Phaselock Techniques, 3rd ed., NJ:<br />
Wiley, 2005.<br />
3. Crawford, J. A., Advanced Phase-Lock Techniques,<br />
MA: Artech House, 2008.<br />
4. Coombs, C. F., Jr., (ed.), Electronic Instrument<br />
Handbook, 3rd ed., New York: McGraw-Hill, 1999.<br />
5. Terman, F. E., Electronic and Radio Eng<strong>in</strong>eer<strong>in</strong>g,<br />
New York: McGraw-Hill, 1955.<br />
6. Gentile, K., “Fundamentals of Digital Quadrature<br />
<strong>Modulation</strong>,” RF Design, February 2003, pp. 40-47.<br />
7. Chenak<strong>in</strong>, A., <strong>Frequency</strong> Synthesizers: Concept to<br />
Product, Norwood, MA: Artech House, 2010.<br />
Author Information<br />
Dr. Alexander Chenak<strong>in</strong> is the vice president of the<br />
Signal Sources Group at Phase Matrix, Inc., where he oversees<br />
the development of advanced frequency synthesizer<br />
products for test-and-measurement applications. His professional<br />
achievements have been widely presented <strong>in</strong> trade<br />
publications and <strong>in</strong>ternational conferences. Dr. Chenak<strong>in</strong><br />
can be reached by phone at 408-954-6409 or by e-mail at<br />
achenak<strong>in</strong>@ phasematrix.com.<br />
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High <strong>Frequency</strong> Products<br />
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28 High <strong>Frequency</strong> Electronics
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Amplifier Technology Ltd. has developed a new range of<br />
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30 High <strong>Frequency</strong> Electronics
QUALITY, PERFORMANCE AND RELIABILITY<br />
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IEEE Wireless and <strong>Microwave</strong> Technology Conference<br />
WAMICON 2012<br />
Hilton Cocoa Beach FL<br />
April 16 & 17 2012<br />
www.wamicon.org<br />
General Chair<br />
Xun Gong, University of Central Florida<br />
xun.gong@ucf.edu<br />
General Vice-Chair<br />
Joel Johnson, Harris<br />
wjohns19@harris.com<br />
Technical Program Co-Chairs<br />
J<strong>in</strong>g Wang, University of South Florida<br />
j<strong>in</strong>gw@usf.edu<br />
Changzhi Li, Texas Tech. University<br />
changzhi.li@ttu.edu<br />
Tutorials Chair<br />
Ray Pengelly, Cree Inc.<br />
ray_pengelly@cree.com<br />
Invited Papers Co-Chairs<br />
Mohamed Sayed, MMS<br />
mmsayed@sbcglobal.net<br />
Jenshan L<strong>in</strong>, University of Florida<br />
jenshan@ieee.org<br />
Juan-Mari Collantes, University of the Basque Country<br />
juanmari.collantes@ehu.es<br />
F<strong>in</strong>ance Chair<br />
Heather Qu<strong>in</strong>ones, ATK<br />
heather.qu<strong>in</strong>ones@atk.com<br />
Local Arrangements Chair<br />
Lester Lopez, Harris<br />
llopez04@harris.com<br />
Exhibits & Sponsorship Co-Chairs<br />
Ryan Baker, Cree<br />
ryan_baker@cree.com<br />
Scott Maynard, AWR<br />
smaynard@awrcorp.com<br />
Publicity Chair<br />
Michael Hallman, <strong>Microwave</strong> Journal<br />
mhallman@mwjournal.com<br />
Publications Chair<br />
Gary Breed, High <strong>Frequency</strong> Electronics<br />
gary@highfrequencyelectronics.com<br />
Poster Session Chair<br />
Kamran Entesari, Texas A&M University<br />
kentesar@mail.ece.tamu.edu<br />
Registration Chair<br />
Gokhan Mumcu, University of South Florida<br />
mumcu@usf.edu<br />
Website Chair<br />
Kim McPeek, Trak <strong>Microwave</strong><br />
kmcpeek@trak.com<br />
Awards Chair<br />
Richard Abrahams, Harris<br />
rabrah01@harris.com<br />
Paper Competition Chair<br />
Jane Gu, University of Florida<br />
qgu@ece.ufl.edu<br />
IEEE Liaisons<br />
Jenshan L<strong>in</strong>, University of Florida<br />
jenshan@ieee.org<br />
WAMICON Advisors<br />
Larry Dunleavy, University of South Florida<br />
ldunleavy@modelithics.com<br />
Tom Weller, University of South Florida<br />
weller@usf.edu<br />
Submission Deadl<strong>in</strong>e Jan 9, 2012<br />
The 13 th annual IEEE Wireless and <strong>Microwave</strong> Technology Conference<br />
(WAMICON 2012) will be held <strong>in</strong> the beautiful Cocoa Beach area <strong>in</strong> Florida. The<br />
conference will address up-to-date multidiscipl<strong>in</strong>ary research needs and<br />
<strong>in</strong>terdiscipl<strong>in</strong>ary aspects of wireless and RF technology. The program <strong>in</strong>cludes oral<br />
presentations, poster presentations, workshops, and tutorials. Prospective authors are<br />
<strong>in</strong>vited to submit orig<strong>in</strong>al and high-quality work for presentation at the WAMICON<br />
and for publication <strong>in</strong> IEEEXplore. The technical program will cover wireless<br />
communication systems and RF technologies.<br />
Topics of Interest Include:<br />
Power Amplifiers (PAs)<br />
High-Efficiency PAs, L<strong>in</strong>earization and Efficiency Enhancement Techniques and<br />
Topologies, Novel PA Architectures, High-Power Devices, L<strong>in</strong>ear and Nonl<strong>in</strong>ear<br />
Device Model<strong>in</strong>g and CAD, Thermal Considerations and Reliabilities, PA<br />
Applications<br />
Active Components and Systems<br />
Transceiver Design, Multi-Band RF Circuits and Systems, System-On-Chip,<br />
System-In-Package, Low-Power IC, Low-Noise IC, Radar RF/MMIC Electronics,<br />
Terahertz Electronics, Active (Non-Foster) Filters and Non-Foster Impedance<br />
Match<strong>in</strong>g<br />
Passive Components and Antennas<br />
Filters, Transmission L<strong>in</strong>e Components, MEMS, Advanced Packag<strong>in</strong>g, Antennas<br />
and Arrays, Meta-Materials, Electromagnetic Bandgap Structures<br />
Wireless Communications<br />
Cognitive Radios, Wireless Network<strong>in</strong>g, 3G/4G, Ultra-Wideband (UWB), MIMO,<br />
Multi-Carrier, Spread Spectrum, Channel Characterization and Model<strong>in</strong>g,<br />
Software Def<strong>in</strong>ed Radios (SDR)<br />
Emerg<strong>in</strong>g RF and <strong>Microwave</strong> Technologies<br />
Biomedical Applications, Wireless Sens<strong>in</strong>g, Energy Harvest<strong>in</strong>g, Wireless Power<br />
Transfer, Nano Devices and Circuits<br />
Paper Submission Instructions<br />
Authors are asked to submit papers electronically, <strong>in</strong> pdf format. In order to be<br />
considered for publication by the Technical Program Committee, a m<strong>in</strong>imum of 4<br />
pages (maximum of 8 pages), clearly describ<strong>in</strong>g the concept and results must be<br />
submitted. The f<strong>in</strong>al manuscript will be requested only after the paper is accepted. The<br />
conference webpage at www.wamicon.org has complete details of submission.<br />
Submissions will be evaluated for orig<strong>in</strong>ality, significance of the work, technical<br />
soundness, and <strong>in</strong>terest to a wide audience.<br />
Important Dates<br />
Papers Due: Jan. 9, 2012<br />
Author Notification: Jan. 30, 2012<br />
F<strong>in</strong>al Papers Due: Feb. 13, 2012
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CIRCUIT ENVELOPE<br />
Circuit Envelope Simulation:<br />
A Powerful Resource for<br />
4G Power Amplifier Design<br />
By Josh Moore<br />
AWR Corporation<br />
This issue’s cover features<br />
AWR’s circuit envelope<br />
simulation, which allows<br />
desg<strong>in</strong>ers to analyze how<br />
circuit design choices<br />
affect performance with<br />
modulated signals<br />
Designers of RF<br />
power amplifiers<br />
for 3G and 4G<br />
wireless systems face<br />
conflict<strong>in</strong>g challenges<br />
unlike those they have<br />
encountered before. For<br />
example, while today’s<br />
higher-order modulation<br />
schemes require exceptional l<strong>in</strong>earity<br />
throughout both transmit and receive signal<br />
paths, wireless carriers require the highest<br />
possible efficiency at the system level.<br />
Optimiz<strong>in</strong>g a circuit for one parameter <strong>in</strong>variably<br />
requires sacrific<strong>in</strong>g performance of the<br />
other. Comb<strong>in</strong>e this and other unavoidable<br />
design conflicts with demands for greater<br />
<strong>in</strong>stantaneous bandwidth and designers<br />
<strong>in</strong>deed have a conundrum. Achiev<strong>in</strong>g acceptable<br />
solutions requires not just standard timedoma<strong>in</strong><br />
and frequency-doma<strong>in</strong> simulators but<br />
the unique contributions of circuit envelope<br />
simulation as well. This tool is seamlessly<br />
<strong>in</strong>tegrated with<strong>in</strong> AWR 2011, and together<br />
with <strong>Microwave</strong> Office and Visual System<br />
Simulator (VSS) software, it can shave time<br />
from the design process while produc<strong>in</strong>g highperformance,<br />
manufacturable products.<br />
The appeal of circuit envelope simulation<br />
results from its ability to more efficiently simulate<br />
complex digital waveforms than can<br />
time-doma<strong>in</strong> and frequency-doma<strong>in</strong> simulators<br />
such as harmonic balance (HB) and<br />
SPICE. The technique does not disregard the<br />
<strong>in</strong>herent advantages of these venerable simulators<br />
but rather builds on their unique characteristics<br />
by comb<strong>in</strong><strong>in</strong>g modulation data <strong>in</strong><br />
the time doma<strong>in</strong> and carrier signals <strong>in</strong> the frequency<br />
doma<strong>in</strong>. It delivers a spectrum that<br />
gives designers access to the modulation <strong>in</strong>formation<br />
(i.e. amplitude and phase) of every<br />
harmonic of the signal as they evolve over<br />
time. The result is the ability to analyze complex<br />
digitally-modulated waveforms fast and<br />
with greater accuracy than with the aforementioned<br />
simulators alone.<br />
The further advantages provided by AWR’s<br />
circuit envelope simulation result from its<br />
synergy with the other tools with<strong>in</strong> the AWR<br />
2011 Design Suite. That is, <strong>Microwave</strong> Office<br />
high-frequency design software <strong>in</strong>corporates<br />
thermal device effects and captures distributed<br />
design elements <strong>in</strong> a complete l<strong>in</strong>ear and<br />
steady-state nonl<strong>in</strong>ear design suite. Its circuit<br />
representation flows seamlessly <strong>in</strong>to the system-level<br />
environment of VSS, where circuit<br />
envelope simulation is then employed to monitor<br />
voltage and current waveforms <strong>in</strong> seconds<br />
rather than the m<strong>in</strong>utes or hours required by<br />
transient solvers. With access to DC dissipated<br />
power as an output and any number of DC<br />
36 High <strong>Frequency</strong> Electronics
High <strong>Frequency</strong> Products<br />
CIRCUIT ENVELOPE<br />
Figure 1 · Inf<strong>in</strong>eon power amplifier viewed with<strong>in</strong> AWR 2011 (circuit envelope<br />
schematic, layout, 3D view and simulation results).<br />
<strong>in</strong>put p<strong>in</strong>s to an underly<strong>in</strong>g<br />
<strong>Microwave</strong> Office power amplifier circuit,<br />
VSS and circuit envelope simulation<br />
can enable complex active<br />
feedback, dynamic bias<strong>in</strong>g, or<br />
MAC/PHY layer simulation scenarios.<br />
Beyond Harmonic Balance<br />
Harmonic balance is the basic<br />
nonl<strong>in</strong>ear simulation eng<strong>in</strong>e for RF<br />
and microwave design, solv<strong>in</strong>g for<br />
nonl<strong>in</strong>ear, steady-state voltages and<br />
currents <strong>in</strong> the frequency doma<strong>in</strong>. As<br />
long as the signals of <strong>in</strong>terest are<br />
periodic, HB eng<strong>in</strong>es are computationally<br />
efficient, very fast, and produce<br />
excellent results when provided<br />
with good models.<br />
Harmonic balance, however<br />
assumes that the data stream is periodic.<br />
So, when simulat<strong>in</strong>g a complex<br />
modulated signal (common to modern<br />
digital communication systems) with<br />
an arbitrary bit stream, the period of<br />
the <strong>in</strong>put signal must be at least as<br />
long as the stream of <strong>in</strong>put data.<br />
When sampled appropriately, this<br />
leads to a huge number of spectral<br />
frequencies that must all be solved<br />
for simultaneously via HB techniques.<br />
Likewise, when simulat<strong>in</strong>g<br />
memory effects us<strong>in</strong>g HB simulation<br />
techniques for example, their aperiodicity<br />
must first be reformulated as<br />
a predictable signal. Corre-lation<br />
effects, not part of the actual physical<br />
phenomena, can then creep <strong>in</strong>to the<br />
results and cause <strong>in</strong>accuracies.<br />
Another limitation of HB perta<strong>in</strong>s<br />
to circuit/system-level co-simulation.<br />
When it is advantageous to <strong>in</strong>clude<br />
feedback with<strong>in</strong> the system simulation—where<br />
the circuit simulation is<br />
controlled by the system simulation<br />
us<strong>in</strong>g previous circuit simulation<br />
time samples—this type of co-simulation<br />
simply cannot be performed with<br />
a steady state HB circuit simulator.<br />
Enter Circuit Envelope Simulation<br />
To capture dynamic operat<strong>in</strong>g<br />
phenomena such as memory effects,<br />
time-doma<strong>in</strong> simulation is required,<br />
usually <strong>in</strong> the form of a transient,<br />
SPICE-type solver which, unlike HB,<br />
requires the entire waveform to be<br />
sampled. A 5 MHz-wide modulated<br />
signal on a 2 GHz carrier, for example,<br />
would require an <strong>in</strong>teger multiple<br />
(N) of 2 GHz as a sampl<strong>in</strong>g frequency.<br />
If the simulated signal frame<br />
is 10 ms long, the simulation eng<strong>in</strong>e<br />
must simulate N ×2GHz×10ms =<br />
N × 2e7 samples to achieve results.<br />
While this will produce a solution, so<br />
many time steps are required that<br />
simulation speed slows to a crawl.<br />
Circuit envelope simulation<br />
assumes that the <strong>in</strong>put waveform has<br />
somewhat different characteristics.<br />
Unlike HB, time-doma<strong>in</strong> techniques<br />
such as SPICE and circuit envelope<br />
can capture non-periodic dynamic<br />
operat<strong>in</strong>g-po<strong>in</strong>t <strong>in</strong>formation required<br />
for simulat<strong>in</strong>g memory effects.<br />
Rather than sampl<strong>in</strong>g the RF carrier,<br />
circuit envelope simulation samples<br />
only the modulation envelope. In the<br />
example above, this translates <strong>in</strong>to<br />
N×5 MHz × 10 ms samples which is<br />
a 400x reduction <strong>in</strong> the number of<br />
time steps. Each time sample <strong>in</strong> a circuit<br />
envelope simulation is effectively<br />
solv<strong>in</strong>g the harmonic balance equations<br />
at the modulation carrier and<br />
related harmonic frequencies, so a<br />
s<strong>in</strong>gle time sample <strong>in</strong> envelope is<br />
more expensive than a s<strong>in</strong>gle SPICE<br />
transient time po<strong>in</strong>t (typically 10 to<br />
100x slower) and thus a 400x reduction<br />
<strong>in</strong> time samples would result <strong>in</strong><br />
a 4 to 40x improvement <strong>in</strong> circuit<br />
envelope simulation time versus that<br />
of SPICE. As the modulation bandwidth<br />
<strong>in</strong>creases, the benefits of circuit<br />
envelope simulation will<br />
decrease, and for very wide band<br />
modulation, a SPICE type simulation<br />
will more than likely be faster.<br />
Circuit envelope simulation is a<br />
perfect co-simulation match for VSS,<br />
which also samples the modulation<br />
envelope while creat<strong>in</strong>g, demodulat<strong>in</strong>g,<br />
and analyz<strong>in</strong>g modulated waveforms<br />
such as GSM, EDGE, WCDMA,<br />
and LTE. Circuit envelope simulation<br />
lets designers place N-port <strong>Microwave</strong><br />
Office circuit schematics directly<br />
<strong>in</strong>to VSS system diagrams and<br />
simulate them to see how they<br />
behave <strong>in</strong> the presence of modulated<br />
waveforms. Dynamic voltages and<br />
currents and thus power-added efficiency<br />
can be of value weighted as<br />
well. The AWR software environment<br />
makes it possible to easily move<br />
between simulators and analysis<br />
techniques. Schematic elements correspond<strong>in</strong>g<br />
to analyses and measurements<br />
can have multiple roles allow<strong>in</strong>g<br />
l<strong>in</strong>ear, HB, transient, and circuit<br />
38 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Products<br />
CIRCUIT ENVELOPE<br />
Figure 2 · Circuit envelope nonl<strong>in</strong>ear simulation-based <strong>in</strong>stance of<br />
Inf<strong>in</strong>eon power amplifier<br />
envelope simulation to coexist <strong>in</strong> the<br />
same schematic.<br />
As circuit envelope (Figure 1) is a<br />
time-doma<strong>in</strong> technique, it is necessary<br />
to specify voltage and current<br />
probe-po<strong>in</strong>ts on the schematic.<br />
Traditional <strong>in</strong>put/output ports for the<br />
design are handled by PORT elements.<br />
Additional probes are also<br />
placed at the dra<strong>in</strong> and <strong>in</strong> the DC<br />
bias path to supply DC voltage and<br />
monitor RF and DC voltage and current.<br />
Furthermore, s<strong>in</strong>ce circuit envelope<br />
simulation is not restricted to<br />
the DC, fundamental, and harmonic<br />
Figure 3 · Complete VSS diagram with circuit envelope co-simulation and<br />
predistortion.<br />
elements of an HB analysis, the decision<br />
about where to place probes can<br />
be made based on much broader set<br />
of design criteria than signal sources<br />
and paths. The time-doma<strong>in</strong> aspect of<br />
circuit envelope simulation allows<br />
design criteria like dynamic bias<br />
amplifiers, bias turn-down, or active<br />
equalization to be <strong>in</strong>corporated <strong>in</strong>to<br />
the simulation as well.<br />
Prior to <strong>in</strong>corporat<strong>in</strong>g the power<br />
amplifier <strong>in</strong> a circuit envelope test<br />
bench <strong>in</strong> VSS software, a hierarchical<br />
element must be created with<strong>in</strong><br />
<strong>Microwave</strong> Office. The “subckt” element<br />
represent<strong>in</strong>g the power amplifier<br />
design (Figure 2) has a typical<br />
PORT <strong>in</strong>put driven by a source and a<br />
correspond<strong>in</strong>g PORT output, but the<br />
element is augmented by five additional<br />
p<strong>in</strong>s def<strong>in</strong>ed by the (NCONN)-<br />
named connectors: two voltage supply<br />
l<strong>in</strong>es, one RF voltage monitor, one<br />
RF current monitor, and one DC current<br />
monitor.<br />
Mov<strong>in</strong>g on to the envelope<br />
schematic, the complete power amplifier<br />
can be assembled from its constituent<br />
parts. The device with<strong>in</strong><br />
<strong>Microwave</strong> Office software can be<br />
comb<strong>in</strong>ed with other elements such<br />
as digital pre-distortion, filter<strong>in</strong>g,<br />
and antenna and channel models.<br />
Port def<strong>in</strong>itions are added to the element<br />
to describe port functionality<br />
relative to the circuit simulation so<br />
the <strong>in</strong>put port or ports, output ports,<br />
and DC or bias <strong>in</strong>put l<strong>in</strong>es can be controlled<br />
and monitored. Total DC<br />
power dissipation can be monitored<br />
as a separate port, calculated with<strong>in</strong><br />
the <strong>Microwave</strong> Office simulation, and<br />
then ported to VSS and circuit envelope<br />
for analyses of power-added efficiency<br />
and other DC-related parameters.<br />
The FCOUTSPEC parameter<br />
specifies the harmonic around which<br />
the envelope is to be simulated. Both<br />
RF and DC can be <strong>in</strong>dicated for each<br />
of the output ports.<br />
RF source and signal blocks comb<strong>in</strong>ed<br />
with a Vector Signal Analyzer<br />
(VSA) block determ<strong>in</strong>e the simulation<br />
criteria. A voltage source is<br />
added to control the DC bias <strong>in</strong>to the<br />
power amplifier, which <strong>in</strong> a more<br />
advanced design could be dynamic<br />
bias<strong>in</strong>g, active time-doma<strong>in</strong> circuitry,<br />
or MAC or PHY layer control, and<br />
even <strong>in</strong>clud<strong>in</strong>g feedback, because the<br />
voltage p<strong>in</strong> is with<strong>in</strong> the VSS/circuit<br />
envelope time-doma<strong>in</strong> environment.<br />
This is not available <strong>in</strong> l<strong>in</strong>ear or HB<br />
analyses alone. In Figure 3, a digital<br />
predistortion circuit precedes the<br />
power amplifier <strong>in</strong> the signal path to<br />
create a more efficient, highly-l<strong>in</strong>ear<br />
design solution that could not be<br />
designed with only a time-doma<strong>in</strong> or<br />
40 High <strong>Frequency</strong> Electronics
Specializ<strong>in</strong>g <strong>in</strong> multiple layers<br />
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eng<strong>in</strong>eer<strong>in</strong>g, test<strong>in</strong>g resources, and a wide<br />
range of advanced manufactur<strong>in</strong>g techniques<br />
(chip & wire, flip chip, BGA, more). Email<br />
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Available from:<br />
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Military-grade resistive components<br />
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3dB 90° hybrid and 20dB directional couplers<br />
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<strong>Frequency</strong> Ga<strong>in</strong> Ga<strong>in</strong> Noise VSWR Output Power Nom.<br />
Model Range (M<strong>in</strong>./Max.) Flatness Figure IN/OUT @ 1 dB Comp. DC Power<br />
Number (GHz) (dB) (±dB) (dB, Max.) (Max.) (dBm, M<strong>in</strong>.) (+15 V, mA)<br />
OCTAVE BAND AMPLIFIERS<br />
AFS3-00120025-09-10P-4 0.12-.25 38 0.50 0.9 2.0:1 +10 125<br />
AFS3-00250050-08-10P-4 0.25-0.5 38 0.50 0.8 2.0:1 +10 125<br />
AFS3-00500100-06-10P-6 0.5-1 38 0.75 0.6 2.0:1/1.5:1 +10 150<br />
AFS3-01000200-05-10P-6 1-2 38 1.00 0.5 2.0:1 +10 150<br />
AFS3-01200240-06-10P-6 1.2-2.4 34 1.00 0.6 2.0:1 +10 150<br />
AFS3-02000400-06-10P-4 2-4 32 1.00 0.6 2.0:1 +10 125<br />
AFS3-02600520-10-10P-4 2.6-5.2 28 1.00 1.0 2.0:1 +10 125<br />
AFS3-04000800-07-10P-4 4-8 32 1.00 0.7 2.0:1 +10 100<br />
AFS3-08001200-09-10P-4 8-12 28 1.00 0.9 2.0:1 +10 80<br />
AFS3-08001600-15-8P-4 8-16 28 1.00 1.5 2.0:1 +8 100<br />
AFS4-12001800-18-10P-4 12-18 28 1.50 1.8 2.0:1 +10 125<br />
JS4-18002600-22-10P 18-26 35 1.50 2.2 2.0:1 +10 200<br />
JS3-18004000-40-15P 18-40 32 2.70 4.0 2.6:1 +15 400*<br />
JS4-18004000-30-5P 18-40 23 2.50 3.0 2.5:1 +5 200<br />
JS42-18004000-31-8P 18-40 35 3.50 3.1 2.5:1 +8 300<br />
JS1-26004000-100-19P 26-40 17 2.50 10.0 2.5:1 +19 400*<br />
JS4-26004000-30-8P 26-40 23 2.50 3.0 2.5:1 +8 200<br />
JS42-26004000-31-8P 26-40 37 3.50 3.1 2.5:1 +8 300<br />
MULTIOCTAVE BAND AMPLIFIERS<br />
AFS3-00500200-08-15P-4 0.5-2 38 1.00 0.8 2.0:1 +15 125<br />
AFS3-01000400-10-10P-4 1-4 30 1.50 1.0 2.0:1 +10 125<br />
AFS3-02000800-09-10P-4 2-8 26 1.00 0.9 2.0:1 +10 125<br />
AFS4-02001800-24-10P-4 2-18 35 2.50 2.4 2.5:1 +10 175<br />
AFS4-06001800-22-10P-4 6-18 25 2.00 2.2 2.0:1 +10 125<br />
AFS4-08001800-22-10P-4 8-18 28 2.00 2.2 2.0:1 +10 125<br />
ULTRA WIDEBAND AMPLIFIERS<br />
AFS3-00100100-09-10P-4 0.1-1 38 1.00 0.9 2.0:1 +10 125<br />
AFS3-00100200-10-15P-4 0.1-2 38 1.00 1.0 2.0:1 +15 150<br />
AFS3-00100300-12-10P-4 0.1-3 34 1.00 1.2 2.0:1 +10 125<br />
AFS3-00100400-13-10P-4 0.1-4 30 1.00 1.3 2.0:1 +10 125<br />
AFS3-00100600-13-10P-4 0.1-6 30 1.25 1.3 2.0:1 +10 125<br />
AFS3-00100800-14-10P-4 0.1-8 28 1.50 1.4 2.0:1 +10 125<br />
AFS4-00101200-22-10P-4 0.1-12 30 1.50 2.2 2.0:1 +10 150<br />
JS4-00102000-25-10P 0.1-20 29 2.00 2.5** 2.5:1 +10 200<br />
JS4-00102600-30-10P 0.1-26 28 2.50 3.0** 2.5:1 +10 200<br />
JS4-00104000-54-5P 0.1-40 30 3.00 5.4** 2.5:1 +5 200<br />
Noise figure <strong>in</strong>creases below 500 MHz.<br />
* Dual Voltage, -8V@50 mA. ** Above 800 mHz.<br />
This is only a small sample of our extensive list of standard catalog items.<br />
Please contact our Sales Department at (631) 439-9220 or e-mail components@miteq.com<br />
for additional <strong>in</strong>formation or to discuss your custom requirements.<br />
100 Davids Drive, Hauppauge, NY 11788<br />
TEL.: (631) 436-7400 • FAX: (631) 436-7430<br />
www.miteq.com<br />
Get <strong>in</strong>fo at www.HFeL<strong>in</strong>k.com
Eng<strong>in</strong>eers:<br />
Stay Informed!<br />
Subscribe to<br />
High <strong>Frequency</strong><br />
Electronics!<br />
Be on top of your game:<br />
Figure 4 · Multi-carrier spectrum, time doma<strong>in</strong> waveforms, as well as dra<strong>in</strong><br />
current and voltage for Inf<strong>in</strong>eon PA as simulated by AWR 2011 software<br />
featur<strong>in</strong>g circuit envelope technology.<br />
• Timely technical articles<br />
• New product <strong>in</strong>formation<br />
• Industry news and events<br />
• Knowledgeable editors<br />
HB simulator.<br />
The analysis results provide all<br />
the <strong>in</strong>formation required for system<br />
and circuit co-design without constra<strong>in</strong>ts<br />
on the simulation techniques<br />
used (Figure 4). Harmonic content,<br />
spectral masks, P <strong>in</strong><br />
-versus-P out<br />
curves, and ga<strong>in</strong> all can be analyzed<br />
with AWR’s new circuit envelope<br />
technology. Additionally, these<br />
results can now be comb<strong>in</strong>ed with<br />
time-doma<strong>in</strong> analyses, such as collector<br />
current and voltage waveforms<br />
and RF perturbations of DC bias<br />
l<strong>in</strong>es. Active turn-down through simulated<br />
control of DC p<strong>in</strong>s can also be<br />
explored and analyzed. Waveforms<br />
and outputs are cont<strong>in</strong>ually updated<br />
based on user-specified sampl<strong>in</strong>g and<br />
averag<strong>in</strong>g criteria and can run realtime,<br />
which allows tun<strong>in</strong>g and optimization<br />
with<strong>in</strong> both <strong>Microwave</strong><br />
Office and VSS software.<br />
Summary<br />
The str<strong>in</strong>gent demands of the<br />
higher-order modulation schemes<br />
employed <strong>in</strong> today's lead<strong>in</strong>g-edge<br />
wireless systems make it essential<br />
that all ASP banks of RF power<br />
amplifier performance be taken <strong>in</strong>to<br />
consideration. The <strong>in</strong>tegration of circuit<br />
envelope simulation with<strong>in</strong> the<br />
AWR 2011 design suite and its seamless<br />
<strong>in</strong>teraction with VSS allow<br />
designers to create amplifiers that<br />
deliver both high l<strong>in</strong>earity and efficiency<br />
are of broad bandwidths that<br />
could not otherwise be achieved.<br />
Acknowledgements<br />
AWR would like to thank Inf<strong>in</strong>eon<br />
for their assistance with the test<strong>in</strong>g<br />
of this new feature from AWR. The<br />
design shown <strong>in</strong> all figures is courtesy<br />
of Inf<strong>in</strong>eon Technologies and corresponds<br />
to their ELMO models for<br />
LD9-based smart discrete devices.<br />
Author Information<br />
Josh Moore, a University of<br />
Ill<strong>in</strong>ois Eng<strong>in</strong>eer<strong>in</strong>g alumnus, is<br />
presently a Solution Architect with<br />
AWR. Before jo<strong>in</strong><strong>in</strong>g AWR, Josh spent<br />
several years at Nokia as an RF<br />
design eng<strong>in</strong>eer work<strong>in</strong>g on base station<br />
and mobile device receivers, and<br />
at Agilent Technologies as an ADS<br />
Application Eng<strong>in</strong>eer.<br />
For more <strong>in</strong>formation contact:<br />
AWR Corporation<br />
www.awrcorp.com<br />
Tel: 310-726-3000<br />
E-mail: <strong>in</strong>fo@awrcorp.com<br />
Subscribe onl<strong>in</strong>e at our Web site:<br />
just click on the “Subscriptions”<br />
button on our ma<strong>in</strong> page, www.<br />
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.com<br />
October 2011 43
TECHNOLOGY REPORT<br />
News Update on Cable<br />
and Connector Bus<strong>in</strong>ess<br />
and Technology<br />
For this month’s report, we felt the best way to<br />
report on recent developments <strong>in</strong> cables and connectors<br />
was to present recent new product and<br />
technology announcements from various suppliers of<br />
these essential components.<br />
Power Connector for Tower-Mounted Base Stations<br />
Amphenol Industrial (www.amphenol-<strong>in</strong>dustrial.com )<br />
has <strong>in</strong>troduced Amphe-BTS, a new power connector<br />
designed to provide<br />
power from a wireless,<br />
mast-mounted<br />
base station to a<br />
remote radio head.<br />
This compact connector<br />
meets the strict<br />
requirements set<br />
forth by the next<br />
generation of base stations. This field-<strong>in</strong>stallable connector<br />
elim<strong>in</strong>ates the need to ship heavy pre-made cable<br />
assemblies around the world.<br />
The Amphe-BTS provides 360° EMI shield<strong>in</strong>g with<br />
ground<strong>in</strong>g f<strong>in</strong>gers and utilizes a bayonet lock<strong>in</strong>g mechanism<br />
with strong vibration and shock resistance. The connectors<br />
are lightn<strong>in</strong>g resistant due to their excellent conductivity.<br />
The receptacle has crimp contacts and the plug<br />
has screw term<strong>in</strong>ation contacts for easy field <strong>in</strong>stallation<br />
and replacement. This circular connector, based on MIL-<br />
C-26482 series 2, features a brass shell construction with<br />
t<strong>in</strong> over nickel plat<strong>in</strong>g, mak<strong>in</strong>g it corrosion resistant and<br />
compliant with ISO 21207. The Amphe-BTS has a cable<br />
seal<strong>in</strong>g range of 7 mm to 18 mm, a temperature range of<br />
–55° to +85°C and is available <strong>in</strong> standard two-way 48<br />
VDC, two-way reverse gender 48 VDC and three-way 400<br />
VDC/250 VAC power configuration. The IP65-rated<br />
Amphe-BTS connector is UL and TUV certified.<br />
Simulation of Cable Currents and EM Fields<br />
Computer Simulation Technology (CST–www.cst.com)<br />
announces the release of transient bidirectional co-simulation<br />
between cable currents and the electromagnetic<br />
fields <strong>in</strong> the surround<strong>in</strong>g space for CST STUDIO<br />
SUITE version 2011 SP5. The announcement was made<br />
at the 2011 IEEE EMC Symposium <strong>in</strong> Long Beach, CA.<br />
In many EMC applications, cabl<strong>in</strong>g has a major<br />
impact on the immunity and emissions performance of a<br />
system. Cables can receive electromagnetic fields and<br />
propagate the <strong>in</strong>duced voltages/currents through enclosures<br />
(shields) <strong>in</strong>to sensitive circuits caus<strong>in</strong>g <strong>in</strong>terference.<br />
Conversely, cables can conduct and radiate electromagnetic<br />
noise from a system result<strong>in</strong>g <strong>in</strong> EMC compliance<br />
issues.<br />
In reality, the coupl<strong>in</strong>g between fields and complex<br />
cable bundles is bi-directional; cables can both receive<br />
and re-radiate electromagnetic fields. Depend<strong>in</strong>g on the<br />
rout<strong>in</strong>g/position of cables with<strong>in</strong> an enclosure, the field<br />
distribution, modes and current paths can be strongly<br />
affected. In the past, modelers have often simplified the<br />
field/cable <strong>in</strong>teraction problem by assum<strong>in</strong>g one-way coupl<strong>in</strong>g,<br />
but this may produce <strong>in</strong>accurate results.<br />
CST has overcome this limitation by tightly <strong>in</strong>tegrat<strong>in</strong>g<br />
CST CABLE STUDIO (CST CS) with the powerful 3D<br />
transient solvers <strong>in</strong> CST MICROWAVE STUDIO ® (CST<br />
MWS). This enables true transient bi-directional<br />
field/cable coupl<strong>in</strong>g to be simulated for complex cable<br />
bundles routed through complex 3D environments such<br />
as electronics enclosures, aircraft, automobiles etc.<br />
Accurate analysis can be performed efficiently, despite<br />
the huge difference <strong>in</strong> scale between cable cross-section<br />
dimensions and overall system/vehicle dimensions.<br />
Cable Assemblies Feature Low Passive IMD<br />
San-tron, Inc. (www.santron.com) has announced a<br />
new series of PIM cable assemblies. Dubbed the Intermod<br />
Squad, they feature <strong>in</strong>termodulation performance as low<br />
44 High <strong>Frequency</strong> Electronics
When your name alone says it all<br />
Your application demands more than a commodity<br />
solution. TRU eng<strong>in</strong>eered designs deliver field-proven<br />
performance and reliability. Demand the best.<br />
Connect TRU with your 7-16 challenge.<br />
• Extensive range of cable assembly and<br />
connector products<br />
• Vertically <strong>in</strong>tegrated design, manufacture<br />
and test capabilities<br />
• Available with TRUlustre, tri-metal plat<strong>in</strong>g for<br />
sensitive <strong>in</strong>termodulation requirements<br />
To learn more about how TRU can connect with you,<br />
visit our new website: trucorporation.com<br />
Scan to learn more about<br />
TRU 7-16 solutions<br />
©2011 TRU Corporation<br />
TRU Corporation<br />
Peabody, MA 01960 USA<br />
1 800 262-9878<br />
(1 800 COAX-TRU)<br />
978 532-0775<br />
To request literature:<br />
market<strong>in</strong>g@trucorporation.com<br />
trucorporation.com
TECHNOLOGY REPORT<br />
as –181 dBc with an eSeries 7/16 connector term<strong>in</strong>ated on<br />
TFlex-402 cable. Typical performance across the l<strong>in</strong>eup of<br />
assemblies term<strong>in</strong>ated with eSMA and eSeries Type Ns is<br />
–162 dBc. The eSMA<br />
cable assemblies perform<br />
DC-20 GHz and<br />
the eSeries Type N<br />
cable assemblies perform<br />
DC-18 GHz.<br />
These assemblies are<br />
phase and attenuation<br />
stable, provide excellent shield<strong>in</strong>g, support UL/NEC<br />
Plenum class CMP, are corrosion resistant, and are low <strong>in</strong><br />
weight and highly flexible.<br />
The key component <strong>in</strong> San-tron PIM cable assemblies<br />
are the latest series of connectors recently <strong>in</strong>troduced by<br />
San-tron, the eSeries of connectors, which <strong>in</strong>cludes SMA<br />
(trademarked as eSMA), Type N, TNC, and 7/16 styles. To<br />
facilitate strong PIM performance these connector bodies<br />
are plated with white bronze Albaloy. The Albaloy plat<strong>in</strong>g<br />
provides a robust surface that easily accepts the braid solder<br />
jo<strong>in</strong>t and supports corrosion resistance per salt fog<br />
test<strong>in</strong>g. The eSMA center contacts are BeCu; they are<br />
plated .000030 gold over a copper strike provid<strong>in</strong>g great<br />
RF performance, corrosion resistance, and controls over<br />
porosity. The eSeries N and 7/16 center contacts are plated<br />
.000200 silver over a copper strike which conta<strong>in</strong>s cost<br />
versus gold, and also provides excellent RF performance<br />
and corrosion resistance.<br />
EMI-Filtered Circular Connectors<br />
API Technologies’<br />
Spectrum Control<br />
(www.SpecEMC<br />
.com) product l<strong>in</strong>e<br />
announces their new<br />
composite connector<br />
series. These composite<br />
connectors feature<br />
shells fabricated<br />
from high grade thermoplastic. Designed to replace traditional<br />
metal connector shells for substantial weight<br />
reduction, this addition to the Spectrum Control product<br />
l<strong>in</strong>e offers composite shell versions of its circular connectors<br />
<strong>in</strong> MIL-38999 series III and IV, available with EMI<br />
filter<strong>in</strong>g.<br />
The new composite shell ma<strong>in</strong>ta<strong>in</strong>s the form, fit and<br />
function of the orig<strong>in</strong>al connector shell, mak<strong>in</strong>g it ideal<br />
for applications where weight is a critical factor, such as<br />
<strong>in</strong> the military and aerospace <strong>in</strong>dustries. Given the company’s<br />
unique vertical <strong>in</strong>tegration capabilities, custom<br />
mechanical variations may be provided without traditional<br />
tool<strong>in</strong>g charges. With several types of filter<strong>in</strong>g<br />
available, these custom high reliability, circular connectors<br />
provide high quality and performance.<br />
SMP Connectors for UT Series Cables<br />
Cross RF (www.crossrf.com) offers SMP Connectors<br />
for UT series cables,<br />
both semi-rigid and<br />
semi-flexible types.<br />
The SMP <strong>in</strong>terface is<br />
a subm<strong>in</strong>iature<br />
<strong>in</strong>terface <strong>in</strong> the same<br />
scale as MMCX connectors.<br />
Four types of<br />
50-ohm SMP connectors<br />
have been <strong>in</strong>troduced,<br />
<strong>in</strong> either right<br />
angle or straight with term<strong>in</strong>ation capability to either<br />
0.047” or 0.086”, semi-rigid or conformable coax. They<br />
cover the frequency range of DC-12 GHz with a maximum<br />
0.1 dB <strong>in</strong>sertion loss and 1.25:! VSWR.<br />
Interface is per Mil-STD-348, with an anti-lock r<strong>in</strong>g<br />
body, beryllium copper contact, brass cap and Teflon ®<br />
<strong>in</strong>sulator. The connectors have gold plat<strong>in</strong>g over nickel<br />
underplate. Typical applications <strong>in</strong>clude PC board to<br />
board <strong>in</strong>terconnect, broadband communications, <strong>in</strong>strumentation,<br />
and telecom systems.<br />
Low Loss, Low PIM Coaxial Cable<br />
Times <strong>Microwave</strong> (www.timesmicrowave.com) LMR ® -<br />
SW is a low loss, low PIM, high performance 50 ohm coax<br />
cable with a seamless alum<strong>in</strong>ium outer conductor, provid<strong>in</strong>g<br />
better durability <strong>in</strong> bend<strong>in</strong>g than seam-welded cables,<br />
and better electrical performance than corrugated cables.<br />
LMR-SW cable is also lighter and provides significant<br />
cost sav<strong>in</strong>gs compared to corrugated cables. The field<br />
<strong>in</strong>stalled connectors have superior weather seal<strong>in</strong>g,<br />
VSWR and consistent PIM performance.<br />
LMR-SW cables support PIM-sensitive <strong>in</strong>stallations<br />
such as full duplex transmission l<strong>in</strong>es and co-located<br />
sites. They are suitable for short to medium height tower<br />
runs and flexible enough to be used as jumper cables <strong>in</strong><br />
cell-sites and other RF applications up to 6 GHz. The high<br />
quality type N and 7/16 DIN connectors are user-friendly<br />
and provide excellent and reliable performance when<br />
<strong>in</strong>stalled with the easy-to-use cable prep tools. PIM per-<br />
46 High <strong>Frequency</strong> Electronics
Flex Test TM<br />
Quick Lock<br />
PRECISION TEST<br />
Armored<br />
CABLESnow up<br />
40 GHz<br />
Low Loss<br />
to 40 GHz<br />
Rugged, reliable, ready to ship, custom lengths on request!<br />
40 GHz<br />
Phase Stable<br />
High-quality data requires high-quality cables — and<br />
different models to meet different needs. M<strong>in</strong>i-Circuits Precision<br />
Test Cables have been designed with our 40 years of <strong>in</strong>dustry<br />
experience <strong>in</strong> m<strong>in</strong>d, and tested beyond any others on the<br />
market. It’s why we can back them with an unprecedented<br />
6-month guarantee,* and customers can save time and<br />
money with fewer false rejects and less retest<strong>in</strong>g.<br />
Flex Test Our standard, triple-shielded CBL cables are so<br />
tough, we had to <strong>in</strong>vent a new way to test them:<br />
Flex Test. Even after more than 20,000 flex cycles,<br />
these cables deliver unimpaired performance from<br />
DC-18 GHz. Ideal for design labs or test benches,<br />
they’re available <strong>in</strong> lengths up to 25 feet with SMA or<br />
N-type connectors.<br />
Armored For harsh, abusive, outdoor environments, our APC<br />
cables can’t be beat. Even 1,000 crush cycles with a<br />
440-lb nitrogen tank had m<strong>in</strong>imal effect: attenuation<br />
<strong>in</strong>creased only 0.15 dB, while return loss <strong>in</strong>/out<br />
rema<strong>in</strong>ed 20 dB from DC-18 GHz. N-type<br />
connectors are standard, with lengths from 6<br />
to 15 feet <strong>in</strong> stock.<br />
Our new 40 GHz cables are proven through 20,000 flex<br />
cycles, and are fitted with high-performance connectors that<br />
mate with K ® - and SMA-equipped DUTs. Standard lengths<br />
range from 1.5 feet to 2 meters.<br />
Low Loss For design work requir<strong>in</strong>g long cable runs or whenever<br />
Ka-band signal strength is key, our KBL-LOW<br />
cables are ideal. Insertion loss is only 2.46 dB/m<br />
at 40 GHz, with a velocity ratio of 84%.<br />
Quick Lock For high-speed production efficiency and superior<br />
electrical & mechanical performance, our QBL cables are Phase Stable When phase stability is a concern, as <strong>in</strong> many<br />
the answer. Just push them onto a standard female<br />
high-frequency production tests, try our KBL-PHS<br />
cables. They offer a phase change 0.1°/GHz<br />
SMA connector and slide the collar forward to lock.<br />
when wrapped a full turn around a 3” diameter<br />
You’ll get proven high-<strong>in</strong>tegrity DC-18 GHz connections,<br />
mandrel, and a shield<strong>in</strong>g effectiveness of 110 dB!<br />
even after 20,000 flex and 20,000 mat<strong>in</strong>g cycles!<br />
RoHS compliant<br />
See m<strong>in</strong>icircuits.com for cable lengths, specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />
* M<strong>in</strong>i-Circuits will repair or replace your test cable at its option if the connector attachment fails with<strong>in</strong> six months of shipment.<br />
This guarantee excludes cable or connector <strong>in</strong>terface damage from misuse or abuse.<br />
K-Connector is a registered trademark of Anritsu Company.<br />
M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />
®<br />
U.S. Patents<br />
7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
IF/RF MICROWAVE COMPONENTS<br />
491 rev B
TECHNOLOGY REPORT<br />
formance better than –170 dBc can be achieved consistently.<br />
0.450" and 0.610" cable sizes are offered, along<br />
with ground<strong>in</strong>g kits, hangers and other <strong>in</strong>stallation accessories.<br />
Composite BNC 75 ohm HDTV Connectors<br />
Radiall (www. radiall.com)<br />
recently<br />
added a lightweight<br />
and easy-to-use composite<br />
BNC 75 ohm<br />
HDTV connector to its<br />
offer<strong>in</strong>g of affordable<br />
HDTV BNC series for<br />
studio quality broadcast<br />
production to<br />
video conferenc<strong>in</strong>g equipment applications.<br />
Radiall’s new technologically advanced true 75 ohm<br />
BNC HDTV connector features an easy-to-use two-piece<br />
design that makes it easy to crimp on the cable. This new<br />
connector can handle data rates up to 3 Gbps or higher<br />
while meet<strong>in</strong>g or exceed<strong>in</strong>g SMPTE 292M and 424M<br />
standards. The gold plated center and outer contacts provide<br />
excellent electrical performance with a frequency<br />
range of up to 6 GHz, and a low return loss of -32 dB at 3<br />
GHz. In addition, it is rated for a m<strong>in</strong>imum of 1000 mat<strong>in</strong>g<br />
cycles for guaranteed durability <strong>in</strong> the field.<br />
It comes <strong>in</strong> a wide variety of colors for signal cable<br />
identification and its special curved <strong>in</strong>terface composite<br />
material design with position<strong>in</strong>g marks makes it easy<br />
and fast to connect and disconnect from the rear <strong>in</strong> highdensity<br />
and recessed bulkhead applications. The connectors<br />
are also perfectly matched to high-performance HD<br />
cables.<br />
Cables Need No Braid Trim<br />
Times <strong>Microwave</strong> Systems (www.timesmicrowave.<br />
com) announces that No-Braid-Trim-X series of connectors<br />
for LMR ® cable<br />
has been expanded<br />
to encompass the<br />
most popular <strong>in</strong>terfaces<br />
for the most<br />
popular cables, LMR-<br />
400 and LMR-600<br />
The new No-Braid-<br />
Trim-X series of connectors<br />
offers the<br />
new feature of a term<strong>in</strong>ation process that no longer<br />
requires trimm<strong>in</strong>g of the braid shield thereby facilitat<strong>in</strong>g<br />
the cable term<strong>in</strong>ation procedure and reduc<strong>in</strong>g the time<br />
required to term<strong>in</strong>ate the cable.<br />
The new No-Braid-Trim-X l<strong>in</strong>e of connectors has all of<br />
these advanced features and benefits:<br />
· Cable can be stripped us<strong>in</strong>g a CST type LMR cable<br />
stripp<strong>in</strong>g tool.<br />
· No braid trimm<strong>in</strong>g required.<br />
· Comb<strong>in</strong>ation hex/knurl coupl<strong>in</strong>g nut allows tighten<strong>in</strong>g<br />
by hand or with a wrench.<br />
· Tri-metal plat<strong>in</strong>g <strong>in</strong>stead of silver elim<strong>in</strong>ates tarnish<strong>in</strong>g,<br />
while provid<strong>in</strong>g superior electrical performance.<br />
· Chamfered cable entry hole for ease of term<strong>in</strong>ation.<br />
· Ridged land<strong>in</strong>g area on the aft end for improved<br />
stra<strong>in</strong> relief and weather seal<strong>in</strong>g.<br />
· Improved impedance match<strong>in</strong>g to provide improved<br />
VSWR.<br />
Distributor Stock of 75-ohm HD-BNC Connectors<br />
The electronics distributor Newark/element14<br />
(www.newark.com, www.element14.com), a bus<strong>in</strong>ess of<br />
global Premier Farnell, announces that it is stock<strong>in</strong>g the<br />
HD-BNC, the newest l<strong>in</strong>e of RF connectors from<br />
Amphenol RF (www.amphenolrf.com). The HD-BNC<br />
enables design eng<strong>in</strong>eers<br />
to fit more connectors<br />
<strong>in</strong>to a smaller<br />
space without<br />
compromis<strong>in</strong>g true<br />
75 ohm performance.<br />
The HD-BNC<br />
series can be configured<br />
with a centerl<strong>in</strong>e<br />
spac<strong>in</strong>g of 8 mm m<strong>in</strong>imum, <strong>in</strong> comparison to the<br />
standard BNC at 15.5. This enables 400% density<br />
improvements and a 250% improvement over the standard<br />
1.0/2.3 DIN. The HD-BNC delivers performance<br />
needed for next-generation broadcast systems. The series<br />
not only meets the specifications of a BNC, it meets or<br />
exceeds all SMPTE requirements.<br />
<strong>Microwave</strong> Connector Torque Wrenches<br />
Coaxial Components Corp. (Coaxicom–www.coaxicom.com)<br />
now offers a l<strong>in</strong>e of torque wrenches for precision<br />
microwave connectors.<br />
The tools are<br />
available for the follow<strong>in</strong>g<br />
connector<br />
types: SMA/3.5 mm/<br />
2.92 mm/2.4 mm,<br />
Type N, SC/N, TNC,<br />
SMC, SSMC, SSMA,<br />
SMA hermetic, 7/16.<br />
Where applicable, wrench models available for either normal<br />
coupl<strong>in</strong>g torque or proof coupl<strong>in</strong>g torque.<br />
Next month’s Technology Report will be an update on<br />
power amplifiers.<br />
48 High <strong>Frequency</strong> Electronics
Tactical Advantage.<br />
When Reliability Counts.<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
www.rogerscorp.com/military<br />
Read Our New<br />
ROG Blog<br />
www.rogerscorp.com/acm<br />
RT/duroid ®<br />
6202PR<br />
RT/duroid ®<br />
5880LZ<br />
RT/duroid ®<br />
6035HTC<br />
Features<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
<br />
Benefits
ZVA-213X<br />
SUPER ULTRA WIDEBAND<br />
AMPLIFIERS<br />
+24 dBm output... 0.7 to 21 GHz<br />
Call<strong>in</strong>g these amplifiers “wideband” doesn’t beg<strong>in</strong> to describe them.<br />
Consider that both the ZVA-183X and ZVA-213X amplifiers are<br />
unconditionally stable and deliver typical +24 dBm output power at 1dB<br />
compression, 26 dB ga<strong>in</strong> with +/- 1 dB flatness, noise figure of 3 dB<br />
and IP3 +33 dBm. What’s more, they are so rugged they can even<br />
withstand full reflective output power when the output load is open or<br />
short. In addition to broadband military and commercial applications,<br />
these super wideband amplifiers are ideal as workhorses for a<br />
wide number of narrow band applications <strong>in</strong> your lab or <strong>in</strong> a<br />
production environment.<br />
Visit our website for comprehensive performance data and<br />
specifications for our ZVAs or any of our over 10,000 catalog items.<br />
You can even order on-l<strong>in</strong>e for next day shipment.<br />
M<strong>in</strong>i-Circuits…we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />
from<br />
$<br />
845 ea.<br />
TYPICAL SPECIFICATIONS<br />
MODEL FREQ. GAIN POUT NOISE FIG. PRICE<br />
(GHz) (dB) ( dBm) (dB) (1-9)<br />
@ 1 dB Comp.<br />
ZVA-183X+ 0.7-18 26 +24 3.0 845.00<br />
ZVA-213X+ 0.8-21 26 +24 3.0 945.00<br />
Note: Alternative heat-s<strong>in</strong>k must be provided to limit maximum base plate temperature.<br />
ZVA-183+ 0.7-18 26 +24 3.0 895.00<br />
ZVA-213+ 0.8-21 26 +24 3.0 995.00<br />
All models IN STOCK!<br />
RoHS compliant<br />
®<br />
U.S. Patents<br />
7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
IF/RF MICROWAVE COMPONENTS<br />
440 rev H
UP TO 100 Watt<br />
AMPLIFIERS<br />
100 kHz to18 GHz<br />
NOW!<br />
ZHL-5W-1<br />
ZHL-5W-2G+<br />
ZHL-20W-13+<br />
LZY-1+<br />
LZY-2+<br />
LZY-22+<br />
ZHL-10W-2G<br />
ZHL-16W-43+<br />
ZHL-30W-252+<br />
ZHL-30W-262+<br />
ZHL-50W-52<br />
ZHL-100W-52<br />
ZHL-100W-GAN+<br />
$<br />
from945ea. qty. (1-9)<br />
It’s Watts you want? From 3 up to 100 Watts,<br />
M<strong>in</strong>i-Circuits has high-power amplifiers built for rugged,<br />
reliable performance <strong>in</strong> heavy-duty, 100 kHz-18 GHz<br />
applications. Each model is available with or without a<br />
heat s<strong>in</strong>k/fan, operat<strong>in</strong>g on a s<strong>in</strong>gle <strong>in</strong>tegrated DC<br />
supply, with surpris<strong>in</strong>gly efficient current consumption.<br />
Extensive safety features prevent amplifier damage from<br />
over-temperature, over-voltage, or open or short loads.<br />
And <strong>in</strong>ternal power regulation delivers high performance<br />
even when your DC power supply is fluctuat<strong>in</strong>g. Our<br />
manufactur<strong>in</strong>g controls ensure that quality and reliability<br />
are built <strong>in</strong>to every unit, to provide the truly robust<br />
amplifiers that our customers demand.<br />
IN STOCK! FAST DELIVERY!<br />
M<strong>in</strong>i-Circuits…we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />
Freq. Ga<strong>in</strong> Pout (dBm) Dynamic Range DC Pwr. Price Price<br />
(MHz) (dB) @Comp NF IP3 Volt Current $ ea. X<br />
Model 1dB 3 dB (dB) (dBm) (V) (A) Qty. 1-9 suffix<br />
With Heat S<strong>in</strong>k/Fan fL-fU Typ. Typ. Typ. Typ. Typ. Nom. Max<br />
NEW<br />
LZY-22+ 0.1-200 43 +42.0 +45.0 8.9 +52 24 6.0 1495 1470<br />
LZY-1+ 20-512 43 +45.7 +47.0 8.6 +54 26 7.3 1995 1895<br />
LZY-2+ 500-1000 46 +45.0 +45.8 8.0 +54 28 8.0 1995 1895<br />
ZHL-5W-1 5-500 44 +39.5 +40.5 4.0 +49 25 3.3 995 970<br />
ZHL-5W-2G+ 800-2000 45 +37.0 +38.0 8.0 +44 24 2.0 995 945<br />
ZHL-10W-2G 800-2000 43 +40.0 +41.0 7.0 +50 24 5.0 1295 1220<br />
ZHL-16W-43+ 1800-4000 45 +41.0 +42.0 6.0 +47 28 4.3 1595 1545<br />
ZHL-20W-13+ 20-1000 50 +41.0 +43.0 3.5 +50 24 2.8 1395 1320<br />
ZHL-30W-252+ 700-2500 50 +44.0 +46.0 5.5 +52 28 6.3 2995 2920<br />
ZHL-30W-262+ 2300-2550 50 +43.0 +45.0 7.0 +50 28 4.3 1995 1920<br />
ZHL-50W-52 50-500 50 +46.0 +48.0 6.0 +55 24 9.3 1395 1320<br />
ZHL-100W-52 50-500 50 +47.0 +48.5 6.5 +57 24 10.5 1995 1920<br />
ZHL-100W-GAN+ 20-500 42 +49.0 +50.0 7.0 +60 30 9.5 2395 2320<br />
ZVE-3W-183+ 5900-18000 35 +34.0 +35.0 5.5 +44 15 2.2 1295 1220<br />
ZVE-3W-83+ 2000-8000 36 +33.0 +35.0 5.8 +42 15 1.5 1295 1220<br />
Protected under U.S. Patent 7,348,854<br />
For models without heat s<strong>in</strong>k, add X suffix to model No.( Example: LZY-1+, LZY-1X+)<br />
ZHL-16W-43X+<br />
ZHL-30W-252X+<br />
ZHL-30W-262X+<br />
ZHL-5W-1X<br />
ZHL-5W-2GX+<br />
®<br />
LZY-1X+<br />
ZHL-20W-13X+<br />
LZY-2X+<br />
LZY-22X+<br />
ZHL-10W-2GX<br />
ZHL-50W-52X<br />
ZHL-100W-52X<br />
ZHL-100W-GANX+<br />
ZVE-3W-83X+<br />
ZVE-3W-183X+<br />
U.S. Patents<br />
7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
IF/RF MICROWAVE COMPONENTS<br />
416 rev Y
High <strong>Frequency</strong> Design<br />
WAFER PROBE TESTING<br />
Probe Test<strong>in</strong>g of Wafer Level<br />
Chip Scale Packag<strong>in</strong>g<br />
By John Whittaker<br />
Teradyne<br />
Wafer Level Chip<br />
Elim<strong>in</strong>at<strong>in</strong>g the”probe<br />
Scale Packag<strong>in</strong>g<br />
tower” <strong>in</strong> automated wafer<br />
(WLCSP) has<br />
probe systems reduces the enabled smaller and th<strong>in</strong>ner<br />
semiconductor devices<br />
size and complexity of the<br />
test system, improves test with greater functionality<br />
accuracy, but requires to be used <strong>in</strong> consumer<br />
more precise mechanical mobile applications such<br />
<strong>in</strong>terface tolerances as smart phones, tablets<br />
and hand held GPS track<strong>in</strong>g<br />
devices. There is an accelerat<strong>in</strong>g trend<br />
toward wafer level chip scale packag<strong>in</strong>g, with<br />
estimates plac<strong>in</strong>g growth at 26% CAGR for<br />
2011 (Yole Market<strong>in</strong>g, 2011). WLCSP has lead<br />
the way to reduced cost of complex semiconductor<br />
devices through simplified packag<strong>in</strong>g and a<br />
reduction <strong>in</strong> the number of touches <strong>in</strong> the semiconductor<br />
test process. Paradoxically, simplified<br />
WLCSP packag<strong>in</strong>g demands have <strong>in</strong>creased<br />
the demands on the test cell, <strong>in</strong>clud<strong>in</strong>g the test<br />
system, wafer prober and the <strong>in</strong>terface to the<br />
device under test.<br />
One of the more significant impacts is the<br />
signal performance requirements that were<br />
required at f<strong>in</strong>al package test are now shifted<br />
to the wafer probe environment, where pad-topad<br />
and ball-to-ball dimensions and tolerances<br />
are much smaller than those at f<strong>in</strong>al<br />
test and cont<strong>in</strong>ue to shr<strong>in</strong>k. This is most clearly<br />
seen <strong>in</strong> the device contact<strong>in</strong>g requirements.<br />
At f<strong>in</strong>al test of a packaged device, alignment of<br />
the device under test (DUT) to its test socket<br />
and contacts is <strong>in</strong>dependent of the number of<br />
parallel test sites (multi-site test), and each<br />
Figure 1 · Comparison of test procedures with, and without, a probe tower.<br />
52 High <strong>Frequency</strong> Electronics
High <strong>Frequency</strong> Design<br />
WAFER PROBE TESTING<br />
test site has alignment features <strong>in</strong><br />
the socket that positions the packaged<br />
device with respect to the contacts.<br />
With wafer chip scale pack<strong>in</strong>g<br />
parallel test sites are no longer physically<br />
decoupled because they are all<br />
on the common wafer. Planarity and<br />
alignment errors become cumulative.<br />
Multi-site test is essential to<br />
obta<strong>in</strong><strong>in</strong>g optimal test economics.<br />
While multi-site probe has long been<br />
a solution for test<strong>in</strong>g pure digital and<br />
memory devices, complex analog and<br />
mixed-signal SOC devices add complexity<br />
to test floor management<br />
because these devices tend to be of<br />
lower volume and a greater variety.<br />
This leads to a higher frequency of<br />
reconfigur<strong>in</strong>g the test cell to accommodate<br />
the chang<strong>in</strong>g mix of device<br />
types. In order to obta<strong>in</strong> the efficiencies<br />
of multi-site test <strong>in</strong> the face of<br />
these challenges it is important to<br />
focus on these essential requirements<br />
of the test cell:<br />
1. Provide for m<strong>in</strong>imal signal path<br />
from <strong>in</strong>strument to DUT.<br />
2. Provide highly accurate and<br />
repeatable planarity alignment<br />
to support the requirements of<br />
membrane and f<strong>in</strong>e-pitch, highperformance<br />
probe technology.<br />
3. Provide for rapid changeover<br />
and setup of probe cards to m<strong>in</strong>imize<br />
down time <strong>in</strong> high mix,<br />
low volume production environments.<br />
It has been demonstrated that<br />
test cells can meet each of these<br />
requirements result<strong>in</strong>g <strong>in</strong><br />
changeover of probe cards, performed<br />
by an operator <strong>in</strong> a production environment,<br />
meet<strong>in</strong>g the required planarity,<br />
all <strong>in</strong> a matter of m<strong>in</strong>utes.<br />
Let’s consider each of these requirements.<br />
Figure 2 · Close-up photo of contacts<br />
on a test probe from<br />
Microprobe Inc.<br />
Figure 3 · Dies are accessed along<br />
a diagonal pattern.<br />
Signal Path<br />
In the past, wafer probe test <strong>in</strong>terfaces<br />
have been based on the use of a<br />
probe tower to provide flexible solutions<br />
to meet low-to-medium performance<br />
requirements. These solutions<br />
consist of a probe <strong>in</strong>terface board<br />
(PIB) that resides on the tester signal<br />
<strong>in</strong>terface and a probe tower that<br />
extends test signals from the PIB<br />
<strong>in</strong>to the prober to a probe card, which<br />
provides the needles to make contact<br />
with the wafer. These are lower cost<br />
solutions where only the probe card<br />
needs to be changed over to accommodate<br />
a different device. It also<br />
requires only reasonable mechanical<br />
accuracy for position<strong>in</strong>g the tester<br />
<strong>in</strong>terface to the plane of the wafer.<br />
The layer of mechanical decoupl<strong>in</strong>g<br />
provided by the probe tower comes at<br />
the price of extend<strong>in</strong>g signal path<br />
length between the tester <strong>in</strong>strumentation<br />
to the probe needles and<br />
add<strong>in</strong>g <strong>in</strong>terconnects, both of which<br />
can degrade electrical signal performance<br />
due to impedance discont<strong>in</strong>uities.<br />
Even though there is signal<br />
degradation, many analog signals<br />
can be addressed with calibration or<br />
error de-embedd<strong>in</strong>g techniques as is<br />
done with RF (radio frequency) signals.<br />
In comparison, digital signals<br />
can be sensitive to overall round-trip<br />
delay and are impacted by reflections<br />
at multiple <strong>in</strong>terconnect boundaries.<br />
Reflections at high data rates lead to<br />
<strong>in</strong>ter-symbol <strong>in</strong>terference and data<br />
dependent jitter of signal edges.<br />
These effects are much more difficult<br />
or impossible to remove and can only<br />
be controlled by reduc<strong>in</strong>g the overall<br />
path length and elim<strong>in</strong>at<strong>in</strong>g <strong>in</strong>terconnects.<br />
As high performance functional<br />
test moves to the probe environment<br />
and digital speeds cont<strong>in</strong>ue<br />
to <strong>in</strong>crease, the path effects become<br />
an unavoidable obstacle and a key<br />
limiter to signal performance.<br />
Towerless solutions m<strong>in</strong>imize these<br />
effects and come closest to the orig<strong>in</strong>al<br />
design <strong>in</strong>tent of the tester’s signal<br />
delivery system.<br />
Figure 4 · Summary of planarity requirements for three types of probes.<br />
54 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
WAFER PROBE TESTING<br />
Figure 5 · Photo of the wafer probe system hardware.<br />
Figure 6 · This diagram illustrates the reduction <strong>in</strong> complexity<br />
of the new prober system.<br />
Planarity<br />
High performance function test<br />
wafer probe requires a solution that<br />
overcomes issues of <strong>in</strong>terconnects<br />
and extended signal path lengths. For<br />
highest performance <strong>in</strong>to the gigahertz<br />
region, membrane probes have<br />
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proven to provide the best environment<br />
for controll<strong>in</strong>g impedance to<br />
with<strong>in</strong> 10s of µm of the die pad or solder<br />
ball. Other technologies such as<br />
pogo p<strong>in</strong>s, cobra probes or buckl<strong>in</strong>g<br />
column probes also can ma<strong>in</strong>ta<strong>in</strong><br />
very short lengths to m<strong>in</strong>imize <strong>in</strong>ductance<br />
and achieve best performance.<br />
In all cases the z-axis compliance of<br />
these short probes is limited, requir<strong>in</strong>g<br />
the probe <strong>in</strong>terface solution to<br />
have very high z-axis accuracy to stay<br />
with<strong>in</strong> the probes compliance range.<br />
Additionally, with <strong>in</strong>creas<strong>in</strong>g<br />
multi-site counts, access of the probes<br />
to the dies on the wafer dictates feasible<br />
probe patterns. It is optimal to<br />
arrange the probes such that dies are<br />
accessed along a diagonal pattern<br />
(see Fig. 1). While this maximizes the<br />
probe connection access, it spreads<br />
the test sites over a distance that is<br />
<strong>in</strong>creased by the √2 or 40% than if the<br />
sites were arranged <strong>in</strong> a direct row.<br />
However, a direct row arrangement<br />
severely limits probe access to the<br />
die. The z-axis planarity between the<br />
wafer (probe chuck) and the probe<br />
card must m<strong>in</strong>imize angular z-errors<br />
to accommodate the z-axis compliance<br />
of the probes themselves. The<br />
probe card alignment system must<br />
provide accurate, repeatable alignment<br />
as probe cards are rout<strong>in</strong>ely<br />
swapped out. The alignment system<br />
must assure rapid, consistent<br />
changeover <strong>in</strong> the production environment.<br />
It is also essential for the probe<br />
card and support<strong>in</strong>g mechanical<br />
structure to absorb the forces <strong>in</strong>troduced<br />
by the <strong>in</strong>creas<strong>in</strong>g probe count.<br />
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High <strong>Frequency</strong> Design<br />
WAFER PROBE TESTING<br />
If it is <strong>in</strong>sufficient, deflection will<br />
occur when probes are compressed<br />
when mak<strong>in</strong>g contact with the wafer.<br />
It is important that the support<br />
structure is both rigid and accurate<br />
so that proper contact force is made<br />
between the probes and the wafer.<br />
This force needs to be great enough to<br />
obta<strong>in</strong> the proper scrubb<strong>in</strong>g action to<br />
break through oxides on the contact<br />
surface. It is also important that<br />
excess contact force is not required to<br />
overcome planarity errors as the<br />
excess force may damage structures<br />
on the die beneath the pads or can<br />
excessively deform solder balls.<br />
By m<strong>in</strong>imiz<strong>in</strong>g the tolerance loop<br />
from tester to wafer, z-errors can be<br />
ma<strong>in</strong>ta<strong>in</strong>ed to 0.029 degrees, which is<br />
a factor of 2 better than what is<br />
required by multisite membrane<br />
probe solutions spann<strong>in</strong>g up to 8 die<br />
of 8 × 8 mm, and even better for pogo<br />
based solutions.<br />
Figure 7 · Diagram compar<strong>in</strong>g the old and new probe systems.<br />
Rapid Changeover<br />
In rout<strong>in</strong>e production, downtime<br />
is expensive, and unpredictable<br />
downtime is disruptive. Rout<strong>in</strong>e<br />
changeover of probe cards for a different<br />
device or for ma<strong>in</strong>tenance or<br />
repair must be quick to m<strong>in</strong>imize<br />
downtime. Thus, m<strong>in</strong>imiz<strong>in</strong>g the tolerance<br />
loop from probe tips to accuracy<br />
alignment features is essential to<br />
provide repeatable changeovers.<br />
To address this, the process of<br />
chang<strong>in</strong>g the probe card should allow<br />
the test system <strong>in</strong>terface to rema<strong>in</strong><br />
connected and aligned to the prober.<br />
A bottom-load<strong>in</strong>g scheme is used to<br />
manipulate the probe card <strong>in</strong>to place<br />
and align us<strong>in</strong>g unique alignment<br />
features <strong>in</strong> the design.<br />
A modified bottom load probe card<br />
changer can achieve this. The production<br />
floor operator can remove and<br />
replace probe cards <strong>in</strong> the changer’s<br />
load<strong>in</strong>g tray. From there the load<strong>in</strong>g<br />
operation is completely automated.<br />
The time required to place the probe<br />
card <strong>in</strong> the loader and have it planarized<br />
and locked <strong>in</strong> place is less<br />
than 5 m<strong>in</strong>utes.<br />
Summary<br />
In summary, the cost and performance<br />
requirements of semiconductor<br />
devices used <strong>in</strong> consumer mobile electronics<br />
and other applications demand<br />
greater functional density and lower<br />
cost devices. These requirements are<br />
addressed with wafer level chip scale<br />
packag<strong>in</strong>g. This <strong>in</strong> turn drives the need<br />
for full functional test at probe s<strong>in</strong>ce<br />
traditional package and f<strong>in</strong>al test is<br />
elim<strong>in</strong>ated from the manufactur<strong>in</strong>g<br />
process. The physical constra<strong>in</strong>ts <strong>in</strong>troduced<br />
by multi-site wafer level chip<br />
scale test<strong>in</strong>g has presented challenges<br />
to traditional techniques used for<br />
<strong>in</strong>terfac<strong>in</strong>g the test system to the<br />
wafer prober. Innovative solutions that<br />
focus on reduc<strong>in</strong>g error sources and<br />
simplify tolerance loops can reliably<br />
and economically meet today’s challenges<br />
at the performance levels<br />
required to test today’s and tomorrow’s<br />
complex semiconductor devices.<br />
Author Information<br />
John Whittaker, Interface Products<br />
Market<strong>in</strong>g Manager, Global Services<br />
Organization at Teradyne. The 20-year<br />
veteran of the ATE <strong>in</strong>dustry has a<br />
background <strong>in</strong> memory and digital<br />
test, statistical analysis software, and<br />
is currently focused on SOC signal<br />
delivery. Mr. Whittaker graduated<br />
from Worcester Polytechnic Institute<br />
with a B.S.E.E. Teradyne, Inc., 600<br />
Riverpark Drive, North Read<strong>in</strong>g, MA,<br />
01864, email: john.whittaker@teradyne.com.<br />
Other contributors to the article<br />
<strong>in</strong>clude Roger Burns, previously<br />
Market<strong>in</strong>g Applications Manager,<br />
Teradyne; Dan Watson, Mechanical<br />
Eng<strong>in</strong>eer, Global Services Organization,<br />
Teradyne. He has created <strong>in</strong>novative<br />
mechanical, electrical, and signal<br />
delivery <strong>in</strong>terface solutions for many<br />
of Teradyne’s semiconductor test<strong>in</strong>g<br />
products; Kirk Pitta, Applications<br />
Eng<strong>in</strong>eer, Global Services Organization,<br />
Test Cell Group at Teradyne.<br />
He has worked <strong>in</strong> design eng<strong>in</strong>eer<strong>in</strong>g,<br />
Japan field applications and factory<br />
applications roles for the Test Cell<br />
Group. Mr. Pitta holds a B.S. <strong>in</strong><br />
Mechanical Eng<strong>in</strong>eer<strong>in</strong>g and a M.S. <strong>in</strong><br />
Mechanical Eng<strong>in</strong>eer<strong>in</strong>g from<br />
Northeastern University.<br />
58 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
CONNECTORS ON PCBs<br />
RF/<strong>Microwave</strong> Connectors<br />
on Pr<strong>in</strong>ted Circuit Boards<br />
By Gary Breed<br />
Editorial Director<br />
When mount<strong>in</strong>g<br />
This month’s tutorial takes a<br />
an RF/microwave<br />
or high<br />
look at the practical matter<br />
of characteriz<strong>in</strong>g, then speed digital connector to<br />
<strong>in</strong>stall<strong>in</strong>g, an RF connector a pr<strong>in</strong>ted circuit board,<br />
on a pr<strong>in</strong>ted circuit board the transition from the<br />
connector body and <strong>in</strong>ner<br />
conductor p<strong>in</strong> to the pr<strong>in</strong>ted traces is often the<br />
source of excessive mismatch. The discont<strong>in</strong>uity<br />
<strong>in</strong> size, shape and surround<strong>in</strong>g conductors<br />
results <strong>in</strong> an area with a characteristic<br />
impedance that can be much different (usually<br />
lower) that the system impedance of 50<br />
ohms (RF/microwave) or 75 ohms (data or<br />
video).<br />
An additional challenge is the transition<br />
from the round coaxial structure of cables and<br />
their connectors, to the planar stripl<strong>in</strong>e or<br />
microstrip structure of signal paths on a p.c.<br />
board. The connector shown <strong>in</strong> Figure 1<br />
demonstrates one approach to solv<strong>in</strong>g the<br />
problem. The connector body is designed to<br />
m<strong>in</strong>imize the VSWR “bump” caused by the<br />
change from coaxial to planar transmission<br />
l<strong>in</strong>es, but the p<strong>in</strong> that is soldered to the board<br />
has as added vertical thickness, and almost<br />
always will require a solder pad that is wider<br />
than a stripl<strong>in</strong>e with the desired characteristic<br />
impedance.<br />
Reference [1] offers a good description of<br />
the problem and typical solutions. Although<br />
the author covers the issue from the perspective<br />
of 75 ohm BNC connectors, the <strong>in</strong>formation<br />
applies to 50 ohm systems and other connectors,<br />
as well. As shown <strong>in</strong> Figures 2 and 3<br />
on the next page, one solution is to modify the<br />
ground metal layer under, and adjacent to, the<br />
connector. Wider spac<strong>in</strong>g between the signal<br />
conductor and the ground/shield conductors<br />
Figure 1 · Connectors must provide a transition<br />
from a round coaxial transmission l<strong>in</strong>e<br />
to the planar microstrip or stripl<strong>in</strong>e structure<br />
of a p.c. board.<br />
<strong>in</strong>creases the characteristic impedance <strong>in</strong> the<br />
area where the required solder pad is much<br />
wider than a normal 75-ohm microstrip l<strong>in</strong>e.<br />
Figure 2 illustrates the problem by show<strong>in</strong>g<br />
the relative widths of the solder pad and<br />
microstrip l<strong>in</strong>es on the top metal layer. Figure<br />
3 shows how the top metal and the metal of<br />
the next lower layer are modified to create a<br />
region with higher characteristic impedance.<br />
An alternate solution is to mechanically<br />
mach<strong>in</strong>e the p.c board to create an air space<br />
adjacent to the solder pad. This lowers the<br />
effective dielectric constant of this part of the<br />
board, which will <strong>in</strong>crease the characteristic<br />
impedance without chang<strong>in</strong>g the pad and<br />
trace widths.<br />
Top-mounted connectors present a different<br />
set of structural variations that affect the<br />
impedance match between the connector and<br />
the p.c. board traces. This type of mount<strong>in</strong>g<br />
offers greater mechanical strength than edgemount<strong>in</strong>g,<br />
and is the only option for <strong>in</strong>stall<strong>in</strong>g<br />
connectors <strong>in</strong> locations other than at the edge<br />
of a board.<br />
60 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Design<br />
CONNECTORS ON PCBs<br />
Figure 2 · Cross-section of a p.c. board “land<strong>in</strong>g pad”<br />
area for an edge-mounted BNC connector, with no<br />
compensation for impedance mispatch (adapted from<br />
Ref. [1].<br />
Figure 3 · Cross-section of a p.c. board “land<strong>in</strong>g pad”<br />
area for an edge-mounted BNC connector, with the<br />
ground metallization modified to provide an improved<br />
match to a 75 ohm (adapted from Ref. [1].<br />
Surface-mount connectors will<br />
perform similarly to edge-mounted<br />
connectors, with round-to-planar<br />
transitions and impedance variations<br />
due to solder pad size. However,<br />
through-hole mounted connectors<br />
must have vias to provide both signal<br />
and ground connections. As shown <strong>in</strong><br />
Figure 4, the length of the via has an<br />
<strong>in</strong>ductance, and the gap between the<br />
via and <strong>in</strong>terven<strong>in</strong>g metal layers has<br />
a capacitance. The average values<br />
will determ<strong>in</strong>e the characteristic<br />
impedance of the via “tube,” but the<br />
layered structure means that the<br />
impedance will vary along the length<br />
of the via.<br />
If the space between the layers is<br />
small relative to the wavelength of<br />
the highest frequency desired signals,<br />
the variation will have little<br />
effect on performance. But as fre-<br />
Top View<br />
Capacitance<br />
between via<br />
wall and each<br />
layer’s metal<br />
Cross-section View<br />
Figure 4 · Thru-hole, top-mounted connectors have an impedance that is<br />
affected by vias, mid layers and metal layers of the p.c. board.<br />
C<br />
C<br />
C<br />
C<br />
L<br />
C<br />
C<br />
C<br />
C<br />
Inductance<br />
due to length<br />
and diameter<br />
of tubular via<br />
quency <strong>in</strong>creases, the effects will<br />
become <strong>in</strong>creas<strong>in</strong>gly apparent as<br />
<strong>in</strong>creased VSWR and its attendant<br />
loss, and time-doma<strong>in</strong> reflections<br />
that can affect the modulated waveform<br />
of RF signals, or the waveform<br />
shape (and eye closure) of high speed<br />
digital signals.<br />
At 2.45 GHz, with typical FR-4<br />
material dielectric constant of<br />
approximately 4.4, the thickness of a<br />
p.c. board is <strong>in</strong> the range of 1/17<br />
wavelength. At this frequency, problems<br />
would not be significant.<br />
However, a common rule of thumb is<br />
that wavelength-related problems<br />
will arise when dimensions are <strong>in</strong> the<br />
range of λ/10. As the operat<strong>in</strong>g frequency<br />
rises above 2.45 GHz, designers<br />
should be prepared to implement<br />
compensat<strong>in</strong>g techniques to avoid<br />
performance issues with throughhole<br />
connectors.<br />
Of course, the magnitude of the<br />
problems will vary with the connector<br />
type and mount<strong>in</strong>g method as<br />
well. Well designed and precision<br />
manufactured surface-mount connectors<br />
are available with performance<br />
specified <strong>in</strong>to the tens of GHz.<br />
Summary<br />
At high frequencies and fast edge<br />
rates, the <strong>in</strong>terface between an<br />
RF/microwave or high speed digital<br />
connector and the pr<strong>in</strong>ted circuit<br />
board can be the most critical location<br />
<strong>in</strong> the signal path. Designers<br />
must be aware of the potential problems<br />
that can arise, and be prepared<br />
to use appropriate techniques to prevent<br />
their occurrence.<br />
References<br />
1. T-K Ch<strong>in</strong>, National Semiconductor<br />
Corp., “Optimiz<strong>in</strong>g BNC PCB<br />
Footpr<strong>in</strong>t Designs for Digital Video<br />
Equipment,” available at: www.<br />
samtec.com/technicallibrary/<br />
white_papers.aspx<br />
2. “PCB Design Guide,” Trompeter<br />
Electronics, (available from several<br />
sources—do an Internet search by<br />
title + Trompeter)<br />
3. S. McMorrow, J. Bell, J. Ferry, “A<br />
Solution for the Design, Simulation<br />
and Validation of Board-to-Board<br />
Interconnects,” High <strong>Frequency</strong> Electronics,<br />
Jan. 2005.<br />
62 High <strong>Frequency</strong> Electronics
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High <strong>Frequency</strong> Products<br />
NEW LITERATURE<br />
Full-L<strong>in</strong>e Product Catalog<br />
AR RF/<strong>Microwave</strong> Instrumentation<br />
has unveiled its latest corporate<br />
product catalog, now available<br />
<strong>in</strong> either CD form or as a hard copy<br />
catalog. Significant <strong>in</strong>novations, as<br />
well as the company’s core products—such<br />
as amplifiers, amplifier<br />
systems, complete EMC test<strong>in</strong>g<br />
solutions, antennas, field probes,<br />
and more—are <strong>in</strong>cluded. The<br />
Virtual CD provides a comprehensive<br />
overview of AR products,<br />
<strong>in</strong>clud<strong>in</strong>g data sheets, application<br />
notes, ads, press releases, EMC<br />
equations and conversion charts,<br />
plus the company's new full l<strong>in</strong>e<br />
catalog. The hard copy catalog features<br />
AR RF/<strong>Microwave</strong> Instrumentation<br />
products along with sections<br />
cover<strong>in</strong>g AR Modular RF, AR<br />
Receiver Systems, and AR Europe.<br />
To receive a free copy of either the<br />
AR catalog or CD, go to the comapny<br />
web site.<br />
AR RF/<strong>Microwave</strong> Instrumentation<br />
www.arworld.us/html/02000.asp<br />
Envelope Track<strong>in</strong>g Interface<br />
Specification Document<br />
The OpenET Alliance, the not-forprofit<br />
organization that promotes<br />
energy efficient wireless transmission<br />
through Envelope Track<strong>in</strong>g,<br />
today announced that it has<br />
released a new API specification<br />
for 4G handsets to support further<br />
<strong>in</strong>dustry collaboration. Envelope<br />
Track<strong>in</strong>g is the most effective<br />
wide-band power optimization<br />
technology for the RF front end of<br />
3G and 4G handsets. The release<br />
64 High <strong>Frequency</strong> Electronics<br />
of this API will simplify collaboration<br />
among semiconductor vendors,<br />
OEMs and EDA providers<br />
through the complete development<br />
lifecycle of Envelope Track<strong>in</strong>g solutions<br />
for 3G and 4G handsets, from<br />
early design and prototyp<strong>in</strong>g<br />
through to mass production. The<br />
API document builds on the widely<br />
adopted OpenET hardware <strong>in</strong>terface<br />
specifications for term<strong>in</strong>als. It<br />
def<strong>in</strong>es an implementation-<strong>in</strong>dependent<br />
software <strong>in</strong>terface<br />
between the high level calibration,<br />
configuration and control functionality<br />
required for Envelope<br />
Track<strong>in</strong>g and the low level<br />
transceiver and modulator hardware<br />
blocks. The new API is freely<br />
available to all members of the<br />
OpenET Alliance. Membership is<br />
available on the OpenET website.<br />
OpenET Alliance<br />
www.open-et.org<br />
Application Note on<br />
Validation of LTE Devices<br />
Agilent’s Power of X application<br />
notes provide <strong>in</strong>sight <strong>in</strong>to solv<strong>in</strong>g<br />
tough measurement problems <strong>in</strong> a<br />
unique way for both the design and<br />
manufactur<strong>in</strong>g environments. The<br />
new 5990-8898EN, “Solutions for<br />
Validation of LTE Devices–Test<strong>in</strong>g<br />
MIMO Over-the-Air Us<strong>in</strong>g the<br />
Two-Stage Method” offers <strong>in</strong>sights<br />
<strong>in</strong>to cost-effective ways to validate<br />
LTE devices dur<strong>in</strong>g development.<br />
Agilent’s X Series products help<br />
eng<strong>in</strong>eers br<strong>in</strong>g <strong>in</strong>novative, higherperform<strong>in</strong>g<br />
products to emerg<strong>in</strong>g<br />
markets around the globe. Copies<br />
of the application notes are available<br />
at the company web site.<br />
There is no cost, but registration is<br />
required.<br />
Agilent Technologies<br />
www.agilent.com/f<strong>in</strong>d/powerofx<br />
CD Collection of Measurement<br />
Web<strong>in</strong>ars<br />
Keithley Instruments Inc. offers a<br />
new CD, “Characteriz<strong>in</strong>g Nanomaterials<br />
and Devices with<br />
Precision and Confidence,” conta<strong>in</strong><strong>in</strong>g<br />
the follow<strong>in</strong>g web<strong>in</strong>ars on<br />
low level measurement techniques<br />
for characteriz<strong>in</strong>g nano materials:<br />
· How to Get the Most from Your<br />
Low Current Measurement<br />
Instruments<br />
· How to Make Electrical<br />
Resistivity Measurements of Bulk<br />
Materials: Conductors, Insulators,<br />
and Semiconductors<br />
· Hall Effect Measurements Fundamentals<br />
· Give Your Microscope a Hand:<br />
Characterization of Nano<br />
Structures<br />
· Understand<strong>in</strong>g Electrical<br />
Characterization of Pr<strong>in</strong>ted and<br />
Organic Electronics and Materials<br />
· How to Avoid Self-Heat<strong>in</strong>g Effects<br />
on Nanoscale Devices<br />
· Advanced Particle Beam Methods<br />
for Nano-characterization and<br />
Analysis<br />
· Electronic Properties of Z<strong>in</strong>c-<br />
Blende Wurtzite Biphasic Gallium<br />
Nitride Nanowires and NanoFETs<br />
· In-situ Correlation of Mechanical<br />
Properties, Deformation Behavior,<br />
and Electrical Characteristics of<br />
Materials Us<strong>in</strong>g Conductive<br />
Nano<strong>in</strong>dentation<br />
· Measurement Needs <strong>in</strong> Nano-<br />
Architectonics<br />
The CD is available onl<strong>in</strong>e at the<br />
Keithley web site.<br />
Keithley Instruments Inc.<br />
www.keithley.com
Ultra Low Noise Amplifiers (LNAs)<br />
Select LNAs Available from Stock for Prototype or High-Volume Production<br />
■ Excellent Noise Figure, as Low as 0.50 dB<br />
■ Unconditional Stablity Match<strong>in</strong>g Circuits<br />
■ Temperature-Stable Performance<br />
■ Low Cost, Small Form Factor Packag<strong>in</strong>g<br />
■ Narrow and Broadband Options<br />
■ High L<strong>in</strong>earity and Adjustable Ga<strong>in</strong> Designs<br />
<br />
Part Number<br />
New Products<br />
Application<br />
<strong>Frequency</strong><br />
Range<br />
(MHz)<br />
Test<br />
<strong>Frequency</strong><br />
(MHz)<br />
Ga<strong>in</strong><br />
(dB)<br />
NF<br />
(dB)<br />
OIP3<br />
(dBm)<br />
OP 1 dB<br />
(dBm)<br />
V DD<br />
(V)<br />
(Operat<strong>in</strong>g<br />
Range)<br />
I DD<br />
(mA)<br />
(Operat<strong>in</strong>g<br />
Range)<br />
Package<br />
(mm)<br />
SKY67101-396LF<br />
Cellular<br />
Infrastructure<br />
400–1200 900 17.5 0.57 34 19 4<br />
(3.3–5.0)<br />
54<br />
(20–90)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY67100-396LF<br />
Cellular<br />
Infrastructure<br />
1200–2300 1950 17.5 0.7 34 18.5 4<br />
(3.3–5.0)<br />
55<br />
(20–90)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY67102-396LF<br />
Cellular<br />
Infrastructure<br />
2000–3000 2600 17.2 0.8 34 15 4<br />
(3.3–5.0)<br />
50<br />
(20–90)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY67001-396LF<br />
Cellular<br />
Infrastructure<br />
700–1000 900 17.5 0.6 40.5 21 5<br />
(3.3–5.0)<br />
100<br />
(50–120)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY67002-396LF<br />
Cellular<br />
Infrastructure<br />
1600–2100 1950 17.5 0.65 39.5 20 5<br />
(3.3–5.0)<br />
95<br />
(50–120)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY67105-306LF<br />
Cellular<br />
Infrastructure<br />
600–1100 850 37 0.7 41 26 5<br />
(3.5–5.0)<br />
140<br />
(120–155)<br />
QFN 16L<br />
4 x 4 x 0.90<br />
SKY67106-306LF<br />
Cellular<br />
Infrastructure<br />
1500–3000 1950 35 0.65 37 24 5<br />
(3.5–5.0)<br />
100<br />
(80–125)<br />
QFN 16L<br />
4 x 4 x 0.90<br />
SKY67014-396LF General Purpose 1500–3000 2450 13 0.95 26 15 3.3<br />
(1.8–5.0)<br />
15<br />
(5–30)<br />
DFN 8L<br />
2 x 2 x 0.75<br />
SKY65047-360LF<br />
GPS and<br />
ISM Band<br />
400–3000 1575 16.6 0.8 19.5 0 3.3<br />
(2.7–3.8)<br />
7<br />
(6.5–7.5)<br />
DFN 8L<br />
2 x 2 x 0.90<br />
SKY65050-372LF<br />
Broadband Low<br />
Noise FET<br />
450–6000 2400 15.5 0.65 23.5 10.5 3<br />
(2.7–3.8)<br />
20<br />
(5–55)<br />
SC-70 4L<br />
2.2 x 1.35 x 1.1<br />
SKY65404-31<br />
5.8 GHz WLAN<br />
and ISM Band<br />
4900–5900 5800 13 1.2 20 9 3.3<br />
(2.8–5.0)<br />
11<br />
(10–15)<br />
DFN 6L<br />
1.5 x 1.5 x 0.45<br />
SKY65405-21<br />
2.4 GHz WLAN<br />
and ISM Band<br />
2400–2500 2450 15 1.1 24 15 3.3<br />
(2.8–5.0)<br />
12<br />
(10–16)<br />
DFN 6L<br />
1.5 x 1.5 x 0.45<br />
Skyworks Green products are compliant to all applicable materials legislation and are halogen-free. For additional <strong>in</strong>formation, refer to Skyworks Def<strong>in</strong>ition of Green, document number SQ04-0074.<br />
Samples and Evaluation Boards Available at www.skyworks<strong>in</strong>c.com
High <strong>Frequency</strong> Products<br />
NEW LITERATURE<br />
Wireless Backhaul<br />
Application Profile<br />
Anatech Electronics announces the<br />
availability of an application profile<br />
that details the vital role filters<br />
play <strong>in</strong> backhaul of wireless systems<br />
from cell sites to fiber nodes<br />
or carrier’s central location.<br />
Provid<strong>in</strong>g backhaul for third-and<br />
fourth-generation wireless systems<br />
has become one of the greatest<br />
issues fac<strong>in</strong>g wireless carriers as<br />
data rates dramatically <strong>in</strong>crease as<br />
a result of high-speed wireless<br />
access methods such as HSPA+,<br />
LTE, and WiMAX. <strong>Microwave</strong><br />
po<strong>in</strong>t-to-po<strong>in</strong>t l<strong>in</strong>ks are prov<strong>in</strong>g to<br />
be a cost-effective solution. As<br />
always, <strong>in</strong>terference is always an<br />
issue, and cavity filters can play a<br />
vital role <strong>in</strong> elim<strong>in</strong>at<strong>in</strong>g it <strong>in</strong> both<br />
new and exist<strong>in</strong>g <strong>in</strong>stallations.<br />
“The Importance of Filters <strong>in</strong><br />
Po<strong>in</strong>t-to-Po<strong>in</strong>t <strong>Microwave</strong> Cellular<br />
Backhaul Networks” provides useful<br />
<strong>in</strong>formation for anyone<br />
<strong>in</strong>volved <strong>in</strong> the <strong>in</strong>stallation and<br />
ma<strong>in</strong>tenance of these systems. It is<br />
available onl<strong>in</strong>e as a PDF file.<br />
Anatech Electronics<br />
www.anatechelectronics.com<br />
and, www.amcrf.com<br />
New Power Source Web Site<br />
Versatile Power, Inc. has<br />
announced their new, expanded<br />
Website. The new Website provides<br />
ease of use for visitors want<strong>in</strong>g to<br />
learn about the Company’s broad<br />
offer<strong>in</strong>gs of custom design and<br />
manufactur<strong>in</strong>g services for medical,<br />
semiconductor, ultrasonic,<br />
light<strong>in</strong>g, government lab,<br />
aerospace, military and <strong>in</strong>dustrial<br />
applications. For customers seek<strong>in</strong>g<br />
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designs for applications of RF, DC,<br />
ultrasonics and lasers, Versatile<br />
Power’s new Website offers multiple<br />
quick l<strong>in</strong>ks <strong>in</strong>clud<strong>in</strong>g: power<br />
supply and controller design solutions,<br />
highly successful case histories,<br />
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lead<strong>in</strong>g-edge electronic subsystem<br />
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<strong>in</strong>clud<strong>in</strong>g ISO 9001-2000<br />
and 13485-2003.<br />
Versatile Power, Inc.<br />
www.versatilepower.com<br />
Global BTS Antenna Report<br />
The global BTS antenna market<br />
decl<strong>in</strong>ed by 16.3 % <strong>in</strong> 2010, accord<strong>in</strong>g<br />
to the latest report from EJL<br />
Wireless Research titled “Global<br />
BTS Antenna Market Analysis and<br />
Forecast, 2010-2015 3rd Edition.”<br />
The market cont<strong>in</strong>ues to shift<br />
away from s<strong>in</strong>gle band sectorized<br />
panel antennas to multi band<br />
antennas. As a result, multi-band<br />
antennas reached nearly 28% of<br />
the overall mix, compared with<br />
10% <strong>in</strong> 2009. Multi-band BTS<br />
antennas grew 128% year over<br />
year and are expected to <strong>in</strong>crease<br />
by another 50% through 2013.<br />
Information for purchase of the full<br />
report is available onl<strong>in</strong>e.<br />
EJL Wireless Research<br />
www.ejlwireless.com<br />
Laboratory<br />
(RF)MicroProbe<br />
Station<br />
Extremely Low Cost<br />
< $10,000 US<br />
DC/RF/<strong>Microwave</strong> Test<br />
A ultra compact, manually operated probe station for eng<strong>in</strong>eers,<br />
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nanoelectronic components and assemblies.<br />
• Benchtop Size(1ft 2 ) • 2” Vacuum chuck with pump• 1” X-Y-Ø stage with z-lift•<br />
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•10X/30X Stereo Zoom Tr<strong>in</strong>ocular Microscope • Flourescent Illum<strong>in</strong>ator •<br />
•Compatible with additional Magnetic Mount Positioners(optional)•<br />
•Compatible with <strong>in</strong>dustry standard microwave probes(optional)•<br />
•Cost effective for research projects•<br />
J micro Technology<br />
J microTechnology<br />
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Portland, OR 97229<br />
(503) 614-9509<br />
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Research Performance / Student Price<br />
66 High <strong>Frequency</strong> Electronics<br />
ProbePo<strong>in</strong>t CPW-μStrip<br />
Adapter Substrates<br />
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•Precision CPW to μStrip Adapter Substrates•<br />
•Companion Calibration Substrates and Standards•<br />
•Standard & custom Carriers•<br />
•Accurate Electrical Data to Frequencies >50 GHz•<br />
• 5,10,& 15 mil thickness•<br />
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•Standard and Custom Calibration Standards•<br />
J micro Technology<br />
FET<br />
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J microTechnology<br />
3744 NW Bluegrass Pl<br />
Portland, OR 97229<br />
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www.jmicrotechnology.com<br />
Test Tool<strong>in</strong>g for the Untestable<br />
Get <strong>in</strong>fo at www.HFel<strong>in</strong>k.com<br />
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Measure <strong>Microwave</strong>, RF and DC parameters of Semiconductor Devices,<br />
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• Benchtop Size(
www.highfrequencyelectronics.com<br />
High <strong>Frequency</strong> Electronics magaz<strong>in</strong>e<br />
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· Conference and short course calendar<br />
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· Onl<strong>in</strong>e Edition (PDF) identical to pr<strong>in</strong>t edition<br />
www.highfrequencyelectronics.com<br />
Use onl<strong>in</strong>e ads for a comb<strong>in</strong>ed onl<strong>in</strong>e-pr<strong>in</strong>t presence<br />
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tutorials, editorials<br />
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Special Services<br />
Use our expertise <strong>in</strong> pr<strong>in</strong>t and electronic media<br />
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· Other needs? Just ask!<br />
Our Advertis<strong>in</strong>g Pros:<br />
ADVERTISING SALES — EAST COAST<br />
Gary Rhodes<br />
Tel: 631-274-9530, Fax: 631-667-2871<br />
grhodes@highfrequencyelectronics.com<br />
ADVERTISING SALES — WEST<br />
Tim Burkhard<br />
Tel: 707-544-9977, Fax: 707-544-9375<br />
tim@highfrequencyelectronics.com<br />
ADVERTISING SALES — CENTRAL<br />
Keith Neighbour<br />
Tel: 773-275-4020, Fax: 773-275-3438<br />
keith@highfrequencyelectronics.com<br />
PUBLISHER — OTHER REGIONS & INTERNATIONAL<br />
Scott Spencer<br />
Tel: 603-472-8261, Fax: 603-471-0716<br />
scott@highfrequencyelectronics.com
High <strong>Frequency</strong> Products<br />
NEW PRODUCTS<br />
Diversity Switches<br />
Skyworks has <strong>in</strong>troduced two double-pole,<br />
double-throw (DPDT)<br />
diversity switches <strong>in</strong> <strong>in</strong>dustry<br />
standard packag<strong>in</strong>g and footpr<strong>in</strong>t.<br />
The SKY13355-374LF is a lowpower<br />
variant switch designed for<br />
2.4 and 6.0 GHz, dual-band wireless<br />
LAN applications. Switch<strong>in</strong>g is<br />
controlled by two voltage <strong>in</strong>puts<br />
(V1 and V2). Depend<strong>in</strong>g on the<br />
logic voltage level applied to the<br />
control p<strong>in</strong>s, the ANT1 and ANT2<br />
p<strong>in</strong>s connect to one of two switched<br />
RF outputs (RX or TX) through a<br />
low <strong>in</strong>sertion loss path while ma<strong>in</strong>ta<strong>in</strong><strong>in</strong>g<br />
a high isolation path to the<br />
alternate port. The SKY13381-<br />
374LF is a higher P 1dB<br />
version for<br />
higher l<strong>in</strong>earity applications (<strong>in</strong><br />
the same p<strong>in</strong>out). The switches are<br />
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and WLAN customer premise and<br />
<strong>in</strong>frastructure equipment given<br />
their p<strong>in</strong>-to-p<strong>in</strong> compatibility with<br />
high- and low-power devices.<br />
Skyworks Solutions, Inc.<br />
www.skyworks<strong>in</strong>c.com<br />
Fixed <strong>Frequency</strong> Synthesizer<br />
Z-Communications, Inc. announces<br />
a new RoHS compliant fixed frequency<br />
synthesizer model<br />
SFS1900A-LF <strong>in</strong> L-band. This is a<br />
s<strong>in</strong>gle frequency synthesizer that<br />
operates at 1900 MHz. It features<br />
a typical phase noise of –98 dBc/Hz<br />
at 10 kHz offset and typical sideband<br />
spurs of –70 dBc. The<br />
SFS1900A-LF is designed to deliver<br />
a typical output power of 0 dBm<br />
Integer-N Synthesizers<br />
L<strong>in</strong>ear Technology announces the<br />
LTC6946, the first device <strong>in</strong> a family<br />
of high performance <strong>in</strong>teger-N frequency<br />
synthesizers with <strong>in</strong>tegrated<br />
VCO, deliver<strong>in</strong>g –226 dBc/Hz normalized<br />
closed-loop <strong>in</strong>-band phase<br />
noise, superior –274 dBc/Hz normalized<br />
<strong>in</strong>-band 1/f noise, and –103 dBc<br />
spurious output. In a typical<br />
900 MHz application, these performance attributes help to achieve a<br />
closed-loop phase noise of –100 dBc/Hz at 1 kHz offset. The device is<br />
available <strong>in</strong> three frequency options: the LTC6946-1 tunes from 2.240 to<br />
3.740 GHz; the LTC6946-2 from 3.080 to 4.910 GHz; and the LTC6946-3<br />
covers 3.840 to 5.790 GHz. In addition, each part has an on-chip output<br />
divider that is programmable from 1 through 6 to extend frequency coverage<br />
to as low as 373 MHz. This family of devices <strong>in</strong>tegrates a low noise<br />
5.7 GHz phase-locked loop (PLL), which <strong>in</strong>cludes a reference divider,<br />
phase-frequency detector (PFD) with phase-locked <strong>in</strong>dicator, ultralow<br />
noise charge pump, and <strong>in</strong>teger feedback divider to atta<strong>in</strong> very low noise<br />
PLL operation. The PLL circuit is tightly coupled to a low noise VCO as<br />
well as <strong>in</strong>ternal self-calibration to ensure optimum VCO resonator tun<strong>in</strong>g<br />
for best phase noise performance. The VCO requires no external components.<br />
The on-chip SPI compatible bidirectional serial port allows frequency<br />
tun<strong>in</strong>g and control, and read back of register and loop status<br />
<strong>in</strong>formation.<br />
L<strong>in</strong>ear Technology<br />
www.l<strong>in</strong>ear.com<br />
with a VCO voltage supply of 5 Vdc<br />
while draw<strong>in</strong>g 25 mA (typical) and<br />
a phase locked loop voltage of 3.3<br />
Vdc while draw<strong>in</strong>g 10 mA (typical)<br />
over the temperature range of –40º<br />
to 85ºC. It features typical 2nd harmonic<br />
suppression of –20 dBc and<br />
comes <strong>in</strong> Z-Comm’s <strong>in</strong>dustry standard<br />
PLL-V12N package measur<strong>in</strong>g<br />
0.60 × 0.60 × 0.13 <strong>in</strong>. It is available<br />
<strong>in</strong> tape and reel packag<strong>in</strong>g for<br />
production requirements<br />
Z-Communications, Inc.<br />
www.zcomm.com<br />
TO-8 VCO<br />
Crystek’s CVCOT8BE-0800-1600<br />
TO-8 VCO (voltage controlled oscillator)<br />
operates from 800 to 1600<br />
MHz and provides high-performance<br />
frequency control <strong>in</strong> harsh,<br />
demand<strong>in</strong>g environments. These<br />
VCOs feature a typical phase noise<br />
of –92 dBc/Hz at 10 kHz offset.<br />
Tun<strong>in</strong>g sensitivity is rated at 79<br />
MHz/V. Pull<strong>in</strong>g and Push<strong>in</strong>g are<br />
m<strong>in</strong>imized to 20.0 MHz and 4.0<br />
MHz/V, respectively; second harmonic<br />
suppression is –10 dBc typical.<br />
The CVCOT8BE l<strong>in</strong>e features<br />
a full-function<strong>in</strong>g VCO <strong>in</strong> a rugged,<br />
hermetically sealed TO-8 package<br />
to protect the VCO from moisture,<br />
contam<strong>in</strong>ants and other elements.<br />
The metal-can construction features<br />
gold plated p<strong>in</strong>s with no<br />
<strong>in</strong>ternal wire bonds for enhanced<br />
signal <strong>in</strong>tegrity.<br />
Crystek Corporation<br />
www.crystek.com<br />
RF Downconverter<br />
SignalCore has just announced the<br />
release of a broadband RF downconverter.<br />
With frequency range of<br />
20 MHz to 1.3 GHz, this downconverter<br />
is available <strong>in</strong> three form<br />
factors—USB, PXI, and a core<br />
module for OEM use and customized<br />
system <strong>in</strong>tegration. It uses<br />
68 High <strong>Frequency</strong> Electronics
INCREDIBLE<br />
HXG AMPLIFIERS<br />
IP3 +46 dBm!<br />
P1dB +23 dBm 5V @ 146 mA<br />
<br />
M<strong>in</strong>i-Circuits System In Package<br />
50 <strong>in</strong>/out...no match<strong>in</strong>g required<br />
Outstand<strong>in</strong>g IP3, at low DC power. M<strong>in</strong>i-Circuits HXG<br />
amplifiers feature an eye-popp<strong>in</strong>g IP3 of +46 dBm, at only<br />
730 mW DC power. A typical ga<strong>in</strong> of 15 dB, output power of<br />
23 dBm, and an IP3/P1dB ratio of 23 dB make them very useful<br />
for output stage amplifiers. All this, and surpris<strong>in</strong>gly low noise<br />
figures (2.4 dB) extend their usefulness to receiver front-end<br />
circuitry! All <strong>in</strong> all, the HXG family delivers <strong>in</strong>credible performance<br />
with less heat dissipation, for greater reliability and a longer life.<br />
MSiP br<strong>in</strong>gs it all together. Our exclusive M<strong>in</strong>i-Circuits System<br />
<strong>in</strong> Package techniques utilize load-pull technology and careful<br />
impedance match<strong>in</strong>g to reach new levels of performance<br />
0.25 x 0.27 x 0.09"<br />
with<strong>in</strong> a t<strong>in</strong>y 6.4 x 6.9 mm footpr<strong>in</strong>t. Input and output ports<br />
matched to 50 elim<strong>in</strong>ate the need for external components<br />
and additional PCB space! Bottom-l<strong>in</strong>e, you get outstand<strong>in</strong>g<br />
performance, with built-<strong>in</strong> sav<strong>in</strong>gs that really add up.<br />
Our first two HXG models are optimized for low ACPR at<br />
cellular frequencies of 700-900 MHz and 1.7-2.2 GHz. They’re<br />
also ideal for applications <strong>in</strong> high-EMI environments and <strong>in</strong>strumentation,<br />
where low distortion is essential. HXG performance<br />
is only available at M<strong>in</strong>i-Circuits, and our new models are ready<br />
to ship today, so act now and see what they can do for you!<br />
Model Freq Ga<strong>in</strong> P1dB NF IP3 Price<br />
(GHz) (typ) ( typ) (typ ) (typ ) (qty. 1000)<br />
HXG-122+ 0.5-1.2 15 dB 23 dBm 2.2 47 $ 2.75<br />
HXG-242+ 0.7-2.4 15 dB 23 dBm 2.4 46 $ 2.75<br />
See m<strong>in</strong>icircuits.com for specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />
M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />
$<br />
2 75<br />
from ea.(qty.1000)<br />
®<br />
U.S. Patents<br />
7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
IF/RF MICROWAVE COMPONENTS<br />
492 rev. A
High <strong>Frequency</strong> Products<br />
NEW PRODUCTS<br />
fast VCO tun<strong>in</strong>g, exhibits low<br />
phase noise, and has wide dynamic<br />
range. SignalCore’s USB-controlled<br />
SC5301A RF downconverter<br />
comes <strong>in</strong> a compact 1U form factor<br />
that is convenient for benchtop<br />
use, or can be rack-mounted with<br />
one of SignalCore’s standard<br />
mount<strong>in</strong>g kits.<br />
SignalCore<br />
www.signalcore.com<br />
GaAs MMIC SPDT Switches<br />
Renesas Electronics and California<br />
Eastern Laboratories (CEL) are<br />
now shipp<strong>in</strong>g two new high power<br />
handl<strong>in</strong>g GaAs MMIC SPDT<br />
switches, the UPG2415T6X and<br />
UPG2415TK. Both switches have<br />
4-6 dB higher power handl<strong>in</strong>g<br />
capability compared to standard<br />
Wi-Fi Switch ICs and are ideal for<br />
access po<strong>in</strong>ts and applications<br />
requir<strong>in</strong>g higher l<strong>in</strong>earity, such as<br />
Video and Media Stream<strong>in</strong>g over<br />
Wireless. The UPG2415T6X and<br />
UPG2415TK provide designers<br />
with a comb<strong>in</strong>ation of bandwidth<br />
to 6 GHz, low <strong>in</strong>sertion loss, high<br />
isolation, high power handl<strong>in</strong>g<br />
capability and compact packag<strong>in</strong>g.<br />
Available now from CEL. Pric<strong>in</strong>g<br />
for the UPG2415T6X is $0.39; pric<strong>in</strong>g<br />
for the UPG2415TK is $0.38;<br />
both at 100K pcs.<br />
California Eastern Laboratories<br />
www.cel.com<br />
Signal Analyzers<br />
Agilent Technologies Inc. <strong>in</strong>troduced<br />
two solutions for analysis<br />
and generation of wide bandwidth<br />
signals. The solutions <strong>in</strong>clude a<br />
160-MHz analysis bandwidth<br />
option for the high-performance<br />
PXA signal analyzer and Signal<br />
Studio software for 802.11ac signal<br />
creation. Wider bandwidth signal<br />
analysis, up to 160 MHz, is necessary<br />
to cover all of the bandwidths<br />
supported by 802.11ac. Agilent’s<br />
PXA signal analyzer with 160-<br />
MHz bandwidth addresses this<br />
need, as well as any other application<br />
that requires eng<strong>in</strong>eers to<br />
analyze wider bandwidth signals.<br />
A critical step <strong>in</strong> test<strong>in</strong>g any<br />
802.11 device is to generate standard-compliant<br />
802.11ac test signals.<br />
Agilent’s Signal Studio for<br />
WLAN software aids this task by<br />
enabl<strong>in</strong>g the creation of 802.11ac<br />
waveforms with BCC or LDPC<br />
channel cod<strong>in</strong>g, all MCS codes, and<br />
s<strong>in</strong>gle- or multi-user MIMO up to<br />
four streams.<br />
Agilent Technologies<br />
www.agilent.com<br />
Push-Pull Wideband Amp<br />
The ZHL-132LM-75+ by M<strong>in</strong>i-<br />
Circuits is a push-pull amplifier<br />
featur<strong>in</strong>g low second-and thirdorder<br />
distortion products across its<br />
40-1300 MHz bandwidth. Designed<br />
for a 6V/256 mA typ. power supply,<br />
with F connectors <strong>in</strong>/out, it’s a<br />
high-value, low-cost solution provid<strong>in</strong>g<br />
a 14-dB ga<strong>in</strong> for CATV,<br />
<strong>in</strong>strumentation, and many other<br />
applications at VHF, UHF, and<br />
lower L-band frequencies. The<br />
rugged, alum<strong>in</strong>um alloy case measures<br />
3.75 × 2.0 × 0.80” high.<br />
M<strong>in</strong>i-Circuits<br />
www.m<strong>in</strong>icircuits.com<br />
8-Way Splitter<br />
M/A-COM Technology Solutions<br />
Inc. <strong>in</strong>troduced an 8-way active<br />
splitter for CATV applications.<br />
Featur<strong>in</strong>g a default-on loopthrough<br />
path, the MAAM-010237<br />
allows for access to the cable signal<br />
even when the CPE box is powered<br />
down. The MAAM-010237 is a<br />
highly l<strong>in</strong>ear 8-way active splitter<br />
with low distortion and low noise<br />
figure. Designed for operation from<br />
50 to 1100 MHz, the MAAM-<br />
010237 is packaged <strong>in</strong> a RoHS<br />
compliant leadless 4 mm PQFN<br />
package. The 8-way splitter is fabricated<br />
us<strong>in</strong>g M/A-COM Tech’s E/D<br />
pHEMT process. Production quantities<br />
and samples are available<br />
from stock.<br />
M/A-COM Technology Solutions<br />
www.macomtech.com<br />
HCMOS Oscillators<br />
Fox Electronics now offers the F300<br />
series of HCMOS oscillators. The 1-<br />
volt oscillators <strong>in</strong>corporate a standby<br />
function that reduces the oscillator’s<br />
current consumption to 5<br />
micro amps for more efficient power<br />
usage. Available <strong>in</strong> a compact 3.2 ×<br />
2.5 mm package, the small form factor<br />
F300 series <strong>in</strong>cludes models<br />
with stabilities rang<strong>in</strong>g from ±20 to<br />
±100 ppm. The new oscillators offer<br />
a low current draw of 2.5 mA across<br />
the 1.8 to 32.0 MHz frequency<br />
range and 3.5 mA from 32.1 to 50.0<br />
MHz. Fox’s new series of RoHScompliant<br />
oscillators are ideal for<br />
use <strong>in</strong> environments with m<strong>in</strong>imal<br />
air circulation, such as compact consumer<br />
electronics and weatherproof<br />
enclosures. Portable and battery-powered<br />
devices, <strong>in</strong>clud<strong>in</strong>g<br />
satellite and terrestrial radio;<br />
WiMax, 802.11 and Bluetooth wireless;<br />
wired and optical networks for<br />
voice, data and Internet as well as<br />
automotive and test equipment;<br />
remote sens<strong>in</strong>g equipment; and<br />
GPS technology are also ideal applications<br />
for the F300 oscillators.<br />
Fox Electronics<br />
www.foxonl<strong>in</strong>e.com<br />
70 High <strong>Frequency</strong> Electronics
TE Connectivity<br />
RF COAXIAL SOLUTIONS<br />
TE Connectivity offers the broadest range of RF Coaxial<br />
Interconnect products <strong>in</strong> the <strong>in</strong>dustry today. Our RF Coax portfolio<br />
is built on our strong heritage of the <strong>in</strong>dustry’s lead<strong>in</strong>g brand names<br />
such as AMP, M/A-COM, Microdot, and Tyco Electronics, as well as<br />
product l<strong>in</strong>es formerly known as Omni-Spectra and Adams Russell.<br />
For more than 25 years, <strong>Microwave</strong> Components has been deliver<strong>in</strong>g<br />
these quality products and superior technical support to the <strong>in</strong>dustry with<br />
an extensive <strong>in</strong>ventory of commercial and Mil Approved products.<br />
Call us today and put our experience to work for you...<br />
Product Feature<br />
OSP & OSSP Bl<strong>in</strong>d Mate<br />
Connectors<br />
Phone: (888) 591-4455 or (772) 286-4455 Fax: (772) 286-4496<br />
E-mail: adm<strong>in</strong>@microwavecomponents<strong>in</strong>c.com<br />
Web Site: www.microwavecomponents<strong>in</strong>c.com<br />
AMP, Microdot, Tyco Electronics, TE Connectivity,<br />
TE Connectivity (logo) and TE (logo) are Trademarks<br />
AS 9120<br />
ISO 9001:2000<br />
CERTIFIED
High <strong>Frequency</strong> Products<br />
NEW PRODUCTS<br />
allow the HMC829LP6GE to generate<br />
frequencies from 45 to 1050<br />
MHz, 1400 to 2100 MHz, and 2800<br />
to 4200 MHz. The HMC829LP6GE<br />
is ideal for very high data rate<br />
radios, DDS replacement, phased<br />
array applications, CATV equipment<br />
and cellular/4G/WiMax<br />
<strong>in</strong>frastructure applications.<br />
Hittite <strong>Microwave</strong> Corporation<br />
www.hittite.com<br />
version 8.0 for ADS customers<br />
<strong>in</strong>troduces forty-six (46) new Global<br />
Models for passive RLC’s, and eighteen<br />
(18) new non-l<strong>in</strong>ear models for<br />
diodes, switches, amplifiers, and<br />
transistors. Designers can download<br />
the free model library,<br />
Modelithics SELECT from the<br />
Company website.<br />
Modelithics, Inc.<br />
www.modelithics.com<br />
RF Power Capacitors<br />
AVX Corporation has expanded its<br />
HQ Series MLC surface mount RF<br />
power capacitors to <strong>in</strong>clude P90<br />
dielectric versions for high power<br />
high frequency applications, such<br />
as medical and <strong>in</strong>dustrial electronics.<br />
The HQ Series MLC with the<br />
P90 dielectric material features an<br />
ultra-low equivalent series resistance<br />
(ESR) and dissipation factor<br />
at high frequencies. The HQ Series<br />
capacitor with P90 dielectric is<br />
now available <strong>in</strong> E case sizes. The<br />
HQ Series power capacitors are<br />
designed for 300 to 7,200V applications<br />
and feature a dielectric<br />
strength of 120% of rated WVDC.<br />
The devices can handle the high<br />
power and high voltage levels of<br />
RF power amplifiers, <strong>in</strong>ductive<br />
heat<strong>in</strong>g, high magnetic field environments<br />
(MRI coils), and medical<br />
and <strong>in</strong>dustrial electronics.<br />
AVX Corporation<br />
www.avx.com<br />
Fractional-N PLL<br />
Hittite <strong>Microwave</strong> Corporation has<br />
<strong>in</strong>troduced the HMC829LP6GE, a<br />
low noise, wide band, Fractional-N<br />
phase locked loop (PLL) that features<br />
an <strong>in</strong>tegrated voltage controlled<br />
oscillator (VCO) with a fundamental<br />
frequency of 2800 to<br />
4200 MHz, and an <strong>in</strong>tegrated VCO<br />
output divider (divide by<br />
1/2/4/6.../60/62). These features<br />
EM Design Software<br />
Cobham Technical Services has<br />
announced a new release of the<br />
Concerto electromagnetic design<br />
software for RF and microwave<br />
applications from its Vector Fields<br />
Software product l<strong>in</strong>e. The latest<br />
version—Concerto v7.5R1—<strong>in</strong>corporates<br />
numerous enhancements<br />
to accelerate every aspect of<br />
design, simulation, analysis and<br />
optimization. Many of the<br />
enhancements <strong>in</strong> this release center<br />
on the 3D geometric Modeler<br />
that forms an <strong>in</strong>tegral part of all<br />
Concerto configurations. This has<br />
new mesh<strong>in</strong>g options for the f<strong>in</strong>ite<br />
element (FE) Eigenvalue solver,<br />
and the Modeller now provides<br />
access to a range of additional features<br />
<strong>in</strong> Concerto’s f<strong>in</strong>ite difference<br />
time doma<strong>in</strong> (FDTD) simulation<br />
eng<strong>in</strong>e.<br />
Cobham Technical Services<br />
www.cobham.com/technicalservices<br />
Model Libraries<br />
Modelithics, Inc. has released an<br />
enhanced version of their l<strong>in</strong>ear<br />
and non-l<strong>in</strong>ear system level model<br />
libraries for RF, microwave and millimeter-wave<br />
device and components.<br />
The Modelithics COM-<br />
PLETE Library version 8.0 for<br />
Agilent Advanced Design System<br />
(ADS) customers is now fully compatible<br />
with ADS 2011. Modelithics’<br />
Hybrid Coupler<br />
Florida RF Labs has expanded the<br />
HybriX ® coupler product l<strong>in</strong>e with<br />
the <strong>in</strong>troduction of a new X-band<br />
hybrid coupler, HPX2F. With operat<strong>in</strong>g<br />
frequency of 8 to 12 GHz,<br />
HPX2F is designed for X-band<br />
applications <strong>in</strong>clud<strong>in</strong>g satellite,<br />
radar, po<strong>in</strong>t-to-po<strong>in</strong>t radio, and<br />
telemetry. The multi-layered PTFE<br />
construction of HPX2F is thermally<br />
stable and compatible with common<br />
PWB materials. Optimal circuit<br />
performance is easily achievable<br />
when us<strong>in</strong>g HPX2F with our<br />
Diamond Rf Resistives X-band<br />
term<strong>in</strong>ations. As with other Hybrix<br />
couplers, HPX2F is available <strong>in</strong><br />
both RoHS-compliant and t<strong>in</strong>-lead<br />
plat<strong>in</strong>g. HPX2F can be ordered<br />
with a space-level qualification<br />
test package that <strong>in</strong>cludes a true<br />
multipaction test performed at<br />
atmospheric pressure of 10 -5 torr<br />
or lower. HPX2F is delivered <strong>in</strong><br />
tape and reel packag<strong>in</strong>g for ease of<br />
use <strong>in</strong> pick-and-place assembly.<br />
Florida RF Labs & EMC Technology<br />
www.rflabs.com<br />
Mid-Range Signal Generator<br />
Rohde & Schwarz has enhanced its<br />
analog R&S SMB100A mid-range<br />
signal generator by add<strong>in</strong>g new<br />
frequency options. The R&S SMB-<br />
72 High <strong>Frequency</strong> Electronics
TINY<br />
Wideband<br />
Transformers<br />
TOP HAT<br />
TM<br />
NC<br />
0.08" x 0.05"<br />
TC<br />
0.15"x0.15"<br />
0.15-6200 MHz RoHS<br />
Rugged, repeatable performance.<br />
At M<strong>in</strong>i-Circuits, we’re passionate about transformers. We even<br />
make own transmission l<strong>in</strong>e wire under tight manufactur<strong>in</strong>g<br />
control, and utilize all-welded connections to maximize<br />
performance, reliability, and repeatability. And for signals up<br />
to 6 GHz, our rugged LTCC ceramic models feature wraparound<br />
term<strong>in</strong>ations for your visual solder <strong>in</strong>spection, and<br />
they are even offered <strong>in</strong> packages as small as 0805!<br />
Cont<strong>in</strong>ued <strong>in</strong>novation: Top Hat.<br />
A M<strong>in</strong>i-Circuits exclusive, this new feature is now available on<br />
every open-core transformer we sell. Top Hat speeds<br />
customer pick-and-place throughput <strong>in</strong> four dist<strong>in</strong>ct ways:<br />
(1) faster set-up times, (2) fewer missed components,<br />
¢<br />
as low as99 each (qty. 1000)<br />
compliant.<br />
(3) better placement accuracy and consistency,<br />
and (4) high-visibility mark<strong>in</strong>gs for quicker visual<br />
identification and <strong>in</strong>spection.<br />
More models, to meet more needs<br />
M<strong>in</strong>i-Circuits has a variety of over 200 SMT models <strong>in</strong><br />
stock. So for RF or microwave baluns and transformers,<br />
with or without center taps or DC isolation, you can<br />
probably f<strong>in</strong>d what you need at m<strong>in</strong>icircuits.com. Enter<br />
your requirements, and Yoni2, our patented search<br />
eng<strong>in</strong>e, can identify a match <strong>in</strong> seconds. And new custom<br />
designs are just a phone call away, with surpris<strong>in</strong>gly<br />
quick turnaround times ga<strong>in</strong>ed from over 40 years of<br />
manufactur<strong>in</strong>g experience!<br />
See m<strong>in</strong>icircuits.com for technical specifications, performance data, pric<strong>in</strong>g, and real-time, <strong>in</strong>-stock availability!<br />
M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what Value is all about!<br />
®<br />
U.S. Patents<br />
7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
IF/RF MICROWAVE COMPONENTS<br />
377 rev X
High <strong>Frequency</strong> Products<br />
NEW PRODUCTS<br />
B120/B120L and R&S SMB-<br />
B140/B140L options (L versions<br />
without step attenuator) enable<br />
the generator to cover the frequency<br />
range from 100 kHz to 20 and 40<br />
GHz, respectively. The R&S<br />
SMB100A can now handle everyth<strong>in</strong>g<br />
from analog RF to microwave<br />
applications. In the new frequency<br />
ranges, the R&S SMB100A offers a<br />
wide dynamic range of –120 dBm<br />
to +14 dBm as standard. New high<br />
power options—the R&S SMB-B31<br />
(for the 20 GHz model) and the<br />
R&S SMB-B32 (for the 40 GHz<br />
model)—make it possible to<br />
achieve an output power of max.<br />
+25 dBm. The new options allow<br />
users to skip the practice of loop<strong>in</strong>g<br />
<strong>in</strong> an external amplifier to achieve<br />
higher output power. Both options<br />
are available now.<br />
Rohde & Schwarz<br />
www.rohde-schwarz.com<br />
Downconverters<br />
NXP Semiconductors N.V. <strong>in</strong>troduced<br />
the TFF101xHN, a family of<br />
<strong>in</strong>tegrated downconverters for use<br />
<strong>in</strong> low noise block (LNB) 10.7-GHz<br />
to 12.75-GHz Ku band satellite<br />
receiver systems. Designed for<br />
downl<strong>in</strong>k signal reception for TV<br />
satellite dishes, NXP’s new family of<br />
DVB-S compliant downconverters<br />
consume 50% less current (52 mA)<br />
than other <strong>in</strong>tegrated solutions. The<br />
TFF101xHN family comes <strong>in</strong> a leadless<br />
16-p<strong>in</strong> package with a conversion<br />
ga<strong>in</strong> rang<strong>in</strong>g from 37 to 45 dB.<br />
They also offer <strong>in</strong>tegrated phase<br />
noise of 1.5 degrees RMS and a low<br />
noise figure of 7 dB.<br />
NXP Semiconductors N.V.<br />
www.nxp.com<br />
Low Noise Amplifiers<br />
NuWaves Eng<strong>in</strong>eer<strong>in</strong>g has expanded<br />
their series of High Intercept<br />
Low Noise Amplifiers (HILNA)<br />
with the <strong>in</strong>troduction of the HILNA<br />
3G. The HILNATM 3G covers the<br />
broad frequency range from 1 to 3<br />
GHz with a ga<strong>in</strong> of 50 dB and is<br />
even smaller than its predecessors<br />
boast<strong>in</strong>g a total of 3.3 cubic <strong>in</strong>ches<br />
and weigh<strong>in</strong>g only 3 oz. It is ideal<br />
for system <strong>in</strong>tegration where footpr<strong>in</strong>t,<br />
high ga<strong>in</strong> and broadband<br />
operation are determ<strong>in</strong><strong>in</strong>g factors.<br />
NuWaves Eng<strong>in</strong>eer<strong>in</strong>g<br />
www.nuwaves-ltd.com<br />
Variable Ga<strong>in</strong> Amplifier<br />
Avago Technologies announced a<br />
high-l<strong>in</strong>earity variable ga<strong>in</strong> amplifier<br />
(VGA) module for base transceiver<br />
station (BTS) applications. The<br />
new small-footpr<strong>in</strong>t ALM-81224<br />
VGA module replaces exist<strong>in</strong>g discrete<br />
solutions, provid<strong>in</strong>g significant<br />
board space sav<strong>in</strong>gs and shorten<strong>in</strong>g<br />
design cycle time. Operat<strong>in</strong>g<br />
<strong>in</strong> a broad frequency band from<br />
1450 to 2750 MHz, the module<br />
addresses cellular BTS automatic<br />
ga<strong>in</strong> control (AGC) and temperature<br />
compensation circuitry applications.<br />
Available <strong>in</strong> a compact 6.0 ×<br />
6.0 × 1.0 mm package, the module<br />
offers low current consumption of<br />
383 mA. The module’s <strong>in</strong>put is fullymatched<br />
to 50 ohms and output<br />
match can be tuned for optimal performance<br />
at a particular frequency<br />
band with<strong>in</strong> the operation range,<br />
m<strong>in</strong>imiz<strong>in</strong>g the need for external<br />
match<strong>in</strong>g components and mak<strong>in</strong>g<br />
the solution easy to use.<br />
Avago Technologies<br />
www.avagotech.com<br />
Data Modules<br />
Laird Technologies, Inc. announced<br />
the release of its new BTM<br />
440/441/442/443 Bluetooth ®<br />
Enhanced Data modules. Meet<strong>in</strong>g<br />
full FCC, CE and Bluetooth SIG<br />
approvals, the new modules comply<br />
with the Bluetooth 2.1 standard.<br />
They are also available <strong>in</strong><br />
either AT command or Multipo<strong>in</strong>t<br />
API modes by default. The<br />
enhanced Multipo<strong>in</strong>t mode supports<br />
up to seven simultaneously<br />
connected slave devices; mak<strong>in</strong>g<br />
the modules an ideal embedded<br />
solution for more than just po<strong>in</strong>tto-po<strong>in</strong>t<br />
Bluetooth connections.<br />
Simple to configure and set up, the<br />
BTM440/441/442/443 series offers<br />
multiple advanced profiles on a<br />
s<strong>in</strong>gle module.<br />
Laird Technologies, Inc.<br />
www.lairdtech.com<br />
BERT Software Packages<br />
Anritsu Company <strong>in</strong>troduces two<br />
software packages for its MP2100A<br />
BERTWave series of BERT that<br />
create a s<strong>in</strong>gle-<strong>in</strong>strument solution<br />
that cuts the cost of test<strong>in</strong>g active<br />
optical cables (AOC) and direct<br />
attach cables (DAC) <strong>in</strong> half. With<br />
the software <strong>in</strong>stalled, the<br />
MP2100A BERTWave provides<br />
developers of communications<br />
equipment, servers, computers,<br />
electronic components and cables<br />
used <strong>in</strong> digital transmission systems<br />
with an all-<strong>in</strong>-one solution<br />
that supports jitter decomposition<br />
analysis, S21 transmission characteristics,<br />
and waveform simulation.<br />
The Jitter Analysis Software can<br />
separately measure each type of<br />
jitter, while the Transmission<br />
Analysis Software supports analysis<br />
of S21 transmission characteristics<br />
and waveform simulation.<br />
Install<strong>in</strong>g both software packages<br />
<strong>in</strong> the MP2100A adds high-speed<br />
post-simulation waveform analysis<br />
to the standard BER, Eye Pattern,<br />
and Eye Mask measurements.<br />
Anritsu Company<br />
www.us.anritsu.com<br />
74 High <strong>Frequency</strong> Electronics
PRODUCT HIGHLIGHTS<br />
...featur<strong>in</strong>g advertisers <strong>in</strong> High <strong>Frequency</strong> Electronics<br />
Surface Mount RF Transformer<br />
M<strong>in</strong>i-Circuits announces the<br />
TCM401WX+, a 50 ohm surface mount RF<br />
transformer. Operat<strong>in</strong>g temperature is<br />
–20°C to 85°C, RF power 0.25 W and DC<br />
current 30 mA. This transformer features<br />
wide bandwidth (3 to 800 MHz), good<br />
return loss, plastic base with solder plated<br />
leads, and is aqueous washable.<br />
Applications <strong>in</strong>clude CATV, VHF/UFH, balanced<br />
amplifier, and impedance match<strong>in</strong>g.<br />
Priced $1.99 each <strong>in</strong> quantities of 20.<br />
www.m<strong>in</strong>icircuits.com<br />
Low-Noise Medium PA<br />
MITEQ’s new Model JS3-18004000-40-15P<br />
is a state-of-the-art low-noise medium<br />
power amplifier with only 4 dB maximum<br />
noise figure and +15 dBm P 1dB . This model<br />
has a ga<strong>in</strong> of 32 dB m<strong>in</strong>imum <strong>in</strong> a small<br />
hermetically sealed package with field<br />
replaceable K-connectors. MIL-883 screen<strong>in</strong>g<br />
is also available. Different options such<br />
as ga<strong>in</strong>, noise figure and power output are<br />
also available.<br />
www.miteq.com<br />
Adjustable Delay L<strong>in</strong>e<br />
RLC Electronics’ manually adjustable<br />
delay l<strong>in</strong>e (phase shifter) offers cont<strong>in</strong>uous<br />
adjustment of electrical delay over the frequency<br />
range of DC-40 GHz. Adjustment is<br />
through a multiturn, lock<strong>in</strong>g shaft. Low<br />
<strong>in</strong>sertion loss (2.5 dB max) and VSWR are<br />
ma<strong>in</strong>ta<strong>in</strong>ed throughout the adjustment<br />
range. Impedance is 50 ohms, and power<br />
rat<strong>in</strong>g is 5 watts average. The unit comes<br />
with a choice of male or female 2.92 mm<br />
connectors and operates <strong>in</strong> a temperature<br />
range of –55 to +85 deg C. See Company<br />
website for pric<strong>in</strong>g <strong>in</strong>formation.<br />
www.rlcelectronics.com<br />
Switch<strong>in</strong>g Regulator<br />
L<strong>in</strong>ear Technology Corporation announces<br />
the LT3641, a dual channel, current mode<br />
step-down switch<strong>in</strong>g regulator with a<br />
power-on reset and watchdog timer. Its 4V<br />
to 42V <strong>in</strong>put voltage range with 55V transient<br />
capability makes it ideal for load<br />
dump and cold crank conditions. The<br />
LT3641 uses a unique dual channel design<br />
with a high <strong>in</strong>put voltage nonsynchronous<br />
channel, deliver<strong>in</strong>g up to 1.1 A of cont<strong>in</strong>uous<br />
output current.<br />
www.l<strong>in</strong>ear.com<br />
Coaxial Power Splitter/Comb<strong>in</strong>er<br />
M<strong>in</strong>i-Circuits’ model ZX10-2-183+ is a<br />
coaxial 2-way-0° power splitter/comb<strong>in</strong>er.<br />
Features <strong>in</strong>clude very wideband (1500 to<br />
18000 MHz), low <strong>in</strong>sertion loss (0.8 dB<br />
typ.), good isolation (22 dB typ.), and up to<br />
5 W power <strong>in</strong>put as splitter. Applications<br />
<strong>in</strong>clude PCS/DCS, defense and federal communications<br />
and <strong>in</strong>strumentation.<br />
www.m<strong>in</strong>icircuits.com<br />
Simulation Software Update<br />
ACS has recently released a new version of<br />
its LINC2 Pro RF and microwave circuit<br />
design software suite. Version 2.72 release<br />
L adds a new PIN diode model with forward<br />
and reverse (ON and OFF) characteristics<br />
modeled. Equations can be formulated<br />
that provide simulation of the ON resistance<br />
versus bias current, allow<strong>in</strong>g for tun<strong>in</strong>g<br />
of the PIN diode ON resistance <strong>in</strong> real<br />
time (with<strong>in</strong> the graph w<strong>in</strong>dow) as a function<br />
of applied bias voltage and current.<br />
www.appliedmicrowave.com<br />
Coaxial Band Stop Filter<br />
The ZX75BS-140+ from M<strong>in</strong>i-Circuits is a<br />
band stop filter built <strong>in</strong> a rugged and compact<br />
connectorized package. This filter<br />
offers good rejection <strong>in</strong> stopband (127.25 to<br />
152.75 MHz). It has repeatable performance<br />
across lots and consistent performance<br />
across temperature. Useful <strong>in</strong><br />
<strong>in</strong>strumentation system for <strong>in</strong>dustrial<br />
applications.<br />
www.m<strong>in</strong>icircuits.com<br />
TWT RF Amplifier<br />
A new 4 to 8.5 GHz, 30 watt amplifier has<br />
been <strong>in</strong>troduced by Dudley Lab. This<br />
amplifier is an all new unit built by Dudley<br />
Lab and fitted with a Siemens Tube and<br />
TWT power supply. The amplifier is provided<br />
<strong>in</strong> a rack mounted enclosure.<br />
Primary power requirement is 100 to<br />
240 VAC, 50/60 Hz.<br />
www.dudleylab.com<br />
PWM Generator<br />
L<strong>in</strong>ear Technology Corporation <strong>in</strong>troduces<br />
the LTC2991, an 8-channel I²C temperature,<br />
voltage and current monitor for 3V<br />
and 5V systems. The LTC2991 is a highly<br />
<strong>in</strong>tegrated monitor<strong>in</strong>g solution that <strong>in</strong>corporates<br />
a 14-bit ADC, 10ppm/°C voltage<br />
reference and I²C digital <strong>in</strong>terface to provide<br />
submillivolt voltage resolution and 1%<br />
current measurement, as well as ±0.7°C<br />
remote accuracy and ±1°C <strong>in</strong>ternal accuracy,<br />
when mak<strong>in</strong>g temperature measurements.<br />
www.l<strong>in</strong>ear.com
Directional/Bi-Directional<br />
COUPLERS<br />
5 kHz to 12 GHz up to 250W<br />
Look<strong>in</strong>g for couplers or power taps? M<strong>in</strong>i-Circuits has<br />
236 models <strong>in</strong> stock, and we’re add<strong>in</strong>g even more! Our<br />
versatile, low-cost solutions <strong>in</strong>clude surface-mount<br />
models down to 1 MHz, and highly evolved LTCC<br />
designs as small as 0.12 x 0.06", with m<strong>in</strong>imal <strong>in</strong>sertion<br />
loss and high directivity. Other SMT models are designed<br />
for up to 100W RF power, and selected core-and-wire<br />
models feature our exclusive Top Hat, for faster<br />
pick-and-place throughput.<br />
$<br />
1<br />
69<br />
from<br />
ea. (qty. 1000)<br />
At the other end of the scale, our new connectorized<br />
air-l<strong>in</strong>e couplers can handle up to 250W and frequencies<br />
as high as 12 GHz, with low <strong>in</strong>sertion loss (0.2 dB @ 9<br />
GHz, 1 dB @ 12 GHz) and exceptional coupl<strong>in</strong>g flatness!<br />
All of our couplers are RoHS compliant. So if you need<br />
a 50 or 75 , directional or bi-directional, DC pass or<br />
DC block coupler, for military, <strong>in</strong>dustrial, or commercial<br />
applications, you can probably f<strong>in</strong>d it at m<strong>in</strong>icircuits.com,<br />
and have it shipped today!<br />
See m<strong>in</strong>icircuits.com for specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />
M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />
®<br />
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7739260, 7761442<br />
ISO 9001 ISO 14001 AS 9100<br />
®<br />
P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />
The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />
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ADVERTISER INDEX<br />
Company ...........................................................................Page<br />
ACS .......................................................................................................56<br />
Aethercomm..........................................................................................37<br />
Anaren...................................................................................................41<br />
AR Modular RF ....................................................................................27<br />
American Technical Ceramics .............................................................33<br />
AWR ......................................................................................................23<br />
Besser Associates .................................................................................78<br />
Carlisle..................................................................................................53<br />
Coilcraft ................................................................................................11<br />
C.W. Swift & Associates ..............................................................Cover 2<br />
Delta......................................................................................................32<br />
Dudley Lab ...........................................................................................75<br />
Dynawave..............................................................................................19<br />
Emerson Network Power .......................................................................4<br />
Florida RF Labs....................................................................................35<br />
IW <strong>Microwave</strong>.......................................................................................57<br />
J microTechnology................................................................................66<br />
L<strong>in</strong>ear Technology ................................................................................13<br />
L<strong>in</strong>ear Technology ................................................................................15<br />
Luff Research........................................................................................75<br />
Megaphase ............................................................................................61<br />
Micro Lambda Wireless .......................................................................21<br />
<strong>Microwave</strong> Components .......................................................................71<br />
M<strong>in</strong>i-Circuits...........................................................................................2<br />
M<strong>in</strong>i-Circuits.........................................................................................25<br />
M<strong>in</strong>i-Circuits.........................................................................................47<br />
M<strong>in</strong>i-Circuits.........................................................................................50<br />
M<strong>in</strong>i-Circuits.........................................................................................51<br />
M<strong>in</strong>i-Circuits.........................................................................................55<br />
M<strong>in</strong>i-Circuits.........................................................................................63<br />
M<strong>in</strong>i-Circuits.........................................................................................69<br />
M<strong>in</strong>i-Circuits.........................................................................................73<br />
M<strong>in</strong>i-Circuits.........................................................................................77<br />
MITEQ ....................................................................................................1<br />
MITEQ ..................................................................................................42<br />
MITEQ .........................................................................................Cover 4<br />
Molex ............................................................................................Cover 3<br />
Relcomm Technologies .........................................................................18<br />
Renaissance Electronics Corp/HXI .......................................................9<br />
RLC Electronics....................................................................................29<br />
Rogers Corporation ..............................................................................49<br />
Samtec...................................................................................................17<br />
San-tron ................................................................................................59<br />
Sector <strong>Microwave</strong> .................................................................................75<br />
SGMC <strong>Microwave</strong>.................................................................................31<br />
Skyworks Solutions..............................................................................65<br />
SW Tech ................................................................................................30<br />
Teledyne Cougar.....................................................................................7<br />
Teledyne Storm Products.....................................................................39<br />
Tru Corporation....................................................................................45<br />
Wenteq <strong>Microwave</strong> Corp ......................................................................75<br />
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High <strong>Frequency</strong> Electronics (USPS 024-316) is published monthly by Summit Technical Media, LLC, 3 Hawk Dr., Bedford, NH 03110.<br />
Vol. 10 No. 10 October 2011. Periodicals Postage Paid at Manchester, NH and at additional mail<strong>in</strong>g offices.<br />
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Subscriptions are free to qualified technical and management personnel <strong>in</strong>volved <strong>in</strong> the design, manufacture and distribution of electronic equipment<br />
and systems at high frequencies. Copyright © 2011, Summit Technical Media, LLC<br />
October 2011 79
DESIGN NOTES<br />
Reader Feedback about PA Feedback<br />
In the last issue, we published a request for <strong>in</strong>formation<br />
on negative feedback <strong>in</strong> power amplifiers. In<br />
addition to forward<strong>in</strong>g the comments we received to the<br />
requester, we’ll share them with everyone.<br />
Gary,<br />
Have Mike take a look at Solid State Design by W.<br />
Hayward and D. DeMaw, ARRL 1977, pp 188-190.<br />
This is for bipolar amps with transformer output<br />
and resistive feedback, with graphs and <strong>in</strong>structions to<br />
make some sense of the trade-offs.<br />
I do not have a reference handy for the Norton lossless<br />
feedback amplifiers.<br />
Tom Munson (WF7LMZ)<br />
Peoria, AZ<br />
Gary,<br />
Here are some references from my library regard<strong>in</strong>g<br />
negative feedback and related circuit design.<br />
Several specifically address low frequency design, but<br />
the pr<strong>in</strong>ciples and methods are applicable to RF<br />
design as well.<br />
Dave Bowker (K1FK)<br />
Fort Kent, ME<br />
1. Langford-Smith, Radiotron Designer’s Handbook,<br />
4th edition, 1953, chapter 7, Negative Feedback,<br />
www.tubebooks.org/Books/RDH4.pdf<br />
2. “Harmonic Distortion and Negative Feedback <strong>in</strong><br />
Audio-<strong>Frequency</strong> Amplifiers,” BBC Eng<strong>in</strong>eer<strong>in</strong>g<br />
Tra<strong>in</strong><strong>in</strong>g Dept., 1950. www.tubebooks.org/Books/<br />
bbc_feedback.pdf<br />
3. Pappenfus, Bruene, Schoenike, S<strong>in</strong>gle Sideband<br />
Pr<strong>in</strong>cipals and Circuits, McGraw-Hill, 1964, Chapter<br />
13, Distortion Reduction. Available from most libraries<br />
participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>ter-library loan service.<br />
4. Landee, Davis, Albrecht, Electronic Designers<br />
Handbook, McGraw-Hill, 1957, Chapter 18, Pr<strong>in</strong>cipals<br />
of Feedback. Available from most public and <strong>in</strong>stitutional<br />
libraries participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>ter-library loan service.<br />
5. Editors & Eng<strong>in</strong>eers, The Radio Handbook, most<br />
editions after 15th edition have a chapter or sections<br />
devoted to RF Feedback; www.tubebooks.org/Books/<br />
orr_radio.pdf<br />
6. Gray, Graham, Radio Transmitters, McGraw-<br />
Hill, 1961, Chapter 6, Section 6-12, Negative<br />
Feedback; www.tubebooks.org/Books/radtrns.pdf<br />
7. Reference Data for Radio Eng<strong>in</strong>eers, 3rd edition,<br />
Federal Telephone and Radio Corp, 1949, Chapter 5,<br />
Fundamentals of Networks: Chapter 13. 4th edition<br />
atwww.tubebooks.org/Books/itt_ref_4.pdf<br />
8. Krauss, Bostian, Raab, Solid State Radio<br />
Eng<strong>in</strong>eer<strong>in</strong>g, John Wiley & Sons, 1980, Chapter 12.<br />
Available from most libraries participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>terlibrary<br />
loan service.<br />
9. Seely, Electron-Tube Circuits, McGraw-Hill,<br />
1958, Chapter 5, Feedback <strong>in</strong> Amplifiers; www.tubebooks.org/Books/seely.pdf<br />
80 High <strong>Frequency</strong> Electronics
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RF/LO Conversion LO-to-RF<br />
Model <strong>Frequency</strong> Loss Image Rejection Isolation<br />
Number (GHz) (dB) Max. (dB) M<strong>in</strong>. (dB) M<strong>in</strong>.<br />
IMAGE REJECTION MIXERS<br />
IRM0204(*)C2(**) 2 - 4 7.5 18 20<br />
IRM0408(*)C2(**) 4 - 8 8 18 20<br />
IRM0812(*)C2(**) 8 - 12 8 18 20<br />
IRM1218(*)C2(**) 12 - 18 10 18 20<br />
IRM0208(*)C2(**) 2 - 8 9 18 18<br />
IRM0618(*)C2(**) 6 - 18 10 18 18<br />
IR1826NI7(**) 18 - 26 10.5 18 20<br />
IR2640NI7(**) 26 - 40 12 18 20<br />
Model<br />
RF/LO<br />
<strong>Frequency</strong><br />
Conversion<br />
Loss<br />
Balance<br />
Phase (±Deg.) Amplitude (±dB)<br />
LO-to-RF<br />
Isolation<br />
Number (GHz) (dB) Max. Typ./Max. Typ./Max. (dB) M<strong>in</strong>.<br />
I/Q DEMODULATORS<br />
IRM0204(*)C2Q 2 - 4 10.5 7.5/10 1.0/1.5 20<br />
IRM0408(*)C2Q 4 - 8 11 7.5/10 1.0/1.5 20<br />
IRM0812(*)C2Q 8 - 12 11 5/7.5 .75/1.0 20<br />
IRM1218(*)C2Q 12 - 18 13 10/15 1.0/1.5 20<br />
IRM0208(*)C2Q 2 - 8 12 7.5/10 1.0/1.5 18<br />
IRM0618(*)C2Q 6 - 18 13 10/15 1.0/1.5 18<br />
IR1826NI7Q 18 - 26 13.5 10/15 1.0/1.5 20<br />
IR2640NI7Q 26 - 40 15 10/15 1.0/1.5 20<br />
RF Conversion Carrier Carrier Suppression<br />
Model <strong>Frequency</strong> Loss Suppression Carrier - Fundamental IF<br />
Number (GHz) (dB) Max. (dBc) M<strong>in</strong>. (dBc) M<strong>in</strong>.<br />
IF DRIVEN MODULATORS<br />
SSM0204(*)C2MD(**) 2 - 4 9 20 20<br />
SSM0408(*)C2MD(**) 4 - 8 9 20 18<br />
SSM0812(*)C2MD(**) 8 - 12 9 20 20<br />
SSM1218(*)C2MD(**) 12 - 18 10 20 18<br />
SSM0208(*)C2MD(**) 2 - 8 9 20 18<br />
SSM0618(*)C2MD(**) 6 - 18 12 20 18<br />
For Carrier Driven Modulators, please contact MITEQ.<br />
MODEL NUMBER OPTION TABLE<br />
(**) IF FREQUENCY<br />
Add Letter OPTION (MHz)<br />
A 20 - 40<br />
B 40 - 80<br />
(*) LO/IF P1 dB C.P.<br />
Add Letter Power Range (dBm) (Typ.)<br />
L 10 - 13 dBm +6<br />
M 13 - 16 dBm +10<br />
H 17 - 20 dBm +15<br />
C 100 - 200<br />
Q<br />
DC - 500 (I/Q)<br />
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