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ALSO PUBLISHED ONLINE:<br />

www.highfrequencyelectronics.com<br />

OCTOBER2011<br />

4G PA DESIGN GETS HELP<br />

FROM ACCURATE CIRCUIT<br />

ENVELOPE SIMULATION<br />

Onl<strong>in</strong>e Edition<br />

JUMP DIRECTLY TO THE<br />

TABLE OF CONTENTS<br />

JUMP DIRECTLY TO THE<br />

ADVERTISER INDEX<br />

Copyright © 2011 Summit Technical Media, LLC<br />

INSIDE THIS ISSUE:<br />

Wafer Level Test<strong>in</strong>g of Chip Scale Packag<strong>in</strong>g<br />

Modulat<strong>in</strong>g <strong>Microwave</strong> <strong>Frequency</strong> Synthesizers<br />

Technology Report—Cable & Connector News Update<br />

Featured Products—Power Amplifiers, Materials, Services<br />

Tutorial—Performance of PCB Mounted Connectors<br />

Ideas for today’s eng<strong>in</strong>eers: Analog · Digital · RF · <strong>Microwave</strong> · mm-wave · Lightwave


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FREQUENCY GAIN NOISE NOMINAL PEAK<br />

MODEL RANGE GAIN FLATNESS FIGURE VSWR P1dB Psat CURRENT @ 30V<br />

NUMBER (GHz) (dB, M<strong>in</strong>.) (dB, Max.)(dB, Max.) IN/OUT (dBm, M<strong>in</strong>.)(dBm, M<strong>in</strong>.) (mA)<br />

AMFG-3F-00030300-60-33P 0.03-3 40 2 6 2:2.2 33 35.5 750<br />

AMFG-3F-00030400-60-32P 0.03-4 40 2 6 2:2 32 35 750<br />

AMFG-3F-00040250-60-33P 0.04-2.5 40 2 6 2:2.2 33 35.5 670<br />

AMFG-3F-00050100-50-34P 0.5-1 40 1.5 5 1.8:1.8 34 37 750<br />

AMFG-3F-00230025-30-37P 0.23-0.25 50 1 3 1.5:2 37 40 250<br />

AMFG-3F-00700380-60-35P 0.7-3.8 40 2 6 2.5:2.5 35 39 1500<br />

AMFG-3F-00800220-60-35P 0.8-2.2 40 1.5 6 2:2 35 38 900<br />

AMFG-2F-01000300-60-35P 1-3 40 2 6 2:2.2 35 39 1500<br />

Note: Psat is def<strong>in</strong>ed as the output power where a m<strong>in</strong>imum of 3 dB ga<strong>in</strong> compression takes place.<br />

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EMERSON. CONSIDER IT SOLVED.


ALSO PUBLISHED ONLINE AT:<br />

OCTOBER2011<br />

www.highfrequencyelectronics.com Vol. 10 No. 10<br />

You can view this issue page-by-page, or click on any of<br />

the articles or columns <strong>in</strong> the Table of Contents below<br />

20<br />

frequency synthesizers<br />

<strong>Implement<strong>in</strong>g</strong><br />

<strong>Modulation</strong> <strong>Functions</strong><br />

<strong>in</strong> <strong>Microwave</strong><br />

<strong>Frequency</strong> Synthesizers<br />

Alexander Chenak<strong>in</strong><br />

36<br />

cover story<br />

Circuit Envelope<br />

Simulation: a Powerful<br />

Resource for 4G Power<br />

Amplifier Design<br />

Josh Moore<br />

52<br />

wafer probe test<strong>in</strong>g<br />

Probe Test<strong>in</strong>g of Wafer<br />

Level Chip Scale<br />

Packag<strong>in</strong>g<br />

John Whittaker<br />

16<br />

hf applications<br />

Research News<br />

60<br />

tutorial<br />

RF/<strong>Microwave</strong><br />

Connectors on Pr<strong>in</strong>ted<br />

Circuit Boards<br />

Gary Breed<br />

28<br />

product coverage<br />

Featured Products<br />

44<br />

technology report<br />

News Update on Cable<br />

and Connector Bus<strong>in</strong>ess<br />

and Technology<br />

64<br />

product coverage<br />

New Literature<br />

80<br />

design notes<br />

Reader “Feedback”<br />

6 Editorial<br />

8 Meet<strong>in</strong>gs & Events<br />

Regular Columns<br />

12 In the News<br />

68 New Products<br />

78 Product Highlights<br />

79 Advertiser Index<br />

On the cover—This issue’s cover features AWR’s Circuit Envelope simulation capability,<br />

described <strong>in</strong> the article that beg<strong>in</strong>s on page 36. (Cover artwork courtesy AWR Corp.)<br />

October 2011 5


EDITORIAL<br />

Vol. 10 No. 10, October 2011<br />

Editorial Director<br />

Gary Breed<br />

gary@highfrequencyelectronics.com<br />

Tel: 608-437-9800<br />

Fax: 608-437-9801<br />

Publisher<br />

Scott Spencer<br />

scott@highfrequencyelectronics.com<br />

Tel: 603-472-8261<br />

Fax: 603-471-0716<br />

Associate Publisher<br />

Tim Burkhard<br />

tim@highfrequencyelectronics.com<br />

Tel: 707-544-9977<br />

Fax: 707-544-9375<br />

Associate Editor<br />

Katie Landmark<br />

katie@highfrequencyelectronics.com<br />

Tel: 608-437-9800<br />

Fax: 608-437-9801<br />

Bus<strong>in</strong>ess Office<br />

High <strong>Frequency</strong> Electronics<br />

PO Box 10621<br />

Bedford, NH 03110<br />

Editorial and Production Office<br />

High <strong>Frequency</strong> Electronics<br />

104 S. Grove Street<br />

Mount Horeb,WI 53572<br />

Also Published Onl<strong>in</strong>e at<br />

www.highfrequencyelectronics.com<br />

Subscription Services<br />

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Tel: 651-292-0629<br />

Fax: 651-292-1517<br />

circulation@highfrequencyelectronics.com<br />

Send subscription <strong>in</strong>quiries and address changes<br />

to the above contact person. You may send them<br />

by mail to the Bus<strong>in</strong>ess Office address above.<br />

Our Environmental Commitment<br />

High <strong>Frequency</strong> Electronics is pr<strong>in</strong>ted<br />

on paper produced us<strong>in</strong>g susta<strong>in</strong>able<br />

forestry practices, certified by<br />

the Program for the Endorsement<br />

of Forest Certification (PEFC),<br />

www.pefc.org<br />

Copyright © 2011, Summit Technical Media, LLC<br />

Re-Th<strong>in</strong>k<strong>in</strong>g How<br />

Products are<br />

Designed and Built<br />

Gary Breed<br />

Editorial Director<br />

In this column, and on our Design Notes<br />

page, I’ve written about energy-efficient<br />

products a few times. It’s one of my non-<br />

RF areas of <strong>in</strong>terest, but it <strong>in</strong>cludes electronic<br />

technology. As “wireless everywhere”<br />

cont<strong>in</strong>ues to grow, almost any electronic or<br />

electromechanical technology, <strong>in</strong>clud<strong>in</strong>g<br />

those used for energy efficiency, fit <strong>in</strong>to the<br />

niche covered <strong>in</strong> these pages.<br />

For example, <strong>in</strong> my home, I have been gradually replac<strong>in</strong>g <strong>in</strong>candscent<br />

bulbs with LED light<strong>in</strong>g. It’s still relatively expensive, but the performance<br />

level—ma<strong>in</strong>ly brightness and a pleas<strong>in</strong>g color of the light—have<br />

rapidly improved over the past couple years. As I’ve kept abreast of LED<br />

advances, one of the comments I recently read stuck with me: LEDs won’t<br />

reach their optimum price/performance level until houses and offices have<br />

electrical systems designed to support them, <strong>in</strong>clud<strong>in</strong>g several entirely<br />

new concepts for the construction trade:<br />

· Complete LED light<strong>in</strong>g fixtures, not just replacements for screw-<strong>in</strong><br />

<strong>in</strong>candescent bulbs or tubular fluorescent lights.<br />

· Voltage and current rat<strong>in</strong>gs of light<strong>in</strong>g system wir<strong>in</strong>g optimized for<br />

these low-voltage devices.<br />

· On/off and dimm<strong>in</strong>g controls located <strong>in</strong> each fixture, controlled wirelessly<br />

with ZigBee or one of the other IEEE 802.15 technologies.<br />

The last item on the above list makes LED fixtures part of an <strong>in</strong>tegrated<br />

household control system, expand<strong>in</strong>g the traditional HVAC (heat<strong>in</strong>g,<br />

ventilation and air condition<strong>in</strong>g) to <strong>in</strong>clude light<strong>in</strong>g—along with<br />

power management and security, all communicat<strong>in</strong>g wirelessly on a network<br />

that can be accessed remotely for the residents’ convenience, utilities’<br />

efficiency optimization, public safety communications and other functions<br />

that may not yet be conceived or developed.<br />

You can see how one item, the LED light<strong>in</strong>g fixture, is capable of be<strong>in</strong>g<br />

l<strong>in</strong>ked to many other pieces of a larger system. Of course, an <strong>in</strong>dividual<br />

homeowner may opt for a less complex system, or may prefer to allow less<br />

control by outside entities. A stand-alone system can use an <strong>in</strong>-home con-<br />

6 High <strong>Frequency</strong> Electronics


troller connected to a few key<br />

devices and appliances and still<br />

make a big difference <strong>in</strong> energy<br />

efficiency, comfort and convenience.<br />

Any <strong>in</strong>tegrated approach must<br />

work from the ground up. When my<br />

own home was built six years ago,<br />

only a few of the construction<br />

tradesmen understood the core concepts<br />

of an energy efficient home—<br />

orientation on the site, control of air<br />

leakage, proper <strong>in</strong>sulation, humidity<br />

control, air circulation, etc.<br />

Fortunately, most of the workers’<br />

bosses understood that these th<strong>in</strong>gs<br />

would eventually become standard<br />

build<strong>in</strong>g practices, even if they were<br />

considered “advanced” at the time.<br />

Expand<strong>in</strong>g on the Lesson<br />

Re-th<strong>in</strong>k<strong>in</strong>g build<strong>in</strong>g construction<br />

is one of the most visible examples<br />

of an evolv<strong>in</strong>g trend. The<br />

“plug-and-play” concept used <strong>in</strong> PC<br />

perpherals and accessories is<br />

another, where the device drivers<br />

are <strong>in</strong>cluded on-board, not <strong>in</strong>stalled<br />

separately. I’d <strong>in</strong>clude many of the<br />

automotive <strong>in</strong>dustry’s features as<br />

well, like tire pressure monitor<strong>in</strong>g,<br />

GM’s OnStar, or us<strong>in</strong>g GPS not just<br />

for navigation, but for monitor<strong>in</strong>g<br />

speed, distance traveled, terra<strong>in</strong><br />

type, elevation, etc.<br />

In the electronics world, we are<br />

now gett<strong>in</strong>g Internet-ready TV sets<br />

and smartphones with far more<br />

capabilities than we imag<strong>in</strong>ed.<br />

Wireless audio and video distribution<br />

is becom<strong>in</strong>g more easily available,<br />

and will eventually be <strong>in</strong>tegrated<br />

with other enterta<strong>in</strong>ment<br />

and communications when they all<br />

are able to support the necessary<br />

bandwidth.<br />

The essence of this recent trend<br />

is the ability for us to employ<br />

devices, appliances—and even <strong>in</strong>dividual<br />

light fixtures—as part of a<br />

larger, <strong>in</strong>tegrated system with<br />

many new capabilities. Some of<br />

those new capabilities are powerful,<br />

such as energy management.<br />

Some are oriented to personal convenience<br />

like navigation systems,<br />

while others are entirely for our<br />

enjoyment and enterta<strong>in</strong>ment,<br />

such as multi-player gam<strong>in</strong>g and<br />

flexible distribution of audio/video<br />

programm<strong>in</strong>g.<br />

As designers, all of you need to<br />

remember that there is no such<br />

CUSTOM<br />

INTEGRATED<br />

ASSEMBLIES<br />

Teledyne Cougar’s RF and<br />

<strong>Microwave</strong> eng<strong>in</strong>eer<strong>in</strong>g and<br />

manufactur<strong>in</strong>g expertise provide<br />

reliable performance-based<br />

solutions for each challenge <strong>in</strong><br />

your design block diagram.<br />

A<br />

th<strong>in</strong>g as “the way it’s always been<br />

done.” The way th<strong>in</strong>gs have been<br />

done recently may seem established,<br />

but when you look at history,<br />

the status quo is a mov<strong>in</strong>g target.<br />

Your job is to take the best<br />

from the past and improve on it to<br />

create “the way it’s go<strong>in</strong>g to be done<br />

tomorrow.”<br />

VHF Band 1.0 Watt Amplifier with RF Bypass (A)<br />

Output of 1 watt from 35 to 350 MHz, 29 dB ga<strong>in</strong> and 3 dB noise figure, this<br />

amplifier assembly <strong>in</strong>corporates an RF bypass switch. You can route the RF<br />

through the amplification stages, or remove the DC bias from the switch and bypass<br />

the amplifier.<br />

2 to 18 GHz 6 Channel Downconverter (B)<br />

Teledyne Cougar's Six Channel 2 - 18 GHz (RF and LO) downconverter operates with<br />

an IF of ~960 MHz, provid<strong>in</strong>g 25 dB of RF-IF ga<strong>in</strong>, and bandwidth of ~500 MHz. This<br />

downconverter operates on a s<strong>in</strong>gle LO at -6 dBm which is amplified, split, then<br />

aga<strong>in</strong> amplified to each of the 6 channels. Integrated <strong>in</strong>to each channel is a range<br />

extension switch, controlled by a TTL <strong>in</strong>put and add<strong>in</strong>g 20 dB attenuation. Noise<br />

figure is ~13.5 dB and output IP3 is ~25 dBm. The downconverter is 2-sided,<br />

hermetically sealed and designed for rugged applications.<br />

17 to 19 GHz QPSK Modulator (C)<br />

Differential Drive Digital QPSK (Quadrature Phase Shift Key<strong>in</strong>g) modulator operates<br />

across the 17.0 to 19.0 GHz frequency range. Modulator utilizes differential drive<br />

digital <strong>in</strong>puts (180° apart) to drive both of the bi-phase modulators (mixers)<br />

<strong>in</strong>tegrated <strong>in</strong>to the assembly. The QPSK modulator provides constant amplitude,<br />

90° vector: 0 (ref.), 90°, 180°, 270° and operates across the -55° to 85° C<br />

temperature range.<br />

Teledyne Cougar is your source for Integrated Subassemblies, RF & <strong>Microwave</strong><br />

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C<br />

B<br />

Get <strong>in</strong>fo at www.HFeL<strong>in</strong>k.com


MEETINGS & EVENTS<br />

CONFERENCES<br />

November 6-9, 2011<br />

60th International Wire & Cable and Connectivity Conf.<br />

Charlotte, NC<br />

Information: Conference Web site<br />

http://www.iwcs.org/meet<strong>in</strong>g11.html<br />

November 10-11, 2011<br />

2011 Korea-Japan <strong>Microwave</strong> Conference<br />

Fukuoka, Japan<br />

Information: Conference Web site<br />

http://www.ieee-jp.org/japancouncil/chapter/MTT-<br />

17/kjmw2011/<br />

November 29- December 1, 2011<br />

Global MilSatCom 2011<br />

London, England<br />

Information: Conference Web site<br />

http://www.smi-onl<strong>in</strong>e.co.uk/2011globalmilsatcom51.asp<br />

November 29- December 2, 2011<br />

ARFTG 78th <strong>Microwave</strong> Measurement Symposium<br />

Tempe, AZ<br />

Information: Conference Web site<br />

http://www.arftg.org<br />

December 5-7, 2011<br />

IEDM—IEEE International Electron Devices Meet<strong>in</strong>g<br />

Wash<strong>in</strong>gton, D.C.<br />

Information: Conference Web site<br />

www.ieee-iedm.org<br />

December 5-8, 2011<br />

2011 Asia-Pacific <strong>Microwave</strong> Conference<br />

Melbourne, Australia<br />

Information: Conference Web site<br />

http://www.apmc2011.com<br />

December 18-20, 2011<br />

IEEE Applied Electromagnetics Conference (AEmC)<br />

and Indian Antenna Week<br />

Calcutta, India<br />

Information: Conference Web site<br />

http://www.ieee-aemc.org<br />

January 15-19, 2012<br />

IEEE Radio and Wireless Symposium, <strong>in</strong>clud<strong>in</strong>g:<br />

• 12th Topical Meet<strong>in</strong>g on Silicon Monolithic<br />

Integrated Circuits <strong>in</strong> RF Systems,<br />

• 2012 IEEE Topical Conference on Biomedical Wireless<br />

Technologies, Networks, and Sens<strong>in</strong>g Systems,<br />

• 2012 IEEE Topical Conference on Wireless Sensors<br />

and Sensor Networks, and<br />

• 2012 Topical Conference on Power Amplifiers for<br />

Wireless and Radio Applications<br />

Santa Clara, CA<br />

Information: Conference Web site<br />

http://www.www.radiowirelessweek.org<br />

March 4-8, 2012<br />

OFC/NFOEC 2012—Optical Fiber Communication and<br />

the National Fiber Optic Eng<strong>in</strong>eers Conference<br />

Los Angeles, CA<br />

Information: Conference Web site<br />

http://www.ofcnfoec.org/Home.aspx<br />

March 5-7, 2012<br />

IEEE International Workshop on Antenna<br />

Technology: Small Antennas and Unconventional<br />

Applications<br />

Tucson, AZ<br />

Information: Conference Web site<br />

http://www.cccmeet<strong>in</strong>gs.com/iwat2012.pdf<br />

April 1-4, 2012<br />

WCNC 2012—IEEE Wireless Communications and<br />

Network<strong>in</strong>g Conference<br />

Paris, France<br />

Information: Conference Web site<br />

http://www.ieee-wcnc.org/2012<br />

April 10-14, 2012<br />

The 28th International Review of Progress <strong>in</strong> Applied<br />

Computational Electromagnetics<br />

Columbus, OH<br />

Information: Conference Web site<br />

http://aces.ee.olemiss.edu<br />

June 10-15, 2012<br />

ICC 2012—IEEE International Conference on<br />

Communications<br />

Ottawa, Canada<br />

Information: Conference Web site<br />

http://www.ieee-icc.org/2012<br />

SHORT COURSES<br />

Besser Associates<br />

201 San Antonio Circle, Suite 115<br />

Mounta<strong>in</strong> View, CA 94040<br />

Tel: 650-949-3300<br />

Fax: 650-949-4400<br />

E-mail: <strong>in</strong>fo@besserassociates.com<br />

http://www.besserassociates.com<br />

Applied RF Techniques I<br />

November 14-18, 2011, Irv<strong>in</strong>g, TX<br />

Understand<strong>in</strong>g Digital Signal Process<strong>in</strong>g (DSP)<br />

November 14-16, 2011, Irv<strong>in</strong>g, TX<br />

Transceiver and Systems Design for Digital<br />

Communications<br />

November 14-16, 2011, Irv<strong>in</strong>g, TX<br />

Applied Analog/Mixed-Signal Measurements<br />

November 14-18, 2011, Irv<strong>in</strong>g, TX<br />

Fundamentals of WCDMA, HSPA & LTE<br />

November 14-16, 2011, Irv<strong>in</strong>g, TX<br />

Power Conversion & Regulation Circuits for VLSI<br />

Systems<br />

November 16-18, 2011, Irv<strong>in</strong>g, TX<br />

8 High <strong>Frequency</strong> Electronics


Components and Integrated Assemblies<br />

Renaissance<br />

20th Year<br />

1991-2011<br />

Electronics<br />

Corporation<br />

Receiver Multi-Coupler<br />

Renaissance Electronics’ Receiver Multi-Coupler Model #14A4NH is designed for next generation commercial<br />

wireless applications. With a very low noise figure, the signal-to-noise ratio of the system improves significantly.<br />

Redundant power supplies require less system ma<strong>in</strong>tenance and lower ma<strong>in</strong>tenance cost. This unit has been field tested<br />

for facilitat<strong>in</strong>g site expansion <strong>in</strong> a cost effective and timely manner.<br />

Multi-Band Comb<strong>in</strong>er<br />

Renaissance Electronics has designed a multi-band comb<strong>in</strong>er Model #18A3BAA for GSM 800/900/1800/1900 &<br />

UMTS frequency bands. This is ideal for <strong>in</strong>-build<strong>in</strong>g distributed antenna systems (DAS) where different operators<br />

require simultaneous coverage without <strong>in</strong>terference.<br />

Surface Mount Circulator<br />

Renaissance Electronics has designed an <strong>in</strong>novative <strong>in</strong>dustry first coplanar Surface Mount Circulator <strong>in</strong> the frequency<br />

bands of 4.2 - 4.4 GHz (3SMH6NA) and 5.3 - 5.9 GHz (3SMH6NB) for radio and radar altimeter applications. This<br />

design is re-flow compatible and suited for pick and place manufactur<strong>in</strong>g practices. This is a new addition to our<br />

surface mount designs.<br />

ADC/DAC Switch Matrix<br />

Renaissance Electronics Corporation has released a new DC to 500 MHz Switch Matrix with two <strong>in</strong>puts and six<br />

outputs. The 18A1NA will support the high level of <strong>in</strong>tegration required dur<strong>in</strong>g qualification test<strong>in</strong>g for digital and<br />

analog assemblies operat<strong>in</strong>g at microwave frequencies.<br />

35 GHz Integrated Transceiver<br />

HXI produces two highly <strong>in</strong>tegrated transceivers to support the ground-based and flight units for a UAV land<strong>in</strong>g<br />

system application. The program has been <strong>in</strong> production for 5+ years us<strong>in</strong>g our parts. The ground-based unit<br />

<strong>in</strong>tegrates 17 <strong>in</strong>dividual Millimeter Wave and IF circuit functions, <strong>in</strong>clud<strong>in</strong>g a 3.5W Ka-band power amplifier<br />

and a SP4T non-reflective switch matrix.<br />

60 GHz & E-Band Radio L<strong>in</strong>ks<br />

We have more high-capacity 60 GHz millimeter wave radios commercially deployed than any other manufacturer. Our<br />

standard off-the-shelf GigaL<strong>in</strong>k radio l<strong>in</strong>ks at 60 GHz and <strong>in</strong> E-Band are now be<strong>in</strong>g marketed worldwide. In addition,<br />

we have produced a number of variants of these radios for military and government usage, <strong>in</strong>clud<strong>in</strong>g analog l<strong>in</strong>ks,<br />

custom antenna configurations, HDTV usage, etc. Standard l<strong>in</strong>ks are full duplex, operate at a data rate of 1.25 Gbps<br />

and have near-zero latency. Each l<strong>in</strong>k is bench and range tested for dynamic range and bit errors.<br />

HDTV L<strong>in</strong>k System for 3D HD Sports Production<br />

Our GigaL<strong>in</strong>k HD wireless system is the ideal solution for the most challeng<strong>in</strong>g temporary deployment applications<br />

where studio quality feeds are essential. Dual channel operation supports 3D-HDTV, multiple camera<br />

feeds or as a redundant hot standby configuration for absolutely critical real-time acquisition.<br />

Millimeter Wave Components<br />

HXI offers a broad range of standard catalog components for use <strong>in</strong> prototyp<strong>in</strong>g new systems and for production<br />

requirements. These components consist of s<strong>in</strong>gle function modules that can easily be configured <strong>in</strong>to subsystems<br />

us<strong>in</strong>g waveguide or coax connections. The modules use mature technology such as GaAs MMICs and beam<br />

lead semiconductor devices, result<strong>in</strong>g <strong>in</strong> well established performance characteristics. The use of many common<br />

stocked parts results <strong>in</strong> low cost and fast delivery. Custom components <strong>in</strong>clude variations of many of our catalog<br />

products, such as LNAs, power amplifiers, frequency multipliers, mixers, switches and isolators/circulators.<br />

We are here to be part of your<br />

current and future <strong>in</strong>novation.<br />

Please contact us at<br />

978-772-7774 or<br />

www.rec-usa.com/Ad/8.html<br />

AS9100 Certified<br />

The New Th<strong>in</strong>k<strong>in</strong>g <strong>in</strong> Wireless Technology


MEETINGS & EVENTS<br />

CMOS RF Design<br />

November 16-18, 2011, Irv<strong>in</strong>g, TX<br />

RF Power Amplifier Techniques<br />

November 16-18, 2011, Irv<strong>in</strong>g, TX<br />

RF Transceiver Architecture, Design and Evaluation<br />

December 5-9, 2011, San Jose, CA<br />

RF and High Speed PC Board Design Fundamentals<br />

December 5-7, 2011, San Jose, CA<br />

Applied RF II: Advanced Wireless and <strong>Microwave</strong><br />

Techniques<br />

December 5-9, 2011, San Jose, CA<br />

Kimmel Gerke Associates, Ltd.<br />

628 LeVander Way<br />

S. St. Paul, MN 55075<br />

Tel: 888-EMI-GURU<br />

http://www.emiguru.com<br />

EMC / SI Sem<strong>in</strong>ars<br />

September 28-29, 2011, Portland, OR<br />

October 10-11, 2011, M<strong>in</strong>neapolis, MN<br />

October 13-14, 2011, Chicago, IL<br />

October 27-28, 2011, San Jose, CA<br />

November 7-8, 2011, Phoenix, AZ<br />

D.L.S. Electronic Systems, Inc.<br />

1250 Peterson Drive<br />

Wheel<strong>in</strong>g, IL 60090<br />

Tel: 847-537-6400<br />

http://www.dlsemc.com<br />

EMC by Your Design—An EMC Practical Applications<br />

Sem<strong>in</strong>ar and Workshop<br />

October 18-20, 2011, Northbrook, IL<br />

Georgia Institute of Technology, Professional Education<br />

PO Box 93686<br />

Atlanta, GA 30377-0686<br />

Tel: 404-385-3500<br />

http://www.pe.gatech.edu<br />

Radar Cross Section Reduction<br />

October 17-19, 2011, Atlanta, GA<br />

Pr<strong>in</strong>ciples of Modern Radar<br />

October 31-November 4, 2011, Atlanta, GA<br />

CALLS FOR PAPERS<br />

IEEE International <strong>Microwave</strong> Symposium<br />

Montreal, Canada<br />

Conference Dates: June 17-22, 2012<br />

Paper Submission Deadl<strong>in</strong>e: December 5, 2011<br />

Topics:<br />

Technical areas <strong>in</strong>clude the follow<strong>in</strong>g: <strong>Microwave</strong> Field<br />

and Circuit Techniques, <strong>in</strong>clud<strong>in</strong>g field analysis and<br />

guided waves, frequency-doma<strong>in</strong> EM analysis techniques,<br />

CAD algorithms and techniques, nonl<strong>in</strong>ear<br />

device model<strong>in</strong>g, and more; Active Components, <strong>in</strong>clud<strong>in</strong>g<br />

semiconductor devices and monolithic ICS, signal<br />

generation, frequency conversion and control, highpower<br />

amplifiers, and more; Passive Components,<br />

<strong>in</strong>clud<strong>in</strong>g transmission l<strong>in</strong>e elements, passive circuit<br />

elements, planar passive filters and multiplexers,<br />

MEMS components and technologies, and more;<br />

Systems and Applications, <strong>in</strong>clud<strong>in</strong>g microwave photonics,<br />

mixed mode and digital signal process<strong>in</strong>g circuits,<br />

<strong>in</strong>strumentation and measurement techniques,<br />

wireless and cellular communication systems, and<br />

more; and Emerg<strong>in</strong>g Technical Areas, <strong>in</strong>clud<strong>in</strong>g RF<br />

nanotechnology, wireless power transmission, <strong>in</strong>novative<br />

systems, and more.<br />

Information:<br />

Authors are <strong>in</strong>vited to submit technical papers describ<strong>in</strong>g<br />

orig<strong>in</strong>al work on radio-frequency, microwave, millimeter-wave,<br />

and terahertz (THz) theory and techniques.<br />

The deadl<strong>in</strong>e for submission is December 5,<br />

2011. Papers should be three pages <strong>in</strong> length (PDF format),<br />

and should not exceed two megabytes <strong>in</strong> file size.<br />

Hardcopy and email submissions will not be accepted.<br />

Please refer to the IMS2012 website (http://<br />

ims2012.mtt.org) for detailed <strong>in</strong>structions concern<strong>in</strong>g<br />

paper submission, as well as an expanded description of<br />

the technical areas. Authors must adhere to the format<br />

provided <strong>in</strong> the conference paper template available on<br />

the symposium’s website.<br />

WAMICON 2012—IEEE Wireless and <strong>Microwave</strong><br />

Technology Conference<br />

Cocoa Beach, FL<br />

Conference Dates: April 16-17, 2012<br />

Paper Submission Deadl<strong>in</strong>e: January 9, 2012<br />

Topics:<br />

Topics of <strong>in</strong>terest <strong>in</strong>clude, but are not limited to, the<br />

follow<strong>in</strong>g: Power Amplifiers, <strong>in</strong>clud<strong>in</strong>g high-efficiency<br />

PAs, novel PA architectures, high-power devices, PA<br />

applications, and more; Active Components and<br />

Systems, <strong>in</strong>clud<strong>in</strong>g transceiver design, system-onchip,<br />

low-power IC, RF/MMIC electronics, and more;<br />

Passive Components and Antennas, <strong>in</strong>clud<strong>in</strong>g filters,<br />

transmission l<strong>in</strong>e components, MEMS, advanced<br />

packag<strong>in</strong>g, antennas and arrays, and more; Wireless<br />

Communications, <strong>in</strong>clud<strong>in</strong>g cognitive radios, wireless<br />

network<strong>in</strong>g, 3G/4G, MIMO, and more; and Emerg<strong>in</strong>g<br />

RF and <strong>Microwave</strong> Technologies, <strong>in</strong>clud<strong>in</strong>g biomedical<br />

applications, wireless sens<strong>in</strong>g, energy harvest<strong>in</strong>g,<br />

wireless power transfer, and more.<br />

Information:<br />

Authors are asked to submit papers electronically, <strong>in</strong><br />

PDF format. In order to be considered for publication<br />

by the Technical Program Committee, a draft with a<br />

m<strong>in</strong>imum of 4 pages (maximum of 8 pages), clearly<br />

describ<strong>in</strong>g the concept and results must be submitted.<br />

The f<strong>in</strong>al manuscript will be requested only after the<br />

paper is accepted. The conference webpage<br />

(www.wamicon.org) has complete details of submission.<br />

Submissions will be evaluated for orig<strong>in</strong>ality, significance<br />

of the work, technical soundness, and <strong>in</strong>terest<br />

to a wide audience.<br />

10 High <strong>Frequency</strong> Electronics


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IN THE NEWS<br />

Bus<strong>in</strong>ess News<br />

Aeroflex Limited, a wholly owned subsidiary of<br />

Aeroflex Hold<strong>in</strong>g Corp., and Lancaster University<br />

announced the <strong>in</strong>auguration of the Aeroflex Wireless<br />

Broadband Laboratory <strong>in</strong> the University’s School of<br />

Comput<strong>in</strong>g and Communications at InfoLab21,<br />

Lancaster’s center for research <strong>in</strong> <strong>in</strong>formation and communication<br />

technologies. The new laboratory is equipped<br />

with $1.4 million worth of test equipment donated by<br />

Aeroflex.<br />

RFMW Europe announces the addition of a new office <strong>in</strong><br />

France. The new office allows RFMW France to <strong>in</strong>troduce<br />

the latest supplier technology to Europe’s rapidly grow<strong>in</strong>g<br />

market. In the past few months, RFMW Europe has<br />

opened offices <strong>in</strong> the UK, Germany, Italy and France to<br />

jo<strong>in</strong> with RFMW Israel <strong>in</strong> cover<strong>in</strong>g Europe, the Middle<br />

East and Africa (EMEA).<br />

SV <strong>Microwave</strong> is announces the sign<strong>in</strong>g of Mouser<br />

Electronics as its newest authorized distributor. Mouser<br />

Electronics is a fast-grow<strong>in</strong>g global catalog and onl<strong>in</strong>e<br />

semiconductor and electronic component distributor.<br />

Mouser is a welcomed addition to the SV <strong>Microwave</strong> sales<br />

team.<br />

L-com, Inc. has partnered with Bertek Import e Com.<br />

Ltda. from Vitoria, Brazil, a division of Stile Comercial, a<br />

trad<strong>in</strong>g company. The partnership allows L-com greater<br />

distribution of both wireless and wired products <strong>in</strong> Brazil.<br />

Agilent Technologies Inc. announced that it has<br />

<strong>in</strong>creased the company’s capability to provide on-site<br />

Z540.3 calibration services at locations from Canada to<br />

Brazil. In March 2010, the Roseville, Calif., service center<br />

became the first commercial calibration lab to be accredited<br />

by A2LA to ANSI/NSCL Z540.3-2006. S<strong>in</strong>ce then, 14<br />

Agilent service centers, many with mobile calibration<br />

teams, have all been accredited to Z540.3 by A2LA. These<br />

centers now offer Z540.3 calibration service for over 500<br />

models, up from 230 dur<strong>in</strong>g the same time period.<br />

ElectriPlast Corporation, a wholly owned subsidiary<br />

of Integral Technologies, Inc. and makers of the<br />

ElectriPlast l<strong>in</strong>e of electrically conductive res<strong>in</strong>s,<br />

announced that Th<strong>in</strong>k Wireless, Inc. has purchased<br />

next generation antenna components eng<strong>in</strong>eered from<br />

ElectriPlast conductive res<strong>in</strong>s for use <strong>in</strong> a new series of<br />

SiriusXM Satellite Radio receivers. The two companies<br />

will also work together to jo<strong>in</strong>tly develop future technologies<br />

<strong>in</strong>corporat<strong>in</strong>g ElectriPlast composites <strong>in</strong>to nextgeneration<br />

Th<strong>in</strong>k Wireless products and devices.<br />

National Instruments announced that it is donat<strong>in</strong>g<br />

design tools to the Massachusetts Institute of<br />

Technology (MIT) to help expand the use of NI software<br />

and hardware <strong>in</strong> the MIT Department of Mechanical<br />

Eng<strong>in</strong>eer<strong>in</strong>g via 10 mechatronics, robotics, manufactur<strong>in</strong>g,<br />

control and design courses over the next five years.<br />

The donation will <strong>in</strong>clude products such as the NI<br />

LabVIEW Control Design and Simulation Module, the NI<br />

LabVIEW MathScript RT Module, NI PXI <strong>in</strong>strumentation,<br />

NI CompactRIO and NI S<strong>in</strong>gle-Board RIO.<br />

OML, Inc. celebrates their 20th Anniversary s<strong>in</strong>ce startup<br />

<strong>in</strong> 1991 by offer<strong>in</strong>g an extended 3-year warranty on all<br />

millimeter wave products purchased between January 1,<br />

2011 and December 31, 2012. This promotion only applies<br />

to products purchased directly from OML, Inc. that satisfy<br />

our standard terms and conditions. This warranty<br />

reduces overall cost-of-ownership and demonstrates our<br />

commitment for manufactur<strong>in</strong>g both <strong>in</strong>novative and reliable<br />

millimeter wave measurement solutions.<br />

SGS Consumer Test<strong>in</strong>g Services is expand<strong>in</strong>g <strong>in</strong> the<br />

U.S. with the open<strong>in</strong>g of a new electrical and electronics<br />

lab <strong>in</strong> Atlanta dedicated exclusively to test<strong>in</strong>g and certify<strong>in</strong>g<br />

electrical and electronic (E&E) products. The new<br />

lab will evaluate the electromagnetic capability, battery<br />

and energy efficiency, and safety compliance of products<br />

<strong>in</strong> dozens of categories rang<strong>in</strong>g from medical devices and<br />

home electronics to office equipment, light<strong>in</strong>g products<br />

and laboratory equipment.<br />

Wireless Telecom Group has been awarded a 5-year<br />

supply agreement by Rob<strong>in</strong> Warner Air Force Base for<br />

Boonton 4542 high performance RF power analyzers.<br />

These RF power analyzers are used to service and ma<strong>in</strong>ta<strong>in</strong><br />

Radar and control systems for the Global Hawk<br />

unmanned aerial vehicle (UAV). Global Hawk UAVs are<br />

equipped with Synthetic-Aperture Radars (SAR) that can<br />

provide details of target areas with resolutions of less<br />

than 10 cm (4 <strong>in</strong>ch). SAR use relative motion between the<br />

Radar antenna and the target. This radar system repeatedly<br />

transmits high power pulses of various frequencies<br />

(“chirps”) to a target and receives multiple echo waveforms<br />

that are stored. Post-process<strong>in</strong>g of the received<br />

<strong>in</strong>formation creates images reveal<strong>in</strong>g the most subtle<br />

details.<br />

Ethertronics announced that its active antenna technology<br />

has been selected by MEPS Real-Time for its<br />

Intelliguard RFID Solutions for Critical Inventory. This<br />

selection is the latest example of Ethertronics’ ability to<br />

provide advanced RF and antenna system solutions<br />

where high performance and reliability are critical.<br />

mimoOn announced its collaboration with Texas<br />

Instruments Incorporated (TI) for 3GPP compliant<br />

LTE PHY software. TI will offer complete PHY software<br />

for LTE Release 8 and 9 for its KeyStone multicore architecture,<br />

with a specific focus on its newest TMS320TCI-<br />

6612 and TMS320TCI6614 System-on-Chips (SoCs).<br />

These SoCs are especially designed for small cell base<br />

stations <strong>in</strong> the enterprise, pico and metro markets.<br />

Mouser Electronics, Inc. is partner<strong>in</strong>g with Anaren,<br />

Inc. to stock its new family of FCC-, IC- and ETSI- compliant<br />

Integrated Radio (AIR) modules. Anaren’s AIR<br />

product family <strong>in</strong>corporates Texas Instruments low-<br />

12 High <strong>Frequency</strong> Electronics


4G 4 U<br />

Dual RF Mixer Needs Only 600mW<br />

Actual Size<br />

LTC5569 Total Solution Size:


IN THE NEWS<br />

power RF technology to offer a “plug and play” RF solution<br />

for electronic eng<strong>in</strong>eers challenged with add<strong>in</strong>g<br />

wireless capability to new or exist<strong>in</strong>g devices.<br />

Applications for AIR modules range from <strong>in</strong>dustrial control,<br />

build<strong>in</strong>g automation, and low-power sensor networks<br />

to light<strong>in</strong>g and equipment and appliances <strong>in</strong>tended<br />

for <strong>in</strong>clusion <strong>in</strong> smart-grid scenarios (e.g., automated<br />

smart meter<strong>in</strong>g).<br />

Ultra low power RF specialist Nordic Semiconductor<br />

ASA announces that the Compex Wireless, a wireless<br />

muscle electro-stimulator—as used by HTC-Highroad,<br />

the cycl<strong>in</strong>g team of top 2011 Tour de France spr<strong>in</strong>ter<br />

Mark Cavendish—employs Nordic nRF24LE1 proprietary<br />

2.4 GHz Systems-on-Chip (SoCs) and targets professional<br />

athletes and serious consumer sports and fitness<br />

enthusiasts such as marathon runners and keen<br />

cyclists. The Compex Wireless employs mechanical<br />

biofeedback (“mi-SCAN”) technology to automatically and<br />

safely adjust the stimulation sett<strong>in</strong>gs to the specificities<br />

of each muscle. Electro muscle stimulation has long been<br />

used by elite professional athletes both dur<strong>in</strong>g tra<strong>in</strong><strong>in</strong>g<br />

(to stress key target muscles) and between tra<strong>in</strong><strong>in</strong>g sessions<br />

and competitive events (to accelerate recovery<br />

cycles and treat common <strong>in</strong>tensive tra<strong>in</strong><strong>in</strong>g ailments such<br />

as lower back pa<strong>in</strong>). The Compex Wireless is the first electro-stimulator<br />

to the offer the convenience of wireless to<br />

maximize application freedom and comfort without the<br />

risk of users gett<strong>in</strong>g tangled up <strong>in</strong> trail<strong>in</strong>g cables.<br />

People <strong>in</strong> the News<br />

Modelithics, Inc. announces the addition of John Fisher<br />

as member of the Modelithics management<br />

team. Fisher has over 29 years of<br />

eng<strong>in</strong>eer<strong>in</strong>g and management experience,<br />

<strong>in</strong>clud<strong>in</strong>g extensive background<br />

<strong>in</strong> <strong>in</strong>ternational product development<br />

as well as <strong>in</strong> executive management<br />

roles. His experience <strong>in</strong> process and<br />

product management along with previous<br />

roles as Director of Eng<strong>in</strong>eer<strong>in</strong>g<br />

and VP of Sales and Market<strong>in</strong>g will be<br />

a valuable asset <strong>in</strong> Modelithics’ goals. Fisher earned a BS <strong>in</strong><br />

Electrical Eng<strong>in</strong>eer<strong>in</strong>g from the University of Central<br />

Florida along with a MS <strong>in</strong> Electrical Eng<strong>in</strong>eer<strong>in</strong>g and a<br />

MBA from the University of South Florida.<br />

Nujira announced the appo<strong>in</strong>tment of Patrick McNamee<br />

to the newly created post of VP of<br />

Silicon Operations with overall responsibility<br />

for tak<strong>in</strong>g its Envelope<br />

Track<strong>in</strong>g ICs from design completion to<br />

volume production. Patrick McNamee<br />

has over 25 years experience <strong>in</strong> the<br />

semiconductor <strong>in</strong>dustry <strong>in</strong>clud<strong>in</strong>g 15<br />

years senior management experience<br />

with successful fabless semiconductor<br />

companies such as Powervation,<br />

Cambridge Silicon Radio (CSR) and Dialog Semiconductor.<br />

Patrick McNamee jo<strong>in</strong>s Nujira from EoSemi, a UK based<br />

start-up with novel <strong>in</strong>tellectual property <strong>in</strong> the field of silicon<br />

timers. Prior to EoSemi, Patrick was VP of Operations<br />

at Powervation, a fabless digital power IC technology company.<br />

Prior to this, he spent seven years as VP of Product<br />

Eng<strong>in</strong>eer<strong>in</strong>g at Cambridge Silicon Radio and eight years as<br />

Product Eng<strong>in</strong>eer<strong>in</strong>g Manager at Dialog Semiconductor.<br />

Earlier <strong>in</strong> his career, Patrick held test and product development<br />

positions at senior eng<strong>in</strong>eer level with National<br />

Semiconductor and GEC Plessey. He is a Director and<br />

Board Member of the National Microelectronics Institute<br />

(NMI).<br />

Anatech Electronics appo<strong>in</strong>ted Dean Handr<strong>in</strong>os as director<br />

of U.S. sales, with the responsibility of develop<strong>in</strong>g new<br />

bus<strong>in</strong>ess and manag<strong>in</strong>g of the company’s<br />

sales activities throughout the<br />

country, <strong>in</strong>clud<strong>in</strong>g work<strong>in</strong>g with regional<br />

sales representatives. Mr. Handr<strong>in</strong>os<br />

comes to Anatech from Stealth<br />

<strong>Microwave</strong> (a division of Micronetics),<br />

where he was vice president and<br />

responsible for bus<strong>in</strong>ess development<br />

and technical sales of the company’s<br />

power amplifier products. He was previously<br />

sales and market<strong>in</strong>g manager for Stealth. Mr.<br />

Handr<strong>in</strong>os received his Bachelor of Eng<strong>in</strong>eer<strong>in</strong>g degree<br />

from Stevens Institute of Technology and is currently work<strong>in</strong>g<br />

toward his MBA degree from Lehigh University.<br />

AR RF/<strong>Microwave</strong> Instrumentation has announced<br />

that Jay Osselburn has jo<strong>in</strong>ed the<br />

company as a Senior Product-Eng<strong>in</strong>eer<br />

for the “A” Series of RF power amplifiers.<br />

These amplifiers offer coverage<br />

up to 400 MHz and power up to 16,000<br />

watts and beyond. Mr. Osselburn<br />

br<strong>in</strong>gs over 20 years of experience <strong>in</strong><br />

the RF <strong>in</strong>dustry to his new position at<br />

AR. His background <strong>in</strong>cludes design<strong>in</strong>g<br />

and develop<strong>in</strong>g RF amplifier and transmitter<br />

systems, as well as lead<strong>in</strong>g the teams of eng<strong>in</strong>eers<br />

work<strong>in</strong>g on these products. His most recent work was as a<br />

Senior Project Eng<strong>in</strong>eer at Innovation Eng<strong>in</strong>eer<strong>in</strong>g, Inc.,<br />

and throughout his career, he has worked at a variety of<br />

eng<strong>in</strong>eer<strong>in</strong>g companies creat<strong>in</strong>g products that have helped<br />

to move the RF <strong>in</strong>dustry forward.<br />

Giga-tronics Incorporated announces that Mr. Mark<br />

Elo jo<strong>in</strong>ed the Company as Vice President of Market<strong>in</strong>g<br />

effective August 29, 2011. Mr. Elo comes to Giga-tronics<br />

with more than 20 years of test and measurement experience<br />

<strong>in</strong> RF and microwave <strong>in</strong>strumentation. He has held<br />

various positions at Hewlett-Packard/Agilent Technologies<br />

and Keithley Instruments—<strong>in</strong>clud<strong>in</strong>g Product Market<strong>in</strong>g<br />

Manager, Market<strong>in</strong>g Director and Bus<strong>in</strong>ess Development<br />

Director—as well as number of R&D management roles.<br />

Mr. Elo will be responsible for the market<strong>in</strong>g of all Gigatronics<br />

products and for keep<strong>in</strong>g new <strong>in</strong>vestment programs<br />

aligned with their target markets.<br />

14 High <strong>Frequency</strong> Electronics


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HIGH FREQUENCY APPLICATIONS<br />

Research News<br />

The Massachusetts Institute of Technology has announced the creation of the MIT/MTL Center for Graphene<br />

Devices and Systems (MIT-CG—www-mtl.mit.edu/wpmu/graphene/). This <strong>in</strong>terdepartmental center, part of the<br />

Microsystems Technology Laboratories (MTL), br<strong>in</strong>gs together MIT researchers and <strong>in</strong>dustrial partners to advance the<br />

science and eng<strong>in</strong>eer<strong>in</strong>g of graphene-based technologies.<br />

Graphene, a form of pure carbon arranged <strong>in</strong> an hexagonal lattice just one atom thick, has generated great excitement<br />

among researchers worldwide for its unique properties that stand to revolutionize materials science and electronics.<br />

Until recently, most studies have focused on the basic physical properties of graphene. Work at the new Center<br />

will go beyond this research, explor<strong>in</strong>g advanced technologies and strategies that will lead to graphene-based materials,<br />

devices and systems for a variety of applications, <strong>in</strong>clud<strong>in</strong>g graphene-enabled systems for energy generation,<br />

smart fabrics and materials, radio-frequency communications, and sens<strong>in</strong>g, to name a few.<br />

Researchers at the International Center for Materials Nanoarchitectonics (MANA—www.nims.go.jp/<br />

mana/<strong>in</strong>dex.html) demonstrate for the first time the key features <strong>in</strong> the neuroscience and psychology of memory by a<br />

AgS 2<br />

synapse. Artificial neural networks have attracted attention as a means to a better understand<strong>in</strong>g of biological<br />

neural networks, as well as aid<strong>in</strong>g developments <strong>in</strong> artificial <strong>in</strong>telligence. The complex and <strong>in</strong>terconnected nature of<br />

thought processes make neural behavior difficult to reproduce <strong>in</strong> artificial structures without software programm<strong>in</strong>g.<br />

Now Takeo Ohno and researchers at the International Center for Materials Nanoarchitectonics (MANA), Tsukuba,<br />

Japan, and the University of California have mimicked synaptic activity with the electroionic behavior of a nanoscale<br />

AgS2 electrode.<br />

The researchers observed a temporary higher-conductance state <strong>in</strong> the AgS 2<br />

system follow<strong>in</strong>g an <strong>in</strong>cident electric<br />

pulse. Repetition of the <strong>in</strong>put pulse over two second <strong>in</strong>tervals led to permanently higher conductance. These two<br />

responses mimic the short-term plasticity and long-term potentiality <strong>in</strong> biological synapses. In the most widely accepted<br />

‘multistore’ model of memory <strong>in</strong> human psychology, new <strong>in</strong>formation is stored briefly as a sensory memory.<br />

Rehearsal converts short-term memory to long-term. When demonstrat<strong>in</strong>g memorization of the numerals ‘1’ and ‘2’ <strong>in</strong><br />

a 7 × 7 <strong>in</strong>organic synapse array, the behaviour of the artificial synapse <strong>in</strong>dicated ‘multistore’ memory rather than a<br />

conventional switch. The researchers add, “The data <strong>in</strong>dicate that we may apply a psychlogical memory model simultaneously<br />

with the emulation of biological synaptic-like behaviour.”<br />

Mitsuteru Inoue and colleagues at Toyohashi University of Technology (Toyohashi Tech—www.tut.ac.jp/english/)<br />

have developed high sensitivity magnetic sensors us<strong>in</strong>g magnonic crystals—artificial magnetic crystal structures<br />

capable of controll<strong>in</strong>g the propagation of magnetostatic waves. Magnonic crystals support the propagation of magnetostatic<br />

waves through the crystal sp<strong>in</strong> system or suppress the propagation of waves due to the periodicity of the crystal<br />

structure.<br />

In this research the Toyohashi Tech researchers fabricated magnonic crystals by the direct formation of one-dimensional<br />

arrays of metal strips on yttrium iron garnet (YIG)—a ferromagnetic material widely used <strong>in</strong> the magneto-electronics<br />

<strong>in</strong>dustry—which serves as the propagation medium. The metal stripes <strong>in</strong>duce an attenuation band <strong>in</strong> the frequency<br />

spectra of the magnonic crystal and restrict the propagation of waves of specific frequencies. Even at room temperature,<br />

the output signal of the devices—frequency of the attenuation band—is very sensitive to external magnetic<br />

fields applied to the YIG crystal, where a one Oersted change <strong>in</strong> the field causes a 2.6 MHz shift <strong>in</strong> the attenuation<br />

band gap. Importantly, the maximum detection sensitivity of the magnonic crystals is more than 10 times greater that<br />

of giant magneto-impedance devices. Next the researchers are plann<strong>in</strong>g to demonstrate the measurement of magnetic<br />

fields <strong>in</strong> three dimensions.<br />

A Theory Unify<strong>in</strong>g Gravity and Electromagnetism, the two long range forces of nature, has been presented by Dr.<br />

John Brandenburg, a plasma physicist at a Symposium on Str<strong>in</strong>g Theory Phenomenology at the University of<br />

Wiscons<strong>in</strong> (www.wisc.edu) <strong>in</strong> Madison Wiscons<strong>in</strong>. This new unified field theory yields a highly accurate formula of<br />

one of the most important physical constants <strong>in</strong> the Cosmos: The Newton Gravitation constant G. The unification theory,<br />

called simply the GEM theory, from the words Gravity Electro-Magnetism, completes the quest of E<strong>in</strong>ste<strong>in</strong>, who<br />

labored until his death to unify gravity and electro-magnetism. The theory l<strong>in</strong>ks gravity to an effect widely known <strong>in</strong><br />

plasma physics called the “E × B drift” which effects all particles the same, and is similar to the radiation pressure<br />

exerted by light. Among the predictions of the GEM theory is that gravity can be modified directly by strong electromagnetic<br />

fields, lead<strong>in</strong>g to anti-gravity technologies, and that even wormholes for warp drive may someday be created<br />

electro-magnetically. A description of the theory has also been published <strong>in</strong> the Journal of Cosmology. The theory is<br />

expected to undergo extensive analysis and review <strong>in</strong> the scientific community.<br />

16 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

FREQUENCY SYNTHESIZERS<br />

<strong>Implement<strong>in</strong>g</strong> <strong>Modulation</strong><br />

<strong>Functions</strong> <strong>in</strong> <strong>Microwave</strong><br />

<strong>Frequency</strong> Synthesizers<br />

By Alexander Chenak<strong>in</strong><br />

Phase Matrix, Inc.<br />

The ma<strong>in</strong> function<br />

This article reviews the of a frequency synthesizer<br />

is to deliv-<br />

typical methods for implement<strong>in</strong>g<br />

modulation with<strong>in</strong> er a stable and clean signal.<br />

However, many<br />

a frequency synthesizer<br />

<strong>in</strong>strument or system applications require not<br />

only a fixed frequency<br />

signal but also various modulation functions<br />

rang<strong>in</strong>g from simple pulse, amplitude, frequency<br />

and phase modulation to complex digital<br />

modulation formats. Although modulators<br />

are usually realized as external devices,<br />

they can also be <strong>in</strong>corporated <strong>in</strong>to a frequency<br />

synthesizer core. Inside any synthesizer<br />

there are many circuits that can carry multiple<br />

functions and be reused to <strong>in</strong>crease the<br />

functionality without a significant <strong>in</strong>crease <strong>in</strong><br />

cost. This results <strong>in</strong> a more cost efficient and<br />

versatile design. The most commonly used<br />

modulation schemes are briefly reviewed <strong>in</strong><br />

this article. Further details on modulation<br />

theory and implementation techniques can be<br />

found <strong>in</strong> [1-7].<br />

Figure 1 · Pulse modulation is implemented<br />

by <strong>in</strong>sert<strong>in</strong>g a switch <strong>in</strong>to the synthesizer output<br />

path.<br />

Pulse <strong>Modulation</strong><br />

Pulse modulation is probably the simplest<br />

modulation form. It is achieved by switch<strong>in</strong>g<br />

the output signal on and off <strong>in</strong> accordance with<br />

the applied modulat<strong>in</strong>g pulses. The result is a<br />

sequence of RF pulses that replicate (or tend to<br />

replicate) the <strong>in</strong>put modulat<strong>in</strong>g signal. The<br />

m<strong>in</strong>imum RF pulse width, rise time, fall time<br />

and overshoot are important characteristics<br />

that def<strong>in</strong>e how well the modulat<strong>in</strong>g signal is<br />

replicated. Typical rise time and fall time numbers<br />

required are <strong>in</strong> the order of 10 nanoseconds.<br />

Pulse modulation on/off ratio is another<br />

critical parameter. A typical specification is<br />

80 dB or higher. The modulat<strong>in</strong>g signal frequency<br />

(also called rate) can be between DC<br />

and several megahertz. Pulse modulation is<br />

practically implemented by <strong>in</strong>sert<strong>in</strong>g a switch<br />

(or a cha<strong>in</strong> of switches for a higher on/off ratio)<br />

<strong>in</strong>to the synthesizer output path as depicted <strong>in</strong><br />

Figure 1. The switch can be built us<strong>in</strong>g PIN-<br />

Figure 2 · A pulse modulator is <strong>in</strong>tegrated<br />

<strong>in</strong>to a switched filter bank.<br />

20 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

FREQUENCY SYNTHESIZERS<br />

diodes or FET devices that support<br />

nanosecond switch<strong>in</strong>g. A high-pass<br />

filter follows the switch to suppress<br />

the leakage of the modulat<strong>in</strong>g<br />

signal (called video feedthrough)<br />

to the synthesizer output.<br />

Alternatively, the pulse modulator<br />

can be conveniently comb<strong>in</strong>ed<br />

with a switched filter bank<br />

used for harmonic (or subharmonic)<br />

rejection. The idea is to reduce<br />

the design complexity and cost by<br />

utiliz<strong>in</strong>g the same devices for<br />

both functions. Furthermore, no<br />

additional loss is <strong>in</strong>troduced that<br />

eases requirements for the output<br />

power amplifier. In this case, the<br />

pulse modulator <strong>in</strong>corporates a<br />

digital decoder (as shown <strong>in</strong> Fig.<br />

2) to control the switches <strong>in</strong> such<br />

a manner that they will provide<br />

the highest possible isolation<br />

(on/off ratio) for any given frequency<br />

subband.<br />

Amplitude <strong>Modulation</strong><br />

Amplitude modulation (AM)<br />

historically has been one of the<br />

most popular methods for carry<strong>in</strong>g<br />

<strong>in</strong>formation via RF frequencies. It<br />

is realized by vary<strong>in</strong>g the output<br />

signal amplitude <strong>in</strong> accordance<br />

with an applied modulat<strong>in</strong>g signal.<br />

The simplest way to implement<br />

AM is to control the <strong>in</strong>sertion loss<br />

of an attenuator <strong>in</strong>serted <strong>in</strong>to the<br />

synthesizer output circuit as<br />

depicted <strong>in</strong> Figure 3. This can be<br />

naturally comb<strong>in</strong>ed with an openloop<br />

amplitude control as depicted<br />

<strong>in</strong> Figure 4. The synthesizer is first<br />

commanded to set a desired output<br />

power level by programm<strong>in</strong>g DAC<br />

(digital-to-analog converter) voltage.<br />

Then a modulat<strong>in</strong>g voltage is<br />

applied over the DAC voltage to<br />

vary the output signal around its<br />

nom<strong>in</strong>al value. Naturally, the output<br />

power cannot be set at its<br />

highest (or lowest) level because<br />

certa<strong>in</strong> headroom is needed to<br />

allow further power changes. The<br />

maximum power variation (which<br />

can also be expressed <strong>in</strong> terms of<br />

modulation <strong>in</strong>dex or depth) is<br />

achieved by sett<strong>in</strong>g the output<br />

power level <strong>in</strong> the middle of its<br />

control range. Another important<br />

requirement is l<strong>in</strong>earity because<br />

the modulator must translate the<br />

modulat<strong>in</strong>g signal with m<strong>in</strong>imal<br />

distortion. This may further limit a<br />

realizable modulation depth.<br />

Various l<strong>in</strong>earization techniques<br />

can be applied to m<strong>in</strong>imize AM signal<br />

distortion. In some cases, it is<br />

desirable to implement not a l<strong>in</strong>ear<br />

but a logarithmic modulat<strong>in</strong>g<br />

scale, mean<strong>in</strong>g that the output<br />

power changes <strong>in</strong> dB per volt. This<br />

mode is utilized for large power<br />

variations (e.g., for simulation of<br />

rotat<strong>in</strong>g antenna patterns) and is<br />

called deep AM.<br />

Alternatively, amplitude modulation<br />

can be implemented by<br />

summ<strong>in</strong>g the modulat<strong>in</strong>g signal<br />

<strong>in</strong>to the ALC (automatic level control)<br />

loop as shown <strong>in</strong> Figure 5. In<br />

general, the ALC-based amplitude<br />

modulation offers better l<strong>in</strong>earity<br />

and repeatability characteristics.<br />

However, the modulation<br />

depth may be limited by the available<br />

ALC dynamic range, which,<br />

<strong>in</strong> turn, depends on the utilized<br />

detector. The maximum modulat<strong>in</strong>g<br />

signal rate is also lower compared<br />

to the open-loop alternative<br />

because of the settl<strong>in</strong>g time of the<br />

closed-loop ALC system.<br />

<strong>Frequency</strong> and Phase<br />

<strong>Modulation</strong><br />

<strong>Frequency</strong> modulation (FM) is<br />

another popular form of analog<br />

modulation that offers better signal<br />

immunity compared to AM.<br />

The process of produc<strong>in</strong>g a frequency-modulated<br />

signal <strong>in</strong>volves<br />

the variation of the synthesizer<br />

output frequency <strong>in</strong> accordance<br />

with the modulat<strong>in</strong>g signal. The<br />

frequency bandwidth where the<br />

synthesized signal fluctuates is<br />

proportional to the peak amplitude<br />

of the modulat<strong>in</strong>g signal and<br />

is called frequency deviation. FM<br />

Figure 3 · Amplitude modulation is realized<br />

us<strong>in</strong>g a voltage-controlled attenuator.<br />

Figure 4 · Amplitude modulation is comb<strong>in</strong>ed<br />

with an open-loop amplitude control.<br />

Figure 5 · Amplitude modulation can be<br />

realized by summ<strong>in</strong>g the modulat<strong>in</strong>g signal<br />

<strong>in</strong>to the ALC loop.<br />

22 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

FREQUENCY SYNTHESIZERS<br />

Figure 6 · <strong>Frequency</strong> and phase<br />

modulation.<br />

Figure 7 · <strong>Frequency</strong> modulation is<br />

realized by modulat<strong>in</strong>g the VCO tun<strong>in</strong>g<br />

voltage.<br />

Figure 8 · A modulat<strong>in</strong>g signal is<br />

applied to the reference oscillator.<br />

can also be described by modulation<br />

<strong>in</strong>dex, which is the ratio of the maximum<br />

frequency deviation to the frequency<br />

of the modulat<strong>in</strong>g signal.<br />

Note that we can vary not only the<br />

frequency but also the phase of the<br />

synthesized signal, thus produc<strong>in</strong>g<br />

phase modulation (PM). Both processes<br />

are quite similar because <strong>in</strong> both<br />

cases we vary the argument (the<br />

angle) of the same s<strong>in</strong>e function as<br />

illustrated <strong>in</strong> Figure 6. Hence, the<br />

angular modulation is a more general<br />

case that represents both FM and PM.<br />

The difference is not <strong>in</strong> the output signal<br />

waveform but rather <strong>in</strong> the modulator<br />

circuit configuration; that is,<br />

what parameter (frequency or phase)<br />

is directly proportional to the amplitude<br />

of the modulat<strong>in</strong>g signal. Because<br />

the <strong>in</strong>stantaneous angular frequency<br />

is mathematically the time derivative<br />

Figure 9 · A phase shifter provides a<br />

phase modulation function.<br />

Figure 10 · <strong>Frequency</strong> modulation is<br />

realized by controll<strong>in</strong>g the DDS output<br />

frequency.<br />

of the phase, it is possible to convert<br />

FM to PM (and vise versa) by add<strong>in</strong>g<br />

an <strong>in</strong>tegrator (or differentiator) circuit<br />

<strong>in</strong>to the modulat<strong>in</strong>g signal path.<br />

How can we modulate the synthesizer<br />

output frequency? From first<br />

glance, it is quite straightforward—we<br />

can simply modulate (i.e., change) the<br />

VCO (voltage-controlled oscillator)<br />

tun<strong>in</strong>g voltage around the value where<br />

it is settled. The problem, however, is<br />

that the synthesizer’s PLL (phaselock-loop)<br />

core will tend to correct any<br />

voltage change we <strong>in</strong>troduce. Most<br />

likely, we will lose this battle unless we<br />

change the tun<strong>in</strong>g voltage so fast that<br />

the PLL will not be able to react to the<br />

change. This is exactly the idea that<br />

stands beh<strong>in</strong>d a so-called wideband<br />

FM modulation mode. The FM modulator<br />

is built by add<strong>in</strong>g a circuit (e.g.,<br />

an operational amplifier) that sums an<br />

external modulat<strong>in</strong>g signal with the<br />

control voltage delivered by PLL as<br />

depicted <strong>in</strong> Figure 7. The PLL rema<strong>in</strong>s<br />

locked all the time, thus ensur<strong>in</strong>g that<br />

the overage output frequency<br />

rema<strong>in</strong>s correct. For proper operation,<br />

the modulat<strong>in</strong>g signal rate<br />

has to be well above the loop filter<br />

bandwidth. Thus, the PLL filter<br />

bandwidth is adjusted (narrowed<br />

down) to allow lower modulat<strong>in</strong>g<br />

rates. As a result, the phase noise<br />

usually <strong>in</strong>creases when FM is<br />

enabled. Typical achievable modulat<strong>in</strong>g<br />

rates range from a few<br />

kilohertz to tens of megahertz.<br />

What if we need to apply a<br />

lower-frequency modulat<strong>in</strong>g signal?<br />

Obviously, we have to further<br />

decrease the loop filter<br />

bandwidth, which may not<br />

always be possible because of<br />

prohibitory high VCO free-runn<strong>in</strong>g<br />

phase noise at low frequency<br />

offsets. An alternative solution<br />

is to modulate not the VCO but<br />

the reference oscillator as shown<br />

<strong>in</strong> Figure 8. If the modulat<strong>in</strong>g<br />

signal rate is sufficiently low, the<br />

PLL will track the reference frequency<br />

change and, hence, translate<br />

the modulation to the VCO<br />

output. This mode is often called narrowband<br />

FM because the modulat<strong>in</strong>g<br />

frequency must be with<strong>in</strong> PLL filter<br />

bandwidth. The loop filter bandwidth<br />

should be set as wide as possible to<br />

allow higher modulat<strong>in</strong>g rates.<br />

Typical rates start from nearly DC to<br />

a few tens of kilohertz. Thus, the narrowband<br />

mode complements its wideband<br />

counterpart to extend the overall<br />

modulat<strong>in</strong>g frequency range.<br />

A disadvantage of this technique<br />

is low achievable deviation caused by<br />

very low tun<strong>in</strong>g sensitivity of the reference<br />

oscillator. Although the reference<br />

frequency deviation is multiplied<br />

up by the PLL at the 20logN rate, the<br />

synthesizer output deviation may be<br />

<strong>in</strong>sufficient. A higher deviation can be<br />

achieved by chang<strong>in</strong>g not the reference<br />

frequency but rather its phase as<br />

depicted <strong>in</strong> Figure 9. This represents<br />

a classical phase modulation; however,<br />

both forms are <strong>in</strong>terchangeable.<br />

Practical implementation requires a<br />

phase shifter that can be purchased<br />

24 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

FREQUENCY SYNTHESIZERS<br />

Figure 11 · A signal is presented as<br />

a vector on a polar diagram.<br />

or can be built us<strong>in</strong>g discrete devices<br />

such as varactor diodes.<br />

An <strong>in</strong>terest<strong>in</strong>g solution is to control<br />

the division ratio of a frequency<br />

divider <strong>in</strong>serted <strong>in</strong>to either the PLL<br />

reference or feedback path as illustrated<br />

<strong>in</strong> Figure 10. The divider has<br />

to be a high-resolution device such as<br />

a fractional-N divider or DDS (direct<br />

digital synthesizer). The modulat<strong>in</strong>g<br />

signal is first digitized by an ADC<br />

(analog-to-digital converter) and then<br />

is summed with the DDS tun<strong>in</strong>g<br />

word to vary the DDS’s output frequency.<br />

Because the DDS offers<br />

exceptionally small frequency <strong>in</strong>crements<br />

and a fast update rate, a simple<br />

yet high-performance FM (or PM)<br />

modulator can be constructed.<br />

Complex <strong>Modulation</strong><br />

More effective modulation formats<br />

are possible by simultaneously vary<strong>in</strong>g<br />

both amplitude and phase. The<br />

simplest way to visualize such a complex<br />

signal is to draw it as a vector on<br />

a polar diagram. The amplitude and<br />

phase are represented as the length<br />

and the angle of the vector as shown<br />

<strong>in</strong> Figure 11. In digital communication<br />

systems, such a signal is expressed <strong>in</strong><br />

I (<strong>in</strong>-phase) and Q (quadrature) terms,<br />

which are projections of the signal vector<br />

on a correspond<strong>in</strong>g orthogonal<br />

axis. Therefore, the amplitude and<br />

phase modulation assumes the change<br />

of the signal vector, which can be conveniently<br />

accomplished by vary<strong>in</strong>g<br />

two <strong>in</strong>dependent IQ-components.<br />

Figure 12 · IQ-modulator block<br />

diagram.<br />

Hence, such a complex modulation is<br />

called vector or IQ-modulation.<br />

Vector modulation can be applied<br />

directly at RF frequencies by utiliz<strong>in</strong>g<br />

an IQ-modulator. It consists of two<br />

identical mixers driven with a 90-<br />

degree phase shift at their LO (local<br />

oscillator) ports as shown <strong>in</strong> Figure 12.<br />

The base-band data signals are<br />

applied directly to the mixer IF (<strong>in</strong>termediate<br />

frequency) ports, upconverted,<br />

and summed together with no phase<br />

shift between them. The result<strong>in</strong>g output<br />

is an IQ-modulated signal at the<br />

same carrier frequency as the LO. The<br />

quality of the synthesized signal can<br />

be tested by apply<strong>in</strong>g two base-band<br />

signals of the same frequency and<br />

amplitude with a 90-degree phase<br />

shift with respect to each other. For a<br />

perfect modulator, only one sideband<br />

should be present. However, <strong>in</strong> reality,<br />

the output signal conta<strong>in</strong>s another<br />

sideband because of imperfect amplitude<br />

and phase balance. For example,<br />

equaliz<strong>in</strong>g the signal paths with<strong>in</strong> 1<br />

dB (amplitude) and 10 degrees (phase)<br />

results <strong>in</strong> approximately a 20-dB sideband<br />

rejection. Naturally, better rejection<br />

is required. Moreover, an LO leakage<br />

also takes place. The undesired<br />

sideband can be further suppressed by<br />

adjust<strong>in</strong>g the amplitude and phase of<br />

the applied IQ signals. The LO leakage<br />

can be controlled by adjust<strong>in</strong>g DC offset<br />

voltages for the diodes used <strong>in</strong> the<br />

balanced mixers. Therefore, it is generally<br />

possible to calibrate the modulator<br />

characteristics to a degree where it can<br />

be practically utilized. The difficulty is<br />

that this calibration has to be implemented<br />

at many frequencies across the<br />

entire operat<strong>in</strong>g range. Moreover, the<br />

calibration has to survive over time<br />

and temperature changes. Thus,<br />

achiev<strong>in</strong>g a good image and LO leakage<br />

suppression for a broadband, highfrequency,<br />

direct IQ-modulator is a<br />

very challeng<strong>in</strong>g task.<br />

An alternative solution is to create<br />

a desired IQ-modulated signal at a<br />

lower, fixed frequency and then<br />

upconvert it to microwave frequencies<br />

as illustrated <strong>in</strong> Figure 13. Obviously,<br />

it is much easier to achieve better<br />

cancellation of undesired products at<br />

a s<strong>in</strong>gle (and lower frequency) po<strong>in</strong>t.<br />

However, the difficulty now moves to<br />

the upconversion side. We still need to<br />

remove the undesired sideband and<br />

LO leakage posted by the second (regular)<br />

mixer. However, because the<br />

product separation is much larger<br />

(compared to the direct IQ-modulation),<br />

a hardware filter can be used.<br />

For a broadband operation, a YIGtuned<br />

filter is a simple and effective<br />

solution. The disadvantage of the YIG<br />

filter is slow tun<strong>in</strong>g speed and relatively<br />

narrow pass-band that can be<br />

<strong>in</strong>sufficient <strong>in</strong> certa<strong>in</strong> applications. A<br />

switched filter bank (Fig. 14) offers<br />

better characteristics. However, it<br />

requires a larger number of channels<br />

(compared to devices used for harmonic<br />

and sub-harmonic filter<strong>in</strong>g)<br />

and, hence, is hardware extensive.<br />

This results <strong>in</strong> a more complex system<br />

design and posts other challenges<br />

(e.g., achiev<strong>in</strong>g high isolation between<br />

filter channels, etc.).<br />

In the past, complex microwave<br />

assemblies were often built us<strong>in</strong>g<br />

<strong>in</strong>dividual connectorized modules<br />

connected with coaxial cables. The<br />

designer could easily isolate and<br />

ref<strong>in</strong>e <strong>in</strong>dividual blocks to make them<br />

perfect. These days, such assemblies<br />

have to be made on a common PCB<br />

us<strong>in</strong>g t<strong>in</strong>y surface-mount parts. A<br />

great effort is required to m<strong>in</strong>imize<br />

<strong>in</strong>teractions between <strong>in</strong>dividual components<br />

sitt<strong>in</strong>g on the same board.<br />

Furthermore, many parts are reused<br />

26 High <strong>Frequency</strong> Electronics


Figure 13 · Upconversion us<strong>in</strong>g a tunable filter.<br />

“If what you want is<br />

RF Power, high performance,<br />

reliability, and customization,<br />

then we are a No Bra<strong>in</strong>er”<br />

Figure 14 · A broadband upconverter based on a<br />

switched filter bank.<br />

to accomplish different functions, which are distributed<br />

through the whole assembly. The net result is a significant<br />

<strong>in</strong>crease <strong>in</strong> “design density,” mean<strong>in</strong>g both component<br />

count and functionality per square <strong>in</strong>ch. All these factors<br />

drastically complicate the design process. Nevertheless,<br />

this seems to be a “must” approach these days.<br />

References<br />

1. Manassewitsch, V., <strong>Frequency</strong> Synthesizers: Theory<br />

and Design, 3rd ed., NJ: Wiley, 2005.<br />

2. Gardner, F. M., Phaselock Techniques, 3rd ed., NJ:<br />

Wiley, 2005.<br />

3. Crawford, J. A., Advanced Phase-Lock Techniques,<br />

MA: Artech House, 2008.<br />

4. Coombs, C. F., Jr., (ed.), Electronic Instrument<br />

Handbook, 3rd ed., New York: McGraw-Hill, 1999.<br />

5. Terman, F. E., Electronic and Radio Eng<strong>in</strong>eer<strong>in</strong>g,<br />

New York: McGraw-Hill, 1955.<br />

6. Gentile, K., “Fundamentals of Digital Quadrature<br />

<strong>Modulation</strong>,” RF Design, February 2003, pp. 40-47.<br />

7. Chenak<strong>in</strong>, A., <strong>Frequency</strong> Synthesizers: Concept to<br />

Product, Norwood, MA: Artech House, 2010.<br />

Author Information<br />

Dr. Alexander Chenak<strong>in</strong> is the vice president of the<br />

Signal Sources Group at Phase Matrix, Inc., where he oversees<br />

the development of advanced frequency synthesizer<br />

products for test-and-measurement applications. His professional<br />

achievements have been widely presented <strong>in</strong> trade<br />

publications and <strong>in</strong>ternational conferences. Dr. Chenak<strong>in</strong><br />

can be reached by phone at 408-954-6409 or by e-mail at<br />

achenak<strong>in</strong>@ phasematrix.com.<br />

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High <strong>Frequency</strong> Products<br />

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28 High <strong>Frequency</strong> Electronics


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Amplifier Technology Ltd. has developed a new range of<br />

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30 High <strong>Frequency</strong> Electronics


QUALITY, PERFORMANCE AND RELIABILITY<br />

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IEEE Wireless and <strong>Microwave</strong> Technology Conference<br />

WAMICON 2012<br />

Hilton Cocoa Beach FL<br />

April 16 & 17 2012<br />

www.wamicon.org<br />

General Chair<br />

Xun Gong, University of Central Florida<br />

xun.gong@ucf.edu<br />

General Vice-Chair<br />

Joel Johnson, Harris<br />

wjohns19@harris.com<br />

Technical Program Co-Chairs<br />

J<strong>in</strong>g Wang, University of South Florida<br />

j<strong>in</strong>gw@usf.edu<br />

Changzhi Li, Texas Tech. University<br />

changzhi.li@ttu.edu<br />

Tutorials Chair<br />

Ray Pengelly, Cree Inc.<br />

ray_pengelly@cree.com<br />

Invited Papers Co-Chairs<br />

Mohamed Sayed, MMS<br />

mmsayed@sbcglobal.net<br />

Jenshan L<strong>in</strong>, University of Florida<br />

jenshan@ieee.org<br />

Juan-Mari Collantes, University of the Basque Country<br />

juanmari.collantes@ehu.es<br />

F<strong>in</strong>ance Chair<br />

Heather Qu<strong>in</strong>ones, ATK<br />

heather.qu<strong>in</strong>ones@atk.com<br />

Local Arrangements Chair<br />

Lester Lopez, Harris<br />

llopez04@harris.com<br />

Exhibits & Sponsorship Co-Chairs<br />

Ryan Baker, Cree<br />

ryan_baker@cree.com<br />

Scott Maynard, AWR<br />

smaynard@awrcorp.com<br />

Publicity Chair<br />

Michael Hallman, <strong>Microwave</strong> Journal<br />

mhallman@mwjournal.com<br />

Publications Chair<br />

Gary Breed, High <strong>Frequency</strong> Electronics<br />

gary@highfrequencyelectronics.com<br />

Poster Session Chair<br />

Kamran Entesari, Texas A&M University<br />

kentesar@mail.ece.tamu.edu<br />

Registration Chair<br />

Gokhan Mumcu, University of South Florida<br />

mumcu@usf.edu<br />

Website Chair<br />

Kim McPeek, Trak <strong>Microwave</strong><br />

kmcpeek@trak.com<br />

Awards Chair<br />

Richard Abrahams, Harris<br />

rabrah01@harris.com<br />

Paper Competition Chair<br />

Jane Gu, University of Florida<br />

qgu@ece.ufl.edu<br />

IEEE Liaisons<br />

Jenshan L<strong>in</strong>, University of Florida<br />

jenshan@ieee.org<br />

WAMICON Advisors<br />

Larry Dunleavy, University of South Florida<br />

ldunleavy@modelithics.com<br />

Tom Weller, University of South Florida<br />

weller@usf.edu<br />

Submission Deadl<strong>in</strong>e Jan 9, 2012<br />

The 13 th annual IEEE Wireless and <strong>Microwave</strong> Technology Conference<br />

(WAMICON 2012) will be held <strong>in</strong> the beautiful Cocoa Beach area <strong>in</strong> Florida. The<br />

conference will address up-to-date multidiscipl<strong>in</strong>ary research needs and<br />

<strong>in</strong>terdiscipl<strong>in</strong>ary aspects of wireless and RF technology. The program <strong>in</strong>cludes oral<br />

presentations, poster presentations, workshops, and tutorials. Prospective authors are<br />

<strong>in</strong>vited to submit orig<strong>in</strong>al and high-quality work for presentation at the WAMICON<br />

and for publication <strong>in</strong> IEEEXplore. The technical program will cover wireless<br />

communication systems and RF technologies.<br />

Topics of Interest Include:<br />

Power Amplifiers (PAs)<br />

High-Efficiency PAs, L<strong>in</strong>earization and Efficiency Enhancement Techniques and<br />

Topologies, Novel PA Architectures, High-Power Devices, L<strong>in</strong>ear and Nonl<strong>in</strong>ear<br />

Device Model<strong>in</strong>g and CAD, Thermal Considerations and Reliabilities, PA<br />

Applications<br />

Active Components and Systems<br />

Transceiver Design, Multi-Band RF Circuits and Systems, System-On-Chip,<br />

System-In-Package, Low-Power IC, Low-Noise IC, Radar RF/MMIC Electronics,<br />

Terahertz Electronics, Active (Non-Foster) Filters and Non-Foster Impedance<br />

Match<strong>in</strong>g<br />

Passive Components and Antennas<br />

Filters, Transmission L<strong>in</strong>e Components, MEMS, Advanced Packag<strong>in</strong>g, Antennas<br />

and Arrays, Meta-Materials, Electromagnetic Bandgap Structures<br />

Wireless Communications<br />

Cognitive Radios, Wireless Network<strong>in</strong>g, 3G/4G, Ultra-Wideband (UWB), MIMO,<br />

Multi-Carrier, Spread Spectrum, Channel Characterization and Model<strong>in</strong>g,<br />

Software Def<strong>in</strong>ed Radios (SDR)<br />

Emerg<strong>in</strong>g RF and <strong>Microwave</strong> Technologies<br />

Biomedical Applications, Wireless Sens<strong>in</strong>g, Energy Harvest<strong>in</strong>g, Wireless Power<br />

Transfer, Nano Devices and Circuits<br />

Paper Submission Instructions<br />

Authors are asked to submit papers electronically, <strong>in</strong> pdf format. In order to be<br />

considered for publication by the Technical Program Committee, a m<strong>in</strong>imum of 4<br />

pages (maximum of 8 pages), clearly describ<strong>in</strong>g the concept and results must be<br />

submitted. The f<strong>in</strong>al manuscript will be requested only after the paper is accepted. The<br />

conference webpage at www.wamicon.org has complete details of submission.<br />

Submissions will be evaluated for orig<strong>in</strong>ality, significance of the work, technical<br />

soundness, and <strong>in</strong>terest to a wide audience.<br />

Important Dates<br />

Papers Due: Jan. 9, 2012<br />

Author Notification: Jan. 30, 2012<br />

F<strong>in</strong>al Papers Due: Feb. 13, 2012


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High <strong>Frequency</strong> Products<br />

CIRCUIT ENVELOPE<br />

Circuit Envelope Simulation:<br />

A Powerful Resource for<br />

4G Power Amplifier Design<br />

By Josh Moore<br />

AWR Corporation<br />

This issue’s cover features<br />

AWR’s circuit envelope<br />

simulation, which allows<br />

desg<strong>in</strong>ers to analyze how<br />

circuit design choices<br />

affect performance with<br />

modulated signals<br />

Designers of RF<br />

power amplifiers<br />

for 3G and 4G<br />

wireless systems face<br />

conflict<strong>in</strong>g challenges<br />

unlike those they have<br />

encountered before. For<br />

example, while today’s<br />

higher-order modulation<br />

schemes require exceptional l<strong>in</strong>earity<br />

throughout both transmit and receive signal<br />

paths, wireless carriers require the highest<br />

possible efficiency at the system level.<br />

Optimiz<strong>in</strong>g a circuit for one parameter <strong>in</strong>variably<br />

requires sacrific<strong>in</strong>g performance of the<br />

other. Comb<strong>in</strong>e this and other unavoidable<br />

design conflicts with demands for greater<br />

<strong>in</strong>stantaneous bandwidth and designers<br />

<strong>in</strong>deed have a conundrum. Achiev<strong>in</strong>g acceptable<br />

solutions requires not just standard timedoma<strong>in</strong><br />

and frequency-doma<strong>in</strong> simulators but<br />

the unique contributions of circuit envelope<br />

simulation as well. This tool is seamlessly<br />

<strong>in</strong>tegrated with<strong>in</strong> AWR 2011, and together<br />

with <strong>Microwave</strong> Office and Visual System<br />

Simulator (VSS) software, it can shave time<br />

from the design process while produc<strong>in</strong>g highperformance,<br />

manufacturable products.<br />

The appeal of circuit envelope simulation<br />

results from its ability to more efficiently simulate<br />

complex digital waveforms than can<br />

time-doma<strong>in</strong> and frequency-doma<strong>in</strong> simulators<br />

such as harmonic balance (HB) and<br />

SPICE. The technique does not disregard the<br />

<strong>in</strong>herent advantages of these venerable simulators<br />

but rather builds on their unique characteristics<br />

by comb<strong>in</strong><strong>in</strong>g modulation data <strong>in</strong><br />

the time doma<strong>in</strong> and carrier signals <strong>in</strong> the frequency<br />

doma<strong>in</strong>. It delivers a spectrum that<br />

gives designers access to the modulation <strong>in</strong>formation<br />

(i.e. amplitude and phase) of every<br />

harmonic of the signal as they evolve over<br />

time. The result is the ability to analyze complex<br />

digitally-modulated waveforms fast and<br />

with greater accuracy than with the aforementioned<br />

simulators alone.<br />

The further advantages provided by AWR’s<br />

circuit envelope simulation result from its<br />

synergy with the other tools with<strong>in</strong> the AWR<br />

2011 Design Suite. That is, <strong>Microwave</strong> Office<br />

high-frequency design software <strong>in</strong>corporates<br />

thermal device effects and captures distributed<br />

design elements <strong>in</strong> a complete l<strong>in</strong>ear and<br />

steady-state nonl<strong>in</strong>ear design suite. Its circuit<br />

representation flows seamlessly <strong>in</strong>to the system-level<br />

environment of VSS, where circuit<br />

envelope simulation is then employed to monitor<br />

voltage and current waveforms <strong>in</strong> seconds<br />

rather than the m<strong>in</strong>utes or hours required by<br />

transient solvers. With access to DC dissipated<br />

power as an output and any number of DC<br />

36 High <strong>Frequency</strong> Electronics


High <strong>Frequency</strong> Products<br />

CIRCUIT ENVELOPE<br />

Figure 1 · Inf<strong>in</strong>eon power amplifier viewed with<strong>in</strong> AWR 2011 (circuit envelope<br />

schematic, layout, 3D view and simulation results).<br />

<strong>in</strong>put p<strong>in</strong>s to an underly<strong>in</strong>g<br />

<strong>Microwave</strong> Office power amplifier circuit,<br />

VSS and circuit envelope simulation<br />

can enable complex active<br />

feedback, dynamic bias<strong>in</strong>g, or<br />

MAC/PHY layer simulation scenarios.<br />

Beyond Harmonic Balance<br />

Harmonic balance is the basic<br />

nonl<strong>in</strong>ear simulation eng<strong>in</strong>e for RF<br />

and microwave design, solv<strong>in</strong>g for<br />

nonl<strong>in</strong>ear, steady-state voltages and<br />

currents <strong>in</strong> the frequency doma<strong>in</strong>. As<br />

long as the signals of <strong>in</strong>terest are<br />

periodic, HB eng<strong>in</strong>es are computationally<br />

efficient, very fast, and produce<br />

excellent results when provided<br />

with good models.<br />

Harmonic balance, however<br />

assumes that the data stream is periodic.<br />

So, when simulat<strong>in</strong>g a complex<br />

modulated signal (common to modern<br />

digital communication systems) with<br />

an arbitrary bit stream, the period of<br />

the <strong>in</strong>put signal must be at least as<br />

long as the stream of <strong>in</strong>put data.<br />

When sampled appropriately, this<br />

leads to a huge number of spectral<br />

frequencies that must all be solved<br />

for simultaneously via HB techniques.<br />

Likewise, when simulat<strong>in</strong>g<br />

memory effects us<strong>in</strong>g HB simulation<br />

techniques for example, their aperiodicity<br />

must first be reformulated as<br />

a predictable signal. Corre-lation<br />

effects, not part of the actual physical<br />

phenomena, can then creep <strong>in</strong>to the<br />

results and cause <strong>in</strong>accuracies.<br />

Another limitation of HB perta<strong>in</strong>s<br />

to circuit/system-level co-simulation.<br />

When it is advantageous to <strong>in</strong>clude<br />

feedback with<strong>in</strong> the system simulation—where<br />

the circuit simulation is<br />

controlled by the system simulation<br />

us<strong>in</strong>g previous circuit simulation<br />

time samples—this type of co-simulation<br />

simply cannot be performed with<br />

a steady state HB circuit simulator.<br />

Enter Circuit Envelope Simulation<br />

To capture dynamic operat<strong>in</strong>g<br />

phenomena such as memory effects,<br />

time-doma<strong>in</strong> simulation is required,<br />

usually <strong>in</strong> the form of a transient,<br />

SPICE-type solver which, unlike HB,<br />

requires the entire waveform to be<br />

sampled. A 5 MHz-wide modulated<br />

signal on a 2 GHz carrier, for example,<br />

would require an <strong>in</strong>teger multiple<br />

(N) of 2 GHz as a sampl<strong>in</strong>g frequency.<br />

If the simulated signal frame<br />

is 10 ms long, the simulation eng<strong>in</strong>e<br />

must simulate N ×2GHz×10ms =<br />

N × 2e7 samples to achieve results.<br />

While this will produce a solution, so<br />

many time steps are required that<br />

simulation speed slows to a crawl.<br />

Circuit envelope simulation<br />

assumes that the <strong>in</strong>put waveform has<br />

somewhat different characteristics.<br />

Unlike HB, time-doma<strong>in</strong> techniques<br />

such as SPICE and circuit envelope<br />

can capture non-periodic dynamic<br />

operat<strong>in</strong>g-po<strong>in</strong>t <strong>in</strong>formation required<br />

for simulat<strong>in</strong>g memory effects.<br />

Rather than sampl<strong>in</strong>g the RF carrier,<br />

circuit envelope simulation samples<br />

only the modulation envelope. In the<br />

example above, this translates <strong>in</strong>to<br />

N×5 MHz × 10 ms samples which is<br />

a 400x reduction <strong>in</strong> the number of<br />

time steps. Each time sample <strong>in</strong> a circuit<br />

envelope simulation is effectively<br />

solv<strong>in</strong>g the harmonic balance equations<br />

at the modulation carrier and<br />

related harmonic frequencies, so a<br />

s<strong>in</strong>gle time sample <strong>in</strong> envelope is<br />

more expensive than a s<strong>in</strong>gle SPICE<br />

transient time po<strong>in</strong>t (typically 10 to<br />

100x slower) and thus a 400x reduction<br />

<strong>in</strong> time samples would result <strong>in</strong><br />

a 4 to 40x improvement <strong>in</strong> circuit<br />

envelope simulation time versus that<br />

of SPICE. As the modulation bandwidth<br />

<strong>in</strong>creases, the benefits of circuit<br />

envelope simulation will<br />

decrease, and for very wide band<br />

modulation, a SPICE type simulation<br />

will more than likely be faster.<br />

Circuit envelope simulation is a<br />

perfect co-simulation match for VSS,<br />

which also samples the modulation<br />

envelope while creat<strong>in</strong>g, demodulat<strong>in</strong>g,<br />

and analyz<strong>in</strong>g modulated waveforms<br />

such as GSM, EDGE, WCDMA,<br />

and LTE. Circuit envelope simulation<br />

lets designers place N-port <strong>Microwave</strong><br />

Office circuit schematics directly<br />

<strong>in</strong>to VSS system diagrams and<br />

simulate them to see how they<br />

behave <strong>in</strong> the presence of modulated<br />

waveforms. Dynamic voltages and<br />

currents and thus power-added efficiency<br />

can be of value weighted as<br />

well. The AWR software environment<br />

makes it possible to easily move<br />

between simulators and analysis<br />

techniques. Schematic elements correspond<strong>in</strong>g<br />

to analyses and measurements<br />

can have multiple roles allow<strong>in</strong>g<br />

l<strong>in</strong>ear, HB, transient, and circuit<br />

38 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Products<br />

CIRCUIT ENVELOPE<br />

Figure 2 · Circuit envelope nonl<strong>in</strong>ear simulation-based <strong>in</strong>stance of<br />

Inf<strong>in</strong>eon power amplifier<br />

envelope simulation to coexist <strong>in</strong> the<br />

same schematic.<br />

As circuit envelope (Figure 1) is a<br />

time-doma<strong>in</strong> technique, it is necessary<br />

to specify voltage and current<br />

probe-po<strong>in</strong>ts on the schematic.<br />

Traditional <strong>in</strong>put/output ports for the<br />

design are handled by PORT elements.<br />

Additional probes are also<br />

placed at the dra<strong>in</strong> and <strong>in</strong> the DC<br />

bias path to supply DC voltage and<br />

monitor RF and DC voltage and current.<br />

Furthermore, s<strong>in</strong>ce circuit envelope<br />

simulation is not restricted to<br />

the DC, fundamental, and harmonic<br />

Figure 3 · Complete VSS diagram with circuit envelope co-simulation and<br />

predistortion.<br />

elements of an HB analysis, the decision<br />

about where to place probes can<br />

be made based on much broader set<br />

of design criteria than signal sources<br />

and paths. The time-doma<strong>in</strong> aspect of<br />

circuit envelope simulation allows<br />

design criteria like dynamic bias<br />

amplifiers, bias turn-down, or active<br />

equalization to be <strong>in</strong>corporated <strong>in</strong>to<br />

the simulation as well.<br />

Prior to <strong>in</strong>corporat<strong>in</strong>g the power<br />

amplifier <strong>in</strong> a circuit envelope test<br />

bench <strong>in</strong> VSS software, a hierarchical<br />

element must be created with<strong>in</strong><br />

<strong>Microwave</strong> Office. The “subckt” element<br />

represent<strong>in</strong>g the power amplifier<br />

design (Figure 2) has a typical<br />

PORT <strong>in</strong>put driven by a source and a<br />

correspond<strong>in</strong>g PORT output, but the<br />

element is augmented by five additional<br />

p<strong>in</strong>s def<strong>in</strong>ed by the (NCONN)-<br />

named connectors: two voltage supply<br />

l<strong>in</strong>es, one RF voltage monitor, one<br />

RF current monitor, and one DC current<br />

monitor.<br />

Mov<strong>in</strong>g on to the envelope<br />

schematic, the complete power amplifier<br />

can be assembled from its constituent<br />

parts. The device with<strong>in</strong><br />

<strong>Microwave</strong> Office software can be<br />

comb<strong>in</strong>ed with other elements such<br />

as digital pre-distortion, filter<strong>in</strong>g,<br />

and antenna and channel models.<br />

Port def<strong>in</strong>itions are added to the element<br />

to describe port functionality<br />

relative to the circuit simulation so<br />

the <strong>in</strong>put port or ports, output ports,<br />

and DC or bias <strong>in</strong>put l<strong>in</strong>es can be controlled<br />

and monitored. Total DC<br />

power dissipation can be monitored<br />

as a separate port, calculated with<strong>in</strong><br />

the <strong>Microwave</strong> Office simulation, and<br />

then ported to VSS and circuit envelope<br />

for analyses of power-added efficiency<br />

and other DC-related parameters.<br />

The FCOUTSPEC parameter<br />

specifies the harmonic around which<br />

the envelope is to be simulated. Both<br />

RF and DC can be <strong>in</strong>dicated for each<br />

of the output ports.<br />

RF source and signal blocks comb<strong>in</strong>ed<br />

with a Vector Signal Analyzer<br />

(VSA) block determ<strong>in</strong>e the simulation<br />

criteria. A voltage source is<br />

added to control the DC bias <strong>in</strong>to the<br />

power amplifier, which <strong>in</strong> a more<br />

advanced design could be dynamic<br />

bias<strong>in</strong>g, active time-doma<strong>in</strong> circuitry,<br />

or MAC or PHY layer control, and<br />

even <strong>in</strong>clud<strong>in</strong>g feedback, because the<br />

voltage p<strong>in</strong> is with<strong>in</strong> the VSS/circuit<br />

envelope time-doma<strong>in</strong> environment.<br />

This is not available <strong>in</strong> l<strong>in</strong>ear or HB<br />

analyses alone. In Figure 3, a digital<br />

predistortion circuit precedes the<br />

power amplifier <strong>in</strong> the signal path to<br />

create a more efficient, highly-l<strong>in</strong>ear<br />

design solution that could not be<br />

designed with only a time-doma<strong>in</strong> or<br />

40 High <strong>Frequency</strong> Electronics


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<strong>Frequency</strong> Ga<strong>in</strong> Ga<strong>in</strong> Noise VSWR Output Power Nom.<br />

Model Range (M<strong>in</strong>./Max.) Flatness Figure IN/OUT @ 1 dB Comp. DC Power<br />

Number (GHz) (dB) (±dB) (dB, Max.) (Max.) (dBm, M<strong>in</strong>.) (+15 V, mA)<br />

OCTAVE BAND AMPLIFIERS<br />

AFS3-00120025-09-10P-4 0.12-.25 38 0.50 0.9 2.0:1 +10 125<br />

AFS3-00250050-08-10P-4 0.25-0.5 38 0.50 0.8 2.0:1 +10 125<br />

AFS3-00500100-06-10P-6 0.5-1 38 0.75 0.6 2.0:1/1.5:1 +10 150<br />

AFS3-01000200-05-10P-6 1-2 38 1.00 0.5 2.0:1 +10 150<br />

AFS3-01200240-06-10P-6 1.2-2.4 34 1.00 0.6 2.0:1 +10 150<br />

AFS3-02000400-06-10P-4 2-4 32 1.00 0.6 2.0:1 +10 125<br />

AFS3-02600520-10-10P-4 2.6-5.2 28 1.00 1.0 2.0:1 +10 125<br />

AFS3-04000800-07-10P-4 4-8 32 1.00 0.7 2.0:1 +10 100<br />

AFS3-08001200-09-10P-4 8-12 28 1.00 0.9 2.0:1 +10 80<br />

AFS3-08001600-15-8P-4 8-16 28 1.00 1.5 2.0:1 +8 100<br />

AFS4-12001800-18-10P-4 12-18 28 1.50 1.8 2.0:1 +10 125<br />

JS4-18002600-22-10P 18-26 35 1.50 2.2 2.0:1 +10 200<br />

JS3-18004000-40-15P 18-40 32 2.70 4.0 2.6:1 +15 400*<br />

JS4-18004000-30-5P 18-40 23 2.50 3.0 2.5:1 +5 200<br />

JS42-18004000-31-8P 18-40 35 3.50 3.1 2.5:1 +8 300<br />

JS1-26004000-100-19P 26-40 17 2.50 10.0 2.5:1 +19 400*<br />

JS4-26004000-30-8P 26-40 23 2.50 3.0 2.5:1 +8 200<br />

JS42-26004000-31-8P 26-40 37 3.50 3.1 2.5:1 +8 300<br />

MULTIOCTAVE BAND AMPLIFIERS<br />

AFS3-00500200-08-15P-4 0.5-2 38 1.00 0.8 2.0:1 +15 125<br />

AFS3-01000400-10-10P-4 1-4 30 1.50 1.0 2.0:1 +10 125<br />

AFS3-02000800-09-10P-4 2-8 26 1.00 0.9 2.0:1 +10 125<br />

AFS4-02001800-24-10P-4 2-18 35 2.50 2.4 2.5:1 +10 175<br />

AFS4-06001800-22-10P-4 6-18 25 2.00 2.2 2.0:1 +10 125<br />

AFS4-08001800-22-10P-4 8-18 28 2.00 2.2 2.0:1 +10 125<br />

ULTRA WIDEBAND AMPLIFIERS<br />

AFS3-00100100-09-10P-4 0.1-1 38 1.00 0.9 2.0:1 +10 125<br />

AFS3-00100200-10-15P-4 0.1-2 38 1.00 1.0 2.0:1 +15 150<br />

AFS3-00100300-12-10P-4 0.1-3 34 1.00 1.2 2.0:1 +10 125<br />

AFS3-00100400-13-10P-4 0.1-4 30 1.00 1.3 2.0:1 +10 125<br />

AFS3-00100600-13-10P-4 0.1-6 30 1.25 1.3 2.0:1 +10 125<br />

AFS3-00100800-14-10P-4 0.1-8 28 1.50 1.4 2.0:1 +10 125<br />

AFS4-00101200-22-10P-4 0.1-12 30 1.50 2.2 2.0:1 +10 150<br />

JS4-00102000-25-10P 0.1-20 29 2.00 2.5** 2.5:1 +10 200<br />

JS4-00102600-30-10P 0.1-26 28 2.50 3.0** 2.5:1 +10 200<br />

JS4-00104000-54-5P 0.1-40 30 3.00 5.4** 2.5:1 +5 200<br />

Noise figure <strong>in</strong>creases below 500 MHz.<br />

* Dual Voltage, -8V@50 mA. ** Above 800 mHz.<br />

This is only a small sample of our extensive list of standard catalog items.<br />

Please contact our Sales Department at (631) 439-9220 or e-mail components@miteq.com<br />

for additional <strong>in</strong>formation or to discuss your custom requirements.<br />

100 Davids Drive, Hauppauge, NY 11788<br />

TEL.: (631) 436-7400 • FAX: (631) 436-7430<br />

www.miteq.com<br />

Get <strong>in</strong>fo at www.HFeL<strong>in</strong>k.com


Eng<strong>in</strong>eers:<br />

Stay Informed!<br />

Subscribe to<br />

High <strong>Frequency</strong><br />

Electronics!<br />

Be on top of your game:<br />

Figure 4 · Multi-carrier spectrum, time doma<strong>in</strong> waveforms, as well as dra<strong>in</strong><br />

current and voltage for Inf<strong>in</strong>eon PA as simulated by AWR 2011 software<br />

featur<strong>in</strong>g circuit envelope technology.<br />

• Timely technical articles<br />

• New product <strong>in</strong>formation<br />

• Industry news and events<br />

• Knowledgeable editors<br />

HB simulator.<br />

The analysis results provide all<br />

the <strong>in</strong>formation required for system<br />

and circuit co-design without constra<strong>in</strong>ts<br />

on the simulation techniques<br />

used (Figure 4). Harmonic content,<br />

spectral masks, P <strong>in</strong><br />

-versus-P out<br />

curves, and ga<strong>in</strong> all can be analyzed<br />

with AWR’s new circuit envelope<br />

technology. Additionally, these<br />

results can now be comb<strong>in</strong>ed with<br />

time-doma<strong>in</strong> analyses, such as collector<br />

current and voltage waveforms<br />

and RF perturbations of DC bias<br />

l<strong>in</strong>es. Active turn-down through simulated<br />

control of DC p<strong>in</strong>s can also be<br />

explored and analyzed. Waveforms<br />

and outputs are cont<strong>in</strong>ually updated<br />

based on user-specified sampl<strong>in</strong>g and<br />

averag<strong>in</strong>g criteria and can run realtime,<br />

which allows tun<strong>in</strong>g and optimization<br />

with<strong>in</strong> both <strong>Microwave</strong><br />

Office and VSS software.<br />

Summary<br />

The str<strong>in</strong>gent demands of the<br />

higher-order modulation schemes<br />

employed <strong>in</strong> today's lead<strong>in</strong>g-edge<br />

wireless systems make it essential<br />

that all ASP banks of RF power<br />

amplifier performance be taken <strong>in</strong>to<br />

consideration. The <strong>in</strong>tegration of circuit<br />

envelope simulation with<strong>in</strong> the<br />

AWR 2011 design suite and its seamless<br />

<strong>in</strong>teraction with VSS allow<br />

designers to create amplifiers that<br />

deliver both high l<strong>in</strong>earity and efficiency<br />

are of broad bandwidths that<br />

could not otherwise be achieved.<br />

Acknowledgements<br />

AWR would like to thank Inf<strong>in</strong>eon<br />

for their assistance with the test<strong>in</strong>g<br />

of this new feature from AWR. The<br />

design shown <strong>in</strong> all figures is courtesy<br />

of Inf<strong>in</strong>eon Technologies and corresponds<br />

to their ELMO models for<br />

LD9-based smart discrete devices.<br />

Author Information<br />

Josh Moore, a University of<br />

Ill<strong>in</strong>ois Eng<strong>in</strong>eer<strong>in</strong>g alumnus, is<br />

presently a Solution Architect with<br />

AWR. Before jo<strong>in</strong><strong>in</strong>g AWR, Josh spent<br />

several years at Nokia as an RF<br />

design eng<strong>in</strong>eer work<strong>in</strong>g on base station<br />

and mobile device receivers, and<br />

at Agilent Technologies as an ADS<br />

Application Eng<strong>in</strong>eer.<br />

For more <strong>in</strong>formation contact:<br />

AWR Corporation<br />

www.awrcorp.com<br />

Tel: 310-726-3000<br />

E-mail: <strong>in</strong>fo@awrcorp.com<br />

Subscribe onl<strong>in</strong>e at our Web site:<br />

just click on the “Subscriptions”<br />

button on our ma<strong>in</strong> page, www.<br />

highfrequencyelectronics.com<br />

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Editions!<br />

• Both editions are identical<br />

• Onl<strong>in</strong>e = no mail delay!<br />

• L<strong>in</strong>k to advertisers<br />

• F<strong>in</strong>d articles quickly<br />

SUBSCRIBE or<br />

RENEW TODAY!<br />

www.<br />

highfrequencyelectronics<br />

.com<br />

October 2011 43


TECHNOLOGY REPORT<br />

News Update on Cable<br />

and Connector Bus<strong>in</strong>ess<br />

and Technology<br />

For this month’s report, we felt the best way to<br />

report on recent developments <strong>in</strong> cables and connectors<br />

was to present recent new product and<br />

technology announcements from various suppliers of<br />

these essential components.<br />

Power Connector for Tower-Mounted Base Stations<br />

Amphenol Industrial (www.amphenol-<strong>in</strong>dustrial.com )<br />

has <strong>in</strong>troduced Amphe-BTS, a new power connector<br />

designed to provide<br />

power from a wireless,<br />

mast-mounted<br />

base station to a<br />

remote radio head.<br />

This compact connector<br />

meets the strict<br />

requirements set<br />

forth by the next<br />

generation of base stations. This field-<strong>in</strong>stallable connector<br />

elim<strong>in</strong>ates the need to ship heavy pre-made cable<br />

assemblies around the world.<br />

The Amphe-BTS provides 360° EMI shield<strong>in</strong>g with<br />

ground<strong>in</strong>g f<strong>in</strong>gers and utilizes a bayonet lock<strong>in</strong>g mechanism<br />

with strong vibration and shock resistance. The connectors<br />

are lightn<strong>in</strong>g resistant due to their excellent conductivity.<br />

The receptacle has crimp contacts and the plug<br />

has screw term<strong>in</strong>ation contacts for easy field <strong>in</strong>stallation<br />

and replacement. This circular connector, based on MIL-<br />

C-26482 series 2, features a brass shell construction with<br />

t<strong>in</strong> over nickel plat<strong>in</strong>g, mak<strong>in</strong>g it corrosion resistant and<br />

compliant with ISO 21207. The Amphe-BTS has a cable<br />

seal<strong>in</strong>g range of 7 mm to 18 mm, a temperature range of<br />

–55° to +85°C and is available <strong>in</strong> standard two-way 48<br />

VDC, two-way reverse gender 48 VDC and three-way 400<br />

VDC/250 VAC power configuration. The IP65-rated<br />

Amphe-BTS connector is UL and TUV certified.<br />

Simulation of Cable Currents and EM Fields<br />

Computer Simulation Technology (CST–www.cst.com)<br />

announces the release of transient bidirectional co-simulation<br />

between cable currents and the electromagnetic<br />

fields <strong>in</strong> the surround<strong>in</strong>g space for CST STUDIO<br />

SUITE version 2011 SP5. The announcement was made<br />

at the 2011 IEEE EMC Symposium <strong>in</strong> Long Beach, CA.<br />

In many EMC applications, cabl<strong>in</strong>g has a major<br />

impact on the immunity and emissions performance of a<br />

system. Cables can receive electromagnetic fields and<br />

propagate the <strong>in</strong>duced voltages/currents through enclosures<br />

(shields) <strong>in</strong>to sensitive circuits caus<strong>in</strong>g <strong>in</strong>terference.<br />

Conversely, cables can conduct and radiate electromagnetic<br />

noise from a system result<strong>in</strong>g <strong>in</strong> EMC compliance<br />

issues.<br />

In reality, the coupl<strong>in</strong>g between fields and complex<br />

cable bundles is bi-directional; cables can both receive<br />

and re-radiate electromagnetic fields. Depend<strong>in</strong>g on the<br />

rout<strong>in</strong>g/position of cables with<strong>in</strong> an enclosure, the field<br />

distribution, modes and current paths can be strongly<br />

affected. In the past, modelers have often simplified the<br />

field/cable <strong>in</strong>teraction problem by assum<strong>in</strong>g one-way coupl<strong>in</strong>g,<br />

but this may produce <strong>in</strong>accurate results.<br />

CST has overcome this limitation by tightly <strong>in</strong>tegrat<strong>in</strong>g<br />

CST CABLE STUDIO (CST CS) with the powerful 3D<br />

transient solvers <strong>in</strong> CST MICROWAVE STUDIO ® (CST<br />

MWS). This enables true transient bi-directional<br />

field/cable coupl<strong>in</strong>g to be simulated for complex cable<br />

bundles routed through complex 3D environments such<br />

as electronics enclosures, aircraft, automobiles etc.<br />

Accurate analysis can be performed efficiently, despite<br />

the huge difference <strong>in</strong> scale between cable cross-section<br />

dimensions and overall system/vehicle dimensions.<br />

Cable Assemblies Feature Low Passive IMD<br />

San-tron, Inc. (www.santron.com) has announced a<br />

new series of PIM cable assemblies. Dubbed the Intermod<br />

Squad, they feature <strong>in</strong>termodulation performance as low<br />

44 High <strong>Frequency</strong> Electronics


When your name alone says it all<br />

Your application demands more than a commodity<br />

solution. TRU eng<strong>in</strong>eered designs deliver field-proven<br />

performance and reliability. Demand the best.<br />

Connect TRU with your 7-16 challenge.<br />

• Extensive range of cable assembly and<br />

connector products<br />

• Vertically <strong>in</strong>tegrated design, manufacture<br />

and test capabilities<br />

• Available with TRUlustre, tri-metal plat<strong>in</strong>g for<br />

sensitive <strong>in</strong>termodulation requirements<br />

To learn more about how TRU can connect with you,<br />

visit our new website: trucorporation.com<br />

Scan to learn more about<br />

TRU 7-16 solutions<br />

©2011 TRU Corporation<br />

TRU Corporation<br />

Peabody, MA 01960 USA<br />

1 800 262-9878<br />

(1 800 COAX-TRU)<br />

978 532-0775<br />

To request literature:<br />

market<strong>in</strong>g@trucorporation.com<br />

trucorporation.com


TECHNOLOGY REPORT<br />

as –181 dBc with an eSeries 7/16 connector term<strong>in</strong>ated on<br />

TFlex-402 cable. Typical performance across the l<strong>in</strong>eup of<br />

assemblies term<strong>in</strong>ated with eSMA and eSeries Type Ns is<br />

–162 dBc. The eSMA<br />

cable assemblies perform<br />

DC-20 GHz and<br />

the eSeries Type N<br />

cable assemblies perform<br />

DC-18 GHz.<br />

These assemblies are<br />

phase and attenuation<br />

stable, provide excellent shield<strong>in</strong>g, support UL/NEC<br />

Plenum class CMP, are corrosion resistant, and are low <strong>in</strong><br />

weight and highly flexible.<br />

The key component <strong>in</strong> San-tron PIM cable assemblies<br />

are the latest series of connectors recently <strong>in</strong>troduced by<br />

San-tron, the eSeries of connectors, which <strong>in</strong>cludes SMA<br />

(trademarked as eSMA), Type N, TNC, and 7/16 styles. To<br />

facilitate strong PIM performance these connector bodies<br />

are plated with white bronze Albaloy. The Albaloy plat<strong>in</strong>g<br />

provides a robust surface that easily accepts the braid solder<br />

jo<strong>in</strong>t and supports corrosion resistance per salt fog<br />

test<strong>in</strong>g. The eSMA center contacts are BeCu; they are<br />

plated .000030 gold over a copper strike provid<strong>in</strong>g great<br />

RF performance, corrosion resistance, and controls over<br />

porosity. The eSeries N and 7/16 center contacts are plated<br />

.000200 silver over a copper strike which conta<strong>in</strong>s cost<br />

versus gold, and also provides excellent RF performance<br />

and corrosion resistance.<br />

EMI-Filtered Circular Connectors<br />

API Technologies’<br />

Spectrum Control<br />

(www.SpecEMC<br />

.com) product l<strong>in</strong>e<br />

announces their new<br />

composite connector<br />

series. These composite<br />

connectors feature<br />

shells fabricated<br />

from high grade thermoplastic. Designed to replace traditional<br />

metal connector shells for substantial weight<br />

reduction, this addition to the Spectrum Control product<br />

l<strong>in</strong>e offers composite shell versions of its circular connectors<br />

<strong>in</strong> MIL-38999 series III and IV, available with EMI<br />

filter<strong>in</strong>g.<br />

The new composite shell ma<strong>in</strong>ta<strong>in</strong>s the form, fit and<br />

function of the orig<strong>in</strong>al connector shell, mak<strong>in</strong>g it ideal<br />

for applications where weight is a critical factor, such as<br />

<strong>in</strong> the military and aerospace <strong>in</strong>dustries. Given the company’s<br />

unique vertical <strong>in</strong>tegration capabilities, custom<br />

mechanical variations may be provided without traditional<br />

tool<strong>in</strong>g charges. With several types of filter<strong>in</strong>g<br />

available, these custom high reliability, circular connectors<br />

provide high quality and performance.<br />

SMP Connectors for UT Series Cables<br />

Cross RF (www.crossrf.com) offers SMP Connectors<br />

for UT series cables,<br />

both semi-rigid and<br />

semi-flexible types.<br />

The SMP <strong>in</strong>terface is<br />

a subm<strong>in</strong>iature<br />

<strong>in</strong>terface <strong>in</strong> the same<br />

scale as MMCX connectors.<br />

Four types of<br />

50-ohm SMP connectors<br />

have been <strong>in</strong>troduced,<br />

<strong>in</strong> either right<br />

angle or straight with term<strong>in</strong>ation capability to either<br />

0.047” or 0.086”, semi-rigid or conformable coax. They<br />

cover the frequency range of DC-12 GHz with a maximum<br />

0.1 dB <strong>in</strong>sertion loss and 1.25:! VSWR.<br />

Interface is per Mil-STD-348, with an anti-lock r<strong>in</strong>g<br />

body, beryllium copper contact, brass cap and Teflon ®<br />

<strong>in</strong>sulator. The connectors have gold plat<strong>in</strong>g over nickel<br />

underplate. Typical applications <strong>in</strong>clude PC board to<br />

board <strong>in</strong>terconnect, broadband communications, <strong>in</strong>strumentation,<br />

and telecom systems.<br />

Low Loss, Low PIM Coaxial Cable<br />

Times <strong>Microwave</strong> (www.timesmicrowave.com) LMR ® -<br />

SW is a low loss, low PIM, high performance 50 ohm coax<br />

cable with a seamless alum<strong>in</strong>ium outer conductor, provid<strong>in</strong>g<br />

better durability <strong>in</strong> bend<strong>in</strong>g than seam-welded cables,<br />

and better electrical performance than corrugated cables.<br />

LMR-SW cable is also lighter and provides significant<br />

cost sav<strong>in</strong>gs compared to corrugated cables. The field<br />

<strong>in</strong>stalled connectors have superior weather seal<strong>in</strong>g,<br />

VSWR and consistent PIM performance.<br />

LMR-SW cables support PIM-sensitive <strong>in</strong>stallations<br />

such as full duplex transmission l<strong>in</strong>es and co-located<br />

sites. They are suitable for short to medium height tower<br />

runs and flexible enough to be used as jumper cables <strong>in</strong><br />

cell-sites and other RF applications up to 6 GHz. The high<br />

quality type N and 7/16 DIN connectors are user-friendly<br />

and provide excellent and reliable performance when<br />

<strong>in</strong>stalled with the easy-to-use cable prep tools. PIM per-<br />

46 High <strong>Frequency</strong> Electronics


Flex Test TM<br />

Quick Lock<br />

PRECISION TEST<br />

Armored<br />

CABLESnow up<br />

40 GHz<br />

Low Loss<br />

to 40 GHz<br />

Rugged, reliable, ready to ship, custom lengths on request!<br />

40 GHz<br />

Phase Stable<br />

High-quality data requires high-quality cables — and<br />

different models to meet different needs. M<strong>in</strong>i-Circuits Precision<br />

Test Cables have been designed with our 40 years of <strong>in</strong>dustry<br />

experience <strong>in</strong> m<strong>in</strong>d, and tested beyond any others on the<br />

market. It’s why we can back them with an unprecedented<br />

6-month guarantee,* and customers can save time and<br />

money with fewer false rejects and less retest<strong>in</strong>g.<br />

Flex Test Our standard, triple-shielded CBL cables are so<br />

tough, we had to <strong>in</strong>vent a new way to test them:<br />

Flex Test. Even after more than 20,000 flex cycles,<br />

these cables deliver unimpaired performance from<br />

DC-18 GHz. Ideal for design labs or test benches,<br />

they’re available <strong>in</strong> lengths up to 25 feet with SMA or<br />

N-type connectors.<br />

Armored For harsh, abusive, outdoor environments, our APC<br />

cables can’t be beat. Even 1,000 crush cycles with a<br />

440-lb nitrogen tank had m<strong>in</strong>imal effect: attenuation<br />

<strong>in</strong>creased only 0.15 dB, while return loss <strong>in</strong>/out<br />

rema<strong>in</strong>ed 20 dB from DC-18 GHz. N-type<br />

connectors are standard, with lengths from 6<br />

to 15 feet <strong>in</strong> stock.<br />

Our new 40 GHz cables are proven through 20,000 flex<br />

cycles, and are fitted with high-performance connectors that<br />

mate with K ® - and SMA-equipped DUTs. Standard lengths<br />

range from 1.5 feet to 2 meters.<br />

Low Loss For design work requir<strong>in</strong>g long cable runs or whenever<br />

Ka-band signal strength is key, our KBL-LOW<br />

cables are ideal. Insertion loss is only 2.46 dB/m<br />

at 40 GHz, with a velocity ratio of 84%.<br />

Quick Lock For high-speed production efficiency and superior<br />

electrical & mechanical performance, our QBL cables are Phase Stable When phase stability is a concern, as <strong>in</strong> many<br />

the answer. Just push them onto a standard female<br />

high-frequency production tests, try our KBL-PHS<br />

cables. They offer a phase change 0.1°/GHz<br />

SMA connector and slide the collar forward to lock.<br />

when wrapped a full turn around a 3” diameter<br />

You’ll get proven high-<strong>in</strong>tegrity DC-18 GHz connections,<br />

mandrel, and a shield<strong>in</strong>g effectiveness of 110 dB!<br />

even after 20,000 flex and 20,000 mat<strong>in</strong>g cycles!<br />

RoHS compliant<br />

See m<strong>in</strong>icircuits.com for cable lengths, specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />

* M<strong>in</strong>i-Circuits will repair or replace your test cable at its option if the connector attachment fails with<strong>in</strong> six months of shipment.<br />

This guarantee excludes cable or connector <strong>in</strong>terface damage from misuse or abuse.<br />

K-Connector is a registered trademark of Anritsu Company.<br />

M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />

®<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

491 rev B


TECHNOLOGY REPORT<br />

formance better than –170 dBc can be achieved consistently.<br />

0.450" and 0.610" cable sizes are offered, along<br />

with ground<strong>in</strong>g kits, hangers and other <strong>in</strong>stallation accessories.<br />

Composite BNC 75 ohm HDTV Connectors<br />

Radiall (www. radiall.com)<br />

recently<br />

added a lightweight<br />

and easy-to-use composite<br />

BNC 75 ohm<br />

HDTV connector to its<br />

offer<strong>in</strong>g of affordable<br />

HDTV BNC series for<br />

studio quality broadcast<br />

production to<br />

video conferenc<strong>in</strong>g equipment applications.<br />

Radiall’s new technologically advanced true 75 ohm<br />

BNC HDTV connector features an easy-to-use two-piece<br />

design that makes it easy to crimp on the cable. This new<br />

connector can handle data rates up to 3 Gbps or higher<br />

while meet<strong>in</strong>g or exceed<strong>in</strong>g SMPTE 292M and 424M<br />

standards. The gold plated center and outer contacts provide<br />

excellent electrical performance with a frequency<br />

range of up to 6 GHz, and a low return loss of -32 dB at 3<br />

GHz. In addition, it is rated for a m<strong>in</strong>imum of 1000 mat<strong>in</strong>g<br />

cycles for guaranteed durability <strong>in</strong> the field.<br />

It comes <strong>in</strong> a wide variety of colors for signal cable<br />

identification and its special curved <strong>in</strong>terface composite<br />

material design with position<strong>in</strong>g marks makes it easy<br />

and fast to connect and disconnect from the rear <strong>in</strong> highdensity<br />

and recessed bulkhead applications. The connectors<br />

are also perfectly matched to high-performance HD<br />

cables.<br />

Cables Need No Braid Trim<br />

Times <strong>Microwave</strong> Systems (www.timesmicrowave.<br />

com) announces that No-Braid-Trim-X series of connectors<br />

for LMR ® cable<br />

has been expanded<br />

to encompass the<br />

most popular <strong>in</strong>terfaces<br />

for the most<br />

popular cables, LMR-<br />

400 and LMR-600<br />

The new No-Braid-<br />

Trim-X series of connectors<br />

offers the<br />

new feature of a term<strong>in</strong>ation process that no longer<br />

requires trimm<strong>in</strong>g of the braid shield thereby facilitat<strong>in</strong>g<br />

the cable term<strong>in</strong>ation procedure and reduc<strong>in</strong>g the time<br />

required to term<strong>in</strong>ate the cable.<br />

The new No-Braid-Trim-X l<strong>in</strong>e of connectors has all of<br />

these advanced features and benefits:<br />

· Cable can be stripped us<strong>in</strong>g a CST type LMR cable<br />

stripp<strong>in</strong>g tool.<br />

· No braid trimm<strong>in</strong>g required.<br />

· Comb<strong>in</strong>ation hex/knurl coupl<strong>in</strong>g nut allows tighten<strong>in</strong>g<br />

by hand or with a wrench.<br />

· Tri-metal plat<strong>in</strong>g <strong>in</strong>stead of silver elim<strong>in</strong>ates tarnish<strong>in</strong>g,<br />

while provid<strong>in</strong>g superior electrical performance.<br />

· Chamfered cable entry hole for ease of term<strong>in</strong>ation.<br />

· Ridged land<strong>in</strong>g area on the aft end for improved<br />

stra<strong>in</strong> relief and weather seal<strong>in</strong>g.<br />

· Improved impedance match<strong>in</strong>g to provide improved<br />

VSWR.<br />

Distributor Stock of 75-ohm HD-BNC Connectors<br />

The electronics distributor Newark/element14<br />

(www.newark.com, www.element14.com), a bus<strong>in</strong>ess of<br />

global Premier Farnell, announces that it is stock<strong>in</strong>g the<br />

HD-BNC, the newest l<strong>in</strong>e of RF connectors from<br />

Amphenol RF (www.amphenolrf.com). The HD-BNC<br />

enables design eng<strong>in</strong>eers<br />

to fit more connectors<br />

<strong>in</strong>to a smaller<br />

space without<br />

compromis<strong>in</strong>g true<br />

75 ohm performance.<br />

The HD-BNC<br />

series can be configured<br />

with a centerl<strong>in</strong>e<br />

spac<strong>in</strong>g of 8 mm m<strong>in</strong>imum, <strong>in</strong> comparison to the<br />

standard BNC at 15.5. This enables 400% density<br />

improvements and a 250% improvement over the standard<br />

1.0/2.3 DIN. The HD-BNC delivers performance<br />

needed for next-generation broadcast systems. The series<br />

not only meets the specifications of a BNC, it meets or<br />

exceeds all SMPTE requirements.<br />

<strong>Microwave</strong> Connector Torque Wrenches<br />

Coaxial Components Corp. (Coaxicom–www.coaxicom.com)<br />

now offers a l<strong>in</strong>e of torque wrenches for precision<br />

microwave connectors.<br />

The tools are<br />

available for the follow<strong>in</strong>g<br />

connector<br />

types: SMA/3.5 mm/<br />

2.92 mm/2.4 mm,<br />

Type N, SC/N, TNC,<br />

SMC, SSMC, SSMA,<br />

SMA hermetic, 7/16.<br />

Where applicable, wrench models available for either normal<br />

coupl<strong>in</strong>g torque or proof coupl<strong>in</strong>g torque.<br />

Next month’s Technology Report will be an update on<br />

power amplifiers.<br />

48 High <strong>Frequency</strong> Electronics


Tactical Advantage.<br />

When Reliability Counts.<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

www.rogerscorp.com/military<br />

Read Our New<br />

ROG Blog<br />

www.rogerscorp.com/acm<br />

RT/duroid ®<br />

6202PR<br />

RT/duroid ®<br />

5880LZ<br />

RT/duroid ®<br />

6035HTC<br />

Features<br />

<br />

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<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

<br />

Benefits


ZVA-213X<br />

SUPER ULTRA WIDEBAND<br />

AMPLIFIERS<br />

+24 dBm output... 0.7 to 21 GHz<br />

Call<strong>in</strong>g these amplifiers “wideband” doesn’t beg<strong>in</strong> to describe them.<br />

Consider that both the ZVA-183X and ZVA-213X amplifiers are<br />

unconditionally stable and deliver typical +24 dBm output power at 1dB<br />

compression, 26 dB ga<strong>in</strong> with +/- 1 dB flatness, noise figure of 3 dB<br />

and IP3 +33 dBm. What’s more, they are so rugged they can even<br />

withstand full reflective output power when the output load is open or<br />

short. In addition to broadband military and commercial applications,<br />

these super wideband amplifiers are ideal as workhorses for a<br />

wide number of narrow band applications <strong>in</strong> your lab or <strong>in</strong> a<br />

production environment.<br />

Visit our website for comprehensive performance data and<br />

specifications for our ZVAs or any of our over 10,000 catalog items.<br />

You can even order on-l<strong>in</strong>e for next day shipment.<br />

M<strong>in</strong>i-Circuits…we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />

from<br />

$<br />

845 ea.<br />

TYPICAL SPECIFICATIONS<br />

MODEL FREQ. GAIN POUT NOISE FIG. PRICE<br />

(GHz) (dB) ( dBm) (dB) (1-9)<br />

@ 1 dB Comp.<br />

ZVA-183X+ 0.7-18 26 +24 3.0 845.00<br />

ZVA-213X+ 0.8-21 26 +24 3.0 945.00<br />

Note: Alternative heat-s<strong>in</strong>k must be provided to limit maximum base plate temperature.<br />

ZVA-183+ 0.7-18 26 +24 3.0 895.00<br />

ZVA-213+ 0.8-21 26 +24 3.0 995.00<br />

All models IN STOCK!<br />

RoHS compliant<br />

®<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

440 rev H


UP TO 100 Watt<br />

AMPLIFIERS<br />

100 kHz to18 GHz<br />

NOW!<br />

ZHL-5W-1<br />

ZHL-5W-2G+<br />

ZHL-20W-13+<br />

LZY-1+<br />

LZY-2+<br />

LZY-22+<br />

ZHL-10W-2G<br />

ZHL-16W-43+<br />

ZHL-30W-252+<br />

ZHL-30W-262+<br />

ZHL-50W-52<br />

ZHL-100W-52<br />

ZHL-100W-GAN+<br />

$<br />

from945ea. qty. (1-9)<br />

It’s Watts you want? From 3 up to 100 Watts,<br />

M<strong>in</strong>i-Circuits has high-power amplifiers built for rugged,<br />

reliable performance <strong>in</strong> heavy-duty, 100 kHz-18 GHz<br />

applications. Each model is available with or without a<br />

heat s<strong>in</strong>k/fan, operat<strong>in</strong>g on a s<strong>in</strong>gle <strong>in</strong>tegrated DC<br />

supply, with surpris<strong>in</strong>gly efficient current consumption.<br />

Extensive safety features prevent amplifier damage from<br />

over-temperature, over-voltage, or open or short loads.<br />

And <strong>in</strong>ternal power regulation delivers high performance<br />

even when your DC power supply is fluctuat<strong>in</strong>g. Our<br />

manufactur<strong>in</strong>g controls ensure that quality and reliability<br />

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Freq. Ga<strong>in</strong> Pout (dBm) Dynamic Range DC Pwr. Price Price<br />

(MHz) (dB) @Comp NF IP3 Volt Current $ ea. X<br />

Model 1dB 3 dB (dB) (dBm) (V) (A) Qty. 1-9 suffix<br />

With Heat S<strong>in</strong>k/Fan fL-fU Typ. Typ. Typ. Typ. Typ. Nom. Max<br />

NEW<br />

LZY-22+ 0.1-200 43 +42.0 +45.0 8.9 +52 24 6.0 1495 1470<br />

LZY-1+ 20-512 43 +45.7 +47.0 8.6 +54 26 7.3 1995 1895<br />

LZY-2+ 500-1000 46 +45.0 +45.8 8.0 +54 28 8.0 1995 1895<br />

ZHL-5W-1 5-500 44 +39.5 +40.5 4.0 +49 25 3.3 995 970<br />

ZHL-5W-2G+ 800-2000 45 +37.0 +38.0 8.0 +44 24 2.0 995 945<br />

ZHL-10W-2G 800-2000 43 +40.0 +41.0 7.0 +50 24 5.0 1295 1220<br />

ZHL-16W-43+ 1800-4000 45 +41.0 +42.0 6.0 +47 28 4.3 1595 1545<br />

ZHL-20W-13+ 20-1000 50 +41.0 +43.0 3.5 +50 24 2.8 1395 1320<br />

ZHL-30W-252+ 700-2500 50 +44.0 +46.0 5.5 +52 28 6.3 2995 2920<br />

ZHL-30W-262+ 2300-2550 50 +43.0 +45.0 7.0 +50 28 4.3 1995 1920<br />

ZHL-50W-52 50-500 50 +46.0 +48.0 6.0 +55 24 9.3 1395 1320<br />

ZHL-100W-52 50-500 50 +47.0 +48.5 6.5 +57 24 10.5 1995 1920<br />

ZHL-100W-GAN+ 20-500 42 +49.0 +50.0 7.0 +60 30 9.5 2395 2320<br />

ZVE-3W-183+ 5900-18000 35 +34.0 +35.0 5.5 +44 15 2.2 1295 1220<br />

ZVE-3W-83+ 2000-8000 36 +33.0 +35.0 5.8 +42 15 1.5 1295 1220<br />

Protected under U.S. Patent 7,348,854<br />

For models without heat s<strong>in</strong>k, add X suffix to model No.( Example: LZY-1+, LZY-1X+)<br />

ZHL-16W-43X+<br />

ZHL-30W-252X+<br />

ZHL-30W-262X+<br />

ZHL-5W-1X<br />

ZHL-5W-2GX+<br />

®<br />

LZY-1X+<br />

ZHL-20W-13X+<br />

LZY-2X+<br />

LZY-22X+<br />

ZHL-10W-2GX<br />

ZHL-50W-52X<br />

ZHL-100W-52X<br />

ZHL-100W-GANX+<br />

ZVE-3W-83X+<br />

ZVE-3W-183X+<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

416 rev Y


High <strong>Frequency</strong> Design<br />

WAFER PROBE TESTING<br />

Probe Test<strong>in</strong>g of Wafer Level<br />

Chip Scale Packag<strong>in</strong>g<br />

By John Whittaker<br />

Teradyne<br />

Wafer Level Chip<br />

Elim<strong>in</strong>at<strong>in</strong>g the”probe<br />

Scale Packag<strong>in</strong>g<br />

tower” <strong>in</strong> automated wafer<br />

(WLCSP) has<br />

probe systems reduces the enabled smaller and th<strong>in</strong>ner<br />

semiconductor devices<br />

size and complexity of the<br />

test system, improves test with greater functionality<br />

accuracy, but requires to be used <strong>in</strong> consumer<br />

more precise mechanical mobile applications such<br />

<strong>in</strong>terface tolerances as smart phones, tablets<br />

and hand held GPS track<strong>in</strong>g<br />

devices. There is an accelerat<strong>in</strong>g trend<br />

toward wafer level chip scale packag<strong>in</strong>g, with<br />

estimates plac<strong>in</strong>g growth at 26% CAGR for<br />

2011 (Yole Market<strong>in</strong>g, 2011). WLCSP has lead<br />

the way to reduced cost of complex semiconductor<br />

devices through simplified packag<strong>in</strong>g and a<br />

reduction <strong>in</strong> the number of touches <strong>in</strong> the semiconductor<br />

test process. Paradoxically, simplified<br />

WLCSP packag<strong>in</strong>g demands have <strong>in</strong>creased<br />

the demands on the test cell, <strong>in</strong>clud<strong>in</strong>g the test<br />

system, wafer prober and the <strong>in</strong>terface to the<br />

device under test.<br />

One of the more significant impacts is the<br />

signal performance requirements that were<br />

required at f<strong>in</strong>al package test are now shifted<br />

to the wafer probe environment, where pad-topad<br />

and ball-to-ball dimensions and tolerances<br />

are much smaller than those at f<strong>in</strong>al<br />

test and cont<strong>in</strong>ue to shr<strong>in</strong>k. This is most clearly<br />

seen <strong>in</strong> the device contact<strong>in</strong>g requirements.<br />

At f<strong>in</strong>al test of a packaged device, alignment of<br />

the device under test (DUT) to its test socket<br />

and contacts is <strong>in</strong>dependent of the number of<br />

parallel test sites (multi-site test), and each<br />

Figure 1 · Comparison of test procedures with, and without, a probe tower.<br />

52 High <strong>Frequency</strong> Electronics


High <strong>Frequency</strong> Design<br />

WAFER PROBE TESTING<br />

test site has alignment features <strong>in</strong><br />

the socket that positions the packaged<br />

device with respect to the contacts.<br />

With wafer chip scale pack<strong>in</strong>g<br />

parallel test sites are no longer physically<br />

decoupled because they are all<br />

on the common wafer. Planarity and<br />

alignment errors become cumulative.<br />

Multi-site test is essential to<br />

obta<strong>in</strong><strong>in</strong>g optimal test economics.<br />

While multi-site probe has long been<br />

a solution for test<strong>in</strong>g pure digital and<br />

memory devices, complex analog and<br />

mixed-signal SOC devices add complexity<br />

to test floor management<br />

because these devices tend to be of<br />

lower volume and a greater variety.<br />

This leads to a higher frequency of<br />

reconfigur<strong>in</strong>g the test cell to accommodate<br />

the chang<strong>in</strong>g mix of device<br />

types. In order to obta<strong>in</strong> the efficiencies<br />

of multi-site test <strong>in</strong> the face of<br />

these challenges it is important to<br />

focus on these essential requirements<br />

of the test cell:<br />

1. Provide for m<strong>in</strong>imal signal path<br />

from <strong>in</strong>strument to DUT.<br />

2. Provide highly accurate and<br />

repeatable planarity alignment<br />

to support the requirements of<br />

membrane and f<strong>in</strong>e-pitch, highperformance<br />

probe technology.<br />

3. Provide for rapid changeover<br />

and setup of probe cards to m<strong>in</strong>imize<br />

down time <strong>in</strong> high mix,<br />

low volume production environments.<br />

It has been demonstrated that<br />

test cells can meet each of these<br />

requirements result<strong>in</strong>g <strong>in</strong><br />

changeover of probe cards, performed<br />

by an operator <strong>in</strong> a production environment,<br />

meet<strong>in</strong>g the required planarity,<br />

all <strong>in</strong> a matter of m<strong>in</strong>utes.<br />

Let’s consider each of these requirements.<br />

Figure 2 · Close-up photo of contacts<br />

on a test probe from<br />

Microprobe Inc.<br />

Figure 3 · Dies are accessed along<br />

a diagonal pattern.<br />

Signal Path<br />

In the past, wafer probe test <strong>in</strong>terfaces<br />

have been based on the use of a<br />

probe tower to provide flexible solutions<br />

to meet low-to-medium performance<br />

requirements. These solutions<br />

consist of a probe <strong>in</strong>terface board<br />

(PIB) that resides on the tester signal<br />

<strong>in</strong>terface and a probe tower that<br />

extends test signals from the PIB<br />

<strong>in</strong>to the prober to a probe card, which<br />

provides the needles to make contact<br />

with the wafer. These are lower cost<br />

solutions where only the probe card<br />

needs to be changed over to accommodate<br />

a different device. It also<br />

requires only reasonable mechanical<br />

accuracy for position<strong>in</strong>g the tester<br />

<strong>in</strong>terface to the plane of the wafer.<br />

The layer of mechanical decoupl<strong>in</strong>g<br />

provided by the probe tower comes at<br />

the price of extend<strong>in</strong>g signal path<br />

length between the tester <strong>in</strong>strumentation<br />

to the probe needles and<br />

add<strong>in</strong>g <strong>in</strong>terconnects, both of which<br />

can degrade electrical signal performance<br />

due to impedance discont<strong>in</strong>uities.<br />

Even though there is signal<br />

degradation, many analog signals<br />

can be addressed with calibration or<br />

error de-embedd<strong>in</strong>g techniques as is<br />

done with RF (radio frequency) signals.<br />

In comparison, digital signals<br />

can be sensitive to overall round-trip<br />

delay and are impacted by reflections<br />

at multiple <strong>in</strong>terconnect boundaries.<br />

Reflections at high data rates lead to<br />

<strong>in</strong>ter-symbol <strong>in</strong>terference and data<br />

dependent jitter of signal edges.<br />

These effects are much more difficult<br />

or impossible to remove and can only<br />

be controlled by reduc<strong>in</strong>g the overall<br />

path length and elim<strong>in</strong>at<strong>in</strong>g <strong>in</strong>terconnects.<br />

As high performance functional<br />

test moves to the probe environment<br />

and digital speeds cont<strong>in</strong>ue<br />

to <strong>in</strong>crease, the path effects become<br />

an unavoidable obstacle and a key<br />

limiter to signal performance.<br />

Towerless solutions m<strong>in</strong>imize these<br />

effects and come closest to the orig<strong>in</strong>al<br />

design <strong>in</strong>tent of the tester’s signal<br />

delivery system.<br />

Figure 4 · Summary of planarity requirements for three types of probes.<br />

54 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

WAFER PROBE TESTING<br />

Figure 5 · Photo of the wafer probe system hardware.<br />

Figure 6 · This diagram illustrates the reduction <strong>in</strong> complexity<br />

of the new prober system.<br />

Planarity<br />

High performance function test<br />

wafer probe requires a solution that<br />

overcomes issues of <strong>in</strong>terconnects<br />

and extended signal path lengths. For<br />

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proven to provide the best environment<br />

for controll<strong>in</strong>g impedance to<br />

with<strong>in</strong> 10s of µm of the die pad or solder<br />

ball. Other technologies such as<br />

pogo p<strong>in</strong>s, cobra probes or buckl<strong>in</strong>g<br />

column probes also can ma<strong>in</strong>ta<strong>in</strong><br />

very short lengths to m<strong>in</strong>imize <strong>in</strong>ductance<br />

and achieve best performance.<br />

In all cases the z-axis compliance of<br />

these short probes is limited, requir<strong>in</strong>g<br />

the probe <strong>in</strong>terface solution to<br />

have very high z-axis accuracy to stay<br />

with<strong>in</strong> the probes compliance range.<br />

Additionally, with <strong>in</strong>creas<strong>in</strong>g<br />

multi-site counts, access of the probes<br />

to the dies on the wafer dictates feasible<br />

probe patterns. It is optimal to<br />

arrange the probes such that dies are<br />

accessed along a diagonal pattern<br />

(see Fig. 1). While this maximizes the<br />

probe connection access, it spreads<br />

the test sites over a distance that is<br />

<strong>in</strong>creased by the √2 or 40% than if the<br />

sites were arranged <strong>in</strong> a direct row.<br />

However, a direct row arrangement<br />

severely limits probe access to the<br />

die. The z-axis planarity between the<br />

wafer (probe chuck) and the probe<br />

card must m<strong>in</strong>imize angular z-errors<br />

to accommodate the z-axis compliance<br />

of the probes themselves. The<br />

probe card alignment system must<br />

provide accurate, repeatable alignment<br />

as probe cards are rout<strong>in</strong>ely<br />

swapped out. The alignment system<br />

must assure rapid, consistent<br />

changeover <strong>in</strong> the production environment.<br />

It is also essential for the probe<br />

card and support<strong>in</strong>g mechanical<br />

structure to absorb the forces <strong>in</strong>troduced<br />

by the <strong>in</strong>creas<strong>in</strong>g probe count.<br />

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High <strong>Frequency</strong> Design<br />

WAFER PROBE TESTING<br />

If it is <strong>in</strong>sufficient, deflection will<br />

occur when probes are compressed<br />

when mak<strong>in</strong>g contact with the wafer.<br />

It is important that the support<br />

structure is both rigid and accurate<br />

so that proper contact force is made<br />

between the probes and the wafer.<br />

This force needs to be great enough to<br />

obta<strong>in</strong> the proper scrubb<strong>in</strong>g action to<br />

break through oxides on the contact<br />

surface. It is also important that<br />

excess contact force is not required to<br />

overcome planarity errors as the<br />

excess force may damage structures<br />

on the die beneath the pads or can<br />

excessively deform solder balls.<br />

By m<strong>in</strong>imiz<strong>in</strong>g the tolerance loop<br />

from tester to wafer, z-errors can be<br />

ma<strong>in</strong>ta<strong>in</strong>ed to 0.029 degrees, which is<br />

a factor of 2 better than what is<br />

required by multisite membrane<br />

probe solutions spann<strong>in</strong>g up to 8 die<br />

of 8 × 8 mm, and even better for pogo<br />

based solutions.<br />

Figure 7 · Diagram compar<strong>in</strong>g the old and new probe systems.<br />

Rapid Changeover<br />

In rout<strong>in</strong>e production, downtime<br />

is expensive, and unpredictable<br />

downtime is disruptive. Rout<strong>in</strong>e<br />

changeover of probe cards for a different<br />

device or for ma<strong>in</strong>tenance or<br />

repair must be quick to m<strong>in</strong>imize<br />

downtime. Thus, m<strong>in</strong>imiz<strong>in</strong>g the tolerance<br />

loop from probe tips to accuracy<br />

alignment features is essential to<br />

provide repeatable changeovers.<br />

To address this, the process of<br />

chang<strong>in</strong>g the probe card should allow<br />

the test system <strong>in</strong>terface to rema<strong>in</strong><br />

connected and aligned to the prober.<br />

A bottom-load<strong>in</strong>g scheme is used to<br />

manipulate the probe card <strong>in</strong>to place<br />

and align us<strong>in</strong>g unique alignment<br />

features <strong>in</strong> the design.<br />

A modified bottom load probe card<br />

changer can achieve this. The production<br />

floor operator can remove and<br />

replace probe cards <strong>in</strong> the changer’s<br />

load<strong>in</strong>g tray. From there the load<strong>in</strong>g<br />

operation is completely automated.<br />

The time required to place the probe<br />

card <strong>in</strong> the loader and have it planarized<br />

and locked <strong>in</strong> place is less<br />

than 5 m<strong>in</strong>utes.<br />

Summary<br />

In summary, the cost and performance<br />

requirements of semiconductor<br />

devices used <strong>in</strong> consumer mobile electronics<br />

and other applications demand<br />

greater functional density and lower<br />

cost devices. These requirements are<br />

addressed with wafer level chip scale<br />

packag<strong>in</strong>g. This <strong>in</strong> turn drives the need<br />

for full functional test at probe s<strong>in</strong>ce<br />

traditional package and f<strong>in</strong>al test is<br />

elim<strong>in</strong>ated from the manufactur<strong>in</strong>g<br />

process. The physical constra<strong>in</strong>ts <strong>in</strong>troduced<br />

by multi-site wafer level chip<br />

scale test<strong>in</strong>g has presented challenges<br />

to traditional techniques used for<br />

<strong>in</strong>terfac<strong>in</strong>g the test system to the<br />

wafer prober. Innovative solutions that<br />

focus on reduc<strong>in</strong>g error sources and<br />

simplify tolerance loops can reliably<br />

and economically meet today’s challenges<br />

at the performance levels<br />

required to test today’s and tomorrow’s<br />

complex semiconductor devices.<br />

Author Information<br />

John Whittaker, Interface Products<br />

Market<strong>in</strong>g Manager, Global Services<br />

Organization at Teradyne. The 20-year<br />

veteran of the ATE <strong>in</strong>dustry has a<br />

background <strong>in</strong> memory and digital<br />

test, statistical analysis software, and<br />

is currently focused on SOC signal<br />

delivery. Mr. Whittaker graduated<br />

from Worcester Polytechnic Institute<br />

with a B.S.E.E. Teradyne, Inc., 600<br />

Riverpark Drive, North Read<strong>in</strong>g, MA,<br />

01864, email: john.whittaker@teradyne.com.<br />

Other contributors to the article<br />

<strong>in</strong>clude Roger Burns, previously<br />

Market<strong>in</strong>g Applications Manager,<br />

Teradyne; Dan Watson, Mechanical<br />

Eng<strong>in</strong>eer, Global Services Organization,<br />

Teradyne. He has created <strong>in</strong>novative<br />

mechanical, electrical, and signal<br />

delivery <strong>in</strong>terface solutions for many<br />

of Teradyne’s semiconductor test<strong>in</strong>g<br />

products; Kirk Pitta, Applications<br />

Eng<strong>in</strong>eer, Global Services Organization,<br />

Test Cell Group at Teradyne.<br />

He has worked <strong>in</strong> design eng<strong>in</strong>eer<strong>in</strong>g,<br />

Japan field applications and factory<br />

applications roles for the Test Cell<br />

Group. Mr. Pitta holds a B.S. <strong>in</strong><br />

Mechanical Eng<strong>in</strong>eer<strong>in</strong>g and a M.S. <strong>in</strong><br />

Mechanical Eng<strong>in</strong>eer<strong>in</strong>g from<br />

Northeastern University.<br />

58 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

CONNECTORS ON PCBs<br />

RF/<strong>Microwave</strong> Connectors<br />

on Pr<strong>in</strong>ted Circuit Boards<br />

By Gary Breed<br />

Editorial Director<br />

When mount<strong>in</strong>g<br />

This month’s tutorial takes a<br />

an RF/microwave<br />

or high<br />

look at the practical matter<br />

of characteriz<strong>in</strong>g, then speed digital connector to<br />

<strong>in</strong>stall<strong>in</strong>g, an RF connector a pr<strong>in</strong>ted circuit board,<br />

on a pr<strong>in</strong>ted circuit board the transition from the<br />

connector body and <strong>in</strong>ner<br />

conductor p<strong>in</strong> to the pr<strong>in</strong>ted traces is often the<br />

source of excessive mismatch. The discont<strong>in</strong>uity<br />

<strong>in</strong> size, shape and surround<strong>in</strong>g conductors<br />

results <strong>in</strong> an area with a characteristic<br />

impedance that can be much different (usually<br />

lower) that the system impedance of 50<br />

ohms (RF/microwave) or 75 ohms (data or<br />

video).<br />

An additional challenge is the transition<br />

from the round coaxial structure of cables and<br />

their connectors, to the planar stripl<strong>in</strong>e or<br />

microstrip structure of signal paths on a p.c.<br />

board. The connector shown <strong>in</strong> Figure 1<br />

demonstrates one approach to solv<strong>in</strong>g the<br />

problem. The connector body is designed to<br />

m<strong>in</strong>imize the VSWR “bump” caused by the<br />

change from coaxial to planar transmission<br />

l<strong>in</strong>es, but the p<strong>in</strong> that is soldered to the board<br />

has as added vertical thickness, and almost<br />

always will require a solder pad that is wider<br />

than a stripl<strong>in</strong>e with the desired characteristic<br />

impedance.<br />

Reference [1] offers a good description of<br />

the problem and typical solutions. Although<br />

the author covers the issue from the perspective<br />

of 75 ohm BNC connectors, the <strong>in</strong>formation<br />

applies to 50 ohm systems and other connectors,<br />

as well. As shown <strong>in</strong> Figures 2 and 3<br />

on the next page, one solution is to modify the<br />

ground metal layer under, and adjacent to, the<br />

connector. Wider spac<strong>in</strong>g between the signal<br />

conductor and the ground/shield conductors<br />

Figure 1 · Connectors must provide a transition<br />

from a round coaxial transmission l<strong>in</strong>e<br />

to the planar microstrip or stripl<strong>in</strong>e structure<br />

of a p.c. board.<br />

<strong>in</strong>creases the characteristic impedance <strong>in</strong> the<br />

area where the required solder pad is much<br />

wider than a normal 75-ohm microstrip l<strong>in</strong>e.<br />

Figure 2 illustrates the problem by show<strong>in</strong>g<br />

the relative widths of the solder pad and<br />

microstrip l<strong>in</strong>es on the top metal layer. Figure<br />

3 shows how the top metal and the metal of<br />

the next lower layer are modified to create a<br />

region with higher characteristic impedance.<br />

An alternate solution is to mechanically<br />

mach<strong>in</strong>e the p.c board to create an air space<br />

adjacent to the solder pad. This lowers the<br />

effective dielectric constant of this part of the<br />

board, which will <strong>in</strong>crease the characteristic<br />

impedance without chang<strong>in</strong>g the pad and<br />

trace widths.<br />

Top-mounted connectors present a different<br />

set of structural variations that affect the<br />

impedance match between the connector and<br />

the p.c. board traces. This type of mount<strong>in</strong>g<br />

offers greater mechanical strength than edgemount<strong>in</strong>g,<br />

and is the only option for <strong>in</strong>stall<strong>in</strong>g<br />

connectors <strong>in</strong> locations other than at the edge<br />

of a board.<br />

60 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Design<br />

CONNECTORS ON PCBs<br />

Figure 2 · Cross-section of a p.c. board “land<strong>in</strong>g pad”<br />

area for an edge-mounted BNC connector, with no<br />

compensation for impedance mispatch (adapted from<br />

Ref. [1].<br />

Figure 3 · Cross-section of a p.c. board “land<strong>in</strong>g pad”<br />

area for an edge-mounted BNC connector, with the<br />

ground metallization modified to provide an improved<br />

match to a 75 ohm (adapted from Ref. [1].<br />

Surface-mount connectors will<br />

perform similarly to edge-mounted<br />

connectors, with round-to-planar<br />

transitions and impedance variations<br />

due to solder pad size. However,<br />

through-hole mounted connectors<br />

must have vias to provide both signal<br />

and ground connections. As shown <strong>in</strong><br />

Figure 4, the length of the via has an<br />

<strong>in</strong>ductance, and the gap between the<br />

via and <strong>in</strong>terven<strong>in</strong>g metal layers has<br />

a capacitance. The average values<br />

will determ<strong>in</strong>e the characteristic<br />

impedance of the via “tube,” but the<br />

layered structure means that the<br />

impedance will vary along the length<br />

of the via.<br />

If the space between the layers is<br />

small relative to the wavelength of<br />

the highest frequency desired signals,<br />

the variation will have little<br />

effect on performance. But as fre-<br />

Top View<br />

Capacitance<br />

between via<br />

wall and each<br />

layer’s metal<br />

Cross-section View<br />

Figure 4 · Thru-hole, top-mounted connectors have an impedance that is<br />

affected by vias, mid layers and metal layers of the p.c. board.<br />

C<br />

C<br />

C<br />

C<br />

L<br />

C<br />

C<br />

C<br />

C<br />

Inductance<br />

due to length<br />

and diameter<br />

of tubular via<br />

quency <strong>in</strong>creases, the effects will<br />

become <strong>in</strong>creas<strong>in</strong>gly apparent as<br />

<strong>in</strong>creased VSWR and its attendant<br />

loss, and time-doma<strong>in</strong> reflections<br />

that can affect the modulated waveform<br />

of RF signals, or the waveform<br />

shape (and eye closure) of high speed<br />

digital signals.<br />

At 2.45 GHz, with typical FR-4<br />

material dielectric constant of<br />

approximately 4.4, the thickness of a<br />

p.c. board is <strong>in</strong> the range of 1/17<br />

wavelength. At this frequency, problems<br />

would not be significant.<br />

However, a common rule of thumb is<br />

that wavelength-related problems<br />

will arise when dimensions are <strong>in</strong> the<br />

range of λ/10. As the operat<strong>in</strong>g frequency<br />

rises above 2.45 GHz, designers<br />

should be prepared to implement<br />

compensat<strong>in</strong>g techniques to avoid<br />

performance issues with throughhole<br />

connectors.<br />

Of course, the magnitude of the<br />

problems will vary with the connector<br />

type and mount<strong>in</strong>g method as<br />

well. Well designed and precision<br />

manufactured surface-mount connectors<br />

are available with performance<br />

specified <strong>in</strong>to the tens of GHz.<br />

Summary<br />

At high frequencies and fast edge<br />

rates, the <strong>in</strong>terface between an<br />

RF/microwave or high speed digital<br />

connector and the pr<strong>in</strong>ted circuit<br />

board can be the most critical location<br />

<strong>in</strong> the signal path. Designers<br />

must be aware of the potential problems<br />

that can arise, and be prepared<br />

to use appropriate techniques to prevent<br />

their occurrence.<br />

References<br />

1. T-K Ch<strong>in</strong>, National Semiconductor<br />

Corp., “Optimiz<strong>in</strong>g BNC PCB<br />

Footpr<strong>in</strong>t Designs for Digital Video<br />

Equipment,” available at: www.<br />

samtec.com/technicallibrary/<br />

white_papers.aspx<br />

2. “PCB Design Guide,” Trompeter<br />

Electronics, (available from several<br />

sources—do an Internet search by<br />

title + Trompeter)<br />

3. S. McMorrow, J. Bell, J. Ferry, “A<br />

Solution for the Design, Simulation<br />

and Validation of Board-to-Board<br />

Interconnects,” High <strong>Frequency</strong> Electronics,<br />

Jan. 2005.<br />

62 High <strong>Frequency</strong> Electronics


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High <strong>Frequency</strong> Products<br />

NEW LITERATURE<br />

Full-L<strong>in</strong>e Product Catalog<br />

AR RF/<strong>Microwave</strong> Instrumentation<br />

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systems, complete EMC test<strong>in</strong>g<br />

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plus the company's new full l<strong>in</strong>e<br />

catalog. The hard copy catalog features<br />

AR RF/<strong>Microwave</strong> Instrumentation<br />

products along with sections<br />

cover<strong>in</strong>g AR Modular RF, AR<br />

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To receive a free copy of either the<br />

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AR RF/<strong>Microwave</strong> Instrumentation<br />

www.arworld.us/html/02000.asp<br />

Envelope Track<strong>in</strong>g Interface<br />

Specification Document<br />

The OpenET Alliance, the not-forprofit<br />

organization that promotes<br />

energy efficient wireless transmission<br />

through Envelope Track<strong>in</strong>g,<br />

today announced that it has<br />

released a new API specification<br />

for 4G handsets to support further<br />

<strong>in</strong>dustry collaboration. Envelope<br />

Track<strong>in</strong>g is the most effective<br />

wide-band power optimization<br />

technology for the RF front end of<br />

3G and 4G handsets. The release<br />

64 High <strong>Frequency</strong> Electronics<br />

of this API will simplify collaboration<br />

among semiconductor vendors,<br />

OEMs and EDA providers<br />

through the complete development<br />

lifecycle of Envelope Track<strong>in</strong>g solutions<br />

for 3G and 4G handsets, from<br />

early design and prototyp<strong>in</strong>g<br />

through to mass production. The<br />

API document builds on the widely<br />

adopted OpenET hardware <strong>in</strong>terface<br />

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def<strong>in</strong>es an implementation-<strong>in</strong>dependent<br />

software <strong>in</strong>terface<br />

between the high level calibration,<br />

configuration and control functionality<br />

required for Envelope<br />

Track<strong>in</strong>g and the low level<br />

transceiver and modulator hardware<br />

blocks. The new API is freely<br />

available to all members of the<br />

OpenET Alliance. Membership is<br />

available on the OpenET website.<br />

OpenET Alliance<br />

www.open-et.org<br />

Application Note on<br />

Validation of LTE Devices<br />

Agilent’s Power of X application<br />

notes provide <strong>in</strong>sight <strong>in</strong>to solv<strong>in</strong>g<br />

tough measurement problems <strong>in</strong> a<br />

unique way for both the design and<br />

manufactur<strong>in</strong>g environments. The<br />

new 5990-8898EN, “Solutions for<br />

Validation of LTE Devices–Test<strong>in</strong>g<br />

MIMO Over-the-Air Us<strong>in</strong>g the<br />

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Agilent’s X Series products help<br />

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Agilent Technologies<br />

www.agilent.com/f<strong>in</strong>d/powerofx<br />

CD Collection of Measurement<br />

Web<strong>in</strong>ars<br />

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the follow<strong>in</strong>g web<strong>in</strong>ars on<br />

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Resistivity Measurements of Bulk<br />

Materials: Conductors, Insulators,<br />

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The CD is available onl<strong>in</strong>e at the<br />

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Ultra Low Noise Amplifiers (LNAs)<br />

Select LNAs Available from Stock for Prototype or High-Volume Production<br />

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<br />

Part Number<br />

New Products<br />

Application<br />

<strong>Frequency</strong><br />

Range<br />

(MHz)<br />

Test<br />

<strong>Frequency</strong><br />

(MHz)<br />

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I DD<br />

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Package<br />

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SKY67100-396LF<br />

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DFN 8L<br />

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Cellular<br />

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SKY67002-396LF<br />

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1600–2100 1950 17.5 0.65 39.5 20 5<br />

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95<br />

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DFN 8L<br />

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SKY67105-306LF<br />

Cellular<br />

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600–1100 850 37 0.7 41 26 5<br />

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140<br />

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1500–3000 1950 35 0.65 37 24 5<br />

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SKY67014-396LF General Purpose 1500–3000 2450 13 0.95 26 15 3.3<br />

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15<br />

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DFN 8L<br />

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SKY65047-360LF<br />

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ISM Band<br />

400–3000 1575 16.6 0.8 19.5 0 3.3<br />

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7<br />

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DFN 8L<br />

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SKY65050-372LF<br />

Broadband Low<br />

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450–6000 2400 15.5 0.65 23.5 10.5 3<br />

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20<br />

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SC-70 4L<br />

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SKY65404-31<br />

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and ISM Band<br />

4900–5900 5800 13 1.2 20 9 3.3<br />

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11<br />

(10–15)<br />

DFN 6L<br />

1.5 x 1.5 x 0.45<br />

SKY65405-21<br />

2.4 GHz WLAN<br />

and ISM Band<br />

2400–2500 2450 15 1.1 24 15 3.3<br />

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12<br />

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Skyworks Green products are compliant to all applicable materials legislation and are halogen-free. For additional <strong>in</strong>formation, refer to Skyworks Def<strong>in</strong>ition of Green, document number SQ04-0074.<br />

Samples and Evaluation Boards Available at www.skyworks<strong>in</strong>c.com


High <strong>Frequency</strong> Products<br />

NEW LITERATURE<br />

Wireless Backhaul<br />

Application Profile<br />

Anatech Electronics announces the<br />

availability of an application profile<br />

that details the vital role filters<br />

play <strong>in</strong> backhaul of wireless systems<br />

from cell sites to fiber nodes<br />

or carrier’s central location.<br />

Provid<strong>in</strong>g backhaul for third-and<br />

fourth-generation wireless systems<br />

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data rates dramatically <strong>in</strong>crease as<br />

a result of high-speed wireless<br />

access methods such as HSPA+,<br />

LTE, and WiMAX. <strong>Microwave</strong><br />

po<strong>in</strong>t-to-po<strong>in</strong>t l<strong>in</strong>ks are prov<strong>in</strong>g to<br />

be a cost-effective solution. As<br />

always, <strong>in</strong>terference is always an<br />

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“The Importance of Filters <strong>in</strong><br />

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Anatech Electronics<br />

www.anatechelectronics.com<br />

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New Power Source Web Site<br />

Versatile Power, Inc. has<br />

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Versatile Power, Inc.<br />

www.versatilepower.com<br />

Global BTS Antenna Report<br />

The global BTS antenna market<br />

decl<strong>in</strong>ed by 16.3 % <strong>in</strong> 2010, accord<strong>in</strong>g<br />

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Wireless Research titled “Global<br />

BTS Antenna Market Analysis and<br />

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year and are expected to <strong>in</strong>crease<br />

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Information for purchase of the full<br />

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EJL Wireless Research<br />

www.ejlwireless.com<br />

Laboratory<br />

(RF)MicroProbe<br />

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Research Performance / Student Price<br />

66 High <strong>Frequency</strong> Electronics<br />

ProbePo<strong>in</strong>t CPW-μStrip<br />

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High <strong>Frequency</strong> Products<br />

NEW PRODUCTS<br />

Diversity Switches<br />

Skyworks has <strong>in</strong>troduced two double-pole,<br />

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ideal for wireless routers, pr<strong>in</strong>ter<br />

modules, high power access po<strong>in</strong>ts,<br />

and WLAN customer premise and<br />

<strong>in</strong>frastructure equipment given<br />

their p<strong>in</strong>-to-p<strong>in</strong> compatibility with<br />

high- and low-power devices.<br />

Skyworks Solutions, Inc.<br />

www.skyworks<strong>in</strong>c.com<br />

Fixed <strong>Frequency</strong> Synthesizer<br />

Z-Communications, Inc. announces<br />

a new RoHS compliant fixed frequency<br />

synthesizer model<br />

SFS1900A-LF <strong>in</strong> L-band. This is a<br />

s<strong>in</strong>gle frequency synthesizer that<br />

operates at 1900 MHz. It features<br />

a typical phase noise of –98 dBc/Hz<br />

at 10 kHz offset and typical sideband<br />

spurs of –70 dBc. The<br />

SFS1900A-LF is designed to deliver<br />

a typical output power of 0 dBm<br />

Integer-N Synthesizers<br />

L<strong>in</strong>ear Technology announces the<br />

LTC6946, the first device <strong>in</strong> a family<br />

of high performance <strong>in</strong>teger-N frequency<br />

synthesizers with <strong>in</strong>tegrated<br />

VCO, deliver<strong>in</strong>g –226 dBc/Hz normalized<br />

closed-loop <strong>in</strong>-band phase<br />

noise, superior –274 dBc/Hz normalized<br />

<strong>in</strong>-band 1/f noise, and –103 dBc<br />

spurious output. In a typical<br />

900 MHz application, these performance attributes help to achieve a<br />

closed-loop phase noise of –100 dBc/Hz at 1 kHz offset. The device is<br />

available <strong>in</strong> three frequency options: the LTC6946-1 tunes from 2.240 to<br />

3.740 GHz; the LTC6946-2 from 3.080 to 4.910 GHz; and the LTC6946-3<br />

covers 3.840 to 5.790 GHz. In addition, each part has an on-chip output<br />

divider that is programmable from 1 through 6 to extend frequency coverage<br />

to as low as 373 MHz. This family of devices <strong>in</strong>tegrates a low noise<br />

5.7 GHz phase-locked loop (PLL), which <strong>in</strong>cludes a reference divider,<br />

phase-frequency detector (PFD) with phase-locked <strong>in</strong>dicator, ultralow<br />

noise charge pump, and <strong>in</strong>teger feedback divider to atta<strong>in</strong> very low noise<br />

PLL operation. The PLL circuit is tightly coupled to a low noise VCO as<br />

well as <strong>in</strong>ternal self-calibration to ensure optimum VCO resonator tun<strong>in</strong>g<br />

for best phase noise performance. The VCO requires no external components.<br />

The on-chip SPI compatible bidirectional serial port allows frequency<br />

tun<strong>in</strong>g and control, and read back of register and loop status<br />

<strong>in</strong>formation.<br />

L<strong>in</strong>ear Technology<br />

www.l<strong>in</strong>ear.com<br />

with a VCO voltage supply of 5 Vdc<br />

while draw<strong>in</strong>g 25 mA (typical) and<br />

a phase locked loop voltage of 3.3<br />

Vdc while draw<strong>in</strong>g 10 mA (typical)<br />

over the temperature range of –40º<br />

to 85ºC. It features typical 2nd harmonic<br />

suppression of –20 dBc and<br />

comes <strong>in</strong> Z-Comm’s <strong>in</strong>dustry standard<br />

PLL-V12N package measur<strong>in</strong>g<br />

0.60 × 0.60 × 0.13 <strong>in</strong>. It is available<br />

<strong>in</strong> tape and reel packag<strong>in</strong>g for<br />

production requirements<br />

Z-Communications, Inc.<br />

www.zcomm.com<br />

TO-8 VCO<br />

Crystek’s CVCOT8BE-0800-1600<br />

TO-8 VCO (voltage controlled oscillator)<br />

operates from 800 to 1600<br />

MHz and provides high-performance<br />

frequency control <strong>in</strong> harsh,<br />

demand<strong>in</strong>g environments. These<br />

VCOs feature a typical phase noise<br />

of –92 dBc/Hz at 10 kHz offset.<br />

Tun<strong>in</strong>g sensitivity is rated at 79<br />

MHz/V. Pull<strong>in</strong>g and Push<strong>in</strong>g are<br />

m<strong>in</strong>imized to 20.0 MHz and 4.0<br />

MHz/V, respectively; second harmonic<br />

suppression is –10 dBc typical.<br />

The CVCOT8BE l<strong>in</strong>e features<br />

a full-function<strong>in</strong>g VCO <strong>in</strong> a rugged,<br />

hermetically sealed TO-8 package<br />

to protect the VCO from moisture,<br />

contam<strong>in</strong>ants and other elements.<br />

The metal-can construction features<br />

gold plated p<strong>in</strong>s with no<br />

<strong>in</strong>ternal wire bonds for enhanced<br />

signal <strong>in</strong>tegrity.<br />

Crystek Corporation<br />

www.crystek.com<br />

RF Downconverter<br />

SignalCore has just announced the<br />

release of a broadband RF downconverter.<br />

With frequency range of<br />

20 MHz to 1.3 GHz, this downconverter<br />

is available <strong>in</strong> three form<br />

factors—USB, PXI, and a core<br />

module for OEM use and customized<br />

system <strong>in</strong>tegration. It uses<br />

68 High <strong>Frequency</strong> Electronics


INCREDIBLE<br />

HXG AMPLIFIERS<br />

IP3 +46 dBm!<br />

P1dB +23 dBm 5V @ 146 mA<br />

<br />

M<strong>in</strong>i-Circuits System In Package<br />

50 <strong>in</strong>/out...no match<strong>in</strong>g required<br />

Outstand<strong>in</strong>g IP3, at low DC power. M<strong>in</strong>i-Circuits HXG<br />

amplifiers feature an eye-popp<strong>in</strong>g IP3 of +46 dBm, at only<br />

730 mW DC power. A typical ga<strong>in</strong> of 15 dB, output power of<br />

23 dBm, and an IP3/P1dB ratio of 23 dB make them very useful<br />

for output stage amplifiers. All this, and surpris<strong>in</strong>gly low noise<br />

figures (2.4 dB) extend their usefulness to receiver front-end<br />

circuitry! All <strong>in</strong> all, the HXG family delivers <strong>in</strong>credible performance<br />

with less heat dissipation, for greater reliability and a longer life.<br />

MSiP br<strong>in</strong>gs it all together. Our exclusive M<strong>in</strong>i-Circuits System<br />

<strong>in</strong> Package techniques utilize load-pull technology and careful<br />

impedance match<strong>in</strong>g to reach new levels of performance<br />

0.25 x 0.27 x 0.09"<br />

with<strong>in</strong> a t<strong>in</strong>y 6.4 x 6.9 mm footpr<strong>in</strong>t. Input and output ports<br />

matched to 50 elim<strong>in</strong>ate the need for external components<br />

and additional PCB space! Bottom-l<strong>in</strong>e, you get outstand<strong>in</strong>g<br />

performance, with built-<strong>in</strong> sav<strong>in</strong>gs that really add up.<br />

Our first two HXG models are optimized for low ACPR at<br />

cellular frequencies of 700-900 MHz and 1.7-2.2 GHz. They’re<br />

also ideal for applications <strong>in</strong> high-EMI environments and <strong>in</strong>strumentation,<br />

where low distortion is essential. HXG performance<br />

is only available at M<strong>in</strong>i-Circuits, and our new models are ready<br />

to ship today, so act now and see what they can do for you!<br />

Model Freq Ga<strong>in</strong> P1dB NF IP3 Price<br />

(GHz) (typ) ( typ) (typ ) (typ ) (qty. 1000)<br />

HXG-122+ 0.5-1.2 15 dB 23 dBm 2.2 47 $ 2.75<br />

HXG-242+ 0.7-2.4 15 dB 23 dBm 2.4 46 $ 2.75<br />

See m<strong>in</strong>icircuits.com for specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />

M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />

$<br />

2 75<br />

from ea.(qty.1000)<br />

®<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

492 rev. A


High <strong>Frequency</strong> Products<br />

NEW PRODUCTS<br />

fast VCO tun<strong>in</strong>g, exhibits low<br />

phase noise, and has wide dynamic<br />

range. SignalCore’s USB-controlled<br />

SC5301A RF downconverter<br />

comes <strong>in</strong> a compact 1U form factor<br />

that is convenient for benchtop<br />

use, or can be rack-mounted with<br />

one of SignalCore’s standard<br />

mount<strong>in</strong>g kits.<br />

SignalCore<br />

www.signalcore.com<br />

GaAs MMIC SPDT Switches<br />

Renesas Electronics and California<br />

Eastern Laboratories (CEL) are<br />

now shipp<strong>in</strong>g two new high power<br />

handl<strong>in</strong>g GaAs MMIC SPDT<br />

switches, the UPG2415T6X and<br />

UPG2415TK. Both switches have<br />

4-6 dB higher power handl<strong>in</strong>g<br />

capability compared to standard<br />

Wi-Fi Switch ICs and are ideal for<br />

access po<strong>in</strong>ts and applications<br />

requir<strong>in</strong>g higher l<strong>in</strong>earity, such as<br />

Video and Media Stream<strong>in</strong>g over<br />

Wireless. The UPG2415T6X and<br />

UPG2415TK provide designers<br />

with a comb<strong>in</strong>ation of bandwidth<br />

to 6 GHz, low <strong>in</strong>sertion loss, high<br />

isolation, high power handl<strong>in</strong>g<br />

capability and compact packag<strong>in</strong>g.<br />

Available now from CEL. Pric<strong>in</strong>g<br />

for the UPG2415T6X is $0.39; pric<strong>in</strong>g<br />

for the UPG2415TK is $0.38;<br />

both at 100K pcs.<br />

California Eastern Laboratories<br />

www.cel.com<br />

Signal Analyzers<br />

Agilent Technologies Inc. <strong>in</strong>troduced<br />

two solutions for analysis<br />

and generation of wide bandwidth<br />

signals. The solutions <strong>in</strong>clude a<br />

160-MHz analysis bandwidth<br />

option for the high-performance<br />

PXA signal analyzer and Signal<br />

Studio software for 802.11ac signal<br />

creation. Wider bandwidth signal<br />

analysis, up to 160 MHz, is necessary<br />

to cover all of the bandwidths<br />

supported by 802.11ac. Agilent’s<br />

PXA signal analyzer with 160-<br />

MHz bandwidth addresses this<br />

need, as well as any other application<br />

that requires eng<strong>in</strong>eers to<br />

analyze wider bandwidth signals.<br />

A critical step <strong>in</strong> test<strong>in</strong>g any<br />

802.11 device is to generate standard-compliant<br />

802.11ac test signals.<br />

Agilent’s Signal Studio for<br />

WLAN software aids this task by<br />

enabl<strong>in</strong>g the creation of 802.11ac<br />

waveforms with BCC or LDPC<br />

channel cod<strong>in</strong>g, all MCS codes, and<br />

s<strong>in</strong>gle- or multi-user MIMO up to<br />

four streams.<br />

Agilent Technologies<br />

www.agilent.com<br />

Push-Pull Wideband Amp<br />

The ZHL-132LM-75+ by M<strong>in</strong>i-<br />

Circuits is a push-pull amplifier<br />

featur<strong>in</strong>g low second-and thirdorder<br />

distortion products across its<br />

40-1300 MHz bandwidth. Designed<br />

for a 6V/256 mA typ. power supply,<br />

with F connectors <strong>in</strong>/out, it’s a<br />

high-value, low-cost solution provid<strong>in</strong>g<br />

a 14-dB ga<strong>in</strong> for CATV,<br />

<strong>in</strong>strumentation, and many other<br />

applications at VHF, UHF, and<br />

lower L-band frequencies. The<br />

rugged, alum<strong>in</strong>um alloy case measures<br />

3.75 × 2.0 × 0.80” high.<br />

M<strong>in</strong>i-Circuits<br />

www.m<strong>in</strong>icircuits.com<br />

8-Way Splitter<br />

M/A-COM Technology Solutions<br />

Inc. <strong>in</strong>troduced an 8-way active<br />

splitter for CATV applications.<br />

Featur<strong>in</strong>g a default-on loopthrough<br />

path, the MAAM-010237<br />

allows for access to the cable signal<br />

even when the CPE box is powered<br />

down. The MAAM-010237 is a<br />

highly l<strong>in</strong>ear 8-way active splitter<br />

with low distortion and low noise<br />

figure. Designed for operation from<br />

50 to 1100 MHz, the MAAM-<br />

010237 is packaged <strong>in</strong> a RoHS<br />

compliant leadless 4 mm PQFN<br />

package. The 8-way splitter is fabricated<br />

us<strong>in</strong>g M/A-COM Tech’s E/D<br />

pHEMT process. Production quantities<br />

and samples are available<br />

from stock.<br />

M/A-COM Technology Solutions<br />

www.macomtech.com<br />

HCMOS Oscillators<br />

Fox Electronics now offers the F300<br />

series of HCMOS oscillators. The 1-<br />

volt oscillators <strong>in</strong>corporate a standby<br />

function that reduces the oscillator’s<br />

current consumption to 5<br />

micro amps for more efficient power<br />

usage. Available <strong>in</strong> a compact 3.2 ×<br />

2.5 mm package, the small form factor<br />

F300 series <strong>in</strong>cludes models<br />

with stabilities rang<strong>in</strong>g from ±20 to<br />

±100 ppm. The new oscillators offer<br />

a low current draw of 2.5 mA across<br />

the 1.8 to 32.0 MHz frequency<br />

range and 3.5 mA from 32.1 to 50.0<br />

MHz. Fox’s new series of RoHScompliant<br />

oscillators are ideal for<br />

use <strong>in</strong> environments with m<strong>in</strong>imal<br />

air circulation, such as compact consumer<br />

electronics and weatherproof<br />

enclosures. Portable and battery-powered<br />

devices, <strong>in</strong>clud<strong>in</strong>g<br />

satellite and terrestrial radio;<br />

WiMax, 802.11 and Bluetooth wireless;<br />

wired and optical networks for<br />

voice, data and Internet as well as<br />

automotive and test equipment;<br />

remote sens<strong>in</strong>g equipment; and<br />

GPS technology are also ideal applications<br />

for the F300 oscillators.<br />

Fox Electronics<br />

www.foxonl<strong>in</strong>e.com<br />

70 High <strong>Frequency</strong> Electronics


TE Connectivity<br />

RF COAXIAL SOLUTIONS<br />

TE Connectivity offers the broadest range of RF Coaxial<br />

Interconnect products <strong>in</strong> the <strong>in</strong>dustry today. Our RF Coax portfolio<br />

is built on our strong heritage of the <strong>in</strong>dustry’s lead<strong>in</strong>g brand names<br />

such as AMP, M/A-COM, Microdot, and Tyco Electronics, as well as<br />

product l<strong>in</strong>es formerly known as Omni-Spectra and Adams Russell.<br />

For more than 25 years, <strong>Microwave</strong> Components has been deliver<strong>in</strong>g<br />

these quality products and superior technical support to the <strong>in</strong>dustry with<br />

an extensive <strong>in</strong>ventory of commercial and Mil Approved products.<br />

Call us today and put our experience to work for you...<br />

Product Feature<br />

OSP & OSSP Bl<strong>in</strong>d Mate<br />

Connectors<br />

Phone: (888) 591-4455 or (772) 286-4455 Fax: (772) 286-4496<br />

E-mail: adm<strong>in</strong>@microwavecomponents<strong>in</strong>c.com<br />

Web Site: www.microwavecomponents<strong>in</strong>c.com<br />

AMP, Microdot, Tyco Electronics, TE Connectivity,<br />

TE Connectivity (logo) and TE (logo) are Trademarks<br />

AS 9120<br />

ISO 9001:2000<br />

CERTIFIED


High <strong>Frequency</strong> Products<br />

NEW PRODUCTS<br />

allow the HMC829LP6GE to generate<br />

frequencies from 45 to 1050<br />

MHz, 1400 to 2100 MHz, and 2800<br />

to 4200 MHz. The HMC829LP6GE<br />

is ideal for very high data rate<br />

radios, DDS replacement, phased<br />

array applications, CATV equipment<br />

and cellular/4G/WiMax<br />

<strong>in</strong>frastructure applications.<br />

Hittite <strong>Microwave</strong> Corporation<br />

www.hittite.com<br />

version 8.0 for ADS customers<br />

<strong>in</strong>troduces forty-six (46) new Global<br />

Models for passive RLC’s, and eighteen<br />

(18) new non-l<strong>in</strong>ear models for<br />

diodes, switches, amplifiers, and<br />

transistors. Designers can download<br />

the free model library,<br />

Modelithics SELECT from the<br />

Company website.<br />

Modelithics, Inc.<br />

www.modelithics.com<br />

RF Power Capacitors<br />

AVX Corporation has expanded its<br />

HQ Series MLC surface mount RF<br />

power capacitors to <strong>in</strong>clude P90<br />

dielectric versions for high power<br />

high frequency applications, such<br />

as medical and <strong>in</strong>dustrial electronics.<br />

The HQ Series MLC with the<br />

P90 dielectric material features an<br />

ultra-low equivalent series resistance<br />

(ESR) and dissipation factor<br />

at high frequencies. The HQ Series<br />

capacitor with P90 dielectric is<br />

now available <strong>in</strong> E case sizes. The<br />

HQ Series power capacitors are<br />

designed for 300 to 7,200V applications<br />

and feature a dielectric<br />

strength of 120% of rated WVDC.<br />

The devices can handle the high<br />

power and high voltage levels of<br />

RF power amplifiers, <strong>in</strong>ductive<br />

heat<strong>in</strong>g, high magnetic field environments<br />

(MRI coils), and medical<br />

and <strong>in</strong>dustrial electronics.<br />

AVX Corporation<br />

www.avx.com<br />

Fractional-N PLL<br />

Hittite <strong>Microwave</strong> Corporation has<br />

<strong>in</strong>troduced the HMC829LP6GE, a<br />

low noise, wide band, Fractional-N<br />

phase locked loop (PLL) that features<br />

an <strong>in</strong>tegrated voltage controlled<br />

oscillator (VCO) with a fundamental<br />

frequency of 2800 to<br />

4200 MHz, and an <strong>in</strong>tegrated VCO<br />

output divider (divide by<br />

1/2/4/6.../60/62). These features<br />

EM Design Software<br />

Cobham Technical Services has<br />

announced a new release of the<br />

Concerto electromagnetic design<br />

software for RF and microwave<br />

applications from its Vector Fields<br />

Software product l<strong>in</strong>e. The latest<br />

version—Concerto v7.5R1—<strong>in</strong>corporates<br />

numerous enhancements<br />

to accelerate every aspect of<br />

design, simulation, analysis and<br />

optimization. Many of the<br />

enhancements <strong>in</strong> this release center<br />

on the 3D geometric Modeler<br />

that forms an <strong>in</strong>tegral part of all<br />

Concerto configurations. This has<br />

new mesh<strong>in</strong>g options for the f<strong>in</strong>ite<br />

element (FE) Eigenvalue solver,<br />

and the Modeller now provides<br />

access to a range of additional features<br />

<strong>in</strong> Concerto’s f<strong>in</strong>ite difference<br />

time doma<strong>in</strong> (FDTD) simulation<br />

eng<strong>in</strong>e.<br />

Cobham Technical Services<br />

www.cobham.com/technicalservices<br />

Model Libraries<br />

Modelithics, Inc. has released an<br />

enhanced version of their l<strong>in</strong>ear<br />

and non-l<strong>in</strong>ear system level model<br />

libraries for RF, microwave and millimeter-wave<br />

device and components.<br />

The Modelithics COM-<br />

PLETE Library version 8.0 for<br />

Agilent Advanced Design System<br />

(ADS) customers is now fully compatible<br />

with ADS 2011. Modelithics’<br />

Hybrid Coupler<br />

Florida RF Labs has expanded the<br />

HybriX ® coupler product l<strong>in</strong>e with<br />

the <strong>in</strong>troduction of a new X-band<br />

hybrid coupler, HPX2F. With operat<strong>in</strong>g<br />

frequency of 8 to 12 GHz,<br />

HPX2F is designed for X-band<br />

applications <strong>in</strong>clud<strong>in</strong>g satellite,<br />

radar, po<strong>in</strong>t-to-po<strong>in</strong>t radio, and<br />

telemetry. The multi-layered PTFE<br />

construction of HPX2F is thermally<br />

stable and compatible with common<br />

PWB materials. Optimal circuit<br />

performance is easily achievable<br />

when us<strong>in</strong>g HPX2F with our<br />

Diamond Rf Resistives X-band<br />

term<strong>in</strong>ations. As with other Hybrix<br />

couplers, HPX2F is available <strong>in</strong><br />

both RoHS-compliant and t<strong>in</strong>-lead<br />

plat<strong>in</strong>g. HPX2F can be ordered<br />

with a space-level qualification<br />

test package that <strong>in</strong>cludes a true<br />

multipaction test performed at<br />

atmospheric pressure of 10 -5 torr<br />

or lower. HPX2F is delivered <strong>in</strong><br />

tape and reel packag<strong>in</strong>g for ease of<br />

use <strong>in</strong> pick-and-place assembly.<br />

Florida RF Labs & EMC Technology<br />

www.rflabs.com<br />

Mid-Range Signal Generator<br />

Rohde & Schwarz has enhanced its<br />

analog R&S SMB100A mid-range<br />

signal generator by add<strong>in</strong>g new<br />

frequency options. The R&S SMB-<br />

72 High <strong>Frequency</strong> Electronics


TINY<br />

Wideband<br />

Transformers<br />

TOP HAT<br />

TM<br />

NC<br />

0.08" x 0.05"<br />

TC<br />

0.15"x0.15"<br />

0.15-6200 MHz RoHS<br />

Rugged, repeatable performance.<br />

At M<strong>in</strong>i-Circuits, we’re passionate about transformers. We even<br />

make own transmission l<strong>in</strong>e wire under tight manufactur<strong>in</strong>g<br />

control, and utilize all-welded connections to maximize<br />

performance, reliability, and repeatability. And for signals up<br />

to 6 GHz, our rugged LTCC ceramic models feature wraparound<br />

term<strong>in</strong>ations for your visual solder <strong>in</strong>spection, and<br />

they are even offered <strong>in</strong> packages as small as 0805!<br />

Cont<strong>in</strong>ued <strong>in</strong>novation: Top Hat.<br />

A M<strong>in</strong>i-Circuits exclusive, this new feature is now available on<br />

every open-core transformer we sell. Top Hat speeds<br />

customer pick-and-place throughput <strong>in</strong> four dist<strong>in</strong>ct ways:<br />

(1) faster set-up times, (2) fewer missed components,<br />

¢<br />

as low as99 each (qty. 1000)<br />

compliant.<br />

(3) better placement accuracy and consistency,<br />

and (4) high-visibility mark<strong>in</strong>gs for quicker visual<br />

identification and <strong>in</strong>spection.<br />

More models, to meet more needs<br />

M<strong>in</strong>i-Circuits has a variety of over 200 SMT models <strong>in</strong><br />

stock. So for RF or microwave baluns and transformers,<br />

with or without center taps or DC isolation, you can<br />

probably f<strong>in</strong>d what you need at m<strong>in</strong>icircuits.com. Enter<br />

your requirements, and Yoni2, our patented search<br />

eng<strong>in</strong>e, can identify a match <strong>in</strong> seconds. And new custom<br />

designs are just a phone call away, with surpris<strong>in</strong>gly<br />

quick turnaround times ga<strong>in</strong>ed from over 40 years of<br />

manufactur<strong>in</strong>g experience!<br />

See m<strong>in</strong>icircuits.com for technical specifications, performance data, pric<strong>in</strong>g, and real-time, <strong>in</strong>-stock availability!<br />

M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what Value is all about!<br />

®<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

377 rev X


High <strong>Frequency</strong> Products<br />

NEW PRODUCTS<br />

B120/B120L and R&S SMB-<br />

B140/B140L options (L versions<br />

without step attenuator) enable<br />

the generator to cover the frequency<br />

range from 100 kHz to 20 and 40<br />

GHz, respectively. The R&S<br />

SMB100A can now handle everyth<strong>in</strong>g<br />

from analog RF to microwave<br />

applications. In the new frequency<br />

ranges, the R&S SMB100A offers a<br />

wide dynamic range of –120 dBm<br />

to +14 dBm as standard. New high<br />

power options—the R&S SMB-B31<br />

(for the 20 GHz model) and the<br />

R&S SMB-B32 (for the 40 GHz<br />

model)—make it possible to<br />

achieve an output power of max.<br />

+25 dBm. The new options allow<br />

users to skip the practice of loop<strong>in</strong>g<br />

<strong>in</strong> an external amplifier to achieve<br />

higher output power. Both options<br />

are available now.<br />

Rohde & Schwarz<br />

www.rohde-schwarz.com<br />

Downconverters<br />

NXP Semiconductors N.V. <strong>in</strong>troduced<br />

the TFF101xHN, a family of<br />

<strong>in</strong>tegrated downconverters for use<br />

<strong>in</strong> low noise block (LNB) 10.7-GHz<br />

to 12.75-GHz Ku band satellite<br />

receiver systems. Designed for<br />

downl<strong>in</strong>k signal reception for TV<br />

satellite dishes, NXP’s new family of<br />

DVB-S compliant downconverters<br />

consume 50% less current (52 mA)<br />

than other <strong>in</strong>tegrated solutions. The<br />

TFF101xHN family comes <strong>in</strong> a leadless<br />

16-p<strong>in</strong> package with a conversion<br />

ga<strong>in</strong> rang<strong>in</strong>g from 37 to 45 dB.<br />

They also offer <strong>in</strong>tegrated phase<br />

noise of 1.5 degrees RMS and a low<br />

noise figure of 7 dB.<br />

NXP Semiconductors N.V.<br />

www.nxp.com<br />

Low Noise Amplifiers<br />

NuWaves Eng<strong>in</strong>eer<strong>in</strong>g has expanded<br />

their series of High Intercept<br />

Low Noise Amplifiers (HILNA)<br />

with the <strong>in</strong>troduction of the HILNA<br />

3G. The HILNATM 3G covers the<br />

broad frequency range from 1 to 3<br />

GHz with a ga<strong>in</strong> of 50 dB and is<br />

even smaller than its predecessors<br />

boast<strong>in</strong>g a total of 3.3 cubic <strong>in</strong>ches<br />

and weigh<strong>in</strong>g only 3 oz. It is ideal<br />

for system <strong>in</strong>tegration where footpr<strong>in</strong>t,<br />

high ga<strong>in</strong> and broadband<br />

operation are determ<strong>in</strong><strong>in</strong>g factors.<br />

NuWaves Eng<strong>in</strong>eer<strong>in</strong>g<br />

www.nuwaves-ltd.com<br />

Variable Ga<strong>in</strong> Amplifier<br />

Avago Technologies announced a<br />

high-l<strong>in</strong>earity variable ga<strong>in</strong> amplifier<br />

(VGA) module for base transceiver<br />

station (BTS) applications. The<br />

new small-footpr<strong>in</strong>t ALM-81224<br />

VGA module replaces exist<strong>in</strong>g discrete<br />

solutions, provid<strong>in</strong>g significant<br />

board space sav<strong>in</strong>gs and shorten<strong>in</strong>g<br />

design cycle time. Operat<strong>in</strong>g<br />

<strong>in</strong> a broad frequency band from<br />

1450 to 2750 MHz, the module<br />

addresses cellular BTS automatic<br />

ga<strong>in</strong> control (AGC) and temperature<br />

compensation circuitry applications.<br />

Available <strong>in</strong> a compact 6.0 ×<br />

6.0 × 1.0 mm package, the module<br />

offers low current consumption of<br />

383 mA. The module’s <strong>in</strong>put is fullymatched<br />

to 50 ohms and output<br />

match can be tuned for optimal performance<br />

at a particular frequency<br />

band with<strong>in</strong> the operation range,<br />

m<strong>in</strong>imiz<strong>in</strong>g the need for external<br />

match<strong>in</strong>g components and mak<strong>in</strong>g<br />

the solution easy to use.<br />

Avago Technologies<br />

www.avagotech.com<br />

Data Modules<br />

Laird Technologies, Inc. announced<br />

the release of its new BTM<br />

440/441/442/443 Bluetooth ®<br />

Enhanced Data modules. Meet<strong>in</strong>g<br />

full FCC, CE and Bluetooth SIG<br />

approvals, the new modules comply<br />

with the Bluetooth 2.1 standard.<br />

They are also available <strong>in</strong><br />

either AT command or Multipo<strong>in</strong>t<br />

API modes by default. The<br />

enhanced Multipo<strong>in</strong>t mode supports<br />

up to seven simultaneously<br />

connected slave devices; mak<strong>in</strong>g<br />

the modules an ideal embedded<br />

solution for more than just po<strong>in</strong>tto-po<strong>in</strong>t<br />

Bluetooth connections.<br />

Simple to configure and set up, the<br />

BTM440/441/442/443 series offers<br />

multiple advanced profiles on a<br />

s<strong>in</strong>gle module.<br />

Laird Technologies, Inc.<br />

www.lairdtech.com<br />

BERT Software Packages<br />

Anritsu Company <strong>in</strong>troduces two<br />

software packages for its MP2100A<br />

BERTWave series of BERT that<br />

create a s<strong>in</strong>gle-<strong>in</strong>strument solution<br />

that cuts the cost of test<strong>in</strong>g active<br />

optical cables (AOC) and direct<br />

attach cables (DAC) <strong>in</strong> half. With<br />

the software <strong>in</strong>stalled, the<br />

MP2100A BERTWave provides<br />

developers of communications<br />

equipment, servers, computers,<br />

electronic components and cables<br />

used <strong>in</strong> digital transmission systems<br />

with an all-<strong>in</strong>-one solution<br />

that supports jitter decomposition<br />

analysis, S21 transmission characteristics,<br />

and waveform simulation.<br />

The Jitter Analysis Software can<br />

separately measure each type of<br />

jitter, while the Transmission<br />

Analysis Software supports analysis<br />

of S21 transmission characteristics<br />

and waveform simulation.<br />

Install<strong>in</strong>g both software packages<br />

<strong>in</strong> the MP2100A adds high-speed<br />

post-simulation waveform analysis<br />

to the standard BER, Eye Pattern,<br />

and Eye Mask measurements.<br />

Anritsu Company<br />

www.us.anritsu.com<br />

74 High <strong>Frequency</strong> Electronics


PRODUCT HIGHLIGHTS<br />

...featur<strong>in</strong>g advertisers <strong>in</strong> High <strong>Frequency</strong> Electronics<br />

Surface Mount RF Transformer<br />

M<strong>in</strong>i-Circuits announces the<br />

TCM401WX+, a 50 ohm surface mount RF<br />

transformer. Operat<strong>in</strong>g temperature is<br />

–20°C to 85°C, RF power 0.25 W and DC<br />

current 30 mA. This transformer features<br />

wide bandwidth (3 to 800 MHz), good<br />

return loss, plastic base with solder plated<br />

leads, and is aqueous washable.<br />

Applications <strong>in</strong>clude CATV, VHF/UFH, balanced<br />

amplifier, and impedance match<strong>in</strong>g.<br />

Priced $1.99 each <strong>in</strong> quantities of 20.<br />

www.m<strong>in</strong>icircuits.com<br />

Low-Noise Medium PA<br />

MITEQ’s new Model JS3-18004000-40-15P<br />

is a state-of-the-art low-noise medium<br />

power amplifier with only 4 dB maximum<br />

noise figure and +15 dBm P 1dB . This model<br />

has a ga<strong>in</strong> of 32 dB m<strong>in</strong>imum <strong>in</strong> a small<br />

hermetically sealed package with field<br />

replaceable K-connectors. MIL-883 screen<strong>in</strong>g<br />

is also available. Different options such<br />

as ga<strong>in</strong>, noise figure and power output are<br />

also available.<br />

www.miteq.com<br />

Adjustable Delay L<strong>in</strong>e<br />

RLC Electronics’ manually adjustable<br />

delay l<strong>in</strong>e (phase shifter) offers cont<strong>in</strong>uous<br />

adjustment of electrical delay over the frequency<br />

range of DC-40 GHz. Adjustment is<br />

through a multiturn, lock<strong>in</strong>g shaft. Low<br />

<strong>in</strong>sertion loss (2.5 dB max) and VSWR are<br />

ma<strong>in</strong>ta<strong>in</strong>ed throughout the adjustment<br />

range. Impedance is 50 ohms, and power<br />

rat<strong>in</strong>g is 5 watts average. The unit comes<br />

with a choice of male or female 2.92 mm<br />

connectors and operates <strong>in</strong> a temperature<br />

range of –55 to +85 deg C. See Company<br />

website for pric<strong>in</strong>g <strong>in</strong>formation.<br />

www.rlcelectronics.com<br />

Switch<strong>in</strong>g Regulator<br />

L<strong>in</strong>ear Technology Corporation announces<br />

the LT3641, a dual channel, current mode<br />

step-down switch<strong>in</strong>g regulator with a<br />

power-on reset and watchdog timer. Its 4V<br />

to 42V <strong>in</strong>put voltage range with 55V transient<br />

capability makes it ideal for load<br />

dump and cold crank conditions. The<br />

LT3641 uses a unique dual channel design<br />

with a high <strong>in</strong>put voltage nonsynchronous<br />

channel, deliver<strong>in</strong>g up to 1.1 A of cont<strong>in</strong>uous<br />

output current.<br />

www.l<strong>in</strong>ear.com<br />

Coaxial Power Splitter/Comb<strong>in</strong>er<br />

M<strong>in</strong>i-Circuits’ model ZX10-2-183+ is a<br />

coaxial 2-way-0° power splitter/comb<strong>in</strong>er.<br />

Features <strong>in</strong>clude very wideband (1500 to<br />

18000 MHz), low <strong>in</strong>sertion loss (0.8 dB<br />

typ.), good isolation (22 dB typ.), and up to<br />

5 W power <strong>in</strong>put as splitter. Applications<br />

<strong>in</strong>clude PCS/DCS, defense and federal communications<br />

and <strong>in</strong>strumentation.<br />

www.m<strong>in</strong>icircuits.com<br />

Simulation Software Update<br />

ACS has recently released a new version of<br />

its LINC2 Pro RF and microwave circuit<br />

design software suite. Version 2.72 release<br />

L adds a new PIN diode model with forward<br />

and reverse (ON and OFF) characteristics<br />

modeled. Equations can be formulated<br />

that provide simulation of the ON resistance<br />

versus bias current, allow<strong>in</strong>g for tun<strong>in</strong>g<br />

of the PIN diode ON resistance <strong>in</strong> real<br />

time (with<strong>in</strong> the graph w<strong>in</strong>dow) as a function<br />

of applied bias voltage and current.<br />

www.appliedmicrowave.com<br />

Coaxial Band Stop Filter<br />

The ZX75BS-140+ from M<strong>in</strong>i-Circuits is a<br />

band stop filter built <strong>in</strong> a rugged and compact<br />

connectorized package. This filter<br />

offers good rejection <strong>in</strong> stopband (127.25 to<br />

152.75 MHz). It has repeatable performance<br />

across lots and consistent performance<br />

across temperature. Useful <strong>in</strong><br />

<strong>in</strong>strumentation system for <strong>in</strong>dustrial<br />

applications.<br />

www.m<strong>in</strong>icircuits.com<br />

TWT RF Amplifier<br />

A new 4 to 8.5 GHz, 30 watt amplifier has<br />

been <strong>in</strong>troduced by Dudley Lab. This<br />

amplifier is an all new unit built by Dudley<br />

Lab and fitted with a Siemens Tube and<br />

TWT power supply. The amplifier is provided<br />

<strong>in</strong> a rack mounted enclosure.<br />

Primary power requirement is 100 to<br />

240 VAC, 50/60 Hz.<br />

www.dudleylab.com<br />

PWM Generator<br />

L<strong>in</strong>ear Technology Corporation <strong>in</strong>troduces<br />

the LTC2991, an 8-channel I²C temperature,<br />

voltage and current monitor for 3V<br />

and 5V systems. The LTC2991 is a highly<br />

<strong>in</strong>tegrated monitor<strong>in</strong>g solution that <strong>in</strong>corporates<br />

a 14-bit ADC, 10ppm/°C voltage<br />

reference and I²C digital <strong>in</strong>terface to provide<br />

submillivolt voltage resolution and 1%<br />

current measurement, as well as ±0.7°C<br />

remote accuracy and ±1°C <strong>in</strong>ternal accuracy,<br />

when mak<strong>in</strong>g temperature measurements.<br />

www.l<strong>in</strong>ear.com


Directional/Bi-Directional<br />

COUPLERS<br />

5 kHz to 12 GHz up to 250W<br />

Look<strong>in</strong>g for couplers or power taps? M<strong>in</strong>i-Circuits has<br />

236 models <strong>in</strong> stock, and we’re add<strong>in</strong>g even more! Our<br />

versatile, low-cost solutions <strong>in</strong>clude surface-mount<br />

models down to 1 MHz, and highly evolved LTCC<br />

designs as small as 0.12 x 0.06", with m<strong>in</strong>imal <strong>in</strong>sertion<br />

loss and high directivity. Other SMT models are designed<br />

for up to 100W RF power, and selected core-and-wire<br />

models feature our exclusive Top Hat, for faster<br />

pick-and-place throughput.<br />

$<br />

1<br />

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from<br />

ea. (qty. 1000)<br />

At the other end of the scale, our new connectorized<br />

air-l<strong>in</strong>e couplers can handle up to 250W and frequencies<br />

as high as 12 GHz, with low <strong>in</strong>sertion loss (0.2 dB @ 9<br />

GHz, 1 dB @ 12 GHz) and exceptional coupl<strong>in</strong>g flatness!<br />

All of our couplers are RoHS compliant. So if you need<br />

a 50 or 75 , directional or bi-directional, DC pass or<br />

DC block coupler, for military, <strong>in</strong>dustrial, or commercial<br />

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and have it shipped today!<br />

See m<strong>in</strong>icircuits.com for specifications, performance data, and surpris<strong>in</strong>gly low prices!<br />

M<strong>in</strong>i-Circuits...we’re redef<strong>in</strong><strong>in</strong>g what VALUE is all about!<br />

®<br />

U.S. Patents<br />

7739260, 7761442<br />

ISO 9001 ISO 14001 AS 9100<br />

®<br />

P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500 Fax (718) 332-4661<br />

The Design Eng<strong>in</strong>eers Search Eng<strong>in</strong>e For detailed performance specs & shopp<strong>in</strong>g onl<strong>in</strong>e see<br />

IF/RF MICROWAVE COMPONENTS<br />

495 rev org


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ADVERTISER INDEX<br />

Company ...........................................................................Page<br />

ACS .......................................................................................................56<br />

Aethercomm..........................................................................................37<br />

Anaren...................................................................................................41<br />

AR Modular RF ....................................................................................27<br />

American Technical Ceramics .............................................................33<br />

AWR ......................................................................................................23<br />

Besser Associates .................................................................................78<br />

Carlisle..................................................................................................53<br />

Coilcraft ................................................................................................11<br />

C.W. Swift & Associates ..............................................................Cover 2<br />

Delta......................................................................................................32<br />

Dudley Lab ...........................................................................................75<br />

Dynawave..............................................................................................19<br />

Emerson Network Power .......................................................................4<br />

Florida RF Labs....................................................................................35<br />

IW <strong>Microwave</strong>.......................................................................................57<br />

J microTechnology................................................................................66<br />

L<strong>in</strong>ear Technology ................................................................................13<br />

L<strong>in</strong>ear Technology ................................................................................15<br />

Luff Research........................................................................................75<br />

Megaphase ............................................................................................61<br />

Micro Lambda Wireless .......................................................................21<br />

<strong>Microwave</strong> Components .......................................................................71<br />

M<strong>in</strong>i-Circuits...........................................................................................2<br />

M<strong>in</strong>i-Circuits.........................................................................................25<br />

M<strong>in</strong>i-Circuits.........................................................................................47<br />

M<strong>in</strong>i-Circuits.........................................................................................50<br />

M<strong>in</strong>i-Circuits.........................................................................................51<br />

M<strong>in</strong>i-Circuits.........................................................................................55<br />

M<strong>in</strong>i-Circuits.........................................................................................63<br />

M<strong>in</strong>i-Circuits.........................................................................................69<br />

M<strong>in</strong>i-Circuits.........................................................................................73<br />

M<strong>in</strong>i-Circuits.........................................................................................77<br />

MITEQ ....................................................................................................1<br />

MITEQ ..................................................................................................42<br />

MITEQ .........................................................................................Cover 4<br />

Molex ............................................................................................Cover 3<br />

Relcomm Technologies .........................................................................18<br />

Renaissance Electronics Corp/HXI .......................................................9<br />

RLC Electronics....................................................................................29<br />

Rogers Corporation ..............................................................................49<br />

Samtec...................................................................................................17<br />

San-tron ................................................................................................59<br />

Sector <strong>Microwave</strong> .................................................................................75<br />

SGMC <strong>Microwave</strong>.................................................................................31<br />

Skyworks Solutions..............................................................................65<br />

SW Tech ................................................................................................30<br />

Teledyne Cougar.....................................................................................7<br />

Teledyne Storm Products.....................................................................39<br />

Tru Corporation....................................................................................45<br />

Wenteq <strong>Microwave</strong> Corp ......................................................................75<br />

■ FIND OUR ADVERTISERS’ WEB SITES USING HFELINK<br />

1. Go to our company <strong>in</strong>formation Web site:<br />

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rem<strong>in</strong>der on the home page<br />

3. Companies <strong>in</strong> our current issue are listed, or you can choose<br />

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ADVERTISERS — REACH ACTIVE AND INTERESTED READERS!<br />

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Contact our experienced ad professionals today!<br />

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High <strong>Frequency</strong> Electronics (USPS 024-316) is published monthly by Summit Technical Media, LLC, 3 Hawk Dr., Bedford, NH 03110.<br />

Vol. 10 No. 10 October 2011. Periodicals Postage Paid at Manchester, NH and at additional mail<strong>in</strong>g offices.<br />

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Subscriptions are free to qualified technical and management personnel <strong>in</strong>volved <strong>in</strong> the design, manufacture and distribution of electronic equipment<br />

and systems at high frequencies. Copyright © 2011, Summit Technical Media, LLC<br />

October 2011 79


DESIGN NOTES<br />

Reader Feedback about PA Feedback<br />

In the last issue, we published a request for <strong>in</strong>formation<br />

on negative feedback <strong>in</strong> power amplifiers. In<br />

addition to forward<strong>in</strong>g the comments we received to the<br />

requester, we’ll share them with everyone.<br />

Gary,<br />

Have Mike take a look at Solid State Design by W.<br />

Hayward and D. DeMaw, ARRL 1977, pp 188-190.<br />

This is for bipolar amps with transformer output<br />

and resistive feedback, with graphs and <strong>in</strong>structions to<br />

make some sense of the trade-offs.<br />

I do not have a reference handy for the Norton lossless<br />

feedback amplifiers.<br />

Tom Munson (WF7LMZ)<br />

Peoria, AZ<br />

Gary,<br />

Here are some references from my library regard<strong>in</strong>g<br />

negative feedback and related circuit design.<br />

Several specifically address low frequency design, but<br />

the pr<strong>in</strong>ciples and methods are applicable to RF<br />

design as well.<br />

Dave Bowker (K1FK)<br />

Fort Kent, ME<br />

1. Langford-Smith, Radiotron Designer’s Handbook,<br />

4th edition, 1953, chapter 7, Negative Feedback,<br />

www.tubebooks.org/Books/RDH4.pdf<br />

2. “Harmonic Distortion and Negative Feedback <strong>in</strong><br />

Audio-<strong>Frequency</strong> Amplifiers,” BBC Eng<strong>in</strong>eer<strong>in</strong>g<br />

Tra<strong>in</strong><strong>in</strong>g Dept., 1950. www.tubebooks.org/Books/<br />

bbc_feedback.pdf<br />

3. Pappenfus, Bruene, Schoenike, S<strong>in</strong>gle Sideband<br />

Pr<strong>in</strong>cipals and Circuits, McGraw-Hill, 1964, Chapter<br />

13, Distortion Reduction. Available from most libraries<br />

participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>ter-library loan service.<br />

4. Landee, Davis, Albrecht, Electronic Designers<br />

Handbook, McGraw-Hill, 1957, Chapter 18, Pr<strong>in</strong>cipals<br />

of Feedback. Available from most public and <strong>in</strong>stitutional<br />

libraries participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>ter-library loan service.<br />

5. Editors & Eng<strong>in</strong>eers, The Radio Handbook, most<br />

editions after 15th edition have a chapter or sections<br />

devoted to RF Feedback; www.tubebooks.org/Books/<br />

orr_radio.pdf<br />

6. Gray, Graham, Radio Transmitters, McGraw-<br />

Hill, 1961, Chapter 6, Section 6-12, Negative<br />

Feedback; www.tubebooks.org/Books/radtrns.pdf<br />

7. Reference Data for Radio Eng<strong>in</strong>eers, 3rd edition,<br />

Federal Telephone and Radio Corp, 1949, Chapter 5,<br />

Fundamentals of Networks: Chapter 13. 4th edition<br />

atwww.tubebooks.org/Books/itt_ref_4.pdf<br />

8. Krauss, Bostian, Raab, Solid State Radio<br />

Eng<strong>in</strong>eer<strong>in</strong>g, John Wiley & Sons, 1980, Chapter 12.<br />

Available from most libraries participat<strong>in</strong>g <strong>in</strong> <strong>in</strong>terlibrary<br />

loan service.<br />

9. Seely, Electron-Tube Circuits, McGraw-Hill,<br />

1958, Chapter 5, Feedback <strong>in</strong> Amplifiers; www.tubebooks.org/Books/seely.pdf<br />

80 High <strong>Frequency</strong> Electronics


The choice is clear<br />

for all your RF needs.<br />

Custom solutions and<br />

standard products from<br />

a s<strong>in</strong>gle source.<br />

With decades of experience <strong>in</strong> the<br />

<strong>in</strong>terconnect <strong>in</strong>dustry, we know<br />

what’s important to eng<strong>in</strong>eers.<br />

That’s why Molex manufactures<br />

the world’s broadest l<strong>in</strong>e of radio<br />

frequency connectors, cable<br />

assemblies and custom products.<br />

Our RF solutions can be optimized<br />

to m<strong>in</strong>imize signal loss over a<br />

wide range of frequencies <strong>in</strong> a<br />

broad spectrum of sizes and styles<br />

of connectors. Plus, our serviceoriented<br />

team can turn around<br />

draw<strong>in</strong>gs <strong>in</strong> 48 hours and deliver<br />

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For the <strong>in</strong>dustry’s largest array of<br />

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www.molex.com/product/rf.html<br />

Get <strong>in</strong>fo at www.HFeL<strong>in</strong>k.com


RF/LO Conversion LO-to-RF<br />

Model <strong>Frequency</strong> Loss Image Rejection Isolation<br />

Number (GHz) (dB) Max. (dB) M<strong>in</strong>. (dB) M<strong>in</strong>.<br />

IMAGE REJECTION MIXERS<br />

IRM0204(*)C2(**) 2 - 4 7.5 18 20<br />

IRM0408(*)C2(**) 4 - 8 8 18 20<br />

IRM0812(*)C2(**) 8 - 12 8 18 20<br />

IRM1218(*)C2(**) 12 - 18 10 18 20<br />

IRM0208(*)C2(**) 2 - 8 9 18 18<br />

IRM0618(*)C2(**) 6 - 18 10 18 18<br />

IR1826NI7(**) 18 - 26 10.5 18 20<br />

IR2640NI7(**) 26 - 40 12 18 20<br />

Model<br />

RF/LO<br />

<strong>Frequency</strong><br />

Conversion<br />

Loss<br />

Balance<br />

Phase (±Deg.) Amplitude (±dB)<br />

LO-to-RF<br />

Isolation<br />

Number (GHz) (dB) Max. Typ./Max. Typ./Max. (dB) M<strong>in</strong>.<br />

I/Q DEMODULATORS<br />

IRM0204(*)C2Q 2 - 4 10.5 7.5/10 1.0/1.5 20<br />

IRM0408(*)C2Q 4 - 8 11 7.5/10 1.0/1.5 20<br />

IRM0812(*)C2Q 8 - 12 11 5/7.5 .75/1.0 20<br />

IRM1218(*)C2Q 12 - 18 13 10/15 1.0/1.5 20<br />

IRM0208(*)C2Q 2 - 8 12 7.5/10 1.0/1.5 18<br />

IRM0618(*)C2Q 6 - 18 13 10/15 1.0/1.5 18<br />

IR1826NI7Q 18 - 26 13.5 10/15 1.0/1.5 20<br />

IR2640NI7Q 26 - 40 15 10/15 1.0/1.5 20<br />

RF Conversion Carrier Carrier Suppression<br />

Model <strong>Frequency</strong> Loss Suppression Carrier - Fundamental IF<br />

Number (GHz) (dB) Max. (dBc) M<strong>in</strong>. (dBc) M<strong>in</strong>.<br />

IF DRIVEN MODULATORS<br />

SSM0204(*)C2MD(**) 2 - 4 9 20 20<br />

SSM0408(*)C2MD(**) 4 - 8 9 20 18<br />

SSM0812(*)C2MD(**) 8 - 12 9 20 20<br />

SSM1218(*)C2MD(**) 12 - 18 10 20 18<br />

SSM0208(*)C2MD(**) 2 - 8 9 20 18<br />

SSM0618(*)C2MD(**) 6 - 18 12 20 18<br />

For Carrier Driven Modulators, please contact MITEQ.<br />

MODEL NUMBER OPTION TABLE<br />

(**) IF FREQUENCY<br />

Add Letter OPTION (MHz)<br />

A 20 - 40<br />

B 40 - 80<br />

(*) LO/IF P1 dB C.P.<br />

Add Letter Power Range (dBm) (Typ.)<br />

L 10 - 13 dBm +6<br />

M 13 - 16 dBm +10<br />

H 17 - 20 dBm +15<br />

C 100 - 200<br />

Q<br />

DC - 500 (I/Q)<br />

Get <strong>in</strong>fo at www.HFeL<strong>in</strong>k.com

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