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BOULAIS et al.: THERMODYNAMICS AND TRANSPORT MODEL OF CHARGE INJECTION IN SILICON 2735<br />

devices under non-steady-state conditions,” Phys. Rev. B, Solid State,<br />

vol. 8, no. 8, pp. 3865–3874, Oct. 15, 1973.<br />

[17] P. Kireev, Semiconductor Physics. Moscow, Russia: MIR Publisher,<br />

1975.<br />

[18] R. Pierret, Advanced Semiconductor Fundamentals, 2nd ed. Englewood<br />

Cliffs, NJ: Prentice-Hall, 2002.<br />

[19] J.-Y. Degorce, J.-N. Gillet, F. Magny, <strong>and</strong> M. Meunier, “Threedimensional<br />

transient temperature field model for laser annealing,”<br />

J. Appl. Phys., vol. 97, no. 3, 033 520, Jan. 2005.<br />

[20] E. Takasuka et al., “Emissivity <strong>of</strong> liquid silicon in visible <strong>and</strong> infrared<br />

regions,” J. Appl. Phys., vol. 81, no. 9, p. 6384, May 1997.<br />

[21] R. T. Williams, M. N. Kabler, J. P. Long et al., “Electron energy distribution<br />

during pulsed laser annealing <strong>and</strong> damage <strong>of</strong> silicon,” Laser <strong>and</strong><br />

Electron-Beam Interaction With Solid, pp. 97–102, 1982.<br />

[22] V. M. Glazov <strong>and</strong> V. B. Koltsov, “Changes in the effective mass <strong>and</strong><br />

mobility <strong>of</strong> electrons as a result <strong>of</strong> melting <strong>of</strong> germanium <strong>and</strong> silicon,”<br />

Sov. Phys. Semicond., vol. 18, no. 10, pp. 1153–1156, 1984.<br />

[23] S. Chen et al., “Melting <strong>and</strong> surface deformation in pulsed laser surface<br />

micromodification <strong>of</strong> Ni-P disks,” J. Heat Transf., vol. 122, no. 1, pp. 107–<br />

112, Feb. 2000.<br />

[24] T. Schwarz-Selinger et al., “Micron-scale modifications <strong>of</strong> Si surface<br />

morphology by pulsed-laser texturing,” Phys. Rev. B, Condens. Matter,<br />

vol. 64, no. 15, p. 155 323, Oct. 2001.<br />

Jean-Yves Degorce received the M.A.Sc. degree in<br />

solid state physics from the University <strong>of</strong> Paris VI,<br />

Paris, France, in 1989 <strong>and</strong> the Ph.D. degree in laser<br />

matter interaction from the École Polytechnique de<br />

Montréal, Montreal, QC, Canada, <strong>and</strong> the Université<br />

de Bordeaux, Bordeaux, France, in 2000.<br />

From 2000 to 2005, he was a Lecturer <strong>and</strong><br />

Associate Researcher in laser processing with the<br />

Laser Processing Laboratory, Engineering Physics<br />

Department, École Polytechnique de Montréal. He<br />

is currently a Pr<strong>of</strong>essor in classe préparatoire aux<br />

gr<strong>and</strong>es écoles with the Université de Bordeaux. His current research interests<br />

include micro- <strong>and</strong> nanothermal modeling.<br />

Guillaume Wild received the Diploma degree in<br />

electrical engineering from the Ecole Superieure<br />

d’Electricite, Gif Sur Yvette, France, in 2002 <strong>and</strong><br />

the M.A.Sc. degree from the École Polytechnique de<br />

Montréal, Montreal, QC, Canada, in 2005, under the<br />

supervision <strong>of</strong> Pr<strong>of</strong>s. Y. Savaria <strong>and</strong> M. Meunier.<br />

He is currently with Siemens, Amberg, Germany.<br />

Étienne Boulais received the B.Ing. degree in engineering<br />

physics from the École Polytechnique de<br />

Montréal, Montreal, QC, Canada, in 2007, where<br />

he has been working toward the Ph.D. degree<br />

in the Laser Processing Laboratory, Engineering<br />

Physics Department, under the supervision <strong>of</strong><br />

Pr<strong>of</strong>.M.Meunier.<br />

His research topic is in the field <strong>of</strong> the simulation<br />

<strong>of</strong> laser–matter interaction.<br />

Yvon Savaria (S’77–M’86–SM’97–F’08) received<br />

the B.Ing. <strong>and</strong> M.A.Sc. degrees in electrical engineering<br />

from the École Polytechnique de Montréal,<br />

Montreal, QC, Canada, in 1980 <strong>and</strong> 1982, respectively,<br />

<strong>and</strong> the Ph.D. degree in electrical engineering<br />

from McGill University, Montreal, in 1985.<br />

Since 1985, he has been with the École Polytechnique<br />

de Montréal, where he is currently a Pr<strong>of</strong>essor<br />

<strong>and</strong> the Director <strong>of</strong> the microelectronics <strong>and</strong><br />

microsystems research group in the Electrical Engineering<br />

Department. He has carried out work in<br />

several areas related to microelectronic circuits <strong>and</strong> microsystems.<br />

Vincent Binet received the Diploma degree in<br />

electrical engineering from the Ecole Superieure<br />

d’Electricite, Gif Sur Yvette, France, <strong>and</strong> the<br />

M.A.Sc. degree in microelectronics from the École<br />

Polytechnique de Montréal, Montreal, QC, Canada,<br />

in 2007, under the supervision <strong>of</strong> Pr<strong>of</strong>s. Y. Savaria<br />

<strong>and</strong> M. Meunier.<br />

He is currently with STMicroelectronics,<br />

Grenoble, France, in the IP advanced team in<br />

audio R&D.<br />

Michel Meunier received the B.Ing. <strong>and</strong> M.A.Sc.<br />

degrees in engineering physics from the École Polytechnique<br />

de Montréal, Montreal, QC, Canada, in<br />

1978 <strong>and</strong> 1980, respectively, <strong>and</strong> the Ph.D. degree<br />

from the Massachusetts Institute <strong>of</strong> Technology,<br />

Cambridge, in 1984.<br />

He is currently the Director <strong>of</strong> the Laser Processing<br />

Laboratory, Engineering Physics Department,<br />

École Polytechnique de Montréal. For close to<br />

30 years, he has been involved in laser processing<br />

<strong>of</strong> various materials <strong>and</strong> he has published over<br />

260 papers in this field.<br />

Dr. Meunier is a Canadian Research Chair in laser micro/nanoengineering <strong>of</strong><br />

materials.

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