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Potentialities of modification of metal oxide varistor microstructures w warystorze przyczyniając się do eliminacji ze struktury warystora obszarów nieaktywnych elektrycznie. Natomiast wstępne modyfikowanie tlenku bizmutu tlenkami tzw. szkłotwórczymi jak PbO, SrO i MnO nie przynosi podobnego efektu. Słowa kluczowe: warystor ZnO, mikrostruktura, ceramika półprzewodnikowa, domieszkowanie, Bi 2 O 3 98
Z. Szczepański, R. Kisiel PL ISSN 0209-0058 MATERIAŁY ELEKTRONICZNE T. 37 - 2009 NR 1 SiC DIE-SUBSTRATE CONNECTIONS FOR HIGH TEMPERATURE APPLICATIONS * Zbigniew Szczepański 1 , Ryszard Kisiel 1 Silicon carbide (SiC) became very attractive material for high temperature and high power electronics applications due to its physical properties, which are not attainable in conventional Si semiconductor. However, the reliability of SiC devices is limited by assembly processes comprising die attachment and interconnections technology as well as the stability of ohmic contacts at high temperatures. The investigations of a die to substrate connection methods which can fulfill high temperature and high power requirements are the main focuses of the paper. In our researches following die attach technologies were applied: adhesive bonding with the use of organic and inorganic conductive compositions, solder bonding by means of gold germanium alloys, die bonding with the use of thermal conductive adhesive foil and joining technology based on low temperature sintering of silver nanoparticles. The applied bonding technologies are described and obtained results are presented. Keywords: SiC, die bonding 1. INTRODUCTION Silicon carbide (SiC) has gained increasing importance due to its advantages which created new possibilities for this semiconductor material in particular for high temperature and high power applications. Silicon carbide during the last years became the most developed and promising semiconductor material. Many publications 1) Institute of Microelectronics and Optoelectronics Warsaw University of Technology, Koszykowa 75, 00-662 Warszawa, Poland, e-mail address: kisiel@imio.pw.edu.pl * Praca prezentowana na XXXII International Conference of IMAPS - CPMP IEEE, Poland, Pułtusk, 21-24.09.2008 99
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