Characteristics: Triac - nptel
Characteristics: Triac - nptel
Characteristics: Triac - nptel
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Average power dissipation P av ): Specified as a function of the average forward current (I av ) for<br />
different conduction angles as shown in the figure 4.9. The current wave form is assumed to be<br />
half cycle sine wave (or square wave) for power frequency.<br />
P av<br />
30°<br />
60°<br />
90°<br />
φ = 180°<br />
i F<br />
Fig. 4.9: Average power dissipation vs average forward current in a thyristor.<br />
In the above diagram<br />
1 φ<br />
I<br />
av<br />
= i<br />
o<br />
F<br />
dθ<br />
2π ∫<br />
4.10<br />
1 φ<br />
P<br />
av<br />
= v<br />
o<br />
F<br />
i<br />
F<br />
dθ<br />
2π ∫<br />
4.11<br />
4.5.3 Gate Specifications<br />
( )<br />
( )<br />
Gate current to trigger (I GT ): Minimum value of the gate current below which reliable turn on<br />
of the thyristor can not be guaranteed. Usually specified at a given forward break over voltage.<br />
Gate voltage to trigger (V GT ): Minimum value of the gate cathode forward voltage below<br />
which reliable turn on of the thyristor can not be guaranteed. It is specified at the same break<br />
over voltage as I GT .<br />
Non triggering gate voltage (V GNT ): Maximum value of the gate-cathode voltage below which<br />
the thyristor can be guaranteed to remain OFF. All spurious noise voltage in the gate drive circuit<br />
must be below this level.<br />
Peak reverse gate voltage (V GRM ): Maximum reverse voltage that can appear between the gate<br />
and the cathode terminals without damaging the junction.<br />
I av<br />
φ<br />
ωt<br />
Version 2 EE IIT, Kharagpur 16