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Characteristics: Triac - nptel

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Average power dissipation P av ): Specified as a function of the average forward current (I av ) for<br />

different conduction angles as shown in the figure 4.9. The current wave form is assumed to be<br />

half cycle sine wave (or square wave) for power frequency.<br />

P av<br />

30°<br />

60°<br />

90°<br />

φ = 180°<br />

i F<br />

Fig. 4.9: Average power dissipation vs average forward current in a thyristor.<br />

In the above diagram<br />

1 φ<br />

I<br />

av<br />

= i<br />

o<br />

F<br />

dθ<br />

2π ∫<br />

4.10<br />

1 φ<br />

P<br />

av<br />

= v<br />

o<br />

F<br />

i<br />

F<br />

dθ<br />

2π ∫<br />

4.11<br />

4.5.3 Gate Specifications<br />

( )<br />

( )<br />

Gate current to trigger (I GT ): Minimum value of the gate current below which reliable turn on<br />

of the thyristor can not be guaranteed. Usually specified at a given forward break over voltage.<br />

Gate voltage to trigger (V GT ): Minimum value of the gate cathode forward voltage below<br />

which reliable turn on of the thyristor can not be guaranteed. It is specified at the same break<br />

over voltage as I GT .<br />

Non triggering gate voltage (V GNT ): Maximum value of the gate-cathode voltage below which<br />

the thyristor can be guaranteed to remain OFF. All spurious noise voltage in the gate drive circuit<br />

must be below this level.<br />

Peak reverse gate voltage (V GRM ): Maximum reverse voltage that can appear between the gate<br />

and the cathode terminals without damaging the junction.<br />

I av<br />

φ<br />

ωt<br />

Version 2 EE IIT, Kharagpur 16

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