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Characteristics: Triac - nptel

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The left hand side of Fig 4.3 shows the reverse i-v characteristics of the thyristor. Once the<br />

thyristor is ON the only way to turn it OFF is by bringing the thyristor current below holding<br />

current (I H ). The gate terminal has no control over the turn OFF process. In ac circuits with<br />

resistive load this happens automatically during negative zero crossing of the supply voltage.<br />

This is called “natural commutation” or “line commutation”. However, in dc circuits some<br />

arrangement has to be made to ensure this condition. This process is called “forced<br />

commutation.”<br />

During reverse blocking if i g = 0 then only reverse saturation current (I s ) flows until the reverse<br />

voltage reaches reverse break down voltage (V BRR ). At this point current starts rising sharply.<br />

Large reverse voltage and current generates excessive heat and destroys the device. If i g > 0<br />

during reverse bias condition the reverse saturation current rises as explained in the previous<br />

section. This can be avoided by removing the gate current while the thyristor is reverse biased.<br />

The static output i-v characteristics of a thyristor depends strongly on the junction temperature as<br />

shown in Fig 4.4.<br />

V BRF<br />

I A<br />

T j =<br />

150° 135° 25° 75° 125°<br />

25° 75° 125° 150° T j<br />

V AK<br />

T j = 125° 75° 25° 135° 150°<br />

Fig. 4.4: Effect of junction temperature (T j ) on the output<br />

i – v characteristics of a thyristor.<br />

4.4.2 Thyristor Gate <strong>Characteristics</strong><br />

The gate circuit of a thyristor behaves like a poor quality diode with high on state voltage drop<br />

and low reverse break down voltage. This characteristic usually is not unique even within the<br />

same family of devices and shows considerable variation from device to device. Therefore,<br />

manufacturer’s data sheet provides the upper and lower limit of this characteristic as shown in<br />

Fig 4.5.<br />

Version 2 EE IIT, Kharagpur 10

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