RHRP870, RHRP880, RHRP890, RHRP8100 - NewLibrary.RU

SEMICONDUCTOR
RHRP870, RHRP880,
RHRP890, RHRP8100
April 1995
8A, 700V - 1000V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .

Specifications RHRP870, RHRP880, RHRP890, RHRP8100
Electrical Specifications T C = +25 o C, Unless Otherwise Specified
RHRP870 RHRP880 RHRP890 RHRP8100 UNITS
SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
V F I F = 8A, T C = +25 o C - - 3.0 - - 3.0 - - 3.0 - - 3.0 V
I F = 8A, T C = +150 o C - - 2.5 - - 2.5 - - 2.5 - - 2.5 V
I R V R = 700V, T C = +25 o C - - 100 - - - - - - - - - µA
V R = 800V, T C = +25 o C - - - - - 100 - - - - - - µA
V R = 900V, T C = +25 o C - - - - - - - - 100 - - - µA
V R = 1000V, T C = +25 o C - - - - - - - - - - - 100 µA
I R V R = 700V, T C = +150 o C - - 500 - - - - - - - - - µA
V R = 800V, T C = +150 o C - - - - - 500 - - - - - - µA
V R = 900V, T C = +150 o C - - - - - - - - 500 - - - µA
V R = 1000V, T C = +150 o C - - - - - - - - - - - 500 µA
t RR I F = 1A, dI F /dt = 100A/µs - - 60 - - 60 - - 60 - - 60 ns
I F = 8A, dI F /dt = 100A/µs - - 65 - - 65 - - 65 - - 65 ns
t A I F = 8A, dI F /dt = 100A/µs - 38 - - 38 - - 38 - - 38 - ns
t B I F = 8A, dI F /dt = 100A/µs - 21 - - 21 - - 21 - - 21 - ns
Q RR I F = 8A, dI F /dt = 100A/µs - 130 - - 130 - - 130 - - 130 - nC
C J V R = 10V, I F = 0A - 30 - - 30 - - 30 - - 30 - pF
R θJC - - 2.0 - - 2.0 - - 2.0 - - 2.0 o C/W
DEFINITIONS
V F = Instantaneous forward voltage (pw = 300µs, D = 2%).
I R = Instantaneous reverse current.
t RR = Reverse recovery time (Figure 2), summation of t A + t B .
t A = Time to reach peak reverse current (See Figure 2).
t B = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 2).
R θJC = Thermal resistance junction to case.
E AVL = Controlled avalanche energy (See Figure 10 and Figure 11).
pw = pulse width.
D = duty cycle.
V 1 AMPLITUDE CONTROLS I F
+V 3
V 2 AMPLITUDE CONTROLS dI F /dt
R 1 Q
t
L 1 = SELF INDUCTANCE OF
1 5t A(MAX)
2
t 2 > t
R RR
4 + L LOOP
Q
t 3 > 0
1
L
+V 1 t A(MIN)
1 ≤
R 4 10
0
dI F
t
t
L LOOP
I RR
F
2 dt
t A
R
t 2
1 DUT
0
Q 4
t 3
C1
R 4
0
Q 3
-V 2
R
-V 4
3
V RM
t B
0.25 I RM
I RM
V R
FIGURE 1. t RR TEST CIRCUIT
FIGURE 2. t RR WAVEFORMS AND DEFINITIONS
7-59

Typical Performance Curves
RHRP870, RHRP880, RHRP890, RHRP8100
I F , FORWARD CURRENT (A)
40
10
1
+175 o C
+100 o C
+25 o C
I R , REVERSE CURRENT (µA)
500
100
10
1
0.1
0.01
+175 o C
+100 o C
+25 o C
0.5
0 0.5 1 1.5 2 2.5 3
3.5
4
0.001
0 200 400 600 800
1000
V F , FORWARD VOLTAGE (V)
V R , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
75
T C = +25 o C
125
T C = +100 o C
t, RECOVERY TIMES (ns)
60
45
30
15
t RR
t A
t B
t, RECOVERY TIMES (ns)
100
75
50
25
t RR
t B
t A
0
0.5
1
I F , FORWARD CURRENT (A)
4
8
0
0.5
1 4
I F , FORWARD CURRENT (A)
8
FIGURE 5. TYPICAL t RR , t A AND t B CURVES vs FORWARD
CURRENT AT +25 o C
FIGURE 6. TYPICAL t RR , t A AND t B CURVES vs FORWARD
CURRENT AT +100 o C
t, RECOVERY TIMES (ns)
200
160
120
80
40
0
0.5
t RR
t B
t A
1 4
I F , FORWARD CURRENT (A)
T C = +175 o C
8
I F(AV) , AVERAGE FORWARD CURRENT (A)
10
8
DC
6
SQ. WAVE
4
2
0
100 115 130 145 160 175
T C , CASE TEMPERATURE ( o C)
FIGURE 7. TYPICAL t RR , t A AND t B CURVES vs FORWARD
CURRENT AT +175 o C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
7-60

Typical Performance Curves (Continued)
RHRP870, RHRP880, RHRP890, RHRP8100
100
C J , JUNCTION CAPACITANCE (pF)
80
60
40
20
0 50 100 150 200
V R , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
I MAX = 1A
L = 40mH
R < 0.1Ω
E AVL = 1/2LI 2 [V AVL /(V AVL - V DD )]
Q1 AND Q2 ARE 1000V MOSFETS
R
Q1
L
130Ω
1MΩ
+
V AVL
12V
Q2
DUT
V DD
I L
130Ω
CURRENT
SENSE
-
I V
12V
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
t 0 t 1 t 2
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
7-61