Graphene S&T Roadmap - Ens

Graphene S&T Roadmap
A. Disruptive technologies and prospects for industry:
A1 Graphene properties
A2. Targets and expected impacts.
B. Research in graphene properties and search for new 2D materials
and hybrids.
B1. Fundamental research in graphene properties and novel G-based devices.
Correlations in multiple graphene layers
State of the art : Whereas monolayer graphene does not reveal phenomena due to strong
electronic correlations, electron-electron interactions become relevant in bilayer graphene
where novel phases are expected. The situation is expected to be similar in graphene layers
with (translational or rotational) stacking defaults.
Advantages and targeted specific applications : Apart from fundamental questions, a
deeper understanding is relevant for potential applications of graphene because of possible
band gaps induced by correlations that may compete with gaps in graphene nanostructures
due to their spatial confinement.
Outstanding issues, including modelling : The role of electronic correlations in graphene
systems is yet poorly understood and its understanding will thus be a major issue during the
next years. These electronelectron interactions lead to novel, yet unexplored phases, with
possible magnetic order or unusual topological properties due to an expected time reversal
symmetry breaking. The interplay between topology and interactions opens a new research
field in theory (advanced analytical and numerical techniques, such as DMFT extensions) and
experimental physics, where novel experimental techniques are required for probing these
phases (Kerrrotation measurements).
Quantum Hall Effect
State of the art : Graphene, which gives rises to an unusual quantum Hall effect (QHE), has
completely renewed our views on QHE, which were previously established on work done on
conventional 2D semiconducting heterostructures. Also the fractional QHE (FQHE) has
novel (multicomponent) features as compared to that in conventional 2D systems.
Advantages and targeted specific applications : The next decade will show both progress
in the knowledge of the mechanism limiting QHE and last but not least in its most direct
application: quantum resistance metrology. Anomalous QHE shows different quantization for
mono-, bi-, or tri-layer graphene. While the first two systems are well documented we may
expect more observation soon for the latter and probably more multilayers. A general trend is
also to intercalate a non-conductive layer, an h-BN layer for example or consider even more
complicated heterostructures leading to new quantum physical effects.
Outstanding issues, including modelling : The quality of the quantized Hall resistance
plateaux is the figure of merit for the QHE metrology. It relies on the amount, nature and
strength of disorder, in samples and substrates, which need to be better understood and
controlled. The investigation of interaction effects, leading to fractional quantization and
fractional carriers, is just at the beginning and will rise in the next few years using high
mobility graphene on hBN samples and requires novel theoretical tools such as
multicomponent exact diagonalisation. Because of the direct accessibility of graphene
electrons on the surface, FQHE states may now be probed by standard surface spectroscopic
Techniques that open a new way for the understanding of these correlated liquid states.
Finally, the experimental and theoretic study of collective excitations in high magnetic fields

(magnetoplasmons, magnetophonon resonance, excitons, ...), which are expected to be
different from standard 2D electron systems, remains an outstanding issue.
B2. Multiscale modelling of graphene-based structures and reverse
engineering of new 2D materials.
Quantum-chemical modeling, atomic and electronic structure
State of the art : The understanding of electronic and structural properties of graphene-based
compounds relies to great extent on realistic numerical modeling. The tools utilised range
from rapid interatomic potentials, many groups using parameterised tight binding models of
varying degrees of sophistication, and groups using density functional techniques. Several
groups move beyond static electronic structure calculations, using molecular dynamics
techniques (for example for studying graphene growth processes), phonon-coupling to
electronic states, and also developing new tools for studying time dependent electronic
behaviour in graphene.
Advantages and targeted specific applications : The numerical tools utilised in quantumchemical
modeling and advanced band-structure calculations allow for a detailed simulation
of realistic experimental situations and crystal growth (see section C).
including crystal growth, spectroscopic characterisation and electronic transport in the
presence of crystal defects, structure and electronic properties of nanoscale graphene systems
(edges) and particular graphene devices, graphene stackings, and phenomena out of
equilibrium.
Outstanding issues, including modelling : Numerical modeling requires the complex
inclusion of many parameters and is therefore often limited to small system sizes. During the
next decade, the permanently increasing computational power will allow for larger and more
complex modelling systems, approaching experimental reality (functionalised defects, defectedge
state coupling, non-uniform substrates, external electric and magnetic fields, …). Other
issues are the modeling of crystal growth on various substrates and the dynamics of defects
and impurities. Novel tools need to be developed for theoretical spectroscopy, such as
spatially resolved optical spectroscopy, x-ray core spectroscopy for defects. Using graphene
as a test system for these tools (e.g. defects in 1D and 2D materials). Further linking of ab
initio calculations to other tools such as transport modelling and Monte Carlo, refining tight
binding models. Beyond equilibrium, excited state calculations (notably excited state
structures, photoluminescence, …) are to be developed.
Engineering Dirac physics beyond graphene
State of the art : Pseudo-relativistic electrons (Dirac physics) are not limited to graphene and
may also be encountered in other systems, such as the layered organic material-(BEDT-
TTF) 2 I 3 , under pressure, topological insulators or specially prepared cold-atomic systems in
optical lattices. A particularity of these systems is the versatility in band engineering that
allows for different mergings and even annihilation of Dirac points, as well as gap openings,
that are not experimentally realisable in graphene.
Outstanding issues, including modelling : The modified band structure and Dirac-point
motion in condensed-matter systems beyond graphene require novel approaches to
understand their low-energy properties, such as low-temperature electronic transport.
Particularly important is the study of experimentally relevant situations and measurable
quantities for these merging transitions and the breakdown of the original pseudo-relativistic
behaviour. Another issue is the understanding of the role of interactions at the saddle points
between Dirac points as well as generally in -(BEDT-TTF) 2 I 3 that reveals strong electronic
correlations even when the Dirac points are well separated, in contrast to graphene. Such

studies require, beyond analytical investigations, involved numerical studies such as DMFT
(and cluster extensions) or LDA calculations. From an experimental point of view, the
investigation of Dirac physics in -(BEDT-TTF) 2 I 3 at high pressure is involved and requires
progress in high-pressure transport and spectroscopy. Furthermore, the experimental and
theoretical understanding of the interplay between topology and strong electronic correlations
in topological insulators remains an outstanding issue. An open question is to what extent
mono- and bilayer graphene may be turned into a topological insulator, e.g. by enhancing the
spin-orbit coupling via additional atoms and chemical functionalisation.
B3. Fundamental research in graphene derivatives and 2D atomic crystals.
B4. Research in hetero- and hybrid structures of graphene and 2D materials.
State of the art : As soon as graphenes are piled up in limited number (from 1 to ~10), the
related few-graphene-crystals (FGCs) thus formed are able to exhibit physical properties
different from that of pristine graphite. Graphene and FGCs are promising materials for
applications such as the next generation of nanoelectronic devices for communications and
computers, components for batteries and solar cells for energy storage and production,
composites for aeronautics (environment, energy, structural composites…) and others among
which some are certainly yet to discover. Thanks to the intense research activity that has
taken place worldwide since 2004 to tentatively explain all the aspects of graphene- and
FGC-related physical properties and behaviors, several drawbacks and limitations have been
revealed which need to be overcome in view of the aforementioned applications. The main
drawback limiting the potential use of graphene stems from its intrinsic characteristics: a
semiconductor with zero gap, almost inert towards controlled chemisorption and doping. One
of the main challenges is to functionalize the graphene layer while preserving its fascinating
physical properties.
Advantages and targeted specific applications : One way to reach this goal is to consider
Graphene Based Hybrid structures (GBHSs), i.e., the combination of graphenes or FGCs
with foreign components (atoms, molecules, functional groups, clusters, nanocrystals) by the
various possible means (substitution, physisorption, functionalization, and intercalation).
Graphene Based Hybrid Structure becomes to be a new research field which bring together a
multidisciplinary community (material scientists, surface science physicists, chemists,
physical chemists of soft matter and theoretical chemists in the field of surface chemistry) to
explore the various possibilities to realize a realistic structure, in order to study the expected
properties and behaviors, and allow the integration of the resulting materials into functional
devices and materials.
Different ways of functionalization have been opened. Deposition of metal clusters or
molecules on top of graphene (doping, inducing superconductivity, supramolecular magnet
for spintronic,..). It is also possible to intercalate metal clusters or molecules between the
substrate and graphene which opens the possibility to functionalize the graphene layer on
both sides. The functionalization could be done also by chemical function.
Outstanding issues :
1-Intercalation and realization of Sandwiched Graphene structures:
The possibilities of modification of the band structure by intercalation meet the historical
research community of the “graphite intercalation compounds” (GICs). The most famous
application of GICs is the energy storage with the Li-ion battery. The research in GICs
material has been considerably intensified after the discovery of high Tc superconductivity
for the GIC CaC 6 [T. Weller et al Nat. Phys. 1 39 (2005), N. Emery et al PRL 95, 087003

(2005), Sci. Technol. Adv. Mater. 9, 044102 (2008)]. Despite this intense activity, it is still not
yet clear if the superconductivity is due to the nature of the intercalant or the graphene itself.
For the graphene, we report two families of materials, one is graphene grown on metallic
substrate and the other is graphene on silicon carbide (G/SiC). Many groups are active in this
research field, on metallic substrates [J. Coraux et al for G/Co/Ir(111) Submitted, M. Sicot et
al APL 96 (2010) 093115] towards the realization of electrode for spintronic applications and
the possibilities to induced spin-orbit coupling for example Rashba effect [A. Varykhalov et
al Phys. Rev. Lett. 101, 157601 (2008)].
G/SiC is particularly suitable for future electronics and the control of the number of graphene
sheets. Following the GiCs community the studies of intercalation of metals atoms in the
G/SiC system already started showing the possibility to modify the band structures of
graphene with the homogeneous intercalation of alkali metals associated to a strong doping
[Boswick et al Science 328 (2010) 999, APL 98 (2011) 184102] or several other phases of
intercalation with gold atoms [B. Premlal et al APL 94 (2009) 263115, Cranney et al EPL 91
(2010) 66004, Nair et al Submitted].
The comparison of GICs and Intercalated Graphene open several intriguing questions. What
is the role of the intercalant, the charge transfer to the graphene layer and the modification of
the graphene band structure particularly at the Van Hove singularities (VHs) (Resulting
electron-phonon coupling and all other possible bosonic phases involved near the VHs)? The
effects of commensurability and types of intercalation (homogeneous surstructure) consist of
important fundamental questions with targeted properties as the increase of Tc. In view of
this important targeted application this approach could be associated to the decoration of the
graphene with other compounds in a sandwich hybrid structure. As an example it has been
demonstrated that graphene sheets could be decorated with a nonpercolating network of
nanoscale tin clusters using superconductive metals. This new concept allows inducing via
proximity effect a gate-tunable superconductive transition [B. M. Kessler et al Phys. Rev.
Lett. 104, 047001 (2010)].
2- Functionalization of graphene by chemical functions and (or) molecules and atoms
substitution.
The chemical functionalization could be done by a chemical function on the graphene. This
involves Graphene Oxide (GO) and the research of new strategies to create other reactive
dangling bonds directly on the graphene plane and several methods which consist in
saturating dangling bonds for Graphene plane edges or Graphene Nanoribbon [see for
example J. M. Mativetsky et al J. Am. Chem. Soc. 133 (2011) 14320]. Graphene and
particularly GO is also attracting for potential applications in the fields of biomedicine, for
the development of new biosensors, for imaging, for tissue engineering, for drug delivery and
as antibacterial. The main draw back here is the definition and the realization of a standard
which can be provided by Graphene Based Hybrid structure community. Here another
important approach is to induce magnetism property of graphene by chemical
functionalization. Theoretical studies predicted that defective graphene could be
semiconductive and magnetic. It has been shown the possibility to induce a mixture of
disordered magnetism regions (ferro, superparamgnetic and antiferromgnetism) on epitaxial
graphene using nitrophenyl functionalization. Here the targeted feature is to induce longrange
ferromagnetic order by controlling the chemisorbed sites for spintronic applications
[Jeongmin et al small 9 (2011)1175]. These manipulated graphene (intercalated G or
structured epitaxial G with moiré pattern for example) could be used as substrate for the
deposition and organization of supramolecular layer and (or) enhance the local reactivity by
inducing a curvature in the graphene plane. Molecules are used either simply for the doping

[see for example P. Coletti et al Phys. Rev. B 81 (2010), Wei Chen et al JACS 2007, 129
(34), 10418] or to use the graphene itself as substrate for the self-organization of
supramolecular layer or simple molecules [Yi-lin Wang et al Phys. Rev. B 82 (2010) 245420,
Han Huang et al ACS Nano, 2009, 3 (11), pp 3431–3436] and (or) using Moiré pattern for
example in the case of G/Ru(0001) [Jinhai Mao et al J. Am. Chem. Soc., 2009, 131 (40),
14136, M. Roos et al Beilstein J. Nanotechnol. 2 (2011)365].
The already identified targeted applications are optoelectronic and photovoltaic
devices using graphene as transparent and conducting substrate [S. Bae et al Nature
Nanotech. 5 (2010) 574, J. Wu et al ACS Nano, 4 (2010) 43, A. Liscio et al J. of Mat. Chem.
21 (2011) 2924]. The outstanding issue is to understand the electronic interaction between the
molecule and graphene and the subtle balance between molecule-molecule and moleculesubstrate
interaction for the realization of supramolecular network.
An important demonstration of the possibility to functionalize graphene with individual
molecule is the recent realization of a prototype of molecular spin valve device made by
decorating a graphene nanoconstruction with TbPc2 magnetic molecules [A. Candini et al
Nano Lett. 11 (2011) 2634, Bellini et al Phys. Rev. Lett. 106 (2011) 227205]. These
experiments open a wide research field and several intriguing questions which concern
specifically the spintronic. Here the choice of the substrate and of the spin state of the
deposited molecule make hybrid carbon based – molecular architectures; a flexible platform
to design novel spintronic devices. Outstanding issue could be to design and fabricate
molecular spin valves in the vertical geometry made by graphene sandwiched between a
magnetic substrate and a magnetic molecule. Another possibility is to investigate -at higher
temperatures- the spin split of the energy band induced by magnetic molecules deposited on
top of graphene.
3- Dirac point engineering
The possibilities of this multidisciplinary approach allow us to plan and propose concrete
solutions for the realization of specific structures with properties theoretically predicted by
manipulating the Dirac equation. For example the creation of new Dirac point at different
points of the Brillouin zone of graphene with the hopping potential of the quasiparticles
[Bena et al Phys. Rev. B 83 (2011) 115404], the realization of a new Tau3 lattice based on
graphene which provides an additional dispersionless energy band and an enlarged pseudospin
[D. Bercioux et al Phys. Rev. A 80 (2009) 063603] or the possibilities to tailor the spinorbit
interaction in graphene [D. Bercioux et al Phys. Rev. B 81 (2010) 165410].
The gapless edges states are protected from elastic backscattering and localization by time
reversal symmetry. Theoretically it has been demonstrated that the functionalization of
graphene plane by periodic heavy adatom deposition could also increase the robustness of
spin dependent edges states and combined with the spin filtering nature could find application
in spintronic [C. Weeks et al arXiv:1104.3282v2] or the realization on/off current switching
with graphene nanoribbon with the substitution of carbon atoms at specific edges states [B.
Biel et al Nano Lett. 9 (2009) 2725, Phys. Rev. Lett. 102 (2009) 096803].
4- In situ characterization methods
Graphene hybrids will require advanced characterization, which should involve both high
spatial and/or point resolutions and coupling ? preferentially in-situ, as it will limit the
contact with air, will prevent contamination, and will allow investigating the dynamics of the
phenomena - between several methods. Two kinds of in-situ coupling are worth being
considered:
(i) coupling several characterization methods to investigate a single object, for instance
HRTEM + Raman spectroscopy + electrical measurement, in order to accurately correlate the

structural features and the physical behavior.
(ii) coupling one or several characterization methods (e.g., HR-TEM imaging and electrical
measurement) with one or several treatment methods (e.g., mechanical and/or thermal
stresses) in order to correlate the variation of the behaviors with that of the structure changes.
Considering in-TEM experiments, the above will be typically allowed by using sample
holders equipped with various facilities (e.g., able to apply thermal or mechanical stresses to
the specimen) which are already available, but other sample holders allowing a larger panel
of stresses to be applied, or allowing several stresses to be applied in the same time are
currently being built. When the in-situ coupling is technically difficult (e.g., coupling TEM
and UV-Raman, which cannot be done through an optical fiber, or coupling TEM and high
magnetic field inducer), the chip-based sample holder technology will be highly preferred as
it will allow the chip to be transferred from a characterization method to another, each of
them being equipped with the appropriate sample holder bearing the same in-situ treatment
methods. This will allow the various investigations to be carried out on the same hybrid
graphene specimen under the same condition trend.
The chemical functionalization of graphene with reactive molecules and with the deposition
of supramolecular assemblies requires studying the self-organization process and the
molecule/Graphene interface in several conditions: At the liquid-solid interface, by wettingdewetting
processes but also in connection with ultra-high vacuum conditions. This is already
possible with UHV systems in different French laboratories where we can combine several
sources of molecule deposition (sublimation, liquid-valve injection), with surfaces
characterization techniques such as Scanning Tunneling Microscopy and X-ray and UV
Photoelectron Spectroscopy Techniques. Several kinds of Scanning Tunneling Microscopy
techniques are currently used; low temperature STS, Spin-polarized STM and Fourier-
Transform Scanning Tunneling Spectroscopy which can allow a local dispersion and surface
Fermi measurement. The synchrotron sources (ESRF, Soleil) become to be widely used for
graphene researches, for high resolution ARPES measurements, XMCD and also spinpolarized
low-energy electron microscopy particularly useful for the ferromagnet /graphene
interfaces.
Proximity induced superconductivity in graphene
State of the art : The fabrication of Superconductor/ Graphene (SG) hybrid systems, such as
SGS junctions or an SG interfaces, opens the possibility to investigate the relativistic nature
of Dirac fermions combined with superconductivity. We need for a better knowledge of this
regime and there is a hope that new functionalities using SG hybrid systems will emerge for
fundamental or applied exploitation.
Outstanding issues, including modelling : A key issue is the vanishing of the supercurrent
at the neutrality point, where most peculiar effects of graphene are expected. It points to the
role of puddles along which Andreev pairs undergo specular reflections. We expect
progresses in graphene and substrate qualities to solve this issue. Conversely, mesoscopic
superconductivity can be viewed and used as very sensitive test of graphene quality. Other
routes are : a) to exploit recent progresses in high critical magnetic field electrodes, to inject
Cooper pairs in the edge states of graphene QHE. Here fascinating effects are expected to
occur; b) the decoration of graphene by an array of superconducting particles which
constitutes an ideal and versatile model system for the investigation of the long debated
superconductor insulator transition and a new source of superconducting FETs; c) to
combine proximity superconductivity and suspended graphene to extremely high-Q
mechanical vibration modes, eventually controlled by the ac Josephson effect.

B5. Atomic scale technology in graphene.
State of the art. The design of electronic and optical properties in graphene can be achieved
by the lateral confinement of the 2D electron gas from the mesoscopic regime down to the
molecular scale. Very early on, the peculiar behaviour of graphene nanoribbons or hole arrays
in graphene have attracted the attention of theoreticians [K. Nakada, et al., Phys. Rev. B 54,
17954 (1996), K. Wakabayashi and T. Aoki, Int. J. of Mod. Phys. B 16, 4897 (2002)] who
proposed to exploit this confinement, typically below 100 Ǻ, to introduce an energy gap in
the semi-metallic graphene or to induce itinerant ferromagnetism. Such systems have been
revisited by current numerical simulation tools with promising predictions [S. Lakshmi, et al.,
Phys. Rev. B 80 (2009); J. M. Poumirol, et al., Phys. Rev. B 82 (2010); S. Roche, Nature
Nanotech. 6, 8 (2011); V. H. Nguyen, et al., J. App. Phys. 106 (2009); V. H. Nguyen et al.,
APL 99 (2011),….] As soon as graphene monolayer has been made accessible, the properties
of graphene nanoribbons (GNR) have been investigated experimentally. The dominant
approach consists in using inorganic resist to lithographically define nanoribbons with width
reaching 150 Ǻ by ion etching [M. Y. Han et al., PRL 98 (2007), P. Avouris, Nano Letters 10,
4285 (2010), C. Stampfer et al., PRL 102 (2009); S. Droscher, et al., Phys. Rev. B 84 (2011)].
A resist-free alternative was proposed by focused ion beam [J. F. Dayen, et al., Small 4, 716
(2008); M. C. Lemme, et al., ACSNano 3, 2674 (2009)].However, it appeared that the
transport in ion-etched ribbons is strongly dominated by edge disorder and amorphization [J.
F. Dayen, et al., Small 4, 716 (2008), F. Molitor, et al., Semicond. Sci. Tech. 25 (2010), M. Y.
Han et al., PRL 104 (2010)], which called for alternative approach to graphene patterning at
small scales. Ultrasonically shredded graphene [X. L. Li, et al., Science 319, 1229 (2008)],
carbon nanotube opening [D. V. Kosynkin, et al., Nature 458, 872 (2009); L. Y. Jiao, et al.,
Nature 458, 877 (2009)], AFM and STM tip-induced oxidation [A. J. M. Giesbers, et al., Sol.
St. Comm. 147, 366 (2008); L. Tapaszto, et al., Nature Nanotechnology 3, 397 (2008)] and
catalytic particle cutting [S. S. Datta, et al., Nano Letters 8, 1912 (2008); L. J. Ci, et al., Adv.
Mater. 2, 4487 (2009); L. C. Campos, et al., Nano Letters 9, 2600 (2009)] are offering
promising routes to 50-500 Ǻ wide ribbons, but only the former has so far led to functional
devices. This has led to energy gap large enough to produce GNR transistors with large I ON -
I OFF ratio, including at room temperature, with the extra asset that all ribbons are found to ne
semi-conducting, in contrast to nanotube devices. [X. R. Wang, et al., PRL 100 (2008)]
Interestingly, transport measurements in shredded ribbons has shown that scattering by
substrate potential fluctuations dominates the edge disorder.[J. M. Poumirol, et al., PR B 82
(2010)] However, the only approach that has so far demonstrated the ability of producing
GNR with high crystallinity and smooth edge are based on electron beam etching of
graphene, primarily at high energy (80-300 kV) in transmission electron micrographs. [C. O.
Girit, et al., Science 323, 1705 (2009) X. T. Jia, et al., Science 323, 1701 (2009), B. Song, et
al., Nano Letters 11, 2247 (2011)] Morever, aberration-corrected HRTEM is, to date, the most
appropriate technique to characterize nanoribbons in the sub-100 Ǻ width regime. Finally,
one should mentioned that tremendous progress in bottom-up approaches to the chemical
synthesis of graphene nanoribbons and molecular graphene structure has been reported in the
past few year, reaching object sizes close to 100 Ǻ. [J. M. Englert, et al., Angewandte
Chemie-International Edition 50, A17 (2011), J. M. Cai, et al., Nature 466, 470 (2010), G.
Franc et al., PhysChem. ChemPhys. 13, 14283 (2011)] This makes it possible to envision a
functional bridge between traditional top-down patterning and atomically-precise chemical
design.
Advantages and targeted specific applications. While the one-atom thickness of graphene
has already been largely exploited in most graphene studies so far, in electronic transport and
optical transparency experiments and applications, the lateral confinement of graphene offers

a unique opportunity to bridge mesoscopic and molecular-scale physics in a single continuous
material, which has already been modelled extensively at both extreme length-scales.
Outstanding electronic and optical (plasmonic) applications are foreseen but highly
crystalline graphene and atomic scale precision of structure edges are required. If reached,
graphene could be a revolutionary material to integrate electronic and optical properties down
to the atomic scale. Graphene-based atomic-scale technology, in particular for suspended
graphene or graphene on specific substrates such as BN, would obviate many of the current
drawbacks of other known approaches based on surface states of semiconductors (MoS 2 , SiH,
Ge). While the study of GNR devices and the optimization of their performances will
contribute much to the development of a graphene-based nanoelectronics (See Sections D1
and D2) but also THz plasmonics, progress made towards atomic-scale technology, would
make of graphene an unrivalled platform for non-CMOS approaches to Boolean information
processing, by inspiration of monomolecular electronics paradigms.[C. Joachim et al., Adv.
Mater. 2012, 24, 312–317]
Outstanding issues, including modelling: The resulting challenges can be split into three
categories. First, GNR and larger GNR-based architectures require the development of
atomic-scale fabrication techniques that are rapid enough to bridge the gap with standard
nanofabricated features. A promising strategy should probably exploit electron and/or
scanning probe microscopy techniques. A challenging objective is to investigate the
suspended vs supported cases and, in the latter case, to define the most suitable atomically
flat substrate. However, chemical approaches should also be considered either from the
molecular synthetic or colloidal etching viewpoint. Next, atomic-scale imaging of supported
and suspended graphene, such as STM, non-contact AFM, aberration-corrected HRTEM,
should be developed in the specific realm of atomic-scale graphene devices. Obviously,
electron transport, optical measurements and local, near-field measurements should be
pushed to the limits to assess the properties in atomic-scale devices and to identify the
degrees of freedom able to control graphene behaviour, such as magnetic field, gate effects,
optical excitations, near-field coupling to metallic surfaces, etc… These experimental issues
should be guided by more a realistic theoretical description and simulations, in particular
regarding the bridging between atomic / molecular scale and the mesoscopic regime. Finally,
transport measurement may suggest new ways to implement Boolean logic into designed,
atomically-defined graphene nanostructures. Therefore, a very demanding challenge is the
design of post-CMOS logic architectures that would be compatible with an implementation in
atomic-scale graphene devices.
C. Production technologies of graphene and control over properties.
C1. CVD growth on metals in vacuum, atmospheric and high pressure.
State of the art : Controlling the synthesis of graphene of good crystalline quality and its
transfer onto an arbitrary substrate is a major stake in graphene research [S. Bae et al. Nature
Nanotech. 5, 574 (2010)]. Among emerging methods, chemical vapor deposition (CVD) at
low or ambient pressure on metals, especially on Cu foils, is an outstanding one, as it meets
the two requirements of large-size graphene deposition and easy transfer onto arbitrary
substrates [X. Li et al. Science 324, 5932 (2009)]. Graphene grows on metals continuously
across the metal grain boundaries [K. S. Kim et al. Nature 457, 706 (2009)] and step edges
[H. Rasool et al. Nano Lett. 11, 251 (2011)] in the form of islands which eventually coalesce
to form a continuous graphene layer. The nucleation [Q. Yu et al. Nature Mater. 10, 443
(2011)] and density [X. Li et al. J. Am. Chem. Soc. 133, 2816 (2011)] of the graphene islands
have been better and better controlled in the last few years, which allowed to substantially

decrease the defects densities in graphene on Cu. Compared to exfoliated graphene, graphene
prepared by CVD always exhibits lower charge carrier mobilities, which can be ascribed to
both its polycrystalline nature and defects induced by the transfer process. Assessing the
mobilities in graphene allows benchmarking its relevance in the view of transport
measurements and applications. To the exception of very high values reaching almost 20 000
cm 2 V -1 s -1 reported by one group [X. Li et al. Nano Lett. 10, 4328 (2010)], mobilities in CVDderived
graphene are at best a few 1 000 cm 2 V -1 s -1 [X. Liang et al. ACS Nano, ASAP].
Ultra-high vacuum (UHV) CVD is usually employed to prepare graphene of a very high
structural quality. Single-orientation, single-layer graphene of centimeter scale extension was
reported on Ir(111) [J. Coraux et al., Nano Lett. 8, 565 (2008)] and Ru(0001) [P. W. Sutter et
al. Nature Mater. 7, 406 (2008)]. Subtle understanding of the growth processes was achieved
[E. Loginova et al. New J. Phys. 10, 093026 (2008)]. More recently, a novel low-temperature
growth mechanism, involving surface carbides as a transient state during graphene growth,
was reported on Ni(111) [J. Lahiri et al. Nano Lett. 11, 518 (2011)].
Advantages and targeted specific applications : In many applications like in photovoltaics,
transparent electrodes, or the batch production of large sets of devices [Y.-M. Lin et al.
Science 327, 662 (2010); A. Avsar et al. Nano Lett. 11, 2363 (2011)], large-area graphene,
typically above 100 cm 2 , is mandatory. In contrast to chemical routes, which hold potential
for high throughput production of low-cost graphene, low/ambient pressure CVD can yield
graphene whose quality make it suitable for already a large number of the above-mentioned
applications. UHV CVD is most often employed for the purpose of surface science
investigations – where ultra-high quality samples are needed – of the graphene/metal
interaction and in the view of understanding the elementary processes during graphene
growth on metals, and discovering new such processes liable to allow for a better control of
the graphene structural properties (quality, extension, number of layers, stacking order).
Outstanding issues : Further improving the quality of CVD-derived graphene up to the point
it becomes suitable for charge carrier transport with mean free paths of several 100 nm and
mobilities of the order of 10 000 cm 2 V -1 s -1 , opens tantalizing prospects. Such characteristics
in graphene obtained by such a facile preparation method as CVD on metals followed by
transfer, opens tantalizing prospects in terms of mesoscopic physics, including spin and
charge carrier transport, and metrology. This will require a better control over the nature and
density of defects in graphene and over the transfer of graphene. This effort should be
associated to a multi-scale extensive computational exploration of the growth of graphene by
CVD and its structure. Such an exploration is liable to bridge the gaps between static first
principle calculations of a few-100 atoms structures, dynamical Monte Carlo and molecular
dynamics calculations of the growth and structure. The knowledge acquired with graphene is
then liable to benefit to the study of the other kinds of lamelar two-dimensional materials also
holding strong promise and whose investigation only started recently. Another issue, of high
relevance for applications, concerns the definition of standards for characterizing the nature
and quality of graphene. This will require thorough cross-characterizations and the definition
of measurement and growth standard procedure. Such an effort is mandatory for allowing
industrials to design novel graphene-based applications.
In situ characterisation methods (existing / new required): Methods which have been
employed in Europe for characterizing graphene in situ during its growth include electron
microscopy, X-ray diffraction (synchrotron source), and scanning tunneling microscopy.
These methods allowed rapid progresses in understanding and controlling graphene growth
on metals. It is foreseen that efforts in further developing existing in situ characterization

methods, and developing new such methods, will considerably speed up the investigation of
graphene and other two-dimensional materials/hybrids. Among these new methods, advanced
ones, like in situ Raman spectroscopic monitoring of the growth, or more versatile ones to be
implemented directly in CVD reactors, for instance reflectometric set-ups, appear promising.
C2. CVD and MBE of graphene on insulators; CVD/PECVD deposition of
functional coatings on substrates – transparent supports, etc
State of the art : Efforts were initiated in attempting the growth of large-area graphene by
carbon deposition on a variety of substrates. The purpose is at the meantime to avoid the
polluting transfer step from a metal to a better suitable substrate, and to reduce the thermal
cost of CVD growth or graphitization of SiC surfaces. CVD and molecular beam epitaxy
(MBE) were first attempted on SiC substrates [E. Moreau et al. Appl. Phys. Lett. 97, 241907
(2009) – A. Al-Temimy et al. Appl. Phys. Lett. 95, 231907 (2009) – A. Michon et al. Appl.
Phys. Lett. 97, 171909 (2010)]. Good control of the graphene-SiC epitaxy was demonstrated
with these approaches. CVD was also conducted on other kinds of non conductive substrates,
such as MgO [M. H. Rümelli et al. ACS Nano 4, 4206 (2010)], at low temperature, or mica
[G. Lippert et al., Phys. Stat. Sol. B 248, 2619 (2011)]. The quality of graphene in the two
latter cases remains limited.
Advantages and targeted specific applications : Direct growth of graphene directly on nonmetallic
substrates opens the route to a number of fundamental investigations and
applications. A gatable non conductive support is obviously of interest for transport studies.
Transparent substrates allow optical studies, especially in the transmission mode.
Piezoelectric substrates would be enable the design of micromechanical devices where to
explore the effects of strain in supported graphene.
Outstanding issues : One of the most challenging issues in graphene growth on insulators is
to reach the structural quality of graphene obtained by SiC graphitization or CVD on metals.
Once this will be demonstrated, the next step could consist in building up, by direct growth,
complex heterostructures combining graphene, other two-dimensional materials, and
insulating layers and substrates. This would open the route to the design of novel
functionalities, and the potentialities in this direction are only limited by the degree of control
which will be achieved by direct growth.
In situ characterisation methods (existing / new required): Maybe even more than for
CVD growth on metals, the in situ characterization of the growth of graphene on insulators is
necessary for rapid progresses. The field is largely unexplored and important steps-forward
are accordingly expected. Optical method should probably me preferred here, due to the
insulating substrate which will prevent the use of techniques requiring the evacuation of
charge carriers (scanning tunneling microscopy, electron microscopy). For this reason, in
operando Raman spectroscopy and reflectometry appear ideal tools.
C3. Graphitization of SiC.
State of the art : Graphene grown on SiC by thermal annealing is particularly interesting for
fundamental studies as well as for wafer-scale electronic applications. The epitaxial graphene
structure and properties on the polar SiC material are face-dependent. On the Si face, large
area homogeneous films are grown, but the graphene-substrate electronic coupling limits the
electron mobility. Post-growth hydrogenation reduces this coupling. On the other C side, a
particular structure with a stacking of rotationally-disordered layers is obtained. The intrinsic
monolayer graphene valuable properties are almost preserved for multilayer graphene and
high electron mobilities have been measured, although with a lack of control of the growth at

low thickness. A full understanding of the graphene on SiC electronic properties is still
missing, despite the numerous ARPES, STM and mesoscopic transport experimental studies
and simulation/modelling works.
Advantages and targeted specific applications: The main field of applications of graphene
on SiC substrates stands into high frequency nano-devices, for which the best performances
were shown (compared to other growth techniques). Some niche developments may also
appear (e.g. sensors). The cost of the substrates and the compatibility with Si technology
seems to restrain any commercial use for now, but this situation may change in the future.
Nevertheless, this system may be used as a demonstrator of its potentialities. Direct growth of
graphene, on SiC thin films or other substrates, may then follow for such applications, as it
allows to circumvent the present disadvantages of SiC.
Outstanding issues, including modelling: One first restriction which needs to be solved and
is directly related to the growth of graphene on SiC comes from the difficulty to use the best
material (rotated multilayers) in terms of electronic mobility for electronic device
applications. Because of the actual costs and size limitation of SiC substrates, achieving the
growth of high-quality graphene on SiC deposited on other substrates (Si and other ‘low-cost’
substrates) is another critical issue.
In situ characterisation methods (existing / new required): Standard surface
characterization techniques such as electron diffraction, Auger spectroscopy and X-ray
photoemission spectroscopy are routinely applied. The determination of the grain size and of
the stacking is commonly achieved by scanning tunneling microscopy. However, it is now
clear that Low Energy Electron Microscopy (LEEM) is an efficient technique to gather all
these information at once, and open access to such instrument is lacking.
C5. Synthesis of graphene and its derivatives from molecular precursors.
C6. Chemical exfoliation from bulk graphite and directly into graphene
graphene or via graphene oxide; graphene derivatives.
Intercalation and exfoliation for the production of Graphene:
Outstanding issues: Beyond the physics of intercalated compound, it appears that the
mechanism of intercalation remains not well understood. There are several issues for the
understanding of intercalation mechanism for example the problems linked to the life
duration of Lion-ion battery. The role of the solvent and the research of novel strategies for
the intercalation process is also an important issue particularly for the production of large
quantities of liquid formulation of graphene. Some graphitic intercalation compounds (GICs)
have been shown to be spontaneously soluble in polar solvents without the need of any kind
of additional energy, such as sonication or high shear mixing [Solutions of graphene, C.
Vallés and A. Pénicaud patent WO 2009/087287; FR 07/05803 (2007), C. Vallés et al JACS,
130 (2008) 15802, A. Catheline et al, Chem. Com. 47 (2011) 5470]. These research activities
are in strong connection with the research of other methods of large scale production of
graphene using mechanical thinning which has lead to the creation of a start-up [I. Janowsca
LMSPC, Méthodes de preparation de graphene par amincissement mécanique de matériaux
graphitique patent PCT/FR2010/000730 ].
MORE COMPLETE VERSION UNDER PROGRESS
C7. Search for other methods: anodic bonding, laser ablation, etc

State of the art : Anodic bonding is a much employed technique in the silicon industry and
widely used for bonding glass to conductive material owing to the good bond quality (silicon
on insulator bonding or SOI bonding). It allows the joining of two solids without intervening
layers such as glue and is typically performed between a alkali-ion bearing glass substrate
and a silicon wafer at moderate temperatures (200°C) and fields (~kV). This technique has
been used to bond precursor crystals of layered materials to glass and then cleave away the
precursor to leave single or few layer samples on the glass substrate and has been shown to
be a reliable and high throughput method for the production of two dimensional materials.
For graphene we readily obtain flakes of a few hundred micrometer size of high quality. Two
dimensional crystals of many other layered materials have been prepared, such as insulators
(mica) semiconductors (MoS2) and superconductors (NbSe2, BSCCO).
Issues : This technique can be seen as an easier and efficient variant of exfoliation for
producing high quality samples for research and for some applications. Samples thus made
can be easily transferred to other substrates with standard (wedge) techniques. This provides
a way for producing hybrid devices of these crystals (BN+graphene for example) and also for
rapid production of a host of 2D samples for fundamental research.
C8. Manipulation of graphene.
D. Functional graphene and graphene-based devices.
D1. Graphene-based microelectronics and nanoelectronics (analog).
High Frequency transistors
State of the art (SOA): Modern society relies on advances in wireless communications
including ground and space infrastructures. This application requires radiofrequency
transistors that are able to amplify signals and provide electronic gain at high frequency. The
available frequency bands become saturated and customers require higher download/upload
capacities. These two constraints imply the use of higher frequency bands. Unfortunately,
transistor performances degrade with increasing frequency. Thus, there is an intense research
work on high frequency devices made of high performance semiconductors. High frequency
transistors are also used in radar systems for civil (automotive applications, air traffic
surveillance) and military applications. It includes the mm-wave integrated circuits and
imaging/radar Sensors.
Advantages: Graphene, a single layer of sp2 bonded carbon, has a set of extreme properties
which derive from its low dimensionality and its linear band structure at the Fermi level,
including extremely high carrier mobility, over 200.000 cm 2 /V.s at room temperature, a high
ballistic mean free path, and a large thermal conductivity. Major chipmakers are active in
graphene research and the latest ITRS roadmap strongly recommends intensified research
into graphene and includes a research/development schedule. Radiofrequency circuits are
much less complex than digital logic chips and generally tolerate low ON/OFF ratio.
Graphene devices are particularly attractive for this application because of the extremely high
carrier mobility but also because of its ultimate atomic thickness. These specific properties
open up the possibility of scaling devices to shorter channel lengths and higher speeds
without encountering the adverse short-channel effects that restricts the performance of
existing devices.
Graphene MOSFETs already outperform the fastest Si MOSFETs with comparable gate
length and aggressively attack the GaAs pHEMTs. IBM has demonstrated a cut-off frequency
of 155 GHz, using CVD graphene transferred on diamond-like carbon, and 240 GHz using

SiC graphene. These results highlight two points: First, very high quality graphene can be
obtained by CVD or SiC graphitization; Second, the choice of the substrate is extremely
important to get high carrier mobilities and to fabricate devices with high cut-off frequencies.
Today graphene devices exhibit highly promising performances, but their use in the radiofrequency
industry is limited mainly by three factors: the availability of high quality graphene
films on large substrates, the substrate-limited carrier mobility, and the contact resistance
which limits the power gain (fmax) at high frequency.
The French community previously involved in carbon nanotube physics and devices, where it
has established a SOA transit frequency of 80GHz. The community is still growing, well
established and interacts strongly, particularly through collaborative National (ANR) and EU
programmes. Domestic efforts go into three main directions: increase operating frequencies
to make the bridge with THz optics, produce flexible devices operating in the multi-GHz
band, and realize nanoscale devices to be used as ultrafast charge sensors for basic physics
(monitoring elementary charge transfers in conductors or electrochemical processes), the
readout of charge qubits and more generally of quantum information devices.
Outstanding issues: the engineering of the graphene-substrate coupling is a key-point, both
in terms of carrier mobility and thermal conductivity. Beyond the standard techniques
developed so far to fabricate graphene sheets and report them on an insulating substrate
(exfoliation, SiC sublimation, CVD on metal), the community develops strong efforts in
growing and providing h-BN layers/substrate on which the intrinsic transport properties of
graphene are preserved. This is a primary resource requirement. Additionally, the engineering
of graphene/BN multilayers will offer a new degree of freedom and new opportunities to
design high-performance devices. Undoubtedly, this research will project graphene
electronics into the THz regime. Ultimately, a key challenge is to move towards ballistic
devices in intrinsic graphene to access Dirac point physics and take full advantage of the
chiral character of massless Dirac fermions.
Material issues: Other low-cost methods of graphene production (e.g. low-temperature
PECVD and spray deposition of exfoliated graphene) have been identified as important ways
to be explored and developed. A good example is "flexible electronics" on plastic-like
substrate, which was identified as a key area for HF graphene electronics, with the potential
to outperform all previous demonstrations in organic electronics. Another very promising
way of engineering graphene is the chemical way. A good example is the formation of
porphyrine networks on graphene using polymerisation. It offers a new degree of freedom
which makes it possible to modulate the bandgap, the doping, the optical and magnetic
properties of graphene.
Modelling: To scale-up the unique HF properties of graphene to the macroscopic/circuit
level, and go beyond the demonstration of proofs of concept, a crucial issue is the
development of suitable technologies. Hence, an effort will be done in the next years to
demonstrate functional circuits with appropriate architectures. Finally, the computational
capabilities have been identified has an important tool towards the achievement of high
frequency graphene electronics. The chemical complexity of graphene demands in-depth
quantum simulation analysis for understanding of the material properties and optimization of
graphene-based device performance. In connection with the different modelling communities,
it is also crucial to develop a multi-scale modelling strategy from first-principles to circuit
simulation. Though this requirement/objective is of course not limited to HF graphene
electronics, and is actually mandatory in all fields of nanosciences, the French modelling
groups involved in graphene will do a strong effort in this direction.

D2. Graphene for spin-based electronics and nanoelectronics beyond CMOS.
Targeted specific applications and state of the art: The potential of spin-based electronics
(spintronics) with graphene is highlighted in the “more-than-More devices” and the “Beyond
CMOS” sections of the ERD (Emerging Research Devices) part of the (pre-)2011 ITRS
(ITRS = International Technology Roadmap for Semiconductors, www.itrs.net). For example,
4 of the 6 proposals for “Non-FET, Non-charge-based Beyond CMOS devices” rely on
spintronics and, about “materials that could enable information processing with state
variables other than charge, such as spin, and that could potentially enable dramatic
increase in energy efficiency”, the ITRS emphasizes that “Graphene exhibits spin transport
characteristics that surpass those of any semiconductor studied to date”. Actually, devices
processing spin currents by series of logic gates acting on spin requires spin diffusion
lengths well above the submicronic range found in all conventional semiconductors or
metals. Much better results can be obtained with graphene, not only from the point of view
of the spin diffusion length but also from the many possibilities of spin manipulation
provided by the sensitivity of its electronic/magnetic properties to adjacent materials.
Advantages: The unique properties of graphene for the transport of spin polarized currents to
exceptionally long distances comes from its long spin lifetime (due mainly to the weak spinorbit
and hyperfine interactions of carbon) and its large electron velocity. In the usual
diffusive regime, spin diffusion lengths exceeding 100 m have been found on high mobility
graphene grown on SiC. In addition, as the graphene is only one (or a few) atom thick, its
electronic/magnetic properties presents an extreme sensitivity to external influences
(adatoms, adsorbed molecules, impurities, interfaces with magnetic or ferroelectric materials,
strains, structure of the edges, etc). This extreme sensitivity opens multiple possibilities of
gates acting on spin currents. By combining spin diffusion lengths in the 10 2 -10 3 m range
and this unique flexibility of the electronic/magnetic properties, the graphene turns out as an
ideal material to implement a large variety of spintronic devices, including large scale and
high speed “spin only” logic circuits in the “beyond CMOS perspective”.
Issues: The main issues on the way to graphene-based spintronic devices will be:
- Better understanding of the spin relaxation in graphene (theory and experimental tests).
- Identification of the imperfections (ripples, impurities, structural defects, interactions with
the substrate) controlling the spin relaxation and optimisation of the spin lifetime.
- Modelling and experiments of spin transport in the diffusive and ballistic regimes.
Investigation of nonclassical effects related to the Dirac fermion character.
- Optimisation of tunnel junctions for spin injection.
- Modelling and experimental investigation of the nanomagnetism of magnetic contacts.
- Modelling and experimental investigation of the effects on the electronic and magnetic
properties induced by magnetic or nonmagnetic adatoms, impurities and molecules, by
interfaces with magnetic or ferroelectric materials, by strains, by structuration of the edges or
by nanomeshes, etc. - Development of devices harnessing the above effects to manipulate
diffusive or ballistic spin currents injected into graphene (a more precise manipulation is
expected in the ballistic regime).
- Integration of graphene-based spintronic devices into CMOS architectures and non-volatile
memories of the next generation (STT-RAM).
Material issues: the high quality graphene required for large electron mobility and long spin
spin lifetime, and possibly ballistic transport, are in favour of epitaxially grown graphene (on
SiC or other substrates ) and also urge to develop transfer techniques to the best substrates

(BN, etc). This also implies using advanced structural and spectroscopic characterizations, in
particular with synchrotron radiation.
D3. Flexible optoelectronics and transparent conductive coating (touch
panels).
D4. Graphene photonics
High Frequency optoelectronic devices
Advantages: Graphene devices are now considered for opto-electronics. The linear
dispersion relation, the high mobility of charge carriers and the ultrafast relaxation of excited
carriers make graphene an ideal material for active photonic components like photodetectors,
modulators and phototransistors. The linear dispersion relation enables absorption covering
frequencies from far infrared up to ultraviolet light, while the high carrier mobility allows
high-speed operation.
State of the art (SOA): Recent photocurrent generation experiments in graphene show a
strong photo-response near metal/graphene interfaces, with an internal quantum efficiency of
15–30% despite its gapless nature. The photo-response does not degrade for optical intensity
modulations up to 40 GHz (with a 1.55 µm laser), and further analysis suggests that the
intrinsic bandwidth may exceed 500 GHz. Using different metals for source and drain
Mueller et al. have demonstrated a 10 Gbit/s error-free optical data link at a wavelength of
1.55 mm. The possibility of tuning the bi-layer graphene (BLG) bandgap by electric field
makes BLG dual gate transistors suitable to fabricate photo-detectors with a low dark current
and phototransistors with a large photoelectric gain.
Outstanding issues: For photonic data communication the modulator, a device converting
electric signals into a modulation of the light intensity is essential. Electro-absorption is
related to a change in absorption by the application of an electric field. The main advantages
of a graphene based electro-absorption modulator are mainly the expected high modulation
speeds, the easy integration onto photonic chips and the flexibility of using the modulator for
photon energies ranging from 0.2 up to 1eV.
1. A photoconductive switch is another building block of graphene-based optoelectronics.
Such a device permit short switching time and thus can be exploited for ultrahigh speed
optoelectronic sampling of RF signals. This could open the way to high dynamic range
ADC (analog-digital convertors) (typ. 8-10 bits) up to 10 Gs/s for radar and
communication systems.
2. High frequency graphene phototransistors could be implemented for optoelectronic
microwave oscillators. When such transistor is integrated in a resonant loop, high-speed
oscillations take place. The spectral purity of such an oscillator can be improved thanks to
injection of an optically carried clock signal into the phototransistor. Distributed
architectures with synchronized oscillators can be envisaged for the large phased array
antennas of ground/satellite based radar and communication systems. For satellite
communication systems, it could permit to end up with highly reconfigurable antennas
and thus to reallocate frequencies and beams as a function of the required data bit rates
(e.g. internet datas).
3. High-speed photo-mixing is another function to be demonstrated with a graphene
phototransistor. In this case the high mobility of carriers in graphene permit to realize
short transit time transistor with longer channel than in semiconductor compounds. This

approach can be extended to the realization of a high sensitivity coherent detection
scheme up to THz domain. High sensitivity THz detectors are needed both for security
and medical applications.
D5. Electron emission.
D6. Graphene sensors.
Graphene is an atomically thin membrane that cumulates unique electrical, optical,
mechanical and chemical properties. It constitutes a versatile and cost effective platform for
the development of a wealth of fast and ultrasensitive sensors. We list below a few
applications where the French community has already engaged strong efforts.
1. Microwave detectors (section D1) : here the aim is to improve the resolution of transistors
for radar (W-band : 90GHz) and telecommunication applications. Mid-term target is to
push to working limits of transistors to the sub-THz domain (500-1000 GHz) where
sensitive photon sensors are lacking both for security and medical applications. Main
issues are i) the increase of mobility for larger transit frequencies, ii) the achievement of
current limitation by optical phonons so as to increase the power gain, and iii) the
understanding of the role of acoustic phonons which control hot-carrier temperature
which limits sensor resolution.
2. Fast charge detectors (section D1) : following the general trend to track, investigate and
exploit elementary charge transfers in condensed matter, chemistry or biology there is
need for ultra-broadband and real time charge detectors. These are achieved today by
single electrons transistors (SETs), which are ultrasensitive but bandwidth limited
Coulomb blockade devices, or less sensitive quantum point contact transistors (QPC-
FETs). Due to the excellent gate-channel coupling and low noise properties, graphene
nanotransistors are promising route to optimize the sensitivity-bandwidth product and
open the way to single shot on-the-fly detection of quantum coherent devices.
3. Opto-electronic sensors (D3) : as explained in section D3, many possibilities are offered
to improve the SOA in photodetection resolution using non-linear effects that are specific
to graphene. …/…
4. Nano-electromagnetic detectors (NEMS)..) : Nano-resonators fabricated from exfoliated
graphene have been demonstrated to be actuated in the GHz range either optically or
electrically. Extremely high-Q resonators can are realized using suspended graphene
flakes connected to superconducting contacts French groups combine their know-hows
for investigating and exploiting these functionalities for graphene grown from metal or
oxide substrates, and appropriately transferred and suspended in resonators.
5. Chemical sensors: Electronic properties and conductivity of graphene can be modified
significantly by the adsorption of gases or molecules and this property can be used in turn
as a very sensitive detection technique of the presence of either oxidizing or reducing
entities. With this respect, graphene is a potential better alternative to carbon nanotubes,
in sensing devices as those developed at Onera for, for example, the detection of humidity
in extreme conditions (low or high temperature, low pressure) and of explosive gases. In
particular, it is expected that appropriate functionalization could lead to high selectivity
detection of specific entities.
6. Metrology, QHE standards, Quantum Hall resistance standards : The large characteristic
energy of monolayer graphene allows observing QHE at room temperature (but with very
high field). This leads to the realization of QH resistance standards compatible with dry
cryogenic techniques and low magnetic fields, that can be easily disseminated in the
industry. This requires mm-large Hall bars, made of high homogeneity and mobility
graphene, presumably by CVD or SiC growth. Beyond, graphene QHE has a role to play

in establishing the universal definition of the Klitzing R K for a possible redefinition of the
S.I units based on the fundamental constants h, e, and c.
D7. Graphene for high-end instrumentation.
D8. Energy storage and generation.
E. Composite materials, paints and coating. (workshop in Dec or Feb)
F. Biomedical applications.
G. Graphene environmental safety and health.
French Research groups concerned (Dirac matter, theory) MO. Goerbig
Permanent Staff Laboratory Keywords
Chris Ewels
Institut des Materiaux Jean
Rouxel (IMN), CNRS,
Nantes
DFT Modelling
Defects, mechanical deformation,
edges, chemical functionalisation,
Other carbon nanoforms (cones,
Alberto Zobelli LPS, Bâtiment 510,
Université Paris Sud, Orsay
Matteo Calandra
F. Mauri
Francois Ducastelle
Hakim Amara
Christophe Bichara
Cristina Bena
Jean-Noël Fuchs
Mark Oliver Goerbig
Anuradha Jagannathan
Gilles Montambaux
Frédéric Piéchon
UPMC Paris
LEM, ONERA-CNRS
Chatillon
CINAM, CNRS Marseille
LPS, Bâtiment 510,
Université Paris Sud, Orsay
Marcello Civelli
M . Monteverde, C. Pasquier LPS, Bâtiment 510,
Université Paris Sud, Orsay
fullerenes, …)
DFTB, DFT, MCarlo, MD,
irradiation damage,
microscopy simulation,
BN, MoS 2
Supercond. in layered materials
Intercalation, exfoliation
Electron-phonon coupling
Monte Carlo (TB) graphene/h-BN
growth on metal substrates
Edge states and disorder in graphene
nanoribbons
TB, STM simulation, magnetic fields;
engineering Dirac cones in systems
beyond graphene ; DMFT
High-pressure transport experiments
on a-(BEDT-TTF )2
I 3
Philippe Dollfus IEF, Université Paris Sud, Simulation graphene-based

Arnaud Bournel
Christophe Chassat
Jérôme Saint Martin
Pascal Pochet
Luigi Genovese
Xavier Waintal
Orsay
SPSMS/INAC/CEA,
Grenoble
nanostructures / devices
Non-equilibrium Green’s functions +
Dirac equation / TB
DFT-based graphene growth,
defect/edge engineering,
C, BN and BN-based nanostructures
(fullerene, nanotubes, sheets);
Topological insulators (theory),
modelling of electronic transport
Simulation graphene multi-layer,
transport. TB.
Topological insulators (theory)
Guy Trambly de Laissardière LPTM, Université de Cergy-
Pontoise
David Carpentier, Andrei Ecole Normale Supérieure,
Fedorenko, Edmond Orignac Lyon
Jérôme Cayssol Bordeaux University Topological insulators (theory)
Lucia Reining
LSI, Ecole Polytechnique, Electronic excitations in graphene
Christine Georgetti
Palaiseau
and few layer graphite,TDFT, Manybody
perturbation theory
Dominique Delande, Benoît
Grémaud
Laboratoire Kastler Brossel,
Paris
Theory of transport, localisation,
Dirac fermions in cold atoms
Nicolas Regnault
Laboratoire Pierre Aigrain, theory of quantum Hall effect
ENS Paris
Christian Miniatura Institut Non Linéaire de Nice Dirac fermions in cold atoms
French research groups concerned (Dirac matter, experiment) MO. Goerbig
Permanent Staff Laboratory Keywords
Hélène Bouchiat, Meydi Ferrier,
Sophie Guéron, Alik Kasumov,
Miguel Monteverde
Cristina Bena, Jean-Noël Fuchs,
Mark Oliver Goerbig, Anuradha
Jagannathan, Gilles Montambaux,
Frédéric Piéchon
LPS, Université Paris Sud
and CNRS; mesoscopic
physics group
Laboratoire de Physique des
Solides, Université Paris Sud
and CNRS; theory group
Transport measurements,
proximity effect
Theory of electronic in a
magnetic field, correlations,
transport, spectroscopy, band
structure
Christian Glattli, Francis Williams CEA Saclay Transport measurements, highfield
microwave and FIR
spectroscopy
Benjamin Sacépé, Clemens
Winkelmann
Institut Néel, Grenoble
Scanning tunneling
spectroscopy
Louis Jansen CEA Grenoble Transport measurements
Clément Faugeras, Marek LNCMI Grenoble
Potemski
B. Plaçais, G. Fève, J-M. Berroir LPA-ENS, Paris, mesoscopic
physics group
L-A. de Vaulchier, Y. Guldner, M.
Voos, J. Tignon, J. Mangeney
C. Voisin, Y. Chassagneux LPA- ENS, Paris, optics
group
High-field FIR and Raman
spectroscopy
High-frequency (GHz) transport
and noise
LPA- ENS, Paris, THz group THz spectroscopy and THZ/IR
magnetospectroscopy
Coherent and nonlinear optics,
Raman spectroscopy, graphene

Dominique Delande, Benoît
Grémaud
Laboratoire Kastler Brossel,
Paris
dots
Theory of transport and
localisation
French research groups concerned (hybrides B4)
Permanent Staff Laboratory Keywords
J. Coraux, N. Rougemaille, Institut Néel Grenoble
C. Vo-Van, O. Fruchart
V. Sessi, N.B. Brookes
P. Ohresser
ERSF Grenoble
Synchrotron Soleil
M. Sicot
(col. Univ. Konstanz
Germany)
L. Simon, M. Cranney, F.
Vonau, D. Aubel and J. L.
Bubendorff
(col. Univ. Freiburg,
FRIAS Germany)
C. Bena
Hybrid Ferromagnet/graphene. CVD
Graphene/metal substrate. SPLEEM
XMCD
Institut J. Lamour, Nancy Hybrid Ferromagnet/graphene. CVD
Graphene/metal substrate. STM-STS XPS
UPS
IS2M CNRS Mulhouse
LPS Université Paris Sud,
Orsay
Hybrid graphene/SiC
Metal intercalation. MBE
Supramolecular/graphene
(UHV preparation). STM-STS, AFM, STM in
situ, XPS-UPS
STM simulation, engineering Dirac cones in
systems beyond graphene
A. Taleb, P. Lefèvre, A.
Tejeda, F. Bertran
P. Samori
(col. V. Palermo CNR
Bologna Italy)
V. Bouchiat, A. Allain, Z.
Han, N. Bendiab, W.
Wernsdorfer, L. Marty, A.
Reserbat-Plantey
Mario Ruben
(Karlsruhe Insitute of
Technology Germagny)
(col. M. Affronte, A.
Candini CNR Inst. Of
Nanosci. Modena Itly)
W. Wernsdorfer, F.
Balestro, C. Thirion, Edgar
Bonet
(col. M. Affronte, A.
Candini CNR Inst. Of
Nanosci. Modena Itly)
Synchrotron Soleil
St Aubin Gif-sur-Yvette
ISIS Strasbourg
CASSIOPE line
XPS, ARPES
Chemical Functionlization of graphene.
Supramolecular structures. In-situ STM
Institut Néel Grenoble Hybrid Superconducting metal /Graphene.
Gate tunable superconducting nanodevices.
SQUID, Transport measurements Raman,
Nanomechanical devices
IPCMS CNRS Strasbourg Functionalization of graphene
Molecule/Graphene
Design and Synthesis of supramolecular
Magnet
Spin valve, Quantum spintronic
Institut Néel Grenoble
A. Pénicaud Centre de Recherche
Paul-Pascal, Pessac
A. Cresti Institut de
(col. S. Roche & P. Microelecronique
Ordejon CIN BellaterraElectromagnétisme et
Spin valve, Quantum spintronic,
Supramolecular magnet
Graphite Intercalation Compounds (GICs),
Chemical exfoliation of graphene, 3D
graphene architecture
Theory-Simulation
DFT. Functionalization of Graphene and
graphene nanoribbons

Spain)
Photonique Grenoble
I. Janowska, G. Dalmas, K. LMSPC Strasbourg
Chizari, D. Bégin, M. –J.
Ledoux, C. Pham-Huu
O. Ersen, H. Bulot
G. Dujardin, A. J. Mayne,
G. Comtet
A. Gourdon
M. Monthioux, A.
Masseboeuf, M. Hÿtch, P.
Puech, W. Bacsa
W. Bacsa, P. Puech
Catalysis, Synthesis of few layer graphene
(FLG)
Microwaves irradiation, mechanical thinning
of graphite-based material.
AFM, XPS, IR, HR-TEM, TEM-SAED,
IPCMS
ISMO Université Paris-Sud Hybrid structures Mol/G/SiC
Orsay
STM-STS
CEMES Toulouse
Chemistry : Synthesis of supramolecules
Coupled advanced TEM and Raman
Characterisation: Atomic resolution TEM,
Electron holography, Geometric Phase
Analysis, HR-EELS, dynamic behaviour
under in-TEM applied stresses (mechanical,
electrical, heat…)
Graphene/polymer composites
M. L. Bocquet ENS-Lyon Theory DFT Calculation
Intercalated Graphene G/Metal, G/SiC,
Simulation STM, surface Reactiviy
F. Banhart, O. Cretu IPCMS Strasbourg In-situ electron microscopy
Interaction metal/graphene
A. Bianco Institut de Biologie
Moléculaire et Cellulaire
Strasbourg
C. Hérold, S. Cahen, J.-F.
Marêché, P. Lagrange
Biological applications of Graphene and
Carbon nanotubes
Institut Jean Lamour NancySuperconductive GICs
French research groups concerned (Synthesis on metals)
Permanent Staff Laboratory Keywords
J. Coraux, V. Bouchiat, N.
Bendiab and co
A. Loiseau, H. Amara, B. Attal-
Trétout et al
J.-L. Maurice , M. Châtelet
F. Le Normand, É. Caristan
Institut Néel Grenoble
LEM, CNRS-ONERA,
Chatillon-Palaiseau
LPICM, Ecole
Polytechnique, Palaiseau
graphitization and direct growth of
graphene by MBE and CVD on
transition and noble metals .
graphene transfer. CVD
equipments for synthesis of
graphene : Specific CVD
reactor/furnace equipment devoted
to the in-situ analysis of
nanostructure growth
- Physical-chemical
characterization
equipments (SEM, TEM,
Raman, STM, AFM), Synchrotron
radiation
CVD growth of BN layers on
different substrates and of graphene
on CVD, TEM-STEM (EELS),
Photo and cathodoluminescence in
far UV, gas and IR sensing, optical
absorption
CVD, PE- and HW-CVD, MBE, In
situ TEM growth, Micro & nano-

C.S. Cojocaru
jeanluc.maurice@polytechnique.edu
B. Caussat , S. Bordet ENSIACET (Toulouse) and
ARKEMA
http://www.graphistrength.fr
Raman spectroscopy, XPS, AES,
LEED, SEM, TEM, EDX, EELS
Large scale synthesis of graphene
development, device realization,
health safety environment
B. Plaçais et al LPA, ENS Paris CVD growth of carbon
nanotubes, graphene and BN.
Nano-device fabrication in
clean room. High-resolution
transport and spectroscopy,
including ultra-fast, in the
electromagnetic spectrum from
microwave to optics.
Photoluminescence, Raman
spectroscopy
B. Doudin et al IPCMS Strasbourg Development of a CVD reactor for
a high Quality CVD graphene
(medium to large area) Freestanding
CVD graphene large area
graphene grown or transferred on
arbitrary substrates or electron
transport and optical
measurements.
M. Mayne et al Laboratoire Francis Perrin,
CEA-CNRS, URA 2453
CVD growth of graphene on metal
substrates (Cu, Ir,…)
- In-situ analysis of CNT
during their growth by CVD by
XRay diffraction
French research groups concerned (Epitaxial graphene on SiC)
Permanent Staff Laboratory Keywords
D. Vignaux and coworkers Institute of Electronics,
Microelectronics and
Nanotechnology (IEMN-
Lille)
Ab. Ouerghi and co
Laboratory of Photonics and
Nanostructure (LPN-
Marcoussis)
A. Michon and co The Center for Research on
Heteroepitaxy and
Applications (CRHEA-Nice)
graphitization and direct growth of
graphene by MBE on SiC and on
insulating substrates.
graphitization of relaxed cubic
polytype 3C-SiC templates on Si
wafers.
direct growth by CVD, on 6H-SiC
as well as on templates on Si,
mainly 3C-SiC/Si and AlN/Si.

J.Y Veuillen, Ph. Malet, L.
Magaud
Institut Néel Grenoble
fundamental structural and
electronic studies and modelling of
graphene on SiC.
L. Simon, M. Cranney IS2M, Mulhouse Graphitization and direct growth
on SiC templates, intercalation,
molecular grafting
J.L. Sauvajol, P. Landois, B.
Jouault, J.R. Hutzinger, T.
Michel, M. Paillet et al
A. Taleb, P. Lefèvre, A. Tejeda,
F. Bertran
Laboratoire Charles
Coulomb, Montpellier
Synchrotron Soleil
St Aubin Gif-sur-Yvette
Graphitization and direct growth
on 6H-SiC templates, Raman -
optics characterisation, transport
properties
CASSIOPE line
XPS, ARPES
French groups working in fields related to electronic transport and HF Electronics
Permanent Staff Laboratory Keywords
CEA/SPEC/LEM, Saclay
V. Derycke
Stéphane Campidelli
Pascale Chenevier
Arianna Filoramo
vincent.derycke@cea.fr
E. Pichonat
Henri Happy
Dominique Vignaud
Xavier Wallart
henri.happy@iemn.univ-lille1.fr
Bernard Plaçais
Gwendal Fève
Jean-Marc Berroir
Christophe Voisin
bernard.placais@lpa.ens.fr
J.-L. Maurice
M. Châtelet
F. Le Normand
É. Caristan
C.S. Cojocaru
jean-luc.maurice@polytechnique.edu
Ivana Petkovic
Fabien Portier
Patrice Roche
Christian Glattli
christian.glattli@cea.fr
Philippe Dollfus
Arnaud Bournel
IEMN, Université Lille 1,
Lille
LPA, ENS, Paris
LPICM, Ecole
Polytechnique, Palaiseau
CEA/SPEC/, Saclay
IEF, Université Paris Sud,
Orsay
Flexible graphene FETs, HF
characterization,
functionalization of graphene,
chemistry engineering of
graphene
Graphitization of SiC, MBE on
SiC, CVD on metals, Nanoribbon
FET, HF charac.,
Transfer, flexible substrates,
SEM, XPS, AFM
Coherence, dynamics and noise
in quantum conductors,
nanoelectronics,
single electron
devices. Electronic and optic
properties of nanostructures.
THz-IR spectroscopy, ultra-fast
THz spectroscopy, Raman
spectroscopy in semiconductors
and carbon materials.
CVD, PE- and HW-CVD,
MBE, Micro & nano-Raman
spectroscopy, XPS, AES,
LEED, SEM, TEM, EDX,
EELS
Simulation graphene-based
nanostructures / devices.

Jérôme Saint Martin
Sylvie Retailleau
Christophe Chassat
philippe.dollfus@u-psud.fr
http://computationalelectronics.ief.u-psud.fr
Electron and phonon transport.
Non-equilibrium Green’s
functions + Dirac equation /
Tight-binding
Mireille Mouis
Alessandro Cresti
IMEP-LHAC, Grenoble
Graphene FET, Suspended
graphene structures, Static and
RF characterization, Near-field
characterization, ab initio and
tight-binding simulation of
graphene
E. Dujardin et al CEMES, CNRS Toulouse Electronic transport in
nanoribbons and molecular
scale graphene structures
Devices fabrication (EBL,
photolithography, stencil,
bonding) and graphene
patterning, transport and cryomagneto
measurements,
French groups working in fields related to spintronics A. Fert
Permanent Staff Laboratory Keywords
A.Fert et al UMR Thales -CNRS Spintronics beyond CMOS
J.F. Dayen et al IPCMS, Strasbourg Graphene nanojunctions,
doping, nanofabrication, spin
valves, ballistic spin transport, ,
large CVD samples needed
French groups working in fields related to Opto-electronics
Permanent Staff Laboratory Keywords
IPCMS Strasbourg
S. Berciaud, B. Gilliot, B. Doudin et
al
Nanoclean room, optical
spectroscopy (single nanoobject
detection and
spectroscopy, ultrafast carrier
dynamics, charge/energy
transfer for photovoltaic
applications, exfoliated and
CVD samples
Christophe Voisin LPA, ENS, Paris Single-object devices
Electronic and optic
(Photoluminescence, pumpprobe)
properties of nanostructures.