Topological Insulators - GDR Meso
Topological Insulators - GDR Meso Topological Insulators - GDR Meso
Transport measurement on TI ‣ Bi2Se3 : good candidate ‣Large band gap : 300 meV ‣Single Dirac surface state Checkelsky et al. PRL, 103 (2010) 2 ... but μb in the conduction band ➡ chemical bulk doping by Ca (CaxBi2-xSe3) Pb of residual transport by bulk states ? ‣ Thin Films (reduction of bulk) mardi 3 janvier 12 FIG. 2: Curves of ρ vs. H in Sample G4 at 0.3< T
Transport measurement on TI ‣ Bi2Se3 : good candidate ‣Large band gap : 300 meV ‣Single Dirac surface state Checkelsky et al. PRL, 103 (2010) 2 ... but μb in the conduction band ➡ chemical bulk doping by Ca (CaxBi2-xSe3) Pb of residual transport by bulk states ? ‣ Thin Films (reduction of bulk) ‣ New Materials : strained HgTe ? mardi 3 janvier 12 FIG. 2: Curves of ρ vs. H in Sample G4 at 0.3< T
- Page 1 and 2: Some Transport properties of Topolo
- Page 3 and 4: Surface States of 3D Topological In
- Page 5 and 6: Transport measurement on TI Bi2Se3
- Page 7: Transport measurement on TI Bi2Se3
- Page 11 and 12: 2D Dirac Matter A B H = ~v F ( y .k
- Page 13 and 14: Diffusion of 2D Dirac states • Tr
- Page 15 and 16: Study of diffusion of 2D Dirac stat
- Page 17 and 18: (Weak) Localization • Probability
- Page 19 and 20: (Weak) Localization / Quantum trans
- Page 21 and 22: Weak localization : Universality cl
- Page 23 and 24: Weak localization : Universality cl
- Page 25 and 26: Anderson Univ. classes and Topologi
- Page 27 and 28: Anderson Univ. classes and Topologi
- Page 29 and 30: Anisotropic Scattering of Dirac sta
- Page 31 and 32: Anisotropic Scattering of Dirac sta
- Page 33: Conclusion ‣ New playground for u
Transport measurement on TI<br />
‣ Bi2Se3 : good candidate<br />
‣Large band gap : 300 meV<br />
‣Single Dirac surface state<br />
Checkelsky et al. PRL, 103 (2010)<br />
2<br />
... but μb in the conduction band<br />
➡ chemical bulk doping by Ca (CaxBi2-xSe3)<br />
Pb of residual transport by bulk states ?<br />
‣ Thin Films (reduction of bulk)<br />
‣ New Materials : strained HgTe ?<br />
mardi 3 janvier 12<br />
FIG. 2: Curves of ρ vs. H in Sample G4 at 0.3< T
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