Topological Insulators - GDR Meso

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Transport measurement on TI Bi2Se3 : good candidate ‣Large band gap : 300 meV ‣Single Dirac surface state Checkelsky et al. PRL, 103 (2010) ... but μb in the conduction band ➡ chemical bulk doping by Ca (CaxBi2-xSe3) Pb of residual transport by bulk states ? Anti-localization cusp at low field mardi 3 janvier 12
Transport measurement on TI Bi2Se3 : good candidate ‣Large band gap : 300 meV ‣Single Dirac surface state Checkelsky et al. PRL, 103 (2010) ... but μb in the conduction band ➡ chemical bulk doping by Ca (CaxBi2-xSe3) Pb of residual transport by bulk states ? 2 es of ρ vs. H in Sample G4 at 0.3< T
Page 1 and 2: Some Transport properties of Topolo
Page 3 and 4: Surface States of 3D Topological In
Page 5: Transport measurement on TI Bi2Se3
Page 9 and 10: Transport measurement on TI ‣ Bi2
Page 11 and 12: 2D Dirac Matter A B H = ~v F ( y .k
Page 13 and 14: Diffusion of 2D Dirac states • Tr
Page 15 and 16: Study of diffusion of 2D Dirac stat
Page 17 and 18: (Weak) Localization • Probability
Page 19 and 20: (Weak) Localization / Quantum trans
Page 21 and 22: Weak localization : Universality cl
Page 23 and 24: Weak localization : Universality cl
Page 25 and 26: Anderson Univ. classes and Topologi
Page 27 and 28: Anderson Univ. classes and Topologi
Page 29 and 30: Anisotropic Scattering of Dirac sta
Page 31 and 32: Anisotropic Scattering of Dirac sta
Page 33: Conclusion ‣ New playground for u

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