Topological Insulators - GDR Meso
Topological Insulators - GDR Meso
Topological Insulators - GDR Meso
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Transport measurement on TI<br />
Bi2Se3 : good candidate<br />
‣Large band gap : 300 meV<br />
‣Single Dirac surface state<br />
Checkelsky et al. PRL, 103 (2010)<br />
... but μb in the conduction band<br />
➡ chemical bulk doping by Ca (CaxBi2-xSe3)<br />
Pb of residual transport by bulk states ?<br />
Undoped versus doped samples<br />
Gi,Mi : Various Ca doping<br />
bulk sample (2x2x0.05 mm)<br />
mardi 3 janvier 12