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Topological Insulators - GDR Meso

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Transport measurement on TI<br />

Bi2Se3 : good candidate<br />

‣Large band gap : 300 meV<br />

‣Single Dirac surface state<br />

Checkelsky et al. PRL, 103 (2010)<br />

... but μb in the conduction band<br />

➡ chemical bulk doping by Ca (CaxBi2-xSe3)<br />

Pb of residual transport by bulk states ?<br />

Undoped versus doped samples<br />

Gi,Mi : Various Ca doping<br />

bulk sample (2x2x0.05 mm)<br />

mardi 3 janvier 12

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