Topological Insulators - GDR Meso
Topological Insulators - GDR Meso Topological Insulators - GDR Meso
Diffusion of 2D Dirac states • Transport in metallic regime : k F 1/l e (high doping) k F 1/l e F l e • Transport in near Dirac point: k F apple 1/l e (high doping) F k F apple 1/l e l e Mirlin et al. PRB, (2009) Fedorenko et al. (unpublished) mardi 3 janvier 12
Study of diffusion of 2D Dirac states • Transport in metallic regime : k F 1/l e (high doping) k F 1/l e F l e weak (anti-)localization (long wires) 0.2 0 -0.2 -0.4 -0.6 -0.8 2.10 - 5 B 690 mK -2000 0 2000 conductance universal conductance fluctuations (short wire) Conductance, same sample, different spins config. 12.4 12.2 12 11.8 11.6 11.4 11.2 11 10.8 0 20 40 60 80 100 Flux Through the Sample mardi 3 janvier 12
- Page 1 and 2: Some Transport properties of Topolo
- Page 3 and 4: Surface States of 3D Topological In
- Page 5 and 6: Transport measurement on TI Bi2Se3
- Page 7 and 8: Transport measurement on TI Bi2Se3
- Page 9 and 10: Transport measurement on TI ‣ Bi2
- Page 11 and 12: 2D Dirac Matter A B H = ~v F ( y .k
- Page 13: Diffusion of 2D Dirac states • Tr
- Page 17 and 18: (Weak) Localization • Probability
- Page 19 and 20: (Weak) Localization / Quantum trans
- Page 21 and 22: Weak localization : Universality cl
- Page 23 and 24: Weak localization : Universality cl
- Page 25 and 26: Anderson Univ. classes and Topologi
- Page 27 and 28: Anderson Univ. classes and Topologi
- Page 29 and 30: Anisotropic Scattering of Dirac sta
- Page 31 and 32: Anisotropic Scattering of Dirac sta
- Page 33: Conclusion ‣ New playground for u
Diffusion of 2D Dirac states<br />
• Transport in metallic regime :<br />
k F<br />
1/l e<br />
(high doping)<br />
k F<br />
1/l e<br />
F<br />
l e<br />
• Transport in near Dirac point:<br />
k F apple 1/l e<br />
(high doping)<br />
F<br />
k F apple 1/l e<br />
l e<br />
Mirlin et al. PRB, (2009)<br />
Fedorenko et al. (unpublished)<br />
mardi 3 janvier 12
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