City of Light: The Story of Fiber Optics

NOTES TO PAGES 152–155 305
45 (1996) (Proceedings of the Nobel Symposium ‘‘Heterostructures in Semiconductors),
forthcoming.
15. Alferov, ‘‘The history and future.’’
16. Herb Nelson, ‘‘Epitaxial growth from the liquid state and its application to
the fabrication of tunnel and laser diodes,’’ RCA Review 24 pp. 603–615 (Dec.
1963).
17. Alferov, ‘‘The history and future’’; he refers to Z. I. Alferov et al., ‘‘Highvoltage
p-n junctions in GaxAl 1�xAs crystals,’’ Fizika i Tekhnika Poluprovodnikov 1,
p. 1579 (1967) (submitted May 18, 1967); published in English in Soviet Physics—Semiconductors
1, p. 1313 (1968).
18. A team at the IBM T. J. Watson Research Center made gallium aluminum
arsenide heterostructures on gallium arsenide substrates. H. Rupprecht, J. M.
Woodall, and G. D. Pettit, ‘‘Efficient visible electroluminescence at 300�K from
Ga 1�xA 1�xAs p-n junctions grown by liquid-phase epitaxy,’’ Applied Physics Letters
11, pp. 81–83 (Aug. 1, 1967).
19. H. Kressel and H. Nelson, ‘‘Close confinement gallium arsenide pn junction
lasers with reduced optical loss at room temperature,’’ RCA Review 30, pp. 106–
113 (Mar. 1969).
20. ‘‘What is in a name? Plenty—when it refers to new diodes,’’ Laser Focus
5, pp. 20–21 (Aug. 1969).
21. Izuo Hayashi, ‘‘Heterostructure lasers,’’ IEEE Transactions on Electron Devices
ED-31, pp. 1630–1642 (Nov. 1984).
22. Morton Panish, interview, July 19, 1995.
23. Hayashi, ‘‘Heterostructure lasers.’’
24. Morton Panish, telephone interview, June 30, 1995.
25. Hayashi, ‘‘Heterostructure lasers.’’
26. I. Hayashi, M. Panish, and P. W. Foy, ‘‘A low-threshold room-temperature
injection laser,’’ IEEE Journal of Quantum Electronics QE-5, pp. 211–213 (Apr.
1969).
27. Kressel and Nelson, ‘‘Close-confinement.’’
28. See fig. 4 in Z. I. Alferov et al., ‘‘AlAs-GaAs Heterojunction injection lasers
with a low room-temperature threshold,’’ Fizika i Tekhnika Poluprovodnikov 3, No.
9, pp. 1328–1332 (Sept. 1969); published in English in Soviet Physics—Semiconductors
3, No. 9, pp. 1107–1110 (Mar. 1970).
29. Zhores I. Alferov, letter to author, June 14, 1996.
30. Hayashi, ‘‘Heterostructure lasers.’’
31. Ibid. Memorial Day was celebrated on May 30, which was a Saturday in
1970. Bell employees had the following Monday off.
32. The executive was Bill Boyle. Panish telephone interview, June 30, 1995.
33. I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, ‘‘Junction lasers which
operate continuously at room temperature,’’ Applied Physics Letters 17, No. 3,
pp. 109–111 (Aug. 1, 1970).
34. Alferov, ‘‘The history and future.’’
35. Jack C. Dyment, telephone interview, Dec. 18, 1996; J. C. Dyment,
‘‘Hermite-Gaussian mode patterns in GaAs junction lasers,’’ Applied Physics Letters
10, No. 3, pp. 84–86 (Feb. 1, 1967).
36. Peter Selway, telephone interview, Jan. 31, 1995.
37. Zhores I. Alferov et al., ‘‘Effect of the heterostructure parameters on the
laser threshold current and the realization of continuous generation at room temperature,’’
Fizika i Tekhnika Poluprovodnikov 4, p. 1826 (1970) (submitted May 6,