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Nuisances of SiPMs and how to deal with them in ... - KICP Workshops

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Diode capacitances<br />

G = ΔQ = C * ΔU<br />

Bias above breakdown<br />

Breakdown voltage<br />

<strong>in</strong>creases <strong>with</strong><br />

temperatures<br />

For fixed bias <strong>in</strong>crease<br />

<strong>of</strong> ΔU -> <strong>in</strong>crease <strong>of</strong><br />

ga<strong>in</strong><br />

Ga<strong>in</strong><br />

A typical value for ga<strong>in</strong> change is 2.5%/C (e.g. Hamamatsu MPPC)<br />

Nepomuk Otte<br />

-0.8% / C<br />

But values <strong>of</strong> 0.5% /C are possible if cell capacitances are reduced<br />

20

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