BPY 62 NPN-Silizium-Fototransistor Silicon NPN ... - SmartData
BPY 62 NPN-Silizium-Fototransistor Silicon NPN ... - SmartData
BPY 62 NPN-Silizium-Fototransistor Silicon NPN ... - SmartData
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<strong>NPN</strong>-<strong>Silizium</strong>-<strong>Fototransistor</strong><br />
<strong>Silicon</strong> <strong>NPN</strong> Phototransistor<br />
<strong>BPY</strong> <strong>62</strong><br />
Wesentliche Merkmale<br />
• Speziell geeignet für Anwendungen im Bereich<br />
von 420 nm bis 1130 nm<br />
• Hohe Linearität<br />
• Hermetisch dichte Metallbauform (TO-18) mit<br />
Basisanschluß, geeignet bis 125 °C<br />
• Gruppiert lieferbar<br />
Anwendungen<br />
• Lichtschranken für Gleich- und<br />
Wechsellichtbetrieb<br />
• Industrieelektronik<br />
• „Messen/Steuern/Regeln“<br />
Typ<br />
Type<br />
Bestellnummer<br />
Ordering Code<br />
<strong>BPY</strong> <strong>62</strong> Q60215-Y<strong>62</strong><br />
<strong>BPY</strong> <strong>62</strong>-3 Q60215-Y1112<br />
<strong>BPY</strong> <strong>62</strong>-3/4 Q60215-Y5198<br />
<strong>BPY</strong> <strong>62</strong>-4 Q60215-Y1113<br />
2000-01-01 1<br />
Features<br />
• Especially suitable for applications from<br />
420 nm to 1130 nm<br />
• High linearity<br />
• Hermetically sealed metal package (TO-18)<br />
with base connection, suitable up to 125 °C<br />
• Available in groups<br />
Applications<br />
• Photointerrupters<br />
• Industrial electronics<br />
• For control and drive circuits
Grenzwerte<br />
Maximum Ratings<br />
Bezeichnung<br />
Parameter<br />
Betriebs- und Lagertemperatur<br />
Operating and storage temperature range<br />
Löttemperatur bei Tauchlötung<br />
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s<br />
Dip soldering temperature ≥ 2 mm distance<br />
from case bottom, soldering time t ≤ 5 s<br />
Löttemperatur bei Kolbenlötung<br />
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s<br />
Iron soldering temperature ≥ 2 mm distance<br />
from case bottom, soldering time t ≤ 3 s<br />
Kollektor-Emitterspannung<br />
Collector-emitter voltage<br />
Kollektorstrom<br />
Collector current<br />
Kollektorspitzenstrom, τ < 10 μs<br />
Collector surge current<br />
Emitter-Basisspannung<br />
Emitter-base voltage<br />
Verlustleistung, T A = 25 °C<br />
Total power dissipation<br />
Wärmewiderstand<br />
Thermal resistance<br />
2000-01-01 2<br />
Symbol<br />
Symbol<br />
Wert<br />
Value<br />
T op; T stg – 40 … + 100 °C<br />
T S 260 °C<br />
T S 300 °C<br />
V CE 50 V<br />
I C 100 mA<br />
I CS 200 mA<br />
V EB 7 V<br />
Einheit<br />
Unit<br />
P tot 200 mW<br />
R thJA 500 K/W<br />
<strong>BPY</strong> <strong>62</strong>
Kennwerte (TA = 25 °C, λ = 950 nm)<br />
Characteristics<br />
Bezeichnung<br />
Parameter<br />
Wellenlänge der max. Fotoempfindlichkeit<br />
Wavelength of max. sensitivity<br />
Spektraler Bereich der Fotoempfindlichkeit<br />
S = 10% von Smax Spectral range of sensitivity<br />
S = 10% of Smax Bestrahlungsempfindliche Fläche<br />
Radiant sensitive area<br />
Abmessung der Chipfläche<br />
Dimensions of chip area<br />
Abstand Chipoberfläche zu Gehäuseoberfläche<br />
Distance chip front to case surface<br />
Halbwinkel<br />
Half angle<br />
Fotostrom der Kollektor-Basis-Fotodiode<br />
Photocurrent of collector-base photodiode<br />
Ee = 0.5 mW/cm 2 , VCB = 5 V<br />
Ev = 1000 Ix, Normlicht/standard light A,<br />
VCB = 5 V<br />
Kapazität<br />
Capacitance<br />
VCE = 0 V, f = 1 MHz, E = 0<br />
VCB = 0 V, f = 1 MHz, E = 0<br />
VEB = 0 V, f = 1 MHz, E = 0<br />
Dunkelstrom<br />
Dark current<br />
VCE = 35 V, E = 0<br />
2000-01-01 3<br />
Symbol<br />
Symbol<br />
Wert<br />
Value<br />
λ S max 850 nm<br />
λ 420 … 1130 nm<br />
Einheit<br />
Unit<br />
A 0.12 mm 2<br />
L × B<br />
L × W<br />
0.5 × 0.5 mm × mm<br />
H 2.4 … 3.0 mm<br />
ϕ ± 8 Grad<br />
deg.<br />
I PCB<br />
I PCB<br />
C CE<br />
C CB<br />
C EB<br />
4.5<br />
17<br />
8<br />
11<br />
19<br />
μA<br />
μA<br />
pF<br />
pF<br />
pF<br />
I CEO 5 (≤ 100) nA<br />
<strong>BPY</strong> <strong>62</strong>
2000-01-01 4<br />
<strong>BPY</strong> <strong>62</strong><br />
Die <strong>Fototransistor</strong>en werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern<br />
gekennzeichnet.<br />
The phototransistors are grouped according to their spectral sensitivity and distinguished by<br />
arabian figures.<br />
Bezeichnung<br />
Parameter<br />
Fotostrom, λ = 950 nm<br />
Photocurrent<br />
E e = 0.5 mW/cm 2 , V CE = 5 V<br />
E v = 1000 Ix, Normlicht/<br />
standard light A,<br />
V CE = 5 V<br />
Anstiegszeit/Abfallzeit<br />
Rise and fall time<br />
I C = 1 mA, V CC = 5 V, R L = 1 kΩ<br />
Kollektor-Emitter-Sättigungsspannung<br />
Collector-emitter saturation voltage<br />
I C = I PCEmin 1) × 0.3,<br />
E e = 0.5 mW/cm 2<br />
Stromverstärkung<br />
Current gain<br />
E e = 0.5 mW/cm 2 , V CE = 5 V<br />
Symbol<br />
Symbol<br />
I PCE<br />
I PCE<br />
-2 -3<br />
Wert<br />
Value<br />
-4 -5<br />
0.5 … 1.0<br />
3.0<br />
0.8 … 1.6<br />
4.6<br />
1.25 … 2.5<br />
7.2<br />
≥ 2.0<br />
11.4<br />
Einheit<br />
Unit<br />
mA<br />
mA<br />
t r, t f 5 7 9 12 μs<br />
V CEsat 150 150 160 180 mV<br />
I PCE<br />
---------<br />
I PCB<br />
1) I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe.<br />
1) I PCEmin is the min. photocurrent of the specified group.<br />
170 270 420 670 –
Relative Spectral sensitivity<br />
S rel = f (λ)<br />
Output Characteristics<br />
I C = f (V CE ), I B = Parameter<br />
Photocurrent<br />
I PCE/I PCE25 o = f (T A), V CE = 5 V<br />
Photocurrent<br />
I PCE = f (E e), V CE = 5 V<br />
Output Characteristics<br />
I C = f (V CE ), I B = Parameter<br />
Dark Current<br />
I CEO/I CEO25 o = f (T A), V CE =25V,E =0<br />
2000-01-01 5<br />
Total Power Dissipation<br />
P tot = f (T A)<br />
Dark Current<br />
I CEO = f (V CE ), E = 0<br />
<strong>BPY</strong> <strong>62</strong><br />
Collector-Emitter Capacitance<br />
C CE = f (V CE), f = 1 MHz, E = 0
Collector-Base Capacitance<br />
C CB = f (V CB), f = 1 MHz, E = 0<br />
Directional Characteristics<br />
S rel = f (ϕ)<br />
Emitter-Base Capacitance<br />
C EB = f (V EB), f = 1 MHz, E = 0<br />
2000-01-01 6<br />
<strong>BPY</strong> <strong>62</strong>
Maßzeichnung<br />
Package Outlines<br />
ø0.45 (0.018)<br />
Radiant<br />
Chip position sensitive area<br />
14.5 (0.571)<br />
12.5 (0.492)<br />
(2.7 (0.106))<br />
Approx. weight 1.0 g<br />
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).<br />
ø4.8 (0.189)<br />
ø4.6 (0.181)<br />
5.1 (0.201)<br />
4.8 (0.189)<br />
6.2 (0.244)<br />
5.4 (0.213)<br />
2000-01-01 7<br />
1.1 (0.043)<br />
0.9 (0.035)<br />
1.1 (0.043)<br />
0.9 (0.035)<br />
E C B<br />
2.54 (0.100)<br />
spacing<br />
ø5.6 (0.220)<br />
ø5.3 (0.209)<br />
GMOY6019<br />
<strong>BPY</strong> <strong>62</strong>
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