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Maria Bayard Dühring - Solid Mechanics

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40 Chapter 6 Design of acousto-optical interaction [P3]-[P7]<br />

(n eff,1 −n no )/ P 1/2 [W −1/2 ]<br />

(a)<br />

4<br />

2<br />

0<br />

−2<br />

−4<br />

x 10−6<br />

6<br />

left waveguide<br />

right waveguide<br />

−6<br />

0 0.5 1 1.5 2<br />

phase of SAW, φ x π<br />

saw<br />

Figure 6.4 Results for the SOI sample. (a): Increase of refractive index (neff,1 −nno)/ √ P<br />

in the two waveguides as function of the SAW phase φsaw. φsaw = 0 corresponds to a wave<br />

crest in the left waveguide and a trough in the right. (b): von Mises stress with arbitrary<br />

scale.<br />

at the crests and the troughs. It is observed from figure 6.4(a) that losses due to<br />

reflections appear between the waveguides as (neff,1−nno)/ √ P in the right waveguide<br />

never reaches the extreme values achieved in the left waveguide. It is noted that the<br />

values of (neff,1 − nno)/ √ P are small because of the limited number of electrodes. In<br />

experiments several hundred electrode fingers are employed for the wave generation.<br />

In order to understand the acousto-optical interaction it is essential to know the<br />

polarization direction of the electric field of the propagating optical modes. An optical<br />

mode polarized in a certain direction mainly detects the refractive index and<br />

its change in this direction. When designing a device for acousto-optical interaction<br />

it is therefore important that the refractive index changes in the polarization<br />

direction. The fundamental optical modes for the two different samples are both<br />

polarized in the x1-direction. The waveguide in the GaAs/AlGaAs sample supports<br />

one mode and it is of first order. In figure 6.5(a) the increase in refractive index in the<br />

x1-direction, ∆n11/ √ P , is plotted around one of the waveguides where a Rayleigh<br />

wave crest induces stresses. The time averaged power flow in the x3-direction is<br />

indicated by the contour lines with an arbitrary scale. The optical mode has its<br />

center in the waveguide and is extending to the substrate below the waveguide. The<br />

Rayleigh wave crest is introducing stresses in the entire waveguide area except the<br />

upper corners, such that the optical mode is overlapping well with ∆n11/ √ P . The<br />

interaction is ∆neff,1 = 1.50 · 10 −5 W −1/2 . A similar plot is seen in figure 6.5(b) for<br />

the fundamental mode in the SOI sample. In this case the height of the waveguide<br />

is bigger compared to the width and therefore the Rayleigh wave only introduces<br />

stresses and deformations at the bottom and does not deform the upper part. For<br />

that reason ∆n11/ √ P only has a significant value at the bottom of the waveguide.<br />

Because of the bigger material contrast between the waveguide and the substrate

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