Detectors and Emitters - Excelitas Technologies

Detectors and Emitters
For Defense, Aerospace and
Security Applications
Delivering the Solutions that keep our
troops safe on the ground, in the water
and in the air...it’s our only mission.

A Proven Heritage of Leadership
in supporting critical
Defense and Aerospace Programs

our defense detectors, emitters
and modules are contributing to
applications on the Ground, in
the Water and in the Air including:
• Laser range finding
• Laser warning systems
• Semi-active laser receiver and
terminal guidance
• Free Space communication
• Missile guidance
• Proximity fuzing
www.excelitas.com
Over 50 Years
of Unequalled Experience
Today’s advanced defense and aerospace applications demand mission-critical performance,
reliability, and support to keep our troops safe, on the ground, on the water and in the air.
Excelitas has been intimately involved in the defense and aerospace industry for over 50 years
and understands what it takes to get even the most complex project off the ground. From initial
design to deployment, Excelitas consistently delivers mission-critical solutions for demanding
defense and aerospace applications. Every product whether customized to exact customer
requirements or commercial off-the-shelf, is engineered to meet stringent performance
requirements and operate in extreme environments.
You can depend on us to provide high performance detectors, emitters, and modules that
will offer mission-critical performance and reliability to satisfy the demands of even the most
demanding defense or aerospace application. Contact us and let our proven heritage and 50
years of unequalled experience help get your next project off the ground.
Section 1 • detectorS
• Avalanche Photodiodes (APDs)
• PIN Diodes
• Photodiodes
Section 2 • emitterS
• Laser Diode
• Infrared Emitting Diode
Section 3 • moduleS
• SPCMs
Section 4 • Product PortFolio

Avalanche Photodiodes – Silicon and InGaAs APDs
Applications
• Laser range finder
• Free space communication
• Terminal guidance
• Spectrophotometers
• Fluorescence detection
• Scanning video imager
• Particle sizing
• Luminometer
Features and Benefits
• Low noise
• High gain
• High quantum efficiency
• Built-in TE-cooler option
• Various packaging and optical input options
• Application specific designs
Technical Specification
Avalanche Photodiodes – Silicon APDs
Unit
Active
Diameter
mm
C30817EH 0.8
C30872EH 3
C30884E
0.8
C30902BH 0.5
C30902BFCH 0.5
C30902BSTH 0.5
C30902EH 0.5
C30902SH 0.5
C30916EH 1.5
C30921EH 0.25
C30921SH 0.25
C30954EH 0.8
C30955EH 1.5
C30956EH 3
Capacitance
pF
2
10
4
1.6
1.6
1.6
1.6
1.6
3
1.6
1.6
2
3
10
Rise/Fall
Time
ns
2
2
1
0.5
0.5
0.5
0.5
0.5
3
0.5
0.5
2
2
2
Dark
Current
nA
50
100
100
15
15
15
15
15
100
15
15
50
100
100
Product description
These rear entry “reach-through” silicon APDs offer the best compromise in terms of cost and
performance for applications requiring high speed and low noise photon detection from 400 nm
up to 1100 nm. They feature low noise, high quantum efficiency and high gain while maintaining
reasonably low operating voltage. The active area varies from 0.5 mm to 3 mm to accommodate
a large variety of Defense and Security applications.
The “S” series of the C30902 family of APDs can be used in either their normal linear mode
(V R < V BR ) or as photon counter in the Geiger mode (V R > V BR ). Precise temperature control can
be achieved with a thermo electric cooler which can be used to improve noise and responsivity or
to maintain constant responsivity over a wide range of ambient temperature. High quantum
efficiency can be achieved from 1100 nm to 1700 nm with our InGaAs Avalanche Photodiodes.
They were designed to maintain high gain, high quantum efficiency and high bandwidth even with
their large area of up to 200 μm. The short distance between to window and the active area allows
easy interface with optical system.
Breakdown
Voltage
min
V
300
325
190
185
185
185
185
185
315
185
185
300
315
325
Breakdown
Voltage
max
V
475
500
290
265
265
265
265
265
490
265
265
475
490
500
Temperature
Coefficient
V/° C
2.2
2.2
1.1
0.7
0.7
0.7
0.7
0.7
2.2
0.7
0.7
2.4
2.4
2.4
PhotodiodeS For hiGh-PerFormAnce APPlicAtionS
4 www.excelitas.com
Typical
Gain
120
60
100
150
150
150
150
250
80
150
250
120
100
75
Responsivity
830 nm
A/W
77
77
77
77
128
77
128
Responsivity
900 nm
A/W
75
37
63
60
60
60
60
108
50
60
108
75
70
45
Responsivity
1060 nm
A/W
9
8
12
36
34
25
Avalanche Photodiodes
Silicon and InGaAs APDs
NEP
fW / √Hz)
1
30
13
3
3
3
3
0.9
20
3
0.9
13
14
25
Package
TO-5
TO-8
TO-5
Ball lens TO-18
FC receptale
ST receptale
TO-18, flat window
TO-18, flat window
TO-5
TO-18, flat window
TO-18, light pipe
TO-5
TO-5
TO-8

Product Table
Silicon APD – TE-Cooled
Active
Diameter
Unit mm
C30902SH-TC 0.5
C30902SH-DTC 0.5
C30954E-TC 0.8
C30954E-DTC 0.8
C30955E-TC 1.5
C30955E-DTC 1.5
C30956E-TC 3
www.excelitas.com
Active
Area
mm 2
0.2
0.2
0.5
0.5
1.8
1.8
7
Total
Capacitance
pF
1.6
1.6
2
2
3
3
10
TC stands for single stage cooler, operating temperature 0° C
DTC stands for double stage cooler, operating temperature -20° C
Product Table
InGaAs APD
Unit
Active
Diameter
µm
C30662EH 200
C30662ECERH 200
C30645EH 80
C30645ECERH 80
C30644EH 50
C30644ECERH 50
Graph 1
Capacitance
pF
2.5
2.5
1.25
1.25
0.6
0.6
Typical Spectral Responsivity @ 22º C
Responsivity (A/W)
1000
100
10
Rise/Fall Dark
Time Current
ns nA
0.5 2
0.5 1
2 50
2 50
2 100
2 100
2 100
BW
MHz
800
800
1000
1000
2000
2000
1
400 500 600 700 800 900 1000 1100
Wavelength (nm)
–– C30902EH, C30921EH –– C30902SH, C30921SH
Figure 3
Typical TO-8 Package*
Dark
Current
nA
70
70
35
35
25
25
Figure 1
Breakdown
Voltage
min
V
225
225
300
300
315
315
325
Breakdown
Voltage
min
V
40
40
40
40
40
40
Breakdown
Voltage
max
V
-
-
475
475
490
490
500
Breakdown
Voltage
max
V
90
90
90
90
90
90
Temperature
Coefficient
0.7
0.7
2.4
2.4
2.4
2.4
2.4
Package Drawing – TO-8 Flange
Figure 4
Ceramic Carrier
*Note: Package dimension for indication only. Exact package dimension can be found on products datasheets.
Typical
Gain
250
250
120
120
100
100
75
Temperature
Coefficient
V/°C
0.14
0.14
0.14
0.14
0.14
0.14
Responsivity
830 nm
A/W
128
128
-
-
-
-
-
Typical
Gain
10
10
10
10
10
10
Figure 2
Responsivity
900 nm
A/W
108
108
75
75
70
70
45
Responsivity
1550 nm
A/W
9.3
9.3
9.3
9.3
9.3
9.3
Responsivity
1060 nm
A/W
-
-
-
-
-
-
-
NEP
fW/sqrt(Hz)
100
100
25
25
15
15
Typical TO-5 Package*
Figure 5
Typical TO-18 Package*
Noise
Current
pA/sqrt(Hz)
0.04
0.02
0.2
0.04
0.2
0.05
0.2
Package
TO-8 flange
TO-8 flange
TO-8 flange
TO-8 flange
TO-8 flange
TO-8 flange
TO-8 flange
Package
TO-18
Ceramic carrier
TO-18
Ceramic carrier
TO-18
Ceramic carrier
Avalanche Photodiodes – Silicon and InGaAs APDs
5

Avalanche Photodiodes – Si APD Arrays
Applications
• LIDAR (Light Detection And Ranging)
• Particle detection
• Spot tracking and alignment systems
• Adaptive optics
• Spectroscopy
Features and Benefits
• High quantum efficiency
• Hermetically sealed packages
• Monolithic chip with minimal dead space
between elements
• Specific tailored wavelength response
• Application specific designs
• RoHS compliant available
Product Table
Avalanche Photodiodes – Si APD Arrays
Part Number
Unit
C30927EH-01
C30927EH-02
C30927EH-03
C30985E
Figure 1
Number
of Elements
mm
4
4
4
25
Package Drawing – C30927 Series
Photo Sensitive
Diameter
mm
1.5
1.5
1.5
0.3
Product description
C30927 series of quadrant Si Avalanche Photodiode and the C30985E multi-element APD array
utilize the double-diffused “reach-through” structure. This structure provides ultra high sensitivity
at 400 - 1000 nm.
The C30927 quadrant structure has a common avalanche junction, with separation of the quadrants
achieved by segmentation of the light entry p+ surface opposite the junction. With this design, there
is no dead space between the elements and therefore no loss of response at boresight.
The C30927EH-01, -02 and -03 are optimized for use at wavelengths of 1060, 900, and 800 nm
respectively. Each device type will provide high responsivity and excellent performance when
operated within about 50 nm of the specified wavelength.
The C30985E is a 25 element monolithic linear APD array having a high inter-electrode resistance
with a 75 μm dead space between the elements. Packages have a common ground and bias with a
separate lead for each element output.
Responsivity
A/W
15(@ 1060 nm)
62(@ 900 nm)
55(@ 800 nm)
31(@ 900 nm)
Figure 2
Dark Current
per Element
nA
25
25
25
1
PhotodiodeS For hiGh-PerFormAnce APPlicAtionS
Spectral Noise
Current
pA/√Hz
0.5
0.5
0.5
0.1
Package Drawing – C30985E
15.24
(0.600)
Capacitance
@ 100 KHz
pF
1
1
1
0.5
Avalanche Photodiodes Si APD Arrays
Response Time
ns
3
3
3
2
NEP
fW /√Hz)
33(@ 1060 nm)
16(@ 900 nm)
9(@ 800 nm)
3(@ 900 nm)
NEP
V
275 - 425
275 - 425
275 - 425
250 - 425
6 www.excelitas.com
15.24
(0.600)

Graph 1
Spectral Responsivity Characteristics
Typical Responsivity (A/W)
100
10
1060 nm NIR Enhanced Si APDs
Applications
• Range finding
• LIDAR (Light Detection And Ranging)
• YAG laser detection
Features and Benefits
• High quantum efficiency at 1060 nm
• Fast response time
• Wide operating temperature range
• Low capacitance
• Hermetically sealed packages
• Application specific designs
• RoHS compliant available
1
300 400 600 800 1000 1200 1400
–– C30954EH –– C30955EH –– C30956EH
www.excelitas.com
Wavelength (nm)
Product description
The C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche
photodiodes made using a double-diffused “reach-through” structure. The design of these
photodiodes are such that their long wave response (i.e. >900 nm) has been enhanced
without introducing any undesirable properties.
These APDs have quantum efficiency of up to 40 % at 1060 nm. At the same time, the diodes
retain the low noise, low capacitance, and fast rise and fall times characteristics.
To help simplify many design needs, these APDs are also available in Excelitas’ highperformance
hybrid preamplifier module type C30659 series, as well as the preamplifier and
TE cooler incorporated module type LLAM series. Please refer to the respective sections in
this catalog.
Product Table
Si APDs – NIR Enhanced
Part Number
Photo
Sensitive
Diameter
Unit mm
C30954EH 0.8
C30955EH 1.5
C30956EH 3.0
Figure 1
PhotodiodeS For hiGh-PerFormAnce APPlicAtionS
Responsivity
@ 1060 nm
A/W
36
34
25
Dark
Current
nA
50
100
100
Package Drawing – C30954EH, C30955EH
Spectral
Noise
Current
pA/√Hz
0.5
0.5
0.5
Figure 2
Capacitance
@ 100 KHz
pF
2
3
10
Avalanche Photodiodes
1060 nm NIR Enhanced Si APDs
Response
Time
ns
2
2
2
NEP @
1060 nm
fW /√Hz)
14
15
20
Package Drawing – C30956EH
Vop
Range
V
275 - 425
275 - 425
275 - 425
7

Large Area Si-APDs – UV-Enhanced APDs
Applications
• Radiation detection
• Environmental monitoring
• Fluorescence detection
• High energy physics
• Particle physics
• Instrumentation
Features and Benefits
• High quantum efficiency
• Low dark currents
• Easy coupling to scintillator crystals
• Immunity to electromagnetic fields
• Short wavelength enhanced responsivity
• Custom packaging available
• Excellent timing resolution
• Application specific designs
• RoHS compliant available
Product Table
Large Area Si-APDs – UV-Enhanced APDs
Photo
Sensitive
Part Number Diameter
Unit mm
C30626FH 5 x 5
C30703FH
C30739ECERH
10 x 10
5.6 x 5.6
PhotodiodeS For hiGh-PerFormAnce APPlicAtionS
Responsivity
8 www.excelitas.com
A/W
22
(@900 nm)
16
(@530 nm)
20
(@430 nm)
Dark
Current
nA
250
10
50
Spectral
Noise
Current
pA/√Hz
0.5
0.7
1.4
Large Area Si-APDs – UV-Enhanced APDs
Product description
The C30739ECERH Silicon Avalanche Photodiode (APD) is intended for use in a wide variety
of broadband low light level applications covering the spectral range from below 400 to over
700 nanometers. It has low noise, low capacitance and high gain. It is designed to have an enhanced
short wavelength sensitivity, with quantum efficiency of 60 % at 430 nm.
The standard ceramic carrier package allows for easy handling and coupling to scintillating crystals
such as LSO and BGO.
The C30626FH and C30703FH series are large area Si APDs in flat pack packages for either direct
detection or easy coupling to scintillator crystals.
The C30626 uses a standard reach through structure and has peak detection at about 900 nm. The
C30703 is enhanced for blue wavelength response and has peak quantum efficiency at ~ 530 nm.
These APDs are packaged in square flat pack with or without windows or on ceramics. The nowindow
devices can detect direct radiation of X-rays and electrons at the energies listed, and the
windowed packages are best for easy scintillator coupling.
Graph 1
Quantum Efficiency vs. Wavelength
Quantum Efficiency (%)
100
80
60
40
20
0
340 380 420 460 500 600 700 800 900 1000 1100
Wavelength (nm)
–– C30700-100 –– C30700-200 –– C30626
Graph 2
Capacitance
@ 100 KHz
pF
30
120
60
Response
Time
ns
5
5
2
NEP
fW/√Hz)
23
(@900 nm)
40
(@530 nm)
Quantum Efficiency vs. Wavelength
Quantum Efficiency (%)
90
70
60
50
40
-
Vop
Range
V
275 - 425
275 - 425
275 - 425
30
350 400 450 500 550 600 650 700 750
–– C30739 series
Wavelength (nm)

Product Table
C30737 Epitaxial Silicon APD – C30724 Low Gain APD
Part Number
Unit
C30737EH-230-80
C30737PH-230-80
C30737LH-230-80
C30737LH-230-81
C30737EH-500-80
C30737PH-500-80
C30737LH-500-80
C30737LH-500-81
C30737EH-230-90
C30737PH-230-90
C30737PH-230-90
C30737PH-230-92
C30737EH-500-90
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
C30724EH
C30724PH
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Package
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
LCC
LCC
TO
T-1¾
Optical
Bandpass
Filter
design
nm
-
-
-
635
-
-
-
635
-
-
-
905
-
-
-
905
-
-
Active
Area
Diam.
design
µm
230
230
230
230
500
500
500
500
230
230
230
230
500
500
500
500
500
500
Electrical Characteristics at TAmbient = 22 °C; at operating voltage, Vop
Peak
Sensitivity
Wavelength
typ
λpeak
nm
800
800
800
635
800
800
800
800
900
900
900
905
900
900
900
905
920
920
Product description
The Excelitas C30737 series silicon APDs provide high responsivity between 500 nm and 1000 nm,
as well as extremely fast rise times at all wavelengths with a frequency response above 1 GHz. The
C30724 as a low gain APD can be operated at fixed voltage without the need of a temperature
compensation.
Standard versions are available in two active area sizes: 0.23 and 0.5 mm diameter. They are offered
in the traditional hermetic TO housing (“E”), in cost effective plastic through-hole T-1¾ (TO-like,
“P”) packages, and in leadless ceramic carrier (LCC, “L”) package for surface mount technology.
All listed varieties are ideally suited for high-volume, low cost applications.
Customization of these APDs is offered to meet your design challenges. Operation voltage selection
and binning or specific wavelength filtering options are among many of the application specific
solutions available.
Breakdown
Voltage
min max
VBR
V
120
120
120
120
120
120
120
120
180
180
180
180
180
180
180
180
-
-
VBR
V
200
200
200
200
200
200
200
200
260
260
260
260
260
260
260
260
350
350
Temp. Coeff.
Of VOP , for
Constant M
typ
V / ˚C
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
-
-
PhotodiodeS For hiGh-PerFormAnce APPlicAtionS
C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD
Applications
• Laser range finding for 600 to 950 nm range
• Optical communication
• Analytical instrumentation
Features and Benefits
• Optimized versions for 900 and 800 nm
peak sensitivity
• Standard versions with 500 and 230 μm
active diameter
• High gain at low bias voltage
• Low breakdown voltage
• Fast response, tR ~ 300 ps
• Low noise, in ~ 0.2 pA/√Hz
• Application specific designs
Gain@
λpeak
typ
M
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
15
15
Responsivity
@ λpeak
typ
M
50
50
50
35
50
50
50
35
60
60
60
60
60
60
60
60
8.5
8.5
Total Dark
Current (Bulk
+ Surface)
typ max
ID
nA
2.5
2.5
2.5
2.5
5
5
5
5
2.5
2.5
2.5
2.5
5
5
5
5
20
20
ID
nA
10
10
10
10
20
20
20
20
10
10
10
10
20
20
20
20
40
40
Right: TO-C30737PH Series
T-1¾ (TO-like) Through-Hole
Package (4.9 mm Diameter)
Left: C30737LH Series
Leadless Ceramic Carrier
Package (3 x 3 mm2 )
Noise Current,
(f = 10 kHz,
Δf=1 Hz)
pA / √Hz
0.1
0.1
0.1
0.1
0.3
0.3
0.3
0.3
0.2
0.2
0.2
0.2
0.4
0.4
0.4
0.4
0.1
0.1
Capacitance
typ
CD
pF
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.0
0.6
0.6
0.6
0.6
1.0
1.0
1.0
1.0
1.0
1.0
Rise & Fall Time,
(RL = 50 Ω, 10%-
90% - 10% Points)
typ
ns
0.22
0.22
0.22
0.22
0.30
0.30
0.30
0.30
0.50
0.50
0.50
0.50
0.60
0.60
0.60
0.60
5
5
9

InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
Applications
• Missile guidance
• Laser warning system
• Spot tracking
• Laser range finders
• Instrumentation
• Photometry
• Laser power monitoring
• Fiber optic test equipment
• High speed switching
Features and Benefits
• High speed
• High responsivity
• Hermetically sealed
• Large area available
• High shunt resistance, low dark current
• Application specific designs
Product Table
InGaAs PIN, High Speed, Peak Wavelength at 1550 nm
Unit
Active
Diameter
µm
C30616ECERH 50
C30617BH
100
C30617BFCH 100
C30617BSCH 100
C30617BSTH 100
C30617ECERH 100
C30618BFCH 350
C30618GH
350
C30618ECERH 350
C30637ECERH 75
Responsivity
Peak
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Capacitance
pF
0.35
0.8
0.8
0.8
0.8
0.6
4
4
4
0.4
Product description
Silicon PIN photodiodes are available in a wide variety of active area to accommodate a large variety
of applications. The PIN structure allows high quantum efficiency and fast response for detection of
photon in the 400 nm to 1100 nm range.
The YAG series offers an exceptional 0.4 A/W at 1060 nm by using a thick silicon material. Designed
with a guard ring to collect current generated outside of the active area, they are the detectors of
choice when the entire chip is illuminated by reducing unwanted carriers responsible for noise.
Precise beam positioning can be achieved by using our quadrant detectors. They are designed with
4 pie-shaped quadrant sections from doping process thus reducing to almost zero the “dead” space
between each quadrant. Each quadrant is connected to an isolated lead.
The C30741 provide fast response and good quantum efficiency in the spectral range between
300 nm to 1100 nm. Designed for high-speed, high-volume production and cost sensitive
applications, these photodiodes are offered in plastic package, either TO style or SMD packages
with a visible blocking filter option.
Our UV series are high quality Si PIN photodiode in hermetically sealed TO package designed for
the 220 nm to 1100 nm wavelength region with enhanced operation in the UV range. Low noise
detection is achieved by operating the UV series in photovoltaic mode (0V bias ).
The InGaAs PIN detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature
low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and
uniformity within 2 % across the detector active area.
BW
GHz
3.5
3.5
3.5
3.5
3.5
3.5
0.75
0.75
0.75
3.5
Dark Current
nA

Product Table
InGaAs PIN, Large Area, Peak Wavelength at 1550 nm
Unit
Active
Diameter
mm
C30641EH-TC 1
C30641EH-DTC 1
C30641GH
1
C30642GH
2
C30665GH
3
C30723GH
5
C30619GH
0.5
Product Table
Silicon PIN
Unit
C30741PH-15S
C30741PFH-15S
C30807EH
C30808EH
C30822EH
C30809EH
C30810EH
C30971EH
FFD-100H
FFD-200H
FND-100QH
UV-040BQH
UV-100BQH
UV-215BGH/340
UV-215BQH
UV-245BGH
UV-245BQH
YAG-100AH
YAG-200H
YAG-444AH
SR10BP
SR10BP-B
SR10DE
SR10DE-B
PFD10
CR50DE
Product Table
Unit
C30845EH
YAG-444-4AH
DTC-140H
Active
Diameter
um
1.5 x 1.5
1.5 x 1.5
www.excelitas.com
1
2.5
5
8
11
0.5
2.5
5.0
2.5
1.0
2.5
0.0
5.5
5
5
2.5
5.0
16.0
Specialty Silicon Detectors
Description
Quadrant PIN
Quadrant PIN
Dual wavelength
detector Si-Si
(Top/Bottom)
Responsivity
Peak
A/W
0.95
0.95
0.95
0.95
0.95
0.95
0.95
Active Area
mm 2
2.25
2.25
0.8
5
20
50
100
0.2
5.1
20
5.1
0.81
5.1
23.4
18.5
18.5
5.1
20
200
0.65
0.65
0.56 x 0.56
6.71
0.31
Active
Diameter
mm
8
11.3
3.5
Responsivity
Peak
A/W
0.47
0.47
0.6
0.6
0.6
0.6
0.6
0.5
0.6
0.6
0.64
0.62
0.62
0.62
0.62
0.62
0.7
0.7
0.7
0.6
0.5
Capacitance
pF
40
40
40
150
200
950
8
Peak
Wavelength
nm
800
800
900
900
900
900
900
830
850
850
920
900
900
Active Area
mm 2
50
100
9.9
900
900
900
1000
1000
1000
900
900
880
880
Shunt
Resistance
Mega Ohm
50
50
50
25
10
5
250
Capacitance
pF
8/q
9/q
300/300
Capacitance
pF
11
11
2.5
6
17
35
70
1.6
8.5
30
8.5
25
150
700
630
630
2.5
6
35
10
10
4
4
25
2.5
BW
MHz
75
75
75
20
3
3
350
Rise/Fall
Time
ns
2
2
5
8
10
15
20
0.5
3.5
5
500
- >100
-
- >50
- >75
- >75
100
>100
>200
>125
>125
150
-
-
-
-
-
-
>200
>200
>200
170
170
170
170
170
50
Responsivity
900 nm
A/W
0.6
0.6
0.6/0
Operating
Voltage
V
0-5
0-5
0-5
0-5
0-5
0-5
0-10
Operating
Voltage
V
10
10
45
45
45
45
45
100
15
15
100
0
0
0
0
0
0
180
180
180
Responsivity
1060 nm
A/W
0.17
0.5
0.25 / 0.15
Package
TO-8, flange, TE-cooled
TO-8, flange, dual TE
TO-18
TO-5
TO-5
TO-5
TO-18
Package
Plastic T-1¾ through-hole
T-1¾ visible blocking
TO-18
TO-5
TO-8
TO-8
TO-36
TO-18
TO-5
3 pin, 0.6 inch dia.
TO-5
TO-5, response down to 200 nm
TO-5, response down to 200 nm
TO-5, response down to 250 nm
TO-5, response down to 200 nm
TO-5, response down to 250 nm
TO-5, response down to 200 nm
TO-5
TO-8
TO-36
SMT
SMT
SMT
SMT
SMT
Noise
Current
pA/sqrt(Hz)
0.26/q
0.2/q
0.033 /
0.133
Package
TO-8
Custom
Custom
InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced
11

Si PIN and APD Modules – InGaAs APD Modules
Applications
• Laser range finder
• Video scanning imager
• High speed analytical instrumentation
• Free space communication
• UV light sensing
• Distributed temperature sensing
Features and Benefits
• Ultra low noise
• High speed
• High transimpedance gain
Product Table
Si PIN and APD Modules – InGaAs APD Modules
Unit
C30659-900-R5BH
C30659-900-R8AH
C30659-1060-R8BH
C30659-1060-3AH
C30659-1550-R08BH
C30659-1550-R2AH
C30919E
C30950EH
LLAM-1550-R2AH
LLAM-1060-R8BH
HUV-1100BGH
HUV-2000BH
Detector
C30902
C30817
C30954
C30956
C30645
C30645
C30817
C30817
C30662
C30954
UV-100
UV-215
Active Area
mm 2
0.5
0.8
0.8
3
80 μm
200 μm
0.8
0.8
0.2
0.8
2.5
5.4
Product description
These modules comprise of a photodetector (PIN or APD) and a transimpedance amplifier in the
same hermetically sealed package. Having both amplifier and photodetector in the same package
allows low noise pickup from the surrounding environment and reduces parasitic capacitances from
interconnect allowing lower noise operation.
The hybrid amplifier C30659 series includes an APD connected to a low noise transimpedance
amplifier. 4 models are offered with Silicon APD and 2 models with InGaAs APD. Standard
bandwidth of 50 MHz and 200 MHz can accommodate a wide range of applications. Two C30659
models are offered with the APD mounted on a Thermo-electric cooler (the LLAM series) to help
improving noise or to keep the APD at constant temperature regardless of the ambient temperature.
The C30659 can be customized to meet application specific requirements by using one of the
Excelitas rear entry APDs, by choosing a custom bandwidth or by qualifying it to your environmental
conditions. Pigtailed versions are also available in a 14 pins DIL package allowing nearly 100 %
coupling efficiency.
The C30950EH offers a low cost alternative to the C30659. The amplifier is designed to neutralize
the input capacitance of a unity voltage gain amplifier. The C30919E uses the same architecture of
the C30950EH with the addition of a high voltage temperature compensation circuit which maintain
module responsivity constant over a wide temperature range.
Two HUV modules are offered with a PIN detector for low frequency high gain application, covering
a broad spectrum range from the UV to the near IR. All optical receiver products can be qualified to
meet the most demanding environmental specification as described in MIL-PRF-38534.
Bandwidth
MHz
200
50
200
50
200
50
40
50
50
200
1 kHz
1 kHz
Responsivity,
830 nm
kV/W
460
2700
-
-
-
-
-
520
-
-
-
-
Responsivity,
900 nm
kV/W
400
3000
370
450
90 @ 1550 nm
340 @ 1550 nm
1000
560
340 @ 1550 nm
370
130 MV/W
130 MV/W
Responsivity,
1060 nm
kV/W
-
-
200
280
-
-
250
140
-
200
-
-
moduleS And oPticAl receiverS
12 www.excelitas.com
NEP
fW /√Hz
35
14
55
55
220
130
20
27
130
55
30
70
Si PIN and APD Modules,
InGaAs APD Modules
Output
Voltage Swing,
50 Ohm
V
0.9
0.9
0.9
0.9
0.9
0.9
0.7
0.7
0.9
0.9
5 min
5 min
Package
TO-8
TO-8
TO-8
TO-8
TO-8
TO-8
TO, 1 in
TO-8
TO-8 flange
TO-8 flange
Custom
Custom

Selected Photodiodes and Infrared Emitting Diodes (IREDs)
Applications
• Electro-optical detection of air borne
particulates
Features and Benefits
• High quality components: photodiodes, IREDs
(UL- listed)
• Binning for optimized transfer function
• Customized optical block (PD+IRED) assemblies
• Smoke chamber assemblies according specified
transfer function
Product Table
Selected Photodiodes Used in Smoke Detection Applications
Symbol
Unit mm
VTP7840H Lensed sidelooker IRT 5.27
VTP413H
Lensed sidelooker 7.45
VTP100H
Flat sidelooker IRT 7.45
VTP1188SH Lensed ceramic
11
www.excelitas.com
Package Active Area
Product description
An electro-optical smoke detector consists of an Infrared LED (IRED) and Photodiode (PD)
assembly, which exhibits a signal under the presence of smoke in the detection volume (smoke
chamber). Signal range under smoke and clean-air conditions and their long term stability are
key features of a smoke detector module. Excelitas offers IRED and PD components as well as
customized assemblies with specified signal level range. Such an assembly can be an optical block
containing an IRED and PD for (SMD) board soldering or the complete smoke chamber, which
are produced in high volumes.
Short Circuit
Current Dark Current
min
max
ISC
µA
50
120 (typ)
35
200 (typ)
Product Table
IO
nA
20
30
30
30
Junction
Capacitance
typ
CJ
nF
40
50
50
300
Radiometric
Sensitivity @ λP
typ
SR
A/W
0.55
0.55
0.5
0.55
Spectral Range
λRANGE
nm
725-1150
400-1150
725-1150
400-1100
Peak
Wavelength
λP
nm
925
925
925
925
Selected Infrared LEDs (IREDs) Used in Smoke Detection Applications
Symbol
Unit
VTE1291-1H
VTE1291-2H
VTE1295
PhotodiodeS & -trAnSiStorS For hiGh-volume APPlicAtionS
Package Total Power Test Current
typ
typ
T-1¾ lensed
T-1¾ lensed
T-1¾ lensed
PO
mW
20
25
20
IFT
mA (pulsed)
100
100
100
Photodiodes and IREDs
Forward Drop
Voltage
@ IFT
VF
V
1.5
1.5
1.5
Noise Equivalent
Power
typ
NEP
W/√Hz
5.3 x 10-14
2.3 x 10-14
2.5 x 10-14
-
Half Power Beam
Angle
typ
Θ1/2
degree
±12
±12
±8
13

Photodiode Arrays – VTA Series
Applications
• Non invasive personnel scanning
• Cargo & container scanning
• Non-destructive testing
Features and Benefits
• Various crystal types available (CsI, GOS, etc.)
• Custom chip geometry & pitch
• Single or dual-sided assemblies
• High responsivity and low capacitance
• Onboard electronics available on a custom basis
• Multiple photodiode rows
Product Table
Photodiode Arrays • VTA Series
Symbol
Unit
VTA2164H- D- NC- 00- 0
VTA1616H- H- SC- 01- 0
VTA1616H- L- SC- 02- 0
VTA2516H- H- SC- 01- 0
VTA2516H- L- SC- 02- 0
VTA1216H- H- NC- 00-0
VTA1216H- L- NC- 00-0
VTA0832H- H- NC- 00-0
Electrical characteristics at TAmbient = 25 °C
Substrate
Active
Area
Photodiode ArrAyS For x-rAy Security ScAnninG
Left: 16 Element, 1.6 mm Pitch
Photodiode Array With Segmented
Csi Scintillator.
Right: 16 Element, 2.5 mm Pitch
Photodiode Array With GOS Low
Energy Screen Scintillator.
Product description
These photodiode arrays are used to generate an X-ray image by scanning an object line by line.
The X-rays are converted into light through the attached scintillator crystal. The light intensity
is then measured by the photodiodes. The boards are employing chip-on-board technology with
optically adapted scintillator crystals. The listed designs can be ordered as a standard part, but can
also be customized to meet the needs of a wide variety of applications. Excelitas custom photodiode
arrays give customers the option to choose the:
• active photodiode area
• total number of elements
• overall PCB and photodiode chip dimensions
• photodiode chip geometry and orientation
• electro-optical specifications
• single sided vs. double sided PCB
• alternative substrate materials (e.g. ceramic)
• electrical interface (e.g. connector)
First stage amplification electronics can also be added to the custom board design to convert the
current generated by the photodiode into an easy to measure voltage.
Photodiode
Chip Dimensions
Dark Current
@ H = 0,
VR = 10 mV
Material Dimensions Design Design
typ max
FR4
FR4
FR4
FR4
FR4
FR4
FR4
FR4
ID ID
mm mm mm mm %
2 pA pA
43.2 x 67.7
8.0 x 25.4
16.0 x 25.4
8.0 x 40.0
16.0 x 40.0
10.2 x 19.0
17.8 x 19.0
17.8 x 25.4
1.41
2.58
2.58
5.20
5.20
3.44
3.44
0.50
1.40 x 3.50
1.51 x 3.25
1.51 x 3.25
2.45 x 3.15
2.45 x 3.15
2.30 x 4.95 (dual cell)
2.30 x 4.95 (dual cell)
1.59 x 2.34 (dual cell)
Pitch
2.1
1.6
1.6
2.5
2.5
1.2
1.2
0.8
14 www.excelitas.com
Number
of
Elements
64
16
16
16
16
16
16
32
Scintillator
Crystal
Type
Custom
CsI
GOS
CsI
GOS
Custom
Custom
Custom
Light Current
Uniformity
@ 540 nm,
30 nW/cm 2
±5
±5
±5
±5
±5
±5
±5
±5

Figure 1
Side 1 Detail VTA2164H-D
Figure 2
Side 2 Detail VTA2164H-D
Figure 3
Chip Spacing Details, Side 1 (Typ) VTA2164H-D
www.excelitas.com
ø
Photosensitive Area 0.0545“ x 0.0385 (Typ.) or 0.0021 SQ. IN.
D32
D1
Pin Out VTA2164H-D
Figure 4
Connector J1
(Top Diodes)
Pin Connection
1 D1
2 D2
3 D3
4 D4
5 D5
6 D6
7 D7
8 D8
9 D9
10 D10
11 D11
12 D12
13 D13
14 D14
15 D15
16 D16
17 D17
18 D18
19 D19
20 D20
21 D21
22 D22
23 D23
24 D24
25 D25
26 D26
27 D27
28 D28
29 D29
30 D30
31 D31
32 D32
33 N / C
34 Common
Connector J2
(Bottom Diodes)
Pin Connection
1 D1
2 D2
3 D3
4 D4
5 D5
6 D6
7 D7
8 D8
9 D9
10 D10
11 D11
12 D12
13 D13
14 D14
15 D15
16 D16
17 D17
18 D18
19 D19
20 D20
21 D21
22 D22
23 D23
24 D24
25 D25
26 D26
27 D27
28 D28
29 D29
30 D30
31 D31
32 D32
33 N / C
34 Common
Pos. of Top Diodes Rel. to Bottom Diodes VTA2164H-D
(Optical Center Line to Optical Center Line)
Photodiode Arrays – VTA Series
15

Pulsed Laser Diodes – PGA – PGEW Series
Applications
• Range finders
• Height of burst
• Proximity fuze
Features and Benefits
• Multi cavity lasers concentrate
emitting source size
• Quantum well structure
• High peak pulsed power into aperture
• Excellent power stability with temperature
• Eye safe compliant
• Application specific designs
Product Table
PGA Pulsed Laser Family Selection Table, Typ. Wavelength 905 nm, 5 mm Spectral Width
Device
(X = pkg)
(H = RoHS
Compliance)
PGAx1S03H
PGAx1S09H
DPGAx1S03H
DPGAx1S09H
TPGAx1S03H
TPGAx1S09H
QPGAx1S03H
QPGAx1S09H
TPGAx2S03H
TPGAx2S09H
QPGAx2S03H
QPGAx2S09H
QPGAx3S03H
QPGAx3S09H
# of
Chips
1
1
1
1
1
1
1
1
2
2
2
2
3
3
Description
Total # of
Emitting
Stripes
1
1
2
2
3
3
4
4
6
6
8
8
12
12
Emitting Area
Width
µm
75
225
75
225
75
225
75
225
75
225
75
225
75
225
Height
µm
1
1
5
5
10
10
15
15
175
175
225
225
450
450
PulSed lASer diodeS And inFrAred ledS (iredS)
Pulsed Laser Diodes
PGA – PGEW Series
Product description
Pulsed semiconductor lasers in the near IR are commonly used for long distance time-of-flight or
phase-shift range finder systems. Excelitas offers a broad range of suited pulsed 905 nm lasers.
Lasers designs include multi cavity monolithic structures with up to 4 active areas per chip resulting
in up to 100 W of peak optical output power. Physical stacking of laser chips resulting in up to 300 W
of peak optical output power.
Chip on board assemblies are available for hybrid integration. A selection of 6 metal, hermetically
sealed package types are available for harsh environment applications. A molded epoxy resin TO-18
type package is available for high-volume applications.
Critical parameters are pulse-width and rise/fall times. The pulse width may be reduced allowing for
increased current drive and resulting in higher peak optical power. Quantum well laser design offers
rise and fall times of < 1 ns however the drive circuit lay out and package inductance play the greater
role and should be designed accordingly. Excelitas offers a variety of package types with different
inductive values to assist to this end.
Typical Peak
Power at
10 A, 100 ns
75 µm (3 mils)
Stripe Width
8 W
15 W
23 W
33 W
45 W
65 W
95 W
Typical Peak
Power at
30 A, 100 ns
225 µm (9 mils)
Stripe Width
30 W
50 W
75 W
100 W
150 W
200 W
300 W
Beam Spread
Parallel
to Junction
(FWHM)
16 www.excelitas.com
ΘII
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Beam Spread
Perpendicular
to Junction
(FWHM)
Θ┴
25
25
25
25
25
25
25
25
25
25
25
25
25
25
Typical
Temperature
Coefficient
nm / ° C
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
”S“
Metall Can
TO-18
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
✓
Preferred
Packages
”W“ Plastic
Encapsulated
TO-18
✓
✓
✓
✓
✓
✓
✓
✓

Graph 1
Peak Radiant Intensity vs. Temperature
Relative Radiant Intensity (%)
110
100
90
80
70
60
50
40
30
20
10
0
Graph 3
-50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100
Spectral Plot Distribution
Relative Radiant Intensity (%)
100
50
Graph 5
www.excelitas.com
Temperature (Degrees)
1
880 905
930
Wavelength (nm)
Safe Operation Region (Plastic Encaps.)
Relative Radiant Intensity (%)
1000
100
10
0
10 100 1000
Pulse Width at FWHM (ns)
QP6EW currently being verified.
Figure 1
Safe operating region
Graph 2
Radiant Intensity vs. F Number
Relative Radiant Intensity (%)
100
10
Graph 4
Graph 6
1
0 1 10 100
F Number
Radiant Intensity vs. Pulse Width for Safe Operation
Relative Radiant Intensity (%)
1000
100
10
1 10 100 1000
Pulse Width at fwhm (ns)
Center Wavelength vs. Temperature
Center Wavelength (nm)
Package Drawing Package S (TO-18)
920
915
910
905
900
895
890
885
880
Safe operating region
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Temperature (Degrees)
Pin out
1. LD Anode (+),
2. LD Cathode (-) Case,
Inductance 5.2 nH
Pulsed Laser Diodes – PGA – PGEW Series
17

Figure 2
Package Drawing
Figure 3
Housing / Package Drawing • Laser Chip on Board
Figure 4
Package Drawing
Figure 5
Package Drawing
Figure 6
Housing / Package Drawing • TO-18-“W“ Plastic Package (1S Devices Only)
Package U (5 mm CD)
Package Y (Chip on Carrier)
Package C (8 – 32 Coax)
Package R (9 mm CD)
Package W (TO-18 Plastic)
Pin out
1. LD Anode (+),
2. NC,
3. LD Cathode (-) Case,
Inductance 5.0 nH
Pin out
1. LD Cathode (-)
chip bottom,
2. LD Anode (+)
chip top,
Inductance 1.6 nH
Pin out
1. LD Anode (+),
2. LD Cathode (-) Case,
Inductance 12 nH
Pin out
1. LD Anode (+),
2. NC,
3. LD Cathode (-) Case,
Inductance 6.8 nH
Pin out
1. (Pkg Flat)
LD Anode (+),
2. LD Cathode (-),
Inductance 5.0 nH
18 Pulsed Laser Diodes – PGA – PGEW Series
www.excelitas.com

Product Table
Infrared Emitting Diodes (IREDs) – VTE
Part Number
Symbol
Infrared Emitting Diodes (IREDs) – VTE
Applications
• Position sensors
• Safety shields
• Encoders – measure speed and direction
Features and Benefits
• End and side radiating configurations
• Selection of emission angle spread using
molded lenses
• Narrow band of emitted wavelengths
• Minimal heat generation
• Low power consumption
Unit
VTE1013H
VTE1063H
VTE1113H
VTE1291-1H
VTE1291-2H
VTE1291W-1H
VTE1291W-2H
VTE1295H
VTE3322LAH
VTE3324LAH
VTE7172H
VTE7173H
CR10IRD
CR50IRDA
CR50IRH
CR50IRK
www.excelitas.com
Package
TO-46
TO-46
TO-46
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1¾ (5 mm)
T-1 (3 mm)
T-1 (3 mm)
Lateral 4.57 x 1.65 mm
Lateral 4.57 x 1.65 mm
SMD
SMD
SMD
SMD
Ee typ.
mW/cm2 Irradiance
2.7
5.0
15
3.3
6.5
1.6
3.3
5.5
1.3
2.6
0.6
0.8
-
-
-
-
Distance
mm
36
36
36
36
36
36
36
36
10.16
10.16
16.7
16.7
-
-
-
-
Product description
IREDs are solid state light sources emitting in the near infrared part of the spectrum. The emission
wavelength is closely matched to the response peak of silicon photodiodes and phototransistors.
The product line provides a broad range of mounting lens and power output options. Both end and
side radiating cases are available. Wide arrays of emission beam profiles are available. Devices may
be operated in either CW or pulsed operating modes.
IREDs can be combined with Excelitas detectors or phototransistors in integrated assemblies for
optoisolators, optical switches and retro sensors. Optical isolators are useful when electrical isolation
is required, for example to transmit control logic signals to high power switching circuits (which can
be noisy). In an optical switch an object is detected when it passes between the IRED and detector/
phototransistor. In a retro sensor an object is detected when the IRED emitted beam is reflected
onto the detector/photodetector. The retro sensor is used in applications were the object changes
the reflectance.
Diameter
mm
6.4
6.4
6.4
6.4
6.4
6.4
6.4
6.4
2.1
2.1
4.6
4.6
-
-
-
-
Radiant
Intensity
Ie min.
mW/sr
27
49
156
32
65
16
32
39
1.0
2.0
1.1
1.7
-
-
-
-
Total
Peak Power
PO
mW
30
80
30
20
25
20
25
20
1.5
2.5
2.5
5.0
6.3
20
10.6
11.4
PulSed lASer diodeS And inFrAred ledS (iredS)
Forward Test
Current
CW • / Pulsed •
mA
1000 •
1000 •
1000 •
100 •
100 •
100 •
100 •
100 •
20 •
20 •
20 •
20 •
50 •
50 •
50 •
50 •
Forward
Voltage Drop
Vf max
V
2.5
3.5
2.5
2.0
2.0
2.0
2.0
2.0
1.6
1.6
1.8
1.8
2.05
1.8
1.85
1.7
Infrared Emitting Diodes (IREDs) VTE
Max Pulsed
Forward Current
IF max
mA
3000
3000
3000
2500
2500
2500
2500
2500
3000
3000
2500
2500
800
800
800
800
Wavelength
nm
940
880
940
880
880
880
880
880
940
940
880
880
770
870
870
950
Beam Angle
FWHM
Θ ½
Degrees
±35
±35
±10
±12
±12
±25
±25
±8
±10
±10
±25
±25
-
±90
±90
±90
19

Graph 1
On Axis Rel. Irradiance T-1/Lateral Packages
Relative Output (%)
100
10
1
0.1
0.1 1 10 100
Detector – Emitter Spacing (mm)
Figure 1
Figure 2
Figure 3
Graph 2
On Axis Relative Irradiance
Relative Output (%)
100
10
1
0.1
0.1 1 10 100
Detector – Emitter Spacing (mm)
Graph 3
Relative Radiant Output Power (%)
100
0
90 60 30 0 30 60 90
Angle off Optical Axis
–– VTE337XA –– VTE717X –– Inverse Square –– VTE106X –– VTE1281 / VTE1285 –– VTE 116X –– VTE1285 –– VTE1281 –– VTE 1281W –– VTE 1281F
.100 NOM.
(2.54)
Angular Emission
Housing / Package Drawing – VTE1291 VTE1291H
Housing / Package Drawing – VTE1113H VTE1113H
Housing / Package Drawing – VTE7172 VTE7172H
Narrow beam angle
T-1¾ bullet package
TO-46 lensed cap
Molded lateral package
20 Infrared Emitting Diodes (IREDs) – VTE
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50

Applications
• Astronomical observation
• Optical range finding
• Quantum cryptography
• Photon correlation spectroscopy
• Adaptive optics
• Ultra sensitive fluorescence
• Particle sizing
Features and Benefits
• Peak photon detection efficiency at 650 nm:
65 % typical
• Active area: 180 μm diameter
• Gated output
• Single +5 V supply
• FC receptacle option for fiber coupling
• EU RoHS compliant
• Array of 4 channels available
Graph 1
Characteristics SPCM Series
Photon Detection Efficiency (Pd)
80
70
60
50
40
30
20
10
Single Photon Counting Modules – SPCM
0
300 500 700 900 1100
Wavelength (nm)
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Single Photon
Counting Modules
(SPCM)
Product description
SPCM-AQRH is a self-contained module that detects single photons of light over the 400 nm
to1060 nm wavelength range – a range and sensitivity that often outperforms a photomultiplier tube.
The SPCM-AQRH uses a unique silicon avalanche photodiode (SLiK®) with a circular active
area that achieves a peak photon detection efficiency of more than 65 % at 650 nm over a
180 μm diameter.
The photodiode is both thermoelectrically cooled and temperature controlled, ensuring stabilized
performance despite ambient temperature changes. Circuit improvements have reduced the
overall power consumption.
Count speeds exceeding 20 million counts per second (Mc/s) are achieved by the SPCM-
AQRH-1X module (> 30 million counts per second on some models). There is a “dead time”
of 35 ns between pulses but other values can be set at the factory.
As each photon is detected, a TTL pulse of 2.5 Volts (minimum) high into a 50 Ohm load and
15 ns wide is output at the rear BNC connector. The module is designed to give a linear
performance at a case temperature between 5 ˚C and 40 ˚C.
The SPCM is also available in a 4 channel array format, the SPCM-AQ4C. It is a module of
4 APDs with single power supply and 4 individual outputs.
This series of photon counting modules are designed and built to be fully compliant with the
European Union Directive 2002/95EEC – Restriction of the use of certain Hazardous
Substances in electrical and electronic equipment (RoHS).
Product Table
Single Photon Counting Modules – SPCM
Part Number
Unit
SPCM-AQRH-10
SPCM-AQRH-11
SPCM-AQRH-12
SPCM-AQRH-13
SPCM-AQRH-14
SPCM-AQRH-15
SPCM-AQRH-16
SPCM-AQ4C
C30902SH-TC 1
C30902SH-DTC 2
Photo
Sensitive
Diameter
mm
0.18
0.18
0.18
0.18
0.18
0.18
0.18
Fibered
0.475
0.475
Maximum
Dark Count
Rate
c/s
1500
1000
500
250
100
50
25
500
2500
350
1. C30902SH-TC (0º C operation), 2. C30902SH-DTC (-20º C operation)
moduleS And oPticAl receiverS
Photon Detection
Efficiency
@ 700 nm
%
65 %
65 %
65 %
65 %
65 %
65 %
65 %
60 %
>5 %
>5 %
Max. Count Rate
before Saturation
c/s
25M
25M
25M
25M
25M
25M
25M
>2M / channel
-
-
Dead Time
ns
32
32
32
32
32
32
32
50
-
-
Pulse Width
ns
15
15
15
15
15
15
15
30
-
-
21

Figure 1
Mechanical Dimensions of the SPCM-AQRH Series
Figure 2
Mechanical Dimensions of the SPCM-AQ4C
Figure 3
Package Drawing – TO-8 Flange
22 Single Photon Counting Modules – SPCM
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ø

Sensors
Excelitas’ wide variety of photodiodes,
pulsed laser diodes,
emitters, and detectors are ideal:
• Laser range finding
• Semi-active laser receiver
and terminal guidance
• Laser warning systems
• Proximity fuzing
rubidium time Standards
Excelitas’ precise rubidium
atomic frequency/time
standards are ideal, whether
on earth or in space for:
• Tactical communications
systems
• Navigation systems
• Global positioning
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Power Supplies
Excelitas’ family of converters,
controllers, sequencers, and digitally
controlled power supplies
provide high fidelity power for:
• Solid state radars/EW systems
• Communication systems
• Command and control systems
• Depot and repair services
High Energy Switching
Excelitas is the world leader
in design and manufacture of
hermetically sealed, high energy
switching devices suitable for:
• Crowbar protection devices
• Radar
• Flashlamps
• Medical lithotripters
Excelitas’ Product Portfolio
for Defense, Aerospace
and Security
Energetic Systems
Excelitas is a leader in energetic
initiation and control with a
variety of detonators, initiators,
and Electronic Safe Arm Devices
(ESAD) for:
• Warhead initiation
• Rocket motor ignition
• CAD/PAD
• MIL-STD 1901A compliance
leds
Excelitas offers a wide
range of standard and custom
LEDs for:
• Interior aircraft lighting
• Anti-collision beacons
• Navigation lights
• Defense tactical displays
radiant Sources
High-performance, rugged
radiant energy solutions
provide superior capability in:
• Infrared countermeasure
systems
• Spacecraft lighting
23

About Excelitas Technologies
Excelitas Technologies is a global technology leader focused
on delivering innovative, customized solutions to meet the
lighting, detection and other high-performance technology
needs of OEM customers.
From aerospace and defense applications to medical lighting,
analytical instrumentation, clinical diagnostics, industrial, and
safety and security applications, Excelitas Technologies is
committed to enabling our customers' success in their specialty
end-markets. Excelitas Technologies has approximately 3,000
employees in North America, Europe and Asia, serving
customers across the world.
defense@excelitas.com
www.excelitas.com/Defense
Excelitas Technologies
Energetic Systems
1100 Vanguard Blvd.
Miamisburg, Ohio 45342 USA
Telephone : (+1) 937.865.3800
Toll-free: (+1) 866.539.5916
Fax: (+1) 937.865.5170
Excelitas Technologies
Power Supplies
1330 East Cypress Street
Covina, California 91724 USA
Telephone: (+1) 626.967.6021
Toll-free: (+1) 800.363.2095
Fax: (+1) 626.967.3151
For a complete listing of our global offices, visit www.excelitas.com/ContactUs
© 2011 Excelitas Technologies Corp. All rights reserved. The Excelitas logo and design are registered trademarks of Excelitas Technologies Corp.
All other trademarks not owned by Excelitas Technologies or its subsidiaries that are depicted herein are the property of their respective owners.
Excelitas reserves the right to change this document at any time without notice and disclaims liability for editorial, pictorial or typographical errors.
009127_01 0211-743
Excelitas Technologies
Frequency Standards & Switching
35 Congress Street
Salem, Massachusetts 01970 USA
Telephone: (+1) 978.745.3200
Toll free: (+1) 800.950.3441
Fax: (+1) 978.745.0894
Excelitas Technologies
Sensors
22001 Dumberry Road
Vaudreuil-Dorion, Quebec
Canada J7V 8P7
Telephone: (+1) 450.424.3300
Toll-free: (+1) 800.775.6786
Fax: (+1) 450.424.3345
Excelitas Technologies
Lighting & Radiant Sources
44370 Christy Street
Fremont, California 94538-3180 USA
Telephone: (+1) 510.979.6500
Toll-free: (+1) 800.775.6786
Fax: (+1) 510.687.1140
Excelitas Technologies
International Sales Office
Bat HTDS BP 246, 91882
Massy Cedex, France
Telephone: +33 (1) 6486 2824