weak inversion in analog and digital circuits - Lund Institute of ...
weak inversion in analog and digital circuits - Lund Institute of ...
weak inversion in analog and digital circuits - Lund Institute of ...
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Weak <strong><strong>in</strong>version</strong><br />
W,L width, length <strong>of</strong> the channel<br />
Cox gate capacitance per unit area<br />
VS UT = kT/q ( = 26 mV at 300°K)<br />
V = local non-equilibrium voltage <strong>in</strong> channel : channel voltage<br />
(quasi-Fermi potential <strong>of</strong> electrons)<br />
• at source end <strong>of</strong> channel: V = VS • at dra<strong>in</strong> end <strong>of</strong> channel: V = VD Qi local mobile <strong><strong>in</strong>version</strong> charge <strong>in</strong> channel (electrons)<br />
gate threshold voltage for V=0.<br />
V T0<br />
B<br />
V S<br />
p<br />
MOS TRANSISTOR : DEFINITIONS<br />
n-channel<br />
V D<br />
D<br />
VG G<br />
S<br />
n+ n+<br />
local substrate<br />
I D<br />
CSEM, E. Vittoz, 2003<br />
V S<br />
symbols:<br />
B<br />
G<br />
page 2<br />
S D<br />
p-channel<br />
n-channel<br />
S D<br />
B<br />
V G<br />
V G<br />
V D<br />
I D<br />
I D<br />
V D
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