A 10-bit 500-MS/s Folding ADC in 130nm CMOS
A 10-bit 500-MS/s Folding ADC in 130nm CMOS
A 10-bit 500-MS/s Folding ADC in 130nm CMOS
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A <strong>10</strong>-<strong>bit</strong> <strong>500</strong>-<strong>MS</strong>/s <strong>Fold<strong>in</strong>g</strong><br />
<strong>ADC</strong> <strong>in</strong> <strong>130nm</strong> <strong>CMOS</strong><br />
Cheng Chen<br />
Department of Electroscience, Lund University<br />
Cheng.Chen@es.lth.se<br />
CCCD Workshop 2006
Outl<strong>in</strong>e<br />
Introduction<br />
Proposed <strong>ADC</strong> Architecture<br />
Circuit Design<br />
Simulation Results<br />
Conclusions<br />
CCCD Workshop 2006 2
Specification<br />
Resolution: <strong>10</strong><strong>bit</strong><br />
Conversion rate: <strong>500</strong>MHz<br />
Input bandwidth: >250MHz<br />
Power supply: 1.2V<br />
Power consumption:
Speed vs. Resolution<br />
+<br />
CCCD Workshop 2006 4
Proposed <strong>ADC</strong> Architecture<br />
CCCD Workshop 2006 5
Internal Converter Tim<strong>in</strong>g<br />
CCCD Workshop 2006 6
Distributed S/H & Amplifiers (I)<br />
8 first-stage amplifiers + 2 dummies<br />
CCCD Workshop 2006 7
Distributed S/H & Amplifiers (II)<br />
Simple amplifiers can be<br />
employed<br />
Absolute ga<strong>in</strong> is uncritical<br />
for fold<strong>in</strong>g <strong>ADC</strong><br />
They can operate at<br />
open-loop mode<br />
Bootstrapped switch for<br />
sampl<strong>in</strong>g <strong>in</strong>put signal<br />
CCCD Workshop 2006 8
Distributed S/H & Amplifiers (III)<br />
Fr<strong>in</strong>ge capacitor is used<br />
Between f<strong>in</strong>ger metal wires<br />
Compatible with pure digital process<br />
CCCD Workshop 2006 9
Auto-Zero Calibration<br />
φ0:<br />
φ1, φ2<br />
:<br />
V<strong>in</strong> −Vr<br />
Cs<br />
Cp<br />
Cs<br />
Cs + Cp<br />
Vp<br />
V<strong>in</strong> p os<br />
os A( Vos −Vp)<br />
+ 1<br />
Cs<br />
Cp<br />
( )<br />
V − V + V<br />
<strong>in</strong> r p<br />
Input Referred Offset:<br />
V<br />
Vos<br />
A<br />
A<br />
⎛ Cs ⎞<br />
A⎜Vos −Vp− ( V<strong>in</strong>−Vr) ⎟<br />
⎝ Cs + Cp ⎠<br />
os _ <strong>in</strong><br />
A<br />
V = V<br />
A<br />
C p : <strong>in</strong>put capacitance of amplifier<br />
V<br />
⎛ Cp ⎞ Vos<br />
= ⎜1+ ⎟<br />
⎝ Cs⎠1+ A<br />
CCCD Workshop 2006 <strong>10</strong>
7<strong>bit</strong> <strong>Fold<strong>in</strong>g</strong> <strong>ADC</strong><br />
<strong>Fold<strong>in</strong>g</strong> factor: 4<br />
CCCD Workshop 2006 11
Current Comparator<br />
CLK=1: Reset<br />
Va and Vb are low,<br />
but unequal<br />
Latch keeps the<br />
former results<br />
CLK=0: Compare<br />
M1 and M2 are off<br />
to save power<br />
consumption<br />
CCCD Workshop 2006 12
Layout Plot<br />
Standard s<strong>in</strong>gle-poly<br />
8-metal digital <strong>130nm</strong><br />
<strong>CMOS</strong> technology<br />
Core Area:<br />
0.65mmX0.83mm=0.54mm 2<br />
CCCD Workshop 2006 13
Simulation Results (I)<br />
Spectrum: f<strong>in</strong>=<strong>10</strong>MHz<br />
CCCD Workshop 2006 14
Simulation Results (II)<br />
Dynamic performance at <strong>500</strong><strong>MS</strong>ample/s<br />
CCCD Workshop 2006 15
Performance Comparison<br />
Process (µm)<br />
Supply Voltage (V)<br />
Resolution (<strong>bit</strong>)<br />
Sampl<strong>in</strong>g Frequency (MHz)<br />
SNDR (f<strong>in</strong>=<strong>10</strong>MHz)<br />
Power Consumption (mW)<br />
Chip Area (mm 2 )<br />
This work<br />
0.13<br />
1.2<br />
<strong>10</strong><br />
<strong>500</strong><br />
56.9 dB<br />
124<br />
0.54<br />
CICC2002[1]<br />
0.18<br />
160<br />
56.5 dB<br />
190<br />
1.02<br />
0.13<br />
220<br />
54.3 dB<br />
135<br />
CCCD Workshop 2006 16<br />
1.8<br />
<strong>10</strong><br />
ISSCC2004[2]<br />
[1] M. Clara, et al, “A 1.8V Fully Embedded <strong>10</strong>b 160<strong>MS</strong>/s Two-Step <strong>ADC</strong> <strong>in</strong> 0.18µm<br />
<strong>CMOS</strong>,” <strong>in</strong> Proc. CICC, pp. 437-440, May 2002.<br />
[2] B. Hernes, et al, “A 1.2V 220<strong>MS</strong>/s <strong>10</strong>b Pipel<strong>in</strong>e <strong>ADC</strong> Implemented <strong>in</strong> 0.13µm Digital<br />
<strong>CMOS</strong>,” <strong>in</strong> ISSCC Dig. Tech. Papers, pp. 256-526, Feb. 2004.<br />
1.2<br />
<strong>10</strong><br />
1.3
Conclusions<br />
<strong>10</strong>-<strong>bit</strong> <strong>500</strong>-<strong>MS</strong>/s <strong>ADC</strong> realized<br />
<strong>Fold<strong>in</strong>g</strong> + subrang<strong>in</strong>g architecture<br />
Simple amplifiers work at open-loop mode<br />
to achieve a high speed<br />
Auto-zero offset calibration to improve<br />
accuracy<br />
Standard digital <strong>CMOS</strong> process<br />
CCCD Workshop 2006 17