<strong>EE</strong><strong>410</strong> CMOS Process Run Sheet Lot ID:____________ STEP 100.00 - REWORK SH<strong>EE</strong>T REWORK PHOTOMASK LAYER# __________________ Reworked wafers: _______________________________ STEP 100.005 gasonics, program 013 Date_________ Time _________ Operator _________ Comments_____________________________________ STEP 100.010 - SINGE & PRIME yes standard oven singe/HMDS prime Date _________ Time _________ Operator _________ Comments______________________________________ STEP 100.120 - RESIST SPIN COAT Prog 9,7,1 (1 µm resist) Prog 9,8,2 (1.6 µm resist) System used: svgcoat svgcoat2 Date _________ Time _________ Operator _________ Comments ____________________________________ STEP 100.140 - ALIGNED EXPOSE Expose using ASML Stepper, 0 – Zero Level: <strong>EE</strong><strong>410</strong>R_1, 0,0,PM,45023981A009 1 – Active: <strong>EE</strong><strong>410</strong>R_1, 1, ACTIVE, <strong>EE</strong><strong>410</strong>RET1 2 –PWell: <strong>EE</strong><strong>410</strong>R_1, 2, PWELL, <strong>EE</strong><strong>410</strong>RET1 3 – Poly: <strong>EE</strong><strong>410</strong>R_1, 3, POLY, <strong>EE</strong><strong>410</strong>RET2 4 – N-Select: <strong>EE</strong><strong>410</strong>R_1, 5, NSELECT, <strong>EE</strong><strong>410</strong>RET3 5 – Contact holes: <strong>EE</strong><strong>410</strong>R_1, 6, CONTACT, <strong>EE</strong><strong>410</strong>RET3 6 – Metal: <strong>EE</strong><strong>410</strong>R_1, 4, METAL, <strong>EE</strong><strong>410</strong>RET2 Date _________ Time _________ Operator _________ Exposure used:_________________________________ Comments_____________________________________ STEP 6.160 – POST EXPOSURE BAKE Prog 9, 1 (1 µm resist) Prog 9,2 (1.6 µm resist) System: svgdev svgdev2 Date _________ Time _________ Operator _________ Comments_________________________________________ STEP 100.160 - RESIST DEVELOP Prog 8,1 (1µ m resist) Prog 4,2 (1.6 µm resist) System used: svgdev svgdev2 Date_________Time _________ Operator _________ Comments____________________________________ STEP 100.180 - INSPECTION Visual microscope inspection. Check for defects and alignment/exposure qualit y. Date _________ Time _________ Operator _________ Comments ____________________________________ STEP 100.00 - REWORK SH<strong>EE</strong>T REWORK PHOTOMASK LAYER# __________________ Reworked wafers: _______________________________ STEP 100.005 gasonic s, program 013 Date_________ Time _________ Operator _________ Comments_____________________________________ STEP 100.010 - SINGE & PRIME yes standard oven singe/HMDS prime Date _________ Time _________ Operator _________ Comments______________________________________ STEP 100.120 - RESIST SPIN COAT Prog 9,7,1 (1µm resist) Prog 9,8,2 (1.6 µm resist) System used: svgcoat svgcoat2 Date _________ Time _________ Operator _________ Comments ____________________________________ STEP 100.140 - ALIGNED EXPOSE Expose using ASML Stepper, 0 – Zero Level: <strong>EE</strong><strong>410</strong>R_1, 0,0,PM,45023981A009 1 – Active: <strong>EE</strong><strong>410</strong>R_1, 1, ACTIVE, <strong>EE</strong><strong>410</strong>RET1 2 –PWell: <strong>EE</strong><strong>410</strong>R_1, 2, PWELL, <strong>EE</strong><strong>410</strong>RET1 3 – Poly: <strong>EE</strong><strong>410</strong>R_1, 3, POLY, <strong>EE</strong><strong>410</strong>RET2 4 – N-Select: <strong>EE</strong><strong>410</strong>R_1, 5, NSELECT, <strong>EE</strong><strong>410</strong>RET3 5 – Contact holes: <strong>EE</strong><strong>410</strong>R_1, 6, CONTACT, <strong>EE</strong><strong>410</strong>RET3 6 – Metal: <strong>EE</strong><strong>410</strong>R_1, 4, METAL, <strong>EE</strong><strong>410</strong>RET2 Date _________ Time _________ Operator _________ Exposure used:_________________________________ Comments_____________________________________ STEP 6.160 – POST EXPOSURE BAKE Prog 9, 1 (1 µm resist) Prog 9,2 (1.6 µm resist) System: svgdev svgdev2 Date _________ Time _________ Operator _________ Comments_________________________________________ STEP 100.160 - RESIST DEVELOP Prog 8,1 (1µ m resist) Prog 4,2 (1.6 µm resist) System used: svgdev svgdev2 Date_________Time _________ Operator _________ Comments____________________________________ STEP 100.180 - INSPECTION Visual microscope inspection. Check for defects and alignment/exposure quality. Use backside for additional comments. Make sure to annotate date, time & process step. Revised 1/11/07. Page 46/47
<strong>EE</strong><strong>410</strong> CMOS Process Run Sheet Lot ID:____________ Date _________ Time _________ Operator _________ Comments ____________________________________ Use backside for additional comments. Make sure to annotate date, time & process step. Revised 1/11/07. Page 47/47
Change language