EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
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<strong>EE</strong><strong>410</strong> CMOS Process Run Sheet Lot ID:____________<br />
STEP 100.00 - REWORK SH<strong>EE</strong>T<br />
REWORK PHOTOMASK LAYER# __________________<br />
Reworked wafers: _______________________________<br />
STEP 100.005 gasonics, program<br />
013<br />
Date_________ Time _________ Operator _________<br />
Comments_____________________________________<br />
STEP 100.010 - SINGE & PRIME<br />
yes standard oven singe/HMDS prime<br />
Date _________ Time _________ Operator _________<br />
Comments______________________________________<br />
STEP 100.120 - RESIST SPIN COAT<br />
Prog 9,7,1 (1 µm resist) Prog 9,8,2 (1.6 µm resist)<br />
System used: svgcoat svgcoat2<br />
Date _________ Time _________ Operator _________<br />
Comments ____________________________________<br />
STEP 100.140 - ALIGNED EXPOSE<br />
Expose using ASML Stepper,<br />
0 – Zero Level: <strong>EE</strong><strong>410</strong>R_1, 0,0,PM,45023981A009 1 – Active: <strong>EE</strong><strong>410</strong>R_1, 1, ACTIVE, <strong>EE</strong><strong>410</strong>RET1<br />
2 –PWell: <strong>EE</strong><strong>410</strong>R_1, 2, PWELL, <strong>EE</strong><strong>410</strong>RET1<br />
3 – Poly: <strong>EE</strong><strong>410</strong>R_1, 3, POLY, <strong>EE</strong><strong>410</strong>RET2<br />
4 – N-Select: <strong>EE</strong><strong>410</strong>R_1, 5, NSELECT, <strong>EE</strong><strong>410</strong>RET3<br />
5 – Contact holes: <strong>EE</strong><strong>410</strong>R_1, 6, CONTACT, <strong>EE</strong><strong>410</strong>RET3<br />
6 – Metal: <strong>EE</strong><strong>410</strong>R_1, 4, METAL, <strong>EE</strong><strong>410</strong>RET2<br />
Date _________ Time _________ Operator _________<br />
Exposure used:_________________________________<br />
Comments_____________________________________<br />
STEP 6.160 – POST EXPOSURE BAKE<br />
Prog 9, 1 (1 µm resist) Prog 9,2 (1.6 µm resist)<br />
System: svgdev svgdev2 Date _________ Time _________ Operator _________<br />
Comments_________________________________________<br />
STEP 100.160 - RESIST DEVELOP<br />
Prog 8,1 (1µ m resist) Prog 4,2 (1.6 µm resist)<br />
System used: svgdev svgdev2<br />
Date_________Time _________ Operator _________<br />
Comments____________________________________<br />
STEP 100.180 - INSPECTION<br />
Visual microscope inspection. Check for defects and<br />
alignment/exposure qualit y.<br />
Date _________ Time _________ Operator _________<br />
Comments ____________________________________<br />
STEP 100.00 - REWORK SH<strong>EE</strong>T<br />
REWORK PHOTOMASK LAYER# __________________<br />
Reworked wafers: _______________________________<br />
STEP 100.005 gasonic s,<br />
program 013<br />
Date_________ Time _________ Operator _________<br />
Comments_____________________________________<br />
STEP 100.010 - SINGE & PRIME<br />
yes standard oven singe/HMDS prime<br />
Date _________ Time _________ Operator _________<br />
Comments______________________________________<br />
STEP 100.120 - RESIST SPIN COAT<br />
Prog 9,7,1 (1µm resist) Prog 9,8,2 (1.6 µm resist)<br />
System used: svgcoat svgcoat2 Date _________ Time _________ Operator _________<br />
Comments ____________________________________<br />
STEP 100.140 - ALIGNED EXPOSE<br />
Expose using ASML Stepper,<br />
0 – Zero Level: <strong>EE</strong><strong>410</strong>R_1, 0,0,PM,45023981A009<br />
1 – Active: <strong>EE</strong><strong>410</strong>R_1, 1, ACTIVE, <strong>EE</strong><strong>410</strong>RET1<br />
2 –PWell: <strong>EE</strong><strong>410</strong>R_1, 2, PWELL, <strong>EE</strong><strong>410</strong>RET1<br />
3 – Poly: <strong>EE</strong><strong>410</strong>R_1, 3, POLY, <strong>EE</strong><strong>410</strong>RET2<br />
4 – N-Select: <strong>EE</strong><strong>410</strong>R_1, 5, NSELECT, <strong>EE</strong><strong>410</strong>RET3<br />
5 – Contact holes: <strong>EE</strong><strong>410</strong>R_1, 6, CONTACT, <strong>EE</strong><strong>410</strong>RET3<br />
6 – Metal: <strong>EE</strong><strong>410</strong>R_1, 4, METAL, <strong>EE</strong><strong>410</strong>RET2<br />
Date _________ Time _________ Operator _________<br />
Exposure used:_________________________________<br />
Comments_____________________________________<br />
STEP 6.160 – POST EXPOSURE BAKE<br />
Prog 9, 1 (1 µm resist) Prog 9,2 (1.6 µm resist)<br />
System: svgdev svgdev2 Date _________ Time _________ Operator _________<br />
Comments_________________________________________<br />
STEP 100.160 - RESIST DEVELOP<br />
Prog 8,1 (1µ m resist) Prog 4,2 (1.6 µm resist)<br />
System used: svgdev svgdev2<br />
Date_________Time _________ Operator _________<br />
Comments____________________________________<br />
STEP 100.180 - INSPECTION<br />
Visual microscope inspection. Check for defects and<br />
alignment/exposure quality.<br />
Use backside for additional comments. Make sure to annotate date, time & process step. Revised 1/11/07.<br />
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