EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility

EE410 / Saraswat Handout #3
• Oxide thickness measurements
Week 5: Preparation
18. LTO Densification [STEPS 4.320-4.260]
• Standard pre-diffusion clean (wbdiff)
• LTO Densification (tylan1/2, program 950AN): Ramped process 30’ N2 @ 950°C
19. Photolithography #5 – Contact Holes [STEPS 5.000-5.190]
• Singe and prime (yes oven)
• Resist coat (svgcoat/2, programs 9,7,1)
• Expose (asml, with reticle EE410RET3, Job Name: EE410R_1)
• Post exposure bake (svgcoat/2, programs 9,1)
• Develop (svgdev/2, program 3,1)
• Inspect/rework as needed
• Postbake @110C, 30 min.
Week 5: Lab Section
20. Plasma Oxide Etch [STEPS 5.200-5.260]
• Postbake @ 110°C, 30’
• SiO2 RIE in AMT 8100: CHF3/O2
• Standard Hard Resist Strip (gasonics, program 013, wbnonmetal, 10 min
piranha)
Week 6: Preparation
21. Metal Deposition [STEPS 5.300-5.320]
• Standard pre-diffusion clean (wbdiff)
• Al/Si Deposition in Gryphon Sputtering System: ≈ 10000Å
•
22. Photolithography #6 – Metal [STEPS 6.000-6.190]
• Singe and prime (yes oven)
• Resist coat (svgcoat/2, programs 9,8,2)
• Expose (asml, with reticle EE410RET2, Job Name: EE410R_1)
• Post exposure bake (svgcoat/2, programs 9,2)
• Develop (svgdev/2, program 4,2)
• Inspect/rework as needed
• Postbake @110C, 30 min.
Week 6: Lab Section
23. Metal Etch [STEPS 6.210-6.240]
• Postbake @ 110°C, 30’
Revised Jan. 11, 2008 Page 33/47