EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
EE 410 / Saraswat Handout #3 - Stanford Nanofabrication Facility
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<strong>EE</strong><strong>410</strong> / <strong>Saraswat</strong> <strong>Handout</strong> <strong>#3</strong><br />
• Postbake wafers in the 110°C oven for 30 min to assure resist has predictable undercut<br />
behavior. Cool in carrier 30 min.<br />
• Descum the resist in Drytek2 for 30 seconds. This is IMPORTANT for good etching since<br />
it makes resist hydrophilic.<br />
• Etch wafers in fresh BOE 6:1 until backsides clear plus 10%.<br />
1. Set 6:1 BOE timer to 420 seconds.<br />
2. Start down counter, at T=415 submerge in DI.<br />
3. At T=400 transfer to 6:1 BOE<br />
4. Agitate every 20 seconds. Begin peeking at T=300 sec.<br />
5. Expect wafer backs to clear (hydrophobic) at T=50 sec.<br />
6. Add 10% (about 40 seconds) after clear.<br />
7. Quickly dump rinse then spin.<br />
• Microscope examination: The etch should look slightly undercut, about 0.5 microns. The<br />
resist should be in good condition.<br />
• Check etched areas with the Nanospec to insure that etching is complete.<br />
4C. Week #2: Preparation<br />
8. Sacrificial Oxidation (STEPS 1.250-1.340)<br />
Photoresist Removal:<br />
• Use the Standard Hard Resist Strip process to remove resist.<br />
• After the resist removal, inspect the wafers to make sure that all of the resist is gone.<br />
Sacrificial Oxidation:<br />
The Sacrificial Oxide protects the active silicon from contamination through the well implant<br />
steps. Old versions of this process used this oxide as the gate oxide; we now regrow a fresh and<br />
clean gate oxide just prior to poly deposition.<br />
• Process wafers through Standard Pre-Diffusion Clean.<br />
• Use tylan1 or tylan 2.<br />
• Program "GATEOX" in Tylan.<br />
• Process summary:<br />
o Slow push at 800°C.<br />
o Ramp to 900°C in 2.4 L/min N2 and 0.1 L/min.O2 (20 min).<br />
o Oxidize: dry O2 (5 min), steam (12 min), dry O2 (5 min).<br />
o Ramp down in N2 (15 min).<br />
o Slow pull.<br />
• The process takes ~1 hr and 30 min of furnace time.<br />
• The target sacrificial oxide thickness is ~40 nm.<br />
Field Oxide Thickness (After Sacrificial Oxidation):<br />
The field oxide will be a bit thicker from the sacrificial oxide grown, but also thinner from a bit<br />
of HF exposure. It’s a good time to check it.<br />
Revised Jan. 11, 2008 Page 18/47