ICE Shared Construction Analysis SCA 9712-570 - Smithsonian ...

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Assembly: ANALYSIS RESULTS I - 4 - Figures 1 - 4a Note: Package analysis was not required. The following data was obtained by observation and is given here as general information. Questionable Items: 1 None. General Items: • Devices were packages in 8-pin plastic DIPs. • Package markings were clear and easy to read. Date codes were not identifiable. • Overall package quality: Normal. No defects were noted on the external portions of the package. Deflash was of normal quality and workmanship. Lead form was of normal quality and workmanship. No problems were found. • Die placement: Die was centered and silver-filled polyimide die attach was of good quantity and quality. No problems were found. • Lead-locking provisions (anchors and holes) were present at all pins. • Wirebonding: Thermosonic ball bond method using 1.3 mil O.D. gold wire. No bond lifts occurred and bond pull strengths were good (see page 8). Metal 2 on 1 formed the bond pads. Wire spacing and placement was good. Probe mark damage was noted at some test pads. The damage decreased the metal spacing; however, no shorts were noted. • Die dicing: Die separation was by full depth sawing with good quality workmanship. 1 These items present possible quality or reliability concerns. They should be discussed with the manufacturer to determine their possible impact on the intended application.
Die Process and Design: Questionable Items: 1 ANALYSIS RESULTS II • Metal cracks were noted at contact edges. • Significant silicon in contacts. - 5 - Figures 5 - 31 Special Features: • Linear Power BiCMOS process which includes a double diffused (DMOS) process. • Extended shallow source/drain N-channel transistor structure. Design Features: • Large area for double diffused (DMOS) process. • Large capacitor structures. General Items: • Fabrication process: Linear Power BiCMOS process with N-epi, P-well, P+ iso, and N+ buried layer, incorporating N and P channel MOS, DMOS, NPN and PNP transistors. • Design and layout: Die layout was clean and efficient. The identification number on the die was 2675. • Die surface defects: None. No contamination or processing defects were noted. 1 These items present possible quality or reliability concerns. They should be discussed with the manufacturer to determine their possible impact on the intended application.
Page 1 and 2: Construction Analysis National Semi
Page 3 and 4: INTRODUCTION This report describes
Page 5: TECHNOLOGY DESCRIPTION (continued)
Page 9 and 10: ANALYSIS RESULTS II (continued) •
Page 11 and 12: OVERALL QUALITY EVALUATION: Overall
Page 13 and 14: HORIZONTAL DIMENSIONS Die size: 1.8
Page 15 and 16: INDEX TO FIGURES PACKAGE ASSEMBLY F
Page 17 and 18: National LM2672 PIN 1 top side Figu
Page 19 and 20: INTERMETAL DIELECTRIC PRE-METAL DIE
Page 21 and 22: IMD LOCAL OXIDE PASSIVATION METAL 2
Page 23 and 24: National LM2672 Figure 5a. Detailed
Page 25 and 26: Mag. 400x Mag. 500x Figure 6. Die i
Page 27 and 28: Figure 7. Optical views of the die
Page 29 and 30: National LM2672 METAL 1 POLY N+ PRE
Page 31 and 32: National LM2672 METAL 2 Mag. 2000x
Page 33 and 34: National LM2672 PASSIVATION 2 METAL
Page 35 and 36: National LM2672 METAL 1 POLY POLY M
Page 37 and 38: National LM2672 Si PASSIVATION IMD
Page 39 and 40: National LM2672 Mag. 1300x DIFFUSIO
Page 41 and 42: National LM2672 GATE OXIDE PASSIVAT
Page 43 and 44: National LM2672 STEP N+ POLY GATE O
Page 45 and 46: National LM2672 METAL 1 LOCOS P- BO
Page 47 and 48: National LM2672 METAL 1 Si Si POLY
Page 49 and 50: N+ COLLECTOR PASSIVATION P+BASE N+
Page 51 and 52: National LM2672 P+ ISO P+ EMITTER N
Page 53 and 54: National LM2672 PROBE MARK Integrat

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