ICE Shared Construction Analysis SCA 9712-570 - Smithsonian ...

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Assembly: TECHNOLOGY DESCRIPTION • Devices were encapsulated in 8-pin plastic DIPs. • Lead-locking provisions (anchors and holes) were present at all pins. • Thermosonic ball bond method employing 1.3 mil O.D. gold wire. • Silver-filled polyimide die attach. • Sawn dicing (full depth). Die Process and Design • Fabrication process: Linear Power BiCMOS process with N-epi, P-well, P+ iso, and N+ buried layer, incorporating N and P channel MOS, DMOS, NPN and PNP transistors. • Final passivation: Two layers of passivation were employed. A layer of nitride over a layer of silicon-dioxide. • Metallization: Two levels of silicon-doped aluminum defined by dry-etch techniques. No caps or barriers were present. Standard contacts and vias (no plugs). In the DMOS area metal 2 was placed directly on metal 1. • Intermetal Dielectric (IMD): Intermetal dielectric consisted of single layer of glass. No planarization technique was used. • Pre-metal glass: A single layer of reflow glass was used. Reflow was done prior to contact cuts. Grown and densified oxides were also present. - 2 -
TECHNOLOGY DESCRIPTION (continued) • Polysilicon: Single layer of dry-etched polysilicon (no silicide) was used to form all MOS gates on the die. It was also used as the top plate for the thin oxide capacitors. An LDD process was used with spacers removed. • DMOS devices: A double diffused Hexfet style process was employed. N+ diffusions formed the sources of the transistor elements. Deep P+ diffusions formed the body and inherent body diode. N- epi/buried layer formed the drain. • CMOS devices: Standard N+ and P+ implanted diffusions formed the sources/drains for these transistors. Sidewall spacers were selectively used and removed. Long shallow N+ LDD extensions were present on one side of some of the NMOS transistors. P-wells and N-epi were used for N-channel devices. • Bipolar devices: Standard N+ diffusions were used for emitters and collectors of NPN’s and base contacts of PNP devices. The standard base diffusions also used a shallow P+ implant (probably the S/D P+) at contact areas. P+ isolation diffusions were diffused from top and bottom of the epi (to reduce isolation width). • No buried contacts were employed. - 3 -
Page 1 and 2: Construction Analysis National Semi
Page 3: INTRODUCTION This report describes
Page 7 and 8: Die Process and Design: Questionabl
Page 9 and 10: ANALYSIS RESULTS II (continued) •
Page 11 and 12: OVERALL QUALITY EVALUATION: Overall
Page 13 and 14: HORIZONTAL DIMENSIONS Die size: 1.8
Page 15 and 16: INDEX TO FIGURES PACKAGE ASSEMBLY F
Page 17 and 18: National LM2672 PIN 1 top side Figu
Page 19 and 20: INTERMETAL DIELECTRIC PRE-METAL DIE
Page 21 and 22: IMD LOCAL OXIDE PASSIVATION METAL 2
Page 23 and 24: National LM2672 Figure 5a. Detailed
Page 25 and 26: Mag. 400x Mag. 500x Figure 6. Die i
Page 27 and 28: Figure 7. Optical views of the die
Page 29 and 30: National LM2672 METAL 1 POLY N+ PRE
Page 31 and 32: National LM2672 METAL 2 Mag. 2000x
Page 33 and 34: National LM2672 PASSIVATION 2 METAL
Page 35 and 36: National LM2672 METAL 1 POLY POLY M
Page 37 and 38: National LM2672 Si PASSIVATION IMD
Page 39 and 40: National LM2672 Mag. 1300x DIFFUSIO
Page 41 and 42: National LM2672 GATE OXIDE PASSIVAT
Page 43 and 44: National LM2672 STEP N+ POLY GATE O
Page 45 and 46: National LM2672 METAL 1 LOCOS P- BO
Page 47 and 48: National LM2672 METAL 1 Si Si POLY
Page 49 and 50: N+ COLLECTOR PASSIVATION P+BASE N+
Page 51 and 52: National LM2672 P+ ISO P+ EMITTER N
Page 53 and 54: National LM2672 PROBE MARK Integrat

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