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III. Gm-C Filtering - Epublications - Université de Limoges

III. Gm-C Filtering - Epublications - Université de Limoges

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In terms of noise, the Flicker noise which exhibits a 1/f <strong>de</strong>pen<strong>de</strong>ncy is neglected as a<br />

first or<strong>de</strong>r approximation since TV bands are located above 45MHz. Hence, transconductor<br />

input-referred noise power is proportional to 1/gm [<strong>III</strong>.4]:<br />

Figure 108. Input referred noise power<br />

2 ⎛ 2 2g<br />

⎞ m3<br />

λ ⎛ g m3<br />

⎞<br />

V ≈<br />

⎜ +<br />

⎟ ∝ ⎜ + ⎟<br />

n,<br />

in 8kT<br />

1 .<br />

2<br />

⎝ 3g<br />

m1<br />

3g<br />

m1<br />

⎠ g m1<br />

⎝ g m1<br />

⎠<br />

λ being a constant term, k being the Boltzman constant and T the temperature.<br />

- 93 -<br />

(<strong>III</strong>.28)<br />

This means that the higher the transconductance (gm1) values, the lower the noise of<br />

the <strong>Gm</strong>-cell. However, they suffer from non-linearity, as shown in Figure 109. In<strong>de</strong>ed this<br />

figure <strong>de</strong>scribes the gm versus the input voltage for a same current and various transistor sizes<br />

which increase the transconductance. From this graph it is clear that high transconductances<br />

have to be improved using linearization techniques.<br />

Figure 109. Transconductance non-linearity at constant current, varying the W/L ratio<br />

Furthermore, the choice of high transconductance values means the use of high<br />

g m<br />

capacitances to be able to reach the low end of the TV bands since f 0 ≈ , as shown in<br />

2πC<br />

Figure 110. In an advanced CMOS technology, large capacitors integration are not suitable<br />

for an optimum die area.

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