III. Gm-C Filtering - Epublications - Université de Limoges

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depicts this Rds resistance versus the drain current. As it may be found in the literature, the smaller the gate length L, the smaller the drain-source resistance since: LU a R ds = , (III.71) I d where Ua is a factor depending on channel-length modulation. Figure 96. Drain-source resistance versus drain current As far as intrinsic noise and linearity of CMOS technologies are concerned, it is very difficult to compare one to another. Indeed, it strongly depends on the modeling and its accuracy. Comparing technologies from different founders may lead to misinterpretations. An important point in comparing technologies is their ability to support high supply voltages by means of thick oxide transistors. Since the RF filter should be able to handle the LNA output swing, a high enough supply voltage is required. Indeed a 1.2V supply in 65nm CMOS would not be sufficient to handle a large swing without distortions. Minimum gate lengths and supply voltages of the various studied technologies are summarized in Table 6. CMOS technology Table 6. CMOS technologies comparison Name C14 C13 C90 C65 C45 Provider NXP Jazz TSMC TSMC TSMC oxide type thin thick thin thick thin thick thin thick thin thick Lmin (µm) 0,16 0,322 0,12 0,36 0.1 0.28 0,06 0,28 0,04 0,27 Supply (V) 1,8 3,6 1,2 3,3 1.2 2.5 1,2 2,5 1.1 2,5 - 78 -
II.7 Conclusion As a conclusion, this chapter has demonstrated that the second order bandpass filter topology best fulfils the requirements of TV tuners. Indeed, its efficient central frequency tuning and the possibility to determine accurately either a -3dB bandwidth or a filter quality factor make it a very attractive topology. Studying the literature allows comparing the performances of various structures. It comes out that Gm-C filters are able to work in the TV operating frequencies while achieving interesting RF performances and tuning range. In the following, this type of filter will be studied more deeply and designed with a high dynamic range focus, in order to determine in a quantitative way which performances are reachable with this type of filter and what are the limitations to this structure. - 79 -
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UNIVERSITE DE LIMOGES ECOLE DOCTORA
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Acknowledgments En préambule à ce
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Summary ACKNOWLEDGMENTS ...........
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V. A PERSPECTIVE FOR FUTURE DEVELOP
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French Introduction Les signaux TV
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I. Introduction to TV tuners and to
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I.1.b.ii Digital modulations In dig
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makes the covering of a large terri
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I.1.c.iii Terrestrial spectrum Firs
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I.1.e Broadband Reception Systems F
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I.2.b TV Tuner High Performance Spe
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I.2.b.ii High linearity Although co
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I.3 RF Filter Specifications I.3.a
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27. This leads to the downconversio
Page 31 and 32: These adjacent channel rejection re
Page 33 and 34: Above 870MHz, there are no more ter
Page 35 and 36: Newest silicon tuners generations,
Page 37 and 38: I.6 References [I.1] B. Razavi, RF
Page 39 and 40: II. Challenges of RF Selectivity Fo
Page 41 and 42: Figure 39. H3 and N+5 rejections of
Page 43 and 44: Figure 43. Second order Low-pass Fi
Page 45 and 46: Figure 46 illustrates the transfer
Page 47 and 48: H HPF s ( s) = s 1 + ω This corres
Page 49 and 50: Topologies comparison for a same Q-
Page 51 and 52: Figure 56. Low-pass to Notch Transf
Page 53 and 54: II.2 Passive LC Second Order Bandpa
Page 55 and 56: A possible solution is to split the
Page 57 and 58: II.2.c Second Order Bandpass Filter
Page 59 and 60: Figure 69. Band Switching Figure 70
Page 61 and 62: Another paper [II.7] provides a FOM
Page 63 and 64: A parallel self resonating circuit
Page 65 and 66: This gives the following values for
Page 67 and 68: Vb - 63 - M1 M2 Zin Figure 76. Anot
Page 69 and 70: when given, reported noise figures
Page 71 and 72: In all publications dedicated to Gm
Page 73 and 74: II.4.c Second Order Bandpass Filter
Page 75 and 76: Figure 87. Biquad Schematic The Gm-
Page 77 and 78: Vin Rm - 73 - C Vout Figure 89. Der
Page 79 and 80: Figure 93 depicts the RF performanc
Page 81: A second advantage of advanced BiCM
Page 85 and 86: [II.13] C. Andriesei, L. Goras, and
Page 87 and 88: III.I Theoretical Study III. Gm-C F
Page 89 and 90: g V m3 in III.1.b Linearity Conside
Page 91 and 92: Assuming an ideal input transconduc
Page 93 and 94: Figure 102. Linearity of the filter
Page 95 and 96: Furthermore, a Gm-C circuit is not
Page 97 and 98: In terms of noise, the Flicker nois
Page 99 and 100: Table 7 summarizes the specificatio
Page 101 and 102: Idiff (A) levels reached with this
Page 103 and 104: III.2.e Unbalanced Differential Pai
Page 105 and 106: Hence, the combination of the expon
Page 107 and 108: Technique Current Increase Source D
Page 109 and 110: Using this structure and considerin
Page 111 and 112: The dimensioning of the transistors
Page 113 and 114: III.3.c Gm-cells with MGTR III.3.c.
Page 115 and 116: Furthermore, the high sensitivity t
Page 117 and 118: Figure 136. Filter in-band IIP3 ver
Page 119 and 120: III.4 Comparison of the filters III
Page 121 and 122: III.5 Conclusion Once the Gm-C seco
Page 123 and 124: IV. Rauch Filtering IV.1 Sallen-Key
Page 125 and 126: Thus, an equation linking Q and Gai
Page 127 and 128: IV.1.c.ii Proposed positive feedbac
Page 129 and 130: For both Rauch and Sallen-Key filte
Page 131 and 132: The high sensitivity to passive com
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Furthermore, it should also be take
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IV.2.b Innovative Implementation of
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esulting gain K, constituted of the
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Table 25. Sum-up of the OA specific
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Figure 153. OA voltage gain versus
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Filtering in the mirror, by means o
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However, this feedback makes the fi
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Figure 160. OA Gain and phase versu
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IV.3.c Implemented Filter and Test
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Figure 165 depicts the layout of th
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Figure 169. PVT variations of the f
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IV.4 Rauch Filter Performances: Mea
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Figure 178. IIP3 versus input power
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IV.4.c Performances Sum-up The filt
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Table 30. Frequency Limitations of
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IV.7 References [IV.1] Y. Tsividis
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V. A Perspective for Future Develop
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V.2 4-path Filter Simulations V.2.a
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The frequency tunability is ensured
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V.3 State-of-the-Art V.3.a 4-path F
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V.4 Conclusion In this chapter, it
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IEEE International, 2009, pp. 222-2
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RF selectivity challenges In this t
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The positive feedback Rauch filter
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It is worth highlighting that FOM1
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étudiée. Il s’avère que la lin
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It is worth noticing that S0 only d
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A.3 Signal-to-Noise Ratio These dif
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A.5 Friis’ Formula In case of mul
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A.7 References [A.1] Friis, H.T., N
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To estimate the influence of the di
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Now, let’s have a look to the cub
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Figure 200. Third order intercept p
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B.2 RF Filter Linearity Measurement
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B.2.c IIP2 measurement To measure t
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C.1 Gyrator-C filtering year Ref. f
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C.2 Gm-C Filtering year Ref. f0 (MH
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year C.3 Rm-C filtering Ref. f0 (MH
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C.5 References C.5.a Gyrator-C filt
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[C.23] J. De Lima and C. Dualibe,
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this gives: I I I md d1 d 2 = I I =
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D.2 MOS Degenerated Common-Source C
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⎛ I s ⎞ Vout = Vin + U T ln ⎜
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Computing, this leads to: V out + v
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FIGURE 54. H3 AND N+5 REJECTIONS AC
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FIGURE 168. PVT VARIATIONS OF THE F
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