III. Gm-C Filtering - Epublications - Université de Limoges

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andwidth, tuning the quality factor of the filter. This kind of filter is very attractive for both adjacent channels and harmonic frequencies rejections. Higher order bandpass filters enable to reach higher rejections, as depicted in Figure 51 and Figure 52, at the cost of the use of more reactive elements. order increase Figure 51. Impact of the Bandpass Filters Transfer Function Order Figure 52. H3 and N+5 rejections according to the order In case of high order bandpass filters, some particular associations of transfer function coefficients can be achieved [II.2]. Such filter aims at getting the flatter passband (Butterworth topologies) or the steeper roll-off allowing some ripple in the passband or in the stopband (Chebychev type I or II filters). Some filters present an equalized ripple in the passband and in the stopband and also have the fastest transitions. These filters are known as elliptic. A comparison between these filters is performed in Figure 53 and Figure 54. - 44 -
Topologies comparison for a same Q-factor and f0 Figure 53. Comparison of fourth order bandpass filters Figure 54. H3 and N+5 rejections according to the fourth order topology Despite a higher selectivity than second order bandpass, these filters are constituted with four or more reactive elements, leading to a more complex circuit. In particular, the frequency tuning requires keeping the sets of coefficient of the transfer function constant, as said for low-pass high order filters. As explained, to minimize the number of reactive elements in the circuit, a second order bandpass filter is preferred to higher order bandpass filters. Furthermore, Figure 55 depicts the use of a second order bandpass filters tuned in frequency at constant Q-factor or at a constant-BW, and the achieved rejections are in line with the order of magnitude of the required specifications. - 45 -
Page 1: UNIVERSITE DE LIMOGES ECOLE DOCTORA
Page 5 and 6: Acknowledgments En préambule à ce
Page 7 and 8: Summary ACKNOWLEDGMENTS ...........
Page 9 and 10: V. A PERSPECTIVE FOR FUTURE DEVELOP
Page 11 and 12: French Introduction Les signaux TV
Page 13 and 14: I. Introduction to TV tuners and to
Page 15 and 16: I.1.b.ii Digital modulations In dig
Page 17 and 18: makes the covering of a large terri
Page 19 and 20: I.1.c.iii Terrestrial spectrum Firs
Page 21 and 22: I.1.e Broadband Reception Systems F
Page 23 and 24: I.2.b TV Tuner High Performance Spe
Page 25 and 26: I.2.b.ii High linearity Although co
Page 27 and 28: I.3 RF Filter Specifications I.3.a
Page 29 and 30: 27. This leads to the downconversio
Page 31 and 32: These adjacent channel rejection re
Page 33 and 34: Above 870MHz, there are no more ter
Page 35 and 36: Newest silicon tuners generations,
Page 37 and 38: I.6 References [I.1] B. Razavi, RF
Page 39 and 40: II. Challenges of RF Selectivity Fo
Page 41 and 42: Figure 39. H3 and N+5 rejections of
Page 43 and 44: Figure 43. Second order Low-pass Fi
Page 45 and 46: Figure 46 illustrates the transfer
Page 47: H HPF s ( s) = s 1 + ω This corres
Page 51 and 52: Figure 56. Low-pass to Notch Transf
Page 53 and 54: II.2 Passive LC Second Order Bandpa
Page 55 and 56: A possible solution is to split the
Page 57 and 58: II.2.c Second Order Bandpass Filter
Page 59 and 60: Figure 69. Band Switching Figure 70
Page 61 and 62: Another paper [II.7] provides a FOM
Page 63 and 64: A parallel self resonating circuit
Page 65 and 66: This gives the following values for
Page 67 and 68: Vb - 63 - M1 M2 Zin Figure 76. Anot
Page 69 and 70: when given, reported noise figures
Page 71 and 72: In all publications dedicated to Gm
Page 73 and 74: II.4.c Second Order Bandpass Filter
Page 75 and 76: Figure 87. Biquad Schematic The Gm-
Page 77 and 78: Vin Rm - 73 - C Vout Figure 89. Der
Page 79 and 80: Figure 93 depicts the RF performanc
Page 81 and 82: A second advantage of advanced BiCM
Page 83 and 84: II.7 Conclusion As a conclusion, th
Page 85 and 86: [II.13] C. Andriesei, L. Goras, and
Page 87 and 88: III.I Theoretical Study III. Gm-C F
Page 89 and 90: g V m3 in III.1.b Linearity Conside
Page 91 and 92: Assuming an ideal input transconduc
Page 93 and 94: Figure 102. Linearity of the filter
Page 95 and 96: Furthermore, a Gm-C circuit is not
Page 97 and 98: In terms of noise, the Flicker nois
Page 99 and 100:
Table 7 summarizes the specificatio
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Idiff (A) levels reached with this
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III.2.e Unbalanced Differential Pai
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Hence, the combination of the expon
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Technique Current Increase Source D
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Using this structure and considerin
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The dimensioning of the transistors
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III.3.c Gm-cells with MGTR III.3.c.
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Furthermore, the high sensitivity t
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Figure 136. Filter in-band IIP3 ver
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III.4 Comparison of the filters III
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III.5 Conclusion Once the Gm-C seco
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IV. Rauch Filtering IV.1 Sallen-Key
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Thus, an equation linking Q and Gai
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IV.1.c.ii Proposed positive feedbac
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For both Rauch and Sallen-Key filte
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The high sensitivity to passive com
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Furthermore, it should also be take
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IV.2.b Innovative Implementation of
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esulting gain K, constituted of the
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Table 25. Sum-up of the OA specific
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Figure 153. OA voltage gain versus
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Filtering in the mirror, by means o
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However, this feedback makes the fi
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Figure 160. OA Gain and phase versu
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IV.3.c Implemented Filter and Test
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Figure 165 depicts the layout of th
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Figure 169. PVT variations of the f
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IV.4 Rauch Filter Performances: Mea
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Figure 178. IIP3 versus input power
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IV.4.c Performances Sum-up The filt
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Table 30. Frequency Limitations of
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IV.7 References [IV.1] Y. Tsividis
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V. A Perspective for Future Develop
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V.2 4-path Filter Simulations V.2.a
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The frequency tunability is ensured
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V.3 State-of-the-Art V.3.a 4-path F
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V.4 Conclusion In this chapter, it
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IEEE International, 2009, pp. 222-2
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RF selectivity challenges In this t
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The positive feedback Rauch filter
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It is worth highlighting that FOM1
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étudiée. Il s’avère que la lin
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It is worth noticing that S0 only d
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A.3 Signal-to-Noise Ratio These dif
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A.5 Friis’ Formula In case of mul
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A.7 References [A.1] Friis, H.T., N
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To estimate the influence of the di
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Now, let’s have a look to the cub
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Figure 200. Third order intercept p
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B.2 RF Filter Linearity Measurement
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B.2.c IIP2 measurement To measure t
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- 199 -
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C.1 Gyrator-C filtering year Ref. f
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C.2 Gm-C Filtering year Ref. f0 (MH
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year C.3 Rm-C filtering Ref. f0 (MH
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C.5 References C.5.a Gyrator-C filt
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[C.23] J. De Lima and C. Dualibe,
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- 211 -
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this gives: I I I md d1 d 2 = I I =
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D.2 MOS Degenerated Common-Source C
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⎛ I s ⎞ Vout = Vin + U T ln ⎜
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Computing, this leads to: V out + v
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- 223 -
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FIGURE 54. H3 AND N+5 REJECTIONS AC
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FIGURE 168. PVT VARIATIONS OF THE F
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