III. Gm-C Filtering - Epublications - Université de Limoges

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year C.4 LC filtering with passive components Ref. f0 (MHz) BW (MHz) Q gain (dB) Order IIP3 (dBm) NF (dB) techno node (µm) conso (mW) nature supply V realization inductor 1999 [C.38] 895 - 995 ~ 25 2 5,9 CMOS 0,6 9,3 SS 2,7 chip 2002 [C.39] 700 - 1200 2 BiCMOS 0,8 9 2 2003 [C.40] 1940 - 2210 ~ 53,8 ~ 40 2 CMOS 0,35 5 1,3 chip spiral 2004 [C.41] 980 - 1090 5 - 180 16 2 13 CMOS 0,35 15,5 SS chip spiral 2005 [C.42] 2100 - 3500 ~ 148 1 15 CMOS 0,18 12,7 1,8 simu 2007 2010 [C.43] NXP Hybrid+ 42 - 870 2 10 8 BiCMOS discrete - 206 -
C.5 References C.5.a Gyrator-C filtering [C.1] Y. Chang, J. Choma, and J. Wills, “The design and analysis of a RF CMOS bandpass filter,” Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on, 2000, pp. 625-628 vol.2. [C.2] Yue Wu, M. Ismail, and H. Olsson, “A novel CMOS fully differential inductorless RF bandpass filter,” Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on, 2000, pp. 149-152 vol.4. [C.3] A. Thanachayanont, “Low voltage low power CMOS inductorless RF bandpass filter with high image rejection capability,” Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on, 2002, pp. III-548-51 vol.3. [C.4] Yue Wu, Xiaohui Ding, M. Ismail, and H. Olsson, “RF bandpass filter design based on CMOS active inductors,” Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on, vol. 50, 2003, pp. 942-949. [C.5] Yue Wu, Xiaohui Ding, M. Ismail, and H. Olsson, “CMOS active inductor and its application in RF bandpass filter,” Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE, 2004, pp. 655-658. [C.6] Zhiqiang Gao, Mingyan Yu, Yizheng Ye, and Jianguo Ma, “Wide Tuning Range of A CMOS RF Bandpass Filter For Wireless Applications,” Electron Devices and Solid- State Circuits, 2005 IEEE Conference on, 2005, pp. 53-56. [C.7] Zhiqiang Gao, Jianguo Ma, Mingyan Yu, and Yizheng Ye, “A CMOS RF tuning wide-band bandpass filter for wireless applications,” SOC Conference, 2005. Proceedings. IEEE International, 2005, pp. 79-80. [C.8] Zhiqiang Gao, Jianguo Ma, Yizheng Ye, and Mingyan Yu, “Large tuning band range of high frequency filter for wireless applications,” Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on, 2005, pp. 384-387 Vol. 1. [C.9] V. Stornelli, G. Ferri, G. Leuzzi, and A. De Marcellis, “A tunable 0.5-1.3 GHz CMOS 2nd order bandpass filter with 50Ω input-output impedance matching,” Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on, 2006, p. 4 pp. [C.10] K. Allidina and S. Mirabbasi, “A widely tunable active RF filter topology,” Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on, 2006, p. 4 pp. [C.11] Z. Sassi, “Etude et Conception De Structures De Filtrage Actif Radiofréquence Intégrées En Technologie CMOS et BiCMOS pour application à la téléphonie cellulaire”, Université de Limoges, école doctorale science technologie santé, faculté des sciences et techniques, 2006. - 207 -
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UNIVERSITE DE LIMOGES ECOLE DOCTORA
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Acknowledgments En préambule à ce
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Summary ACKNOWLEDGMENTS ...........
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V. A PERSPECTIVE FOR FUTURE DEVELOP
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French Introduction Les signaux TV
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I. Introduction to TV tuners and to
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I.1.b.ii Digital modulations In dig
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makes the covering of a large terri
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I.1.c.iii Terrestrial spectrum Firs
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I.1.e Broadband Reception Systems F
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I.2.b TV Tuner High Performance Spe
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I.2.b.ii High linearity Although co
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I.3 RF Filter Specifications I.3.a
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27. This leads to the downconversio
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These adjacent channel rejection re
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Above 870MHz, there are no more ter
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Newest silicon tuners generations,
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I.6 References [I.1] B. Razavi, RF
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II. Challenges of RF Selectivity Fo
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Figure 39. H3 and N+5 rejections of
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Figure 43. Second order Low-pass Fi
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Figure 46 illustrates the transfer
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H HPF s ( s) = s 1 + ω This corres
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Topologies comparison for a same Q-
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Figure 56. Low-pass to Notch Transf
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II.2 Passive LC Second Order Bandpa
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A possible solution is to split the
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II.2.c Second Order Bandpass Filter
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Figure 69. Band Switching Figure 70
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Another paper [II.7] provides a FOM
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A parallel self resonating circuit
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This gives the following values for
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Vb - 63 - M1 M2 Zin Figure 76. Anot
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when given, reported noise figures
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In all publications dedicated to Gm
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II.4.c Second Order Bandpass Filter
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Figure 87. Biquad Schematic The Gm-
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Vin Rm - 73 - C Vout Figure 89. Der
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Figure 93 depicts the RF performanc
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A second advantage of advanced BiCM
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II.7 Conclusion As a conclusion, th
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[II.13] C. Andriesei, L. Goras, and
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III.I Theoretical Study III. Gm-C F
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g V m3 in III.1.b Linearity Conside
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Assuming an ideal input transconduc
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Figure 102. Linearity of the filter
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Furthermore, a Gm-C circuit is not
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In terms of noise, the Flicker nois
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Table 7 summarizes the specificatio
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Idiff (A) levels reached with this
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III.2.e Unbalanced Differential Pai
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Hence, the combination of the expon
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Technique Current Increase Source D
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Using this structure and considerin
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The dimensioning of the transistors
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III.3.c Gm-cells with MGTR III.3.c.
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Furthermore, the high sensitivity t
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Figure 136. Filter in-band IIP3 ver
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III.4 Comparison of the filters III
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III.5 Conclusion Once the Gm-C seco
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IV. Rauch Filtering IV.1 Sallen-Key
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Thus, an equation linking Q and Gai
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IV.1.c.ii Proposed positive feedbac
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For both Rauch and Sallen-Key filte
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The high sensitivity to passive com
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Furthermore, it should also be take
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IV.2.b Innovative Implementation of
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esulting gain K, constituted of the
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Table 25. Sum-up of the OA specific
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Figure 153. OA voltage gain versus
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Filtering in the mirror, by means o
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However, this feedback makes the fi
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Figure 160. OA Gain and phase versu
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IV.3.c Implemented Filter and Test
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Figure 165 depicts the layout of th
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Figure 169. PVT variations of the f
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IV.4 Rauch Filter Performances: Mea
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Figure 178. IIP3 versus input power
Page 159 and 160: IV.4.c Performances Sum-up The filt
Page 161 and 162: Table 30. Frequency Limitations of
Page 163 and 164: IV.7 References [IV.1] Y. Tsividis
Page 165 and 166: V. A Perspective for Future Develop
Page 167 and 168: V.2 4-path Filter Simulations V.2.a
Page 169 and 170: The frequency tunability is ensured
Page 171 and 172: V.3 State-of-the-Art V.3.a 4-path F
Page 173 and 174: V.4 Conclusion In this chapter, it
Page 175 and 176: IEEE International, 2009, pp. 222-2
Page 177 and 178: RF selectivity challenges In this t
Page 179 and 180: The positive feedback Rauch filter
Page 181 and 182: It is worth highlighting that FOM1
Page 183 and 184: étudiée. Il s’avère que la lin
Page 185 and 186: It is worth noticing that S0 only d
Page 187 and 188: A.3 Signal-to-Noise Ratio These dif
Page 189 and 190: A.5 Friis’ Formula In case of mul
Page 191 and 192: A.7 References [A.1] Friis, H.T., N
Page 193 and 194: To estimate the influence of the di
Page 195 and 196: Now, let’s have a look to the cub
Page 197 and 198: Figure 200. Third order intercept p
Page 199 and 200: B.2 RF Filter Linearity Measurement
Page 201 and 202: B.2.c IIP2 measurement To measure t
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Page 205 and 206: C.1 Gyrator-C filtering year Ref. f
Page 207 and 208: C.2 Gm-C Filtering year Ref. f0 (MH
Page 209: year C.3 Rm-C filtering Ref. f0 (MH
Page 213 and 214: [C.23] J. De Lima and C. Dualibe,
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Page 217 and 218: this gives: I I I md d1 d 2 = I I =
Page 219 and 220: D.2 MOS Degenerated Common-Source C
Page 221 and 222: ⎛ I s ⎞ Vout = Vin + U T ln ⎜
Page 223 and 224: Computing, this leads to: V out + v
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Page 229 and 230: FIGURE 54. H3 AND N+5 REJECTIONS AC
Page 231 and 232: FIGURE 168. PVT VARIATIONS OF THE F
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