III. Gm-C Filtering - Epublications - Université de Limoges

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year Ref. f0 (MHz) BW (MHz) Q gain (dB) Order IIP3 (dBm) NF (dB) techno node (µm) conso (mW) nature supply V realization 2005 [C.30] 1,5 - 50 5 CMOS 0,25 3,3 simu 2008 [C.31] 287 - 860 15 10 8 7 30 CMOS 0,13 8,6 FD simu 2008 [C.31] 48 - 287 11 10 2 7 30 CMOS 0,13 8,6 FD simu 2009 [C.32] 50 - 300 0 3 16,9 14 CMOS 0,18 72 FD 1,8 chip 2010 [C.33] 70 - 280 0 CMOS 0,13 21 FD 1,5 chip 2010 [C.34] 50 - 300 8 - 50 6 2 5 20 CMOS 0,13 7,6 FD 1,2 chip 2011 [C.35] 48 - 780 15 - 60 3-13 8 -5 24 CMOS 0,13 36 FD 1,2 chip - 204 -
year C.3 Rm-C filtering Ref. f0 (MHz) BW (MHz) Q gain (dB) Order IIP3 (dBm) NF (dB) techno node (µm) conso (mW) nature supply V realization 1995 [C.36] 124 - 218,7 ~ 2,5 CMOS 9,44 FD 2,5 2001 [C.37] 41 - 178 20 2 -5 15 CMOS 0,5 14 FD 2 chip - 205 -
Page 1:
UNIVERSITE DE LIMOGES ECOLE DOCTORA
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Acknowledgments En préambule à ce
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Summary ACKNOWLEDGMENTS ...........
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V. A PERSPECTIVE FOR FUTURE DEVELOP
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French Introduction Les signaux TV
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I. Introduction to TV tuners and to
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I.1.b.ii Digital modulations In dig
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makes the covering of a large terri
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I.1.c.iii Terrestrial spectrum Firs
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I.1.e Broadband Reception Systems F
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I.2.b TV Tuner High Performance Spe
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I.2.b.ii High linearity Although co
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I.3 RF Filter Specifications I.3.a
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27. This leads to the downconversio
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These adjacent channel rejection re
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Above 870MHz, there are no more ter
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Newest silicon tuners generations,
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I.6 References [I.1] B. Razavi, RF
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II. Challenges of RF Selectivity Fo
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Figure 39. H3 and N+5 rejections of
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Figure 43. Second order Low-pass Fi
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Figure 46 illustrates the transfer
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H HPF s ( s) = s 1 + ω This corres
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Topologies comparison for a same Q-
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Figure 56. Low-pass to Notch Transf
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II.2 Passive LC Second Order Bandpa
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A possible solution is to split the
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II.2.c Second Order Bandpass Filter
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Figure 69. Band Switching Figure 70
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Another paper [II.7] provides a FOM
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A parallel self resonating circuit
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This gives the following values for
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Vb - 63 - M1 M2 Zin Figure 76. Anot
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when given, reported noise figures
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In all publications dedicated to Gm
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II.4.c Second Order Bandpass Filter
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Figure 87. Biquad Schematic The Gm-
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Vin Rm - 73 - C Vout Figure 89. Der
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Figure 93 depicts the RF performanc
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A second advantage of advanced BiCM
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II.7 Conclusion As a conclusion, th
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[II.13] C. Andriesei, L. Goras, and
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III.I Theoretical Study III. Gm-C F
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g V m3 in III.1.b Linearity Conside
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Assuming an ideal input transconduc
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Figure 102. Linearity of the filter
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Furthermore, a Gm-C circuit is not
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In terms of noise, the Flicker nois
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Table 7 summarizes the specificatio
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Idiff (A) levels reached with this
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III.2.e Unbalanced Differential Pai
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Hence, the combination of the expon
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Technique Current Increase Source D
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Using this structure and considerin
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The dimensioning of the transistors
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III.3.c Gm-cells with MGTR III.3.c.
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Furthermore, the high sensitivity t
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Figure 136. Filter in-band IIP3 ver
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III.4 Comparison of the filters III
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III.5 Conclusion Once the Gm-C seco
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IV. Rauch Filtering IV.1 Sallen-Key
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Thus, an equation linking Q and Gai
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IV.1.c.ii Proposed positive feedbac
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For both Rauch and Sallen-Key filte
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The high sensitivity to passive com
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Furthermore, it should also be take
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IV.2.b Innovative Implementation of
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esulting gain K, constituted of the
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Table 25. Sum-up of the OA specific
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Figure 153. OA voltage gain versus
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Filtering in the mirror, by means o
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However, this feedback makes the fi
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Figure 160. OA Gain and phase versu
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IV.3.c Implemented Filter and Test
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Figure 165 depicts the layout of th
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Figure 169. PVT variations of the f
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IV.4 Rauch Filter Performances: Mea
Page 157 and 158: Figure 178. IIP3 versus input power
Page 159 and 160: IV.4.c Performances Sum-up The filt
Page 161 and 162: Table 30. Frequency Limitations of
Page 163 and 164: IV.7 References [IV.1] Y. Tsividis
Page 165 and 166: V. A Perspective for Future Develop
Page 167 and 168: V.2 4-path Filter Simulations V.2.a
Page 169 and 170: The frequency tunability is ensured
Page 171 and 172: V.3 State-of-the-Art V.3.a 4-path F
Page 173 and 174: V.4 Conclusion In this chapter, it
Page 175 and 176: IEEE International, 2009, pp. 222-2
Page 177 and 178: RF selectivity challenges In this t
Page 179 and 180: The positive feedback Rauch filter
Page 181 and 182: It is worth highlighting that FOM1
Page 183 and 184: étudiée. Il s’avère que la lin
Page 185 and 186: It is worth noticing that S0 only d
Page 187 and 188: A.3 Signal-to-Noise Ratio These dif
Page 189 and 190: A.5 Friis’ Formula In case of mul
Page 191 and 192: A.7 References [A.1] Friis, H.T., N
Page 193 and 194: To estimate the influence of the di
Page 195 and 196: Now, let’s have a look to the cub
Page 197 and 198: Figure 200. Third order intercept p
Page 199 and 200: B.2 RF Filter Linearity Measurement
Page 201 and 202: B.2.c IIP2 measurement To measure t
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Page 205 and 206: C.1 Gyrator-C filtering year Ref. f
Page 207: C.2 Gm-C Filtering year Ref. f0 (MH
Page 211 and 212: C.5 References C.5.a Gyrator-C filt
Page 213 and 214: [C.23] J. De Lima and C. Dualibe,
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Page 217 and 218: this gives: I I I md d1 d 2 = I I =
Page 219 and 220: D.2 MOS Degenerated Common-Source C
Page 221 and 222: ⎛ I s ⎞ Vout = Vin + U T ln ⎜
Page 223 and 224: Computing, this leads to: V out + v
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Page 227 and 228: - 223 -
Page 229 and 230: FIGURE 54. H3 AND N+5 REJECTIONS AC
Page 231 and 232: FIGURE 168. PVT VARIATIONS OF THE F
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