III. Gm-C Filtering - Epublications - Université de Limoges

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IV.3 Choice of the Technology and Design of the Rauch Filter IV.3.a Operational Amplifier Design in 65nm CMOS IV.3.a.i Possible OA Designs and Performances To design the specified operational amplifier using a 65nm CMOS technology, a two stage topology has been chosen. It consists in a differential pair (T1-T2) with an active load (T3-T4) to create high gain, and an output follower (T5) to provide low output impedance, as illustrated in Figure 152. T3 Vin+ Vin- Vout T1 Vmirror VDD bias bias T0 T4 T2 Figure 152. Schematic of the OA in CMOS The use of 5mA in the differential pair with 250µm/0.28µm T1 and T2 gives gm=22.5mS. This poor transconductance leads to a limited OA voltage gain of 15dB as depicted in Figure 153. Cascode topologies allow increasing the voltage gain but not reaching the specifications, as illustrated in Figure 153. . - 136 - Cc T5 T6 If
Figure 153. OA voltage gain versus frequency in CMOS IV.3.a.ii Impact on Filter Performances Table 26 summarizes the performances of the Rauch filter designed in 65nm CMOS, using the initial topology of the OA design. Table 26. 65nm CMOS Rauch Filter Performances Rauch Filter Units f0 Tuning Range 45 – 240 MHz Q-factor 3 - Filter Gain at f0 10 dB NF 17.5 dB In-band IIP3 3 to 2 dBm Supply 2.5 V Consumption 117 mW Technology 65nm CMOS - This table underlines that the performances of such a filter are strongly limited by the poor OA gain. - 137 -
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UNIVERSITE DE LIMOGES ECOLE DOCTORA
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Acknowledgments En préambule à ce
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Summary ACKNOWLEDGMENTS ...........
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V. A PERSPECTIVE FOR FUTURE DEVELOP
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French Introduction Les signaux TV
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I. Introduction to TV tuners and to
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I.1.b.ii Digital modulations In dig
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makes the covering of a large terri
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I.1.c.iii Terrestrial spectrum Firs
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I.1.e Broadband Reception Systems F
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I.2.b TV Tuner High Performance Spe
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I.2.b.ii High linearity Although co
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I.3 RF Filter Specifications I.3.a
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27. This leads to the downconversio
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These adjacent channel rejection re
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Above 870MHz, there are no more ter
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Newest silicon tuners generations,
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I.6 References [I.1] B. Razavi, RF
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II. Challenges of RF Selectivity Fo
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Figure 39. H3 and N+5 rejections of
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Figure 43. Second order Low-pass Fi
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Figure 46 illustrates the transfer
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H HPF s ( s) = s 1 + ω This corres
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Topologies comparison for a same Q-
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Figure 56. Low-pass to Notch Transf
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II.2 Passive LC Second Order Bandpa
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A possible solution is to split the
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II.2.c Second Order Bandpass Filter
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Figure 69. Band Switching Figure 70
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Another paper [II.7] provides a FOM
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A parallel self resonating circuit
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This gives the following values for
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Vb - 63 - M1 M2 Zin Figure 76. Anot
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when given, reported noise figures
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In all publications dedicated to Gm
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II.4.c Second Order Bandpass Filter
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Figure 87. Biquad Schematic The Gm-
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Vin Rm - 73 - C Vout Figure 89. Der
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Figure 93 depicts the RF performanc
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A second advantage of advanced BiCM
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II.7 Conclusion As a conclusion, th
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[II.13] C. Andriesei, L. Goras, and
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III.I Theoretical Study III. Gm-C F
Page 89 and 90: g V m3 in III.1.b Linearity Conside
Page 91 and 92: Assuming an ideal input transconduc
Page 93 and 94: Figure 102. Linearity of the filter
Page 95 and 96: Furthermore, a Gm-C circuit is not
Page 97 and 98: In terms of noise, the Flicker nois
Page 99 and 100: Table 7 summarizes the specificatio
Page 101 and 102: Idiff (A) levels reached with this
Page 103 and 104: III.2.e Unbalanced Differential Pai
Page 105 and 106: Hence, the combination of the expon
Page 107 and 108: Technique Current Increase Source D
Page 109 and 110: Using this structure and considerin
Page 111 and 112: The dimensioning of the transistors
Page 113 and 114: III.3.c Gm-cells with MGTR III.3.c.
Page 115 and 116: Furthermore, the high sensitivity t
Page 117 and 118: Figure 136. Filter in-band IIP3 ver
Page 119 and 120: III.4 Comparison of the filters III
Page 121 and 122: III.5 Conclusion Once the Gm-C seco
Page 123 and 124: IV. Rauch Filtering IV.1 Sallen-Key
Page 125 and 126: Thus, an equation linking Q and Gai
Page 127 and 128: IV.1.c.ii Proposed positive feedbac
Page 129 and 130: For both Rauch and Sallen-Key filte
Page 131 and 132: The high sensitivity to passive com
Page 133 and 134: Furthermore, it should also be take
Page 135 and 136: IV.2.b Innovative Implementation of
Page 137 and 138: esulting gain K, constituted of the
Page 139: Table 25. Sum-up of the OA specific
Page 143 and 144: Filtering in the mirror, by means o
Page 145 and 146: However, this feedback makes the fi
Page 147 and 148: Figure 160. OA Gain and phase versu
Page 149 and 150: IV.3.c Implemented Filter and Test
Page 151 and 152: Figure 165 depicts the layout of th
Page 153 and 154: Figure 169. PVT variations of the f
Page 155 and 156: IV.4 Rauch Filter Performances: Mea
Page 157 and 158: Figure 178. IIP3 versus input power
Page 159 and 160: IV.4.c Performances Sum-up The filt
Page 161 and 162: Table 30. Frequency Limitations of
Page 163 and 164: IV.7 References [IV.1] Y. Tsividis
Page 165 and 166: V. A Perspective for Future Develop
Page 167 and 168: V.2 4-path Filter Simulations V.2.a
Page 169 and 170: The frequency tunability is ensured
Page 171 and 172: V.3 State-of-the-Art V.3.a 4-path F
Page 173 and 174: V.4 Conclusion In this chapter, it
Page 175 and 176: IEEE International, 2009, pp. 222-2
Page 177 and 178: RF selectivity challenges In this t
Page 179 and 180: The positive feedback Rauch filter
Page 181 and 182: It is worth highlighting that FOM1
Page 183 and 184: étudiée. Il s’avère que la lin
Page 185 and 186: It is worth noticing that S0 only d
Page 187 and 188: A.3 Signal-to-Noise Ratio These dif
Page 189 and 190: A.5 Friis’ Formula In case of mul
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A.7 References [A.1] Friis, H.T., N
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To estimate the influence of the di
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Now, let’s have a look to the cub
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Figure 200. Third order intercept p
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B.2 RF Filter Linearity Measurement
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B.2.c IIP2 measurement To measure t
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C.1 Gyrator-C filtering year Ref. f
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C.2 Gm-C Filtering year Ref. f0 (MH
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year C.3 Rm-C filtering Ref. f0 (MH
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C.5 References C.5.a Gyrator-C filt
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[C.23] J. De Lima and C. Dualibe,
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this gives: I I I md d1 d 2 = I I =
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D.2 MOS Degenerated Common-Source C
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⎛ I s ⎞ Vout = Vin + U T ln ⎜
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Computing, this leads to: V out + v
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FIGURE 54. H3 AND N+5 REJECTIONS AC
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FIGURE 168. PVT VARIATIONS OF THE F
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