III. Gm-C Filtering - Epublications - Université de Limoges

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Figure 130 confirms the transconductance of the Gm-cell which is 10mS at the working frequency. Its voltage gain is typical of a lossy integrator. DC voltage gain is 22.5dB. Gain then decreases with frequency due to the capacitive load. Figure 130. Gm-cell DC gain and transconductance Figure 131 shows the loaded Gm-cell variations as a function of the voltage bias of the pseudo-differential pair. Switching-off the PDA, which corresponds to a PDA bias of 0V, the Gm-cell IIP3 is 9dBm. Disconnecting the PDA leads to a comparable value (9.4dBm). However, on a peak of linearity close to 350mV, the specified 20dBm are reached. This technique is then able to enhance the Gm-cell linearity by up to 12dB. Figure 131. Gm-cell linearity versus PDA bias - 110 -
Furthermore, the high sensitivity to process and mismatch issues of the MGTR technique is illustrated in Figure 132. This figure depicts the Monte-Carlo simulation results of the Gm-cell IIP3. It appears that the mean value is 19.8dBm, which is the targeted value. However, the standard deviation describes a high dispersion for 100 runs, since σ=1.5dBm. The dispersion and the sensitivity to PDA bias of each Gm-cell will result in a very sensitive filter. Robustness already appears as a limiting issue. Figure 132. Monte-Carlo Simulations of the Gm-cell IIP3 for 100 runs III.3.c.ii Filter Performances The tuning range of Filter1 covers the full 45 to 450MHz band. A constant Q-factor of 4 is depicted in Figure 133 and guarantees a minimal harmonic rejection. Figure 134 represents the evolution of the central frequency versus the capacitance provided by the capacitor banks. Figure 133. Filter Gain and Q-factor for various central frequencies - 111 -
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UNIVERSITE DE LIMOGES ECOLE DOCTORA
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Acknowledgments En préambule à ce
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Summary ACKNOWLEDGMENTS ...........
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V. A PERSPECTIVE FOR FUTURE DEVELOP
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French Introduction Les signaux TV
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I. Introduction to TV tuners and to
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I.1.b.ii Digital modulations In dig
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makes the covering of a large terri
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I.1.c.iii Terrestrial spectrum Firs
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I.1.e Broadband Reception Systems F
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I.2.b TV Tuner High Performance Spe
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I.2.b.ii High linearity Although co
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I.3 RF Filter Specifications I.3.a
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27. This leads to the downconversio
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These adjacent channel rejection re
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Above 870MHz, there are no more ter
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Newest silicon tuners generations,
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I.6 References [I.1] B. Razavi, RF
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II. Challenges of RF Selectivity Fo
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Figure 39. H3 and N+5 rejections of
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Figure 43. Second order Low-pass Fi
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Figure 46 illustrates the transfer
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H HPF s ( s) = s 1 + ω This corres
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Topologies comparison for a same Q-
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Figure 56. Low-pass to Notch Transf
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II.2 Passive LC Second Order Bandpa
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A possible solution is to split the
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II.2.c Second Order Bandpass Filter
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Figure 69. Band Switching Figure 70
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Another paper [II.7] provides a FOM
Page 63 and 64: A parallel self resonating circuit
Page 65 and 66: This gives the following values for
Page 67 and 68: Vb - 63 - M1 M2 Zin Figure 76. Anot
Page 69 and 70: when given, reported noise figures
Page 71 and 72: In all publications dedicated to Gm
Page 73 and 74: II.4.c Second Order Bandpass Filter
Page 75 and 76: Figure 87. Biquad Schematic The Gm-
Page 77 and 78: Vin Rm - 73 - C Vout Figure 89. Der
Page 79 and 80: Figure 93 depicts the RF performanc
Page 81 and 82: A second advantage of advanced BiCM
Page 83 and 84: II.7 Conclusion As a conclusion, th
Page 85 and 86: [II.13] C. Andriesei, L. Goras, and
Page 87 and 88: III.I Theoretical Study III. Gm-C F
Page 89 and 90: g V m3 in III.1.b Linearity Conside
Page 91 and 92: Assuming an ideal input transconduc
Page 93 and 94: Figure 102. Linearity of the filter
Page 95 and 96: Furthermore, a Gm-C circuit is not
Page 97 and 98: In terms of noise, the Flicker nois
Page 99 and 100: Table 7 summarizes the specificatio
Page 101 and 102: Idiff (A) levels reached with this
Page 103 and 104: III.2.e Unbalanced Differential Pai
Page 105 and 106: Hence, the combination of the expon
Page 107 and 108: Technique Current Increase Source D
Page 109 and 110: Using this structure and considerin
Page 111 and 112: The dimensioning of the transistors
Page 113: III.3.c Gm-cells with MGTR III.3.c.
Page 117 and 118: Figure 136. Filter in-band IIP3 ver
Page 119 and 120: III.4 Comparison of the filters III
Page 121 and 122: III.5 Conclusion Once the Gm-C seco
Page 123 and 124: IV. Rauch Filtering IV.1 Sallen-Key
Page 125 and 126: Thus, an equation linking Q and Gai
Page 127 and 128: IV.1.c.ii Proposed positive feedbac
Page 129 and 130: For both Rauch and Sallen-Key filte
Page 131 and 132: The high sensitivity to passive com
Page 133 and 134: Furthermore, it should also be take
Page 135 and 136: IV.2.b Innovative Implementation of
Page 137 and 138: esulting gain K, constituted of the
Page 139 and 140: Table 25. Sum-up of the OA specific
Page 141 and 142: Figure 153. OA voltage gain versus
Page 143 and 144: Filtering in the mirror, by means o
Page 145 and 146: However, this feedback makes the fi
Page 147 and 148: Figure 160. OA Gain and phase versu
Page 149 and 150: IV.3.c Implemented Filter and Test
Page 151 and 152: Figure 165 depicts the layout of th
Page 153 and 154: Figure 169. PVT variations of the f
Page 155 and 156: IV.4 Rauch Filter Performances: Mea
Page 157 and 158: Figure 178. IIP3 versus input power
Page 159 and 160: IV.4.c Performances Sum-up The filt
Page 161 and 162: Table 30. Frequency Limitations of
Page 163 and 164: IV.7 References [IV.1] Y. Tsividis
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V. A Perspective for Future Develop
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V.2 4-path Filter Simulations V.2.a
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The frequency tunability is ensured
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V.3 State-of-the-Art V.3.a 4-path F
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V.4 Conclusion In this chapter, it
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IEEE International, 2009, pp. 222-2
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RF selectivity challenges In this t
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The positive feedback Rauch filter
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It is worth highlighting that FOM1
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étudiée. Il s’avère que la lin
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It is worth noticing that S0 only d
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A.3 Signal-to-Noise Ratio These dif
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A.5 Friis’ Formula In case of mul
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A.7 References [A.1] Friis, H.T., N
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To estimate the influence of the di
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Now, let’s have a look to the cub
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Figure 200. Third order intercept p
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B.2 RF Filter Linearity Measurement
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B.2.c IIP2 measurement To measure t
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- 199 -
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C.1 Gyrator-C filtering year Ref. f
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C.2 Gm-C Filtering year Ref. f0 (MH
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year C.3 Rm-C filtering Ref. f0 (MH
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C.5 References C.5.a Gyrator-C filt
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[C.23] J. De Lima and C. Dualibe,
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- 211 -
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this gives: I I I md d1 d 2 = I I =
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D.2 MOS Degenerated Common-Source C
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⎛ I s ⎞ Vout = Vin + U T ln ⎜
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Computing, this leads to: V out + v
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- 223 -
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FIGURE 54. H3 AND N+5 REJECTIONS AC
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FIGURE 168. PVT VARIATIONS OF THE F
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