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III. Gm-C Filtering - Epublications - Université de Limoges

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<strong>III</strong>.2.f FDA//PDA technique<br />

Reference [<strong>III</strong>.10] introduces the Multiple Gated Transistors (MGTR) technique. It<br />

makes use of a fully-differential amplifier (FDA) in parallel of a pseudo-differential amplifier<br />

(PDA), as shown in Figure 117.<br />

Figure 117. FDA // PDA <strong>Gm</strong>-cell <strong>de</strong>sign<br />

The output differential current Imd from a MOS FDA is a function of the bias current I0<br />

and of the differential input voltage Emd, as <strong>de</strong>monstrated in APPENDIX D:<br />

W<br />

where β = μCox<br />

.<br />

L<br />

1 4I<br />

2<br />

β Emd<br />

(D.35)<br />

2 β<br />

0<br />

I md = Emd<br />

−<br />

Developing this expression with a Taylor series up to the third or<strong>de</strong>r leads to:<br />

I ≈ αE −γE<br />

(D.36)<br />

md<br />

md<br />

with α and γ being constant terms. Thus, the current from the FDA has a negative third or<strong>de</strong>r<br />

term.<br />

Due to the bias in the sub-threshold region, the differential output current Imd of a<br />

MOS PDA is given by:<br />

λ and ν being two constant terms.<br />

Developing up to the third or<strong>de</strong>r gives:<br />

3<br />

md<br />

ν λ md E<br />

I md = e<br />

(D.37)<br />

I md<br />

3<br />

≈ aEmd<br />

+ bEmd<br />

(D.38)<br />

In<strong>de</strong>ed, since the study is carried out in differential mo<strong>de</strong>, second or<strong>de</strong>r terms are neglected.<br />

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