Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
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In this chapter, we report on the realization of a light emitting p-i-n diode from a highly<br />
aligned film of semiconducting carbon nanotubes that emits light in the near-infrared spectral<br />
range. A split gate design similar to the single-tube CNT diode allows for tuning both the<br />
rectifying electrical behavior of the diode and its light generation efficiency. The CNT film<br />
diode produces light that is polarized along the device channel, a direct consequence of the high<br />
degree of CNT alignment in the film that reflects the polarization property of the 1D nature of<br />
individual tubes.<br />
2. Physical characteristics of CNT films and top-gated devices<br />
We deposited CNT thin films on a Si(p++)/SiO2(100nm) substrate from a suspension of<br />
99% semiconducing (arc discharge) carbon nanotubes <strong>with</strong> diameters ranging from 1.3 to 1.7<br />
nm, separated by density-gradient ultracentrifugation 98 . With this desposition technique, CNTs<br />
align in parallel at the contact line between the solution and a vertically immersed planar<br />
substrate. The slip-stick motion of the contact line during evaporation produces periodic arrays<br />
of regular CNT thin film stripes that cover a large area of the substrate, each stripe having a<br />
width of about 10 μm and a height of 1 to 8 nm, depending on the degree of CNT bundling (see<br />
Figure V-1 (c)). The CNT stripe formation relies solely on self organization <strong>with</strong>out the need for<br />
etching or lithography to obtain the patterns. These CNT films have been extensively<br />
characterized by optical and electrical techniques as well as by SEM and AFM (see Ref. 99 and<br />
Figure V-1). Further details on the assembly technique and its mechanism are available in Ref.<br />
99.<br />
We first contacted sections of a stripe by source and drain electrodes (Ti = 1 nm/Pd = 40<br />
nm/Au = 20 nm, Figure V-1 (a) ), and then deposited 30 to 50 nm of Al2O3 by means of atomic<br />
layer deposition. Ti top gates (thickness: 15 to 35 nm) were then defined by e-beam lithography<br />
and deposited by e-beam evaporation (Figure V-1 (b) and V-2 (a)).<br />
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