Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes Optoelectronics with Carbon Nanotubes
experiments 6 , and thermal heating, which strongly influences the EL of metallic as well as semiconducting SWNTs 87 , does not play a role. (a) (b) EL Intensity (arb. units) 60 40 20 0 0 50 100 150 200 Drain-Source (Current (nA)) Figure IV-2. Identification of the light emission mechanism. (a) The upper plane is an SEM image of a CNT diode. The lower plane is a surface plot of the infrared emission. A microscopy image of the device (not shown) was taken under external illumination in order to verify that the emission is localized at the position of the CNT. Infrared emission is observed at the position of the tube when the device is operated as a LED (VGS1 = -8 V, VGS2 = +8 V; left image). In contrast, no emission is observed when a unipolar current of equal magnitude is driven through the nanotube (VGS1 = -8 V, VGS2 = -8 V; right image). (b) Integrated EL intensity as a function of current. The linear fit indicates that the mechanism is threshold-less and that the emission is proportional to the carrier injection rate. (c) EL spectrum of a SWNT diode at IDS = 200 nA. The red line is a Lorentz fit. After Ref. 11. 71 (c)
After calibrating our detection system against the infrared emission from a known black- body emitter and taking into account its collection efficiency, we estimate an EL efficiency of ~0.5–1 10 -4 photons per injected electron-hole pair. Given a radiative carrier lifetime of 10– 100 ns in CNTs 33, 34, 78 , we obtain a non-radiative lifetime τL in the order of a few picoseconds. This value is smaller than what is typically observed in PL measurements 130 (~20–200 ps). However, our value for τL appears reasonable because of the interaction with the environment and a higher concentration of carriers, both of which cause an increase of the non-radiative decay rate 141 . In normal PL measurements, the tube is suspended while our tube is directly on a SiO2 substrate and is covered by a layer of ALD-deposited Al2O3, for the estimated dielectric constant of εeff = 5.7. Fig. IV-2 (c) shows the spectrally dispersed emission of a SWNT diode at IDS = 200 nA. It is composed of a single, narrow peak centered at ~0.635 eV, with a spectral width of ~50 meV. Note that this is much narrower than the widths discussed in Chapter III. Based on a correlation between the EL results with PL and Raman data 109, 142 , we assign the EL peak to emission from the lowest-energy bright exciton state E11 in the CNT. The E11 designation is also consistent with the known diameter distribution of the sample (see also the discussion of E11 peak assignment in Chapter III). Now we touch on the double-peak feature in emission spectra that was observed in many CNTFETs (Chapter III) and also evident in some of CNT diodes. We now have much narrower linewidth which allows us to analyze these two peaks quantitatively. In Figure IV-3 (a) we present the results obtained from another device. Besides the dominant emission at ~0.755 eV (labeled X), a weaker luminescence band is observed at ~65 meV lower energy (LX). We can rule out the possibility that X and LX are originating from two separate tubes in a multi-walled CNT. The small energy spacing translates into a diameter difference which is much less than twice the graphite lattice-plane distance. In order to further confirm that both emission peaks do not stem from a small bundle of CNTs, we characterized the tube by resonance Raman spectroscopy and atomic force microscopy (AFM). In the Raman measurements, we tune the excitation laser energy between 2.0 and 2.5 eV, i.e. across the E33-range that corresponds to the diameter-range of our CNT sample. Only one single radial-breathing-mode (RBM), centered at ωRBM ~ 200 cm -1 , was observed, from which the CNT diameter is determined to be 37 dt = 72
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After calibrating our detection system against the infrared emission from a known black-<br />
body emitter and taking into account its collection efficiency, we estimate an EL efficiency of<br />
~0.5–1 10 -4 photons per injected electron-hole pair. Given a radiative carrier lifetime of 10–<br />
100 ns in CNTs 33, 34, 78 , we obtain a non-radiative lifetime τL in the order of a few picoseconds.<br />
This value is smaller than what is typically observed in PL measurements 130 (~20–200 ps).<br />
However, our value for τL appears reasonable because of the interaction <strong>with</strong> the environment<br />
and a higher concentration of carriers, both of which cause an increase of the non-radiative decay<br />
rate 141 . In normal PL measurements, the tube is suspended while our tube is directly on a SiO2<br />
substrate and is covered by a layer of ALD-deposited Al2O3, for the estimated dielectric constant<br />
of εeff = 5.7.<br />
Fig. IV-2 (c) shows the spectrally dispersed emission of a SWNT diode at IDS = 200 nA.<br />
It is composed of a single, narrow peak centered at ~0.635 eV, <strong>with</strong> a spectral width of ~50 meV.<br />
Note that this is much narrower than the widths discussed in Chapter III. Based on a correlation<br />
between the EL results <strong>with</strong> PL and Raman data 109, 142 , we assign the EL peak to emission from<br />
the lowest-energy bright exciton state E11 in the CNT. The E11 designation is also consistent<br />
<strong>with</strong> the known diameter distribution of the sample (see also the discussion of E11 peak<br />
assignment in Chapter III).<br />
Now we touch on the double-peak feature in emission spectra that was observed in many<br />
CNTFETs (Chapter III) and also evident in some of CNT diodes. We now have much narrower<br />
linewidth which allows us to analyze these two peaks quantitatively. In Figure IV-3 (a) we<br />
present the results obtained from another device. Besides the dominant emission at ~0.755 eV<br />
(labeled X), a weaker luminescence band is observed at ~65 meV lower energy (LX). We can<br />
rule out the possibility that X and LX are originating from two separate tubes in a multi-walled<br />
CNT. The small energy spacing translates into a diameter difference which is much less than<br />
twice the graphite lattice-plane distance. In order to further confirm that both emission peaks do<br />
not stem from a small bundle of CNTs, we characterized the tube by resonance Raman<br />
spectroscopy and atomic force microscopy (AFM). In the Raman measurements, we tune the<br />
excitation laser energy between 2.0 and 2.5 eV, i.e. across the E33-range that corresponds to the<br />
diameter-range of our CNT sample. Only one single radial-breathing-mode (RBM), centered at<br />
ωRBM ~ 200 cm -1 , was observed, from which the CNT diameter is determined to be 37 dt =<br />
72