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Optoelectronics with Carbon Nanotubes

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Figure III-11. Comparison between the experimental width (black squares) of the EL<br />

spectra in Figure III-4 and the broadening calculated from Equation III.3. Similar slopes<br />

indicate that the field ionization effect can account for the change in width.<br />

Having accounted for the double peak, acoustic phonons and broadening due to field<br />

ionization, there is still about 60 ± 10 meV of broadening that needs to be explained. This value<br />

does not vary as a function of power; power-dependent broadening was already accounted for by<br />

the field effect. One possible effect is electron heating. If we follow the linear power-<br />

dependence demonstrated by Steiner et al., we arrive at extremely high electron temperatures, in<br />

thousands of Kelvin at high power. However, as it has been discussed already, it is likely that<br />

the phonon population saturates as the field increases over the impact excitation threshold.<br />

Scattering <strong>with</strong> surface polar optical phonons of the substrate has also been shown to be<br />

important as an energy dissipating mechanism 112, 126 . As a more realistic estimate, we can use<br />

the temperature of 1200 K in a suspended metallic nanotube as the upper limit of the optical<br />

phonon temperature, since this was observed in the NDC regime in Ref. 87. Steiner et al. also<br />

found zone boundary K phonons up to 1500 K, and G phonons close to 1000 K on the substrate<br />

112 . We do not observe NDC in our data (see the linear I-V in Figure III-6), so we assume that<br />

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