Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
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Figure III-9. The temperatures of three different phonon modes as a function of<br />
power measured by Steiner et al. K and G are zone-boundary phonons and optical<br />
phonons, respectively. Notice the saturation-like behavior for acoustic phonons (red<br />
squares) above 25 W m -1 . After Ref. 112.<br />
Another clue that suggests temperature saturation in the higher bias regime comes from<br />
EL spectra of the high-energy E11 peaks (~0.8 eV, see Figure III-10) from two of our CNTFET<br />
devices. Judging from the energy of the main peak, the CNTs used for these have smaller<br />
diameters than that of Figure III-4. When the main peak is fit as Lorentzian and the background<br />
as blackbody, we can extract the temperature corresponding to the blackbody temperature that<br />
results from the heating of the nanotubes, which, we assume, represents the “average lattice<br />
temperature”. Blackbody radiation from CNT heating has been reported by several groups (see,<br />
for example, Refs. 86, 121, 122 ). Although there is no well-defined lattice temperature in our case<br />
because the phonons are not in thermal equilibrium, the kinetic energies of the carbon atoms<br />
manifested as the populations of different phonon modes must have an average value. The<br />
heating of the lattice results in the blackbody emission in the infrared. Although the dimensions<br />
of CNTs are outside the thermodynamic limit for the traditional bulk blackbody, it was recently<br />
shown that Planck’s Law explains well the blackbody emission intensity of multi-wall nanotubes<br />
121 . Therefore, we assume that this broad background is blackbody emission resulting from the<br />
“average temperature” nanotube lattice and investigate the temperature of acoustic phonons at<br />
power greater than 40 W m -1 .<br />
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