Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
Optoelectronics with Carbon Nanotubes
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(a) (b)<br />
metallic<br />
Figure I-4. One-dimensional energy dispersion of (a) metallic and (b)<br />
semiconducting SWNTs according to the single-particle interband theory.<br />
Corresponding density of states <strong>with</strong> van Hove singularities are indicated in green.<br />
In an undoped SWNT at zero temperature, the bands are filled up to the Fermi level<br />
because there is only one extra electron per atom. The energy gap in semiconducting SWNTs<br />
are in the order of 1 eV, meaning that we can expect to see transition effects from electrically or<br />
optically excited carriers across the gap at room temperature. However, the unique<br />
dimensionality of carbon nanotubes has a further consequence that needs to be considered first,<br />
namely, many-body effects.<br />
2. Electron-electron and electron-hole interactions in SWNTs<br />
There are two main effects that significantly modify the single-particle bandgap, Eg,<br />
described in the previous section. One is the electron-electron repulsion, which contributes to<br />
the self energy Eee of the system. The other is the creation of localized electron-hole pairs bound<br />
by the Coulomb attraction, forming hydrogen-like particles called excitons, each <strong>with</strong> a series of<br />
Rydberg states. The energies of these two effects are both significant fractions of the single-<br />
particle bandgap in one-dimension and considerably affect the electrical and optical excitations<br />
of carriers and emission of photons. Initially the single-particle model served adequately enough<br />
8<br />
semiconducting